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NXP Semiconductors PSMN8R5-100XSQ
- Part No.:
- PSMN8R5-100XSQ
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack, Isolated Tab
- Datasheet:
-
PSMN8R5-100XSQ.pdf
- Description:
- MOSFET N-CH 100V 49A TO220F
- Quantity:
- Payment:
- Shipping:
Inventory:7,154
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Product details
Overview
PSMN8R5-100XS from Nexperia is an N-channel 100 V, 8.5 mΩ standard-level power MOSFET in TO-220F (SOT186A) package, qualified to 175 °C junction temperature. It delivers 49 A continuous drain current at Tmb = 25 °C with low RDS(on) and high avalanche energy (439 mJ), suited for industrial AC–DC power supplies and synchronous rectification.
For engineers reviewing the PSMN8R5-100XS datasheet, PSMN8R5-100XS pinout, PSMN8R5-100XS application, or PSMN8R5-100XS equivalent, key selection factors include its isolated TO-220F thermal performance (Rth(j-mb) = 2.5 K/W), gate-drive compatibility with standard 10 V logic, and rugged unclamped avalanche capability under 49 A peak stress.
Technical Context
This MOSFET uses TrenchMOS technology to achieve low on-resistance and fast switching with QG(tot) = 100 nC and QGD = 30 nC at VGS = 10 V, enabling efficient operation in hard-switched topologies. Its gate threshold voltage (VGS(th)) ranges from 1 V to 4.5 V across -55 °C to 175 °C, supporting stable turn-on under wide thermal conditions.
The device features an electrically isolated mounting base (Visol(RMS) = 2500 V, Cisol = 10 pF), allowing direct heatsink attachment without additional insulation. Its safe operating area supports 196 A pulsed drain current (tp ≤ 10 µs) and maintains RDS(on) ≤ 22.6 mΩ up to Tj = 175 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V maximum - defines maximum blocking voltage in DC-link or flyback primary-side applications |
| RDS(on) @ Tj = 25 °C | 4.5–8.5 mΩ - enables low conduction loss in high-current power stages (e.g., server VRMs) |
| ID continuous @ Tmb = 25 °C | 49 A - supports high-power industrial SMPS without forced airflow |
| EAS | 439 mJ non-repetitive avalanche energy - provides robustness against inductive switching transients |
| Rth(j-mb) | 2.5 K/W typical - allows efficient heat transfer to heatsink, critical for compact TO-220F thermal design |
| QG(tot) | 100 nC - determines gate driver power requirement and switching speed in 100 kHz–500 kHz converters |
| VGS(th) | 1–4.5 V range - ensures reliable turn-on with standard 5 V or 10 V gate drivers across full temperature range |
| Ciss | 5512 pF @ VDS = 50 V - impacts Miller effect and EMI behavior during high-dv/dt switching |
Pinout & Package
TO-220F (SOT186A) plastic single-ended package with electrically isolated mounting base, 3 leads, and 1 mounting hole. Designed for heatsink-mounted operation without external insulator.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Controls channel conduction; requires 10 V drive for full enhancement; isolated base prevents ground loop issues |
| 2 (D) | Drain | High-voltage side connection; tied to DC bus or transformer primary; handles 100 V blocking and 196 A pulse |
| 3 (S) | Source | Power return path and reference for gate drive; low-inductance layout critical for switching stability |
| Mounting Base (mb) | Isolated Heatsink Interface | Electrically isolated (2500 V RMS) but thermally coupled; enables direct bolt-down to chassis or heatsink |
Key Features
| Feature | Design Value |
|---|---|
| Isolated TO-220F package | Enables direct metal heatsink mounting without insulating pads, reducing thermal resistance by ~0.5 K/W vs. standard TO-220 |
| 175 °C junction rating | Supports operation in high-ambient environments (e.g., enclosed industrial enclosures) without derating penalties |
| Low QGD/QG(tot) ratio | 30/100 = 0.3 - improves hard-switching efficiency and reduces risk of spurious turn-on in high-dv/dt circuits |
| Avalanche-rated | 439 mJ EAS - eliminates need for external snubbers in flyback or LLC resonant converter primary switches |
| Standard-level gate drive | Operates fully enhanced at VGS = 10 V - compatible with common microcontroller GPIOs and dedicated gate drivers (e.g., UCC27531) |
| High ID pulse capability | 196 A peak (tp ≤ 10 µs) - sustains motor startup surges or server load-step transients without failure |
Applications
| AC–DC Power Supplies | Server Power Supplies |
|---|---|
|
Use Scenario: Primary-side switch in 500–1000 W industrial AC–DC front-end converters. IC Role / Device Role / Timing Role: High-voltage switching element in flyback or forward topology, handling 100 V DC bus and 49 A continuous current. Use Value: Low RDS(on) minimizes conduction loss at full load; isolated package simplifies heatsink integration in space-constrained enclosures. |
Use Scenario: Synchronous rectifier in 12 V output stage of server VRM or POL converter. IC Role / Device Role / Timing Role: Low-side power switch replacing Schottky diode to reduce forward voltage drop and improve efficiency above 30 A. Use Value: 8.5 mΩ RDS(on) at 100 °C cuts conduction loss by >60% vs. 0.5 V diode drop, directly improving 12 V rail efficiency. |
| Motor Control | Synchronous Rectification |
|
Use Scenario: Half-bridge high-side switch in 3-phase BLDC motor drives for HVAC compressors. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET requiring bootstrap gate drive; handles 100 V bus and 49 A phase current. Use Value: 100 nC total gate charge enables <500 ns turn-off delay, supporting PWM frequencies up to 40 kHz without excessive driver loss. |
