Nexperia USA Inc. PSMN8R5-100PSQ

Overview

PSMN8R5-100PS from Nexperia is a standard-level N-channel MOSFET in TO-220AB (SOT78) package, rated for 100 V drain-source voltage, 8.5 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and qualified to 175 °C junction temperature. It serves as a high-current power switch in primary-side switching and synchronous rectification circuits, delivering 100 A continuous drain current at T_mb = 25 °C.

For engineers reviewing the PSMN8R5-100PS datasheet, PSMN8R5-100PS pinout, PSMN8R5-100PS application, or PSMN8R5-100PS equivalent, this device is selected for high-efficiency industrial AC/DC converters, server power supplies, and motor control stages where low conduction loss and robust avalanche capability (219 mJ) are critical.

Technical Context

This MOSFET employs planar silicon technology with optimized channel geometry to achieve low R_DS(on) while maintaining stable threshold voltage (2.4–4.0 V) across -55 °C to 175 °C. Its gate charge profile-Q_G(tot) = 111 nC, Q_GD = 33 nC-supports efficient hard-switching operation at moderate frequencies.

The device features an integrated source-drain diode with V_SD = 0.82 V at 25 A and T_j = 25 °C, and exhibits defined safe operating area (SOA) up to 100 V/100 A DC, with pulsed peak current capability of 429 A (t_p ≤ 10 µs). Thermal resistance R_th(j-mb) is 0.49–0.57 K/W, enabling high-power dissipation when mounted on heatsinks.

Key Specifications

Pinout & Package

TO-220AB (SOT78) plastic single-ended package with heatsink-mounted mounting base electrically connected to the drain terminal. Dimensions conform to IEC/JEDEC SC-46 outline; 3-lead configuration with 2.54 mm lead pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Compared with STP110N10F7, PSMN8R5-100PS offers lower Q_G for reduced gate drive loss and superior thermal performance via direct-mount drain; versus IRF840PBF, it delivers order-of-magnitude lower conduction loss and true 100 V system compatibility.

Availability

PSMN8R5-100PS is available at Aetrix Electronics and suitable for AC/DC power supply equipment, motor control inverters, and server power supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for PSMN8R5-100PS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade power MOSFETs.

This part belongs to Nexperia's standard-level TrenchMOS™ power MOSFET product line, engineered for high-efficiency switching in industrial power conversion, motor control, and computing infrastructure where thermal robustness and avalanche ruggedness are essential.

FAQ

Is PSMN8R5-100PS suitable for gate drive with 5 V microcontroller outputs?

No. PSMN8R5-100PS is a standard-level MOSFET requiring ≥10 V V_GS for full enhancement. At 5 V, R_DS(on) exceeds 40 mΩ-causing excessive conduction loss and thermal runaway. A gate driver (e.g., TC4427) or level shifter is mandatory for MCU interfacing.

What is the maximum allowable mounting base temperature for continuous 100 A operation?

Per Figure 1 in the datasheet, 100 A continuous drain current is only permissible at T_mb = 25 °C. At T_mb = 100 °C, the rated current drops to 75 A. Exceeding these limits risks thermal runaway due to positive R_DS(on) temperature coefficient above 100 °C.

Does the mounting base require electrical insulation when used in a high-side configuration?

Yes. The mounting base is electrically connected to the drain terminal. In high-side configurations (e.g., boost PFC), the base sits at switching potential up to 100 V. An insulating pad (e.g., mica or ceramic) and shoulder washer must be used to prevent short-circuit to grounded heatsinks.

Can PSMN8R5-100PS replace a 100 V Schottky diode in synchronous rectification?

Yes-when driven with precise timing to avoid shoot-through. Its V_SD = 0.82 V and R_DS(on) = 8.5 mΩ deliver lower forward loss than a 45 V Schottky at >15 A, but requires complementary gate control logic and dead-time management to prevent cross-conduction.