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Nexperia USA Inc. PSMN8R5-40HSX
- Part No.:
- PSMN8R5-40HSX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-1205, 8-LFPAK56
- Datasheet:
-
PSMN8R5-40HSX.pdf
- Description:
- MOSFET 2N-CH 40V 30A LFPAK56D
- Quantity:
- Payment:
- Shipping:
Inventory:1,590
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Product details
Overview
PSMN8R5-40HS from Nexperia is a dual N-channel standard-level MOSFET in LFPAK56D (SOT1205) package, using TrenchMOS technology for high-efficiency power switching. It delivers 40 V VDS, 8.5 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C, 30 A continuous drain current, and is qualified to 175 °C junction temperature - deployed in server power supplies and BLDC motor control stages.
For engineers reviewing the PSMN8R5-40HS datasheet, PSMN8R5-40HS pinout, PSMN8R5-40HS application, or PSMN8R5-40HS equivalent, key selection criteria include dual-FET integration in a single LFPAK56D footprint, avalanche ruggedness (84 mJ), low thermal resistance (2.84 K/W j-to-mb), and gate charge profile optimized for synchronous rectification and high-frequency DC-DC conversion.
Technical Context
This dual MOSFET integrates two identical N-channel devices in one thermally enhanced LFPAK56D package with copper-clip die attach and solder die bonding. Each FET shares identical static and dynamic characteristics: 40 V breakdown voltage, 8.5 mΩ typical RDS(on) at 10 V drive, and matched gate charge (QG(tot) = 21.8 nC, QGD = 7.8 nC).
The device supports repetitive avalanche operation and features a robust source-drain diode with 11.7 nC recovered charge and 20.3 ns reverse recovery time. Its thermal design targets mounting-base cooling, delivering 53 W total power dissipation at Tmb = 25 °C and sustaining 30 A continuous current up to Tmb = 100 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V maximum drain-source voltage - defines safe blocking capability in 36 V nominal bus applications. |
| RDS(on) | 8.5 mΩ typ @ VGS = 10 V, Tj = 25 °C - enables <1.3 W conduction loss at 20 A per FET. |
| ID | 30 A continuous drain current - limited by package thermal capacity, not silicon. |
| QG(tot) | 21.8 nC total gate charge - determines driver strength requirement for <20 ns switching transitions. |
| Rth(j-mb) | 2.84 K/W junction-to-mounting-base thermal resistance - enables direct heatsink attachment without PCB copper pour dependency. |
| EAS | 84 mJ non-repetitive avalanche energy - supports robustness against inductive turn-off transients in motor drives. |
| VGS(th) | 2.4–4.5 V gate threshold voltage - ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers. |
Pinout & Package
PSMN8R5-40HS uses the LFPAK56D (SOT1205) surface-mount package: 8-lead dual-power SO8 variant with exposed copper mounting base for low thermal impedance and high power density. Dimensions: 4.95 × 5.30 × 1.02 mm (L × W × H), with 1.27 mm lead pitch and solder land pattern optimized for reflow.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | S1 | Source terminal of FET1 - common return path for first half-bridge leg or synchronous rectifier channel. |
| 2 | G1 | Gate terminal of FET1 - isolated control input requiring <22 nC charge for full enhancement. |
| 3 | S2 | Source terminal of FET2 - electrically independent from S1; enables dual-channel or half-bridge configuration. |
| 4 | G2 | Gate terminal of FET2 - fully decoupled from G1; supports independent or complementary gate drive. |
| 5, 6 | D2 | Drain terminals of FET2 - paralleled pins reduce inductance and current density in high-current paths. |
| 7, 8 | D1 | Drain terminals of FET1 - paralleled pins provide low-inductance connection to high-side or output node. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel integration | Two matched MOSFETs in one LFPAK56D footprint - reduces PCB area by ~40% vs. discrete dual-SO8 layout. |
| Copper-clip die attach | Enables 2.84 K/W Rth(j-mb) - improves thermal transfer over wire-bonded alternatives by >35%. |
| Repetitive avalanche rated | Qualified for repeated inductive energy clamping - eliminates need for external snubbers in BLDC phase-leg designs. |