Use Scenario: Secondary-side switch in isolated DC–DC converters (e.g., telecom 48 V to 12 V). IC Role / Device Role / Timing Role: Synchronous rectifier replacing diode in forward or active-clamp forward topology. Use Value: 439 mJ avalanche energy tolerates reverse recovery spikes from transformer leakage inductance, eliminating need for clamping diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP10NK100ZFP | 100 V, 10 A, RDS(on) = 1 Ω - higher on-resistance, lower current rating, Zener-protected gate | Better suited for low-current (<10 A), high-voltage protection-critical designs (e.g., lighting ballasts) | Select when gate robustness against overvoltage outweighs conduction loss requirements |
| IRF840PBF | 500 V, 8 A, RDS(on) = 0.85 Ω - higher voltage rating but significantly higher RDS(on) and lower current capability | Targeted at 400 V+ AC line applications (e.g., universal input SMPS) where 100 V rating is insufficient | Choose only if system requires >100 V blocking; otherwise PSMN8R5-100XS offers superior efficiency at 100 V |
Compared with STP10NK100ZFP and IRF840PBF, PSMN8R5-100XS delivers 6× lower RDS(on) and 6× higher continuous current in the same 100 V class, making it optimal for high-efficiency, high-power-density industrial and server power stages where thermal headroom is constrained.
Availability
PSMN8R5-100XS is available at Aetrix Electronics and suitable for AC–DC power supplies, server power supplies, and motor control systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for PSMN8R5-100XS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.
The PSMN8R5-100XS belongs to Nexperia's TrenchMOS standard-level power MOSFET family, engineered for high-efficiency, high-reliability switching in industrial and communications power conversion.
FAQ
What is the maximum continuous drain current for PSMN8R5-100XS at 100 °C mounting base temperature?
The PSMN8R5-100XS supports 34.6 A continuous drain current at Tmb = 100 °C, as specified in Table 5 (Limiting Values). This derating reflects thermal constraints of the TO-220F package and must be applied in designs without forced cooling or large heatsinks. The full 49 A rating applies only at Tmb = 25 °C.
Does PSMN8R5-100XS require a gate driver with negative turn-off capability?
No, PSMN8R5-100XS is a standard-level MOSFET optimized for 10 V gate drive and does not require negative turn-off voltage. Its VGS(th) max is 4.5 V at 25 °C and 1 V at 175 °C, ensuring clean turn-off with 0 V gate bias. A simple pull-down resistor suffices for most applications, though active gate drivers improve switching speed.
Can PSMN8R5-100XS be used in avalanche mode repeatedly?
No, PSMN8R5-100XS is rated for non-repetitive avalanche energy only (EAS = 439 mJ). Repeated avalanche operation causes cumulative junction damage and is not guaranteed by specification. Designers must ensure SOA compliance and use snubbers or clamp circuits to avoid repeated unclamped inductive switching events.
What is the isolation voltage rating of the mounting base in PSMN8R5-100XS?
The mounting base of PSMN8R5-100XS provides 2500 V RMS isolation (Visol(RMS)), verified per IEC 60134 at 50–60 Hz with clean, dust-free conditions. This allows direct mechanical attachment to grounded heatsinks while maintaining functional isolation between drain and system ground-critical for safety-compliant industrial power supplies.
How does the RDS(on) of PSMN8R5-100XS change with temperature?
PSMN8R5-100XS exhibits positive temperature coefficient: RDS(on) increases from 4.5–8.5 mΩ at 25 °C to 11.18–14.9 mΩ at 100 °C and 16.95–22.6 mΩ at 175 °C (Table 8). This behavior enables current sharing in paralleled configurations and improves thermal stability in constant-current applications.
PSMN8R5-100XSQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack, Isolated Tab
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 49A (Tj)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 8.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 100 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5512 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 55W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220F
PSMN8R5-100XSQ FAQ
1.How can I place an order for PSMN8R5-100XSQ through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN8R5-100XSQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN8R5-100XSQ reliable?
The price and inventory of PSMN8R5-100XSQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN8R5-100XSQ is usually 5 days.
3.What payment methods are accepted for PSMN8R5-100XSQ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN8R5-100XSQ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN8R5-100XSQ?
PSMN8R5-100XSQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN8R5-100XSQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN8R5-100XSQ?
For technical support, including PSMN8R5-100XSQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN8R5-100XSQ requirements.
6.How does Aetrix verify that PSMN8R5-100XSQ is sourced from the original manufacturer or authorized distributors?
All PSMN8R5-100XSQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN8R5-100XSQ meets industry standards.
7.What is the process for return or replacement of PSMN8R5-100XSQ?
All PSMN8R5-100XSQ units undergo pre-shipment inspection (PSI). If there is an issue with PSMN8R5-100XSQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN8R5-100XSQ part is unused and in its original packaging.
Return procedure for PSMN8R5-100XSQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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