| 175 °C junction rating | Supports operation in sealed server PSUs and industrial motor controllers without derating at ambient >85 °C. |
| TrenchMOS technology | Delivers 8.5 mΩ RDS(on) at 10 V drive - achieves lower on-resistance than planar MOSFETs of same die size. |
Applications
| Brushless DC Motor Control | High-Efficiency Server PSU |
|---|---|
|
Use Scenario: Three-phase inverter stage driving 48 V BLDC motors in data center fans and liquid cooling pumps. IC Role / Device Role / Timing Role: Dual FET used as high-side/low-side pair per phase leg - enabling compact half-bridge modules with shared thermal path. Use Value: 8.5 mΩ RDS(on) and 21.8 nC QG minimize conduction + switching losses, achieving >98.2% efficiency at 20 kHz PWM. |
Use Scenario: Primary-side synchronous rectification in 48 V input, 12 V/54 A output LLC resonant converter for AI server VRMs. IC Role / Device Role / Timing Role: Dual FET configured as paralleled secondary-side switches - replacing Schottky diodes to reduce forward drop and improve light-load regulation. Use Value: 0.78 V typical VSD and 11.7 nC Qr enable fast, low-loss body-diode conduction during dead-time, cutting rectifier losses by 42% vs. discrete diodes. |
| DC-DC Converter Power Stage | High-Performance Synchronous Rectification |
|
Use Scenario: 12 V to 1 V point-of-load (PoL) buck converter supplying GPU memory subsystems. IC Role / Device Role / Timing Role: Dual FET used as integrated high-side switch and low-side synchronous rectifier - reducing gate drive complexity and layout parasitics. Use Value: Matched RDS(on) and QG across both FETs ensure balanced timing margins and minimal shoot-through risk at 1 MHz switching. |
Use Scenario: Secondary-side synchronous rectification in 48 V to 12 V isolated DC-DC brick for telecom infrastructure. IC Role / Device Role / Timing Role: Dual FET employed as back-to-back configured ideal diodes - providing reverse polarity protection and bidirectional current handling. Use Value: 175 °C qualification and 84 mJ EAS allow operation under sustained overload and fault conditions without thermal runaway. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BSC014N04LS6 | Single-channel 40 V, 1.4 mΩ MOSFET in SuperSO8; no dual integration. | Requires two separate packages for dual functionality - increases PCB area and thermal management complexity. | Choose when higher current per channel (>40 A) is needed and board space is not constrained. |
| Vishay SiZF300DT | Dual 30 V, 3.0 mΩ LFPAK56D MOSFET; lower voltage rating and tighter RDS(on) tolerance. | Not suitable for 40 V bus systems; limited to ≤30 V input rails like 24 V industrial supplies. | Choose only for 24 V applications where sub-3 mΩ on-resistance justifies reduced voltage margin. |
Compared with BSC014N04LS6 and SiZF300DT, PSMN8R5-40HS uniquely balances 40 V rating, dual integration, and 8.5 mΩ RDS(on) in a thermally optimized LFPAK56D - making it the only option supporting 36–48 V bus systems with single-package dual-FET functionality and 175 °C reliability.
Availability
PSMN8R5-40HS is available at Aetrix Electronics and suitable for brushless DC motor control, high-efficiency server power supplies, and high-performance synchronous rectification requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for PSMN8R5-40HS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential semiconductors - delivering high-volume, high-reliability discrete, logic, and MOSFET solutions for automotive, industrial, and computing markets.
The PSMN8R5-40HS belongs to Nexperia's TrenchMOS LFPAK portfolio, engineered specifically for high-power-density, thermally demanding applications such as server PSUs and motor drives where package-level thermal performance is critical.
FAQ
Is PSMN8R5-40HS pin-compatible with other LFPAK56D dual MOSFETs?
Yes - PSMN8R5-40HS uses the standardized SOT1205 footprint with identical 1.27 mm lead pitch and pad layout as all Nexperia LFPAK56D dual MOSFETs. Mechanical compatibility is confirmed per Figure 17 and solder land dimensions in Figure 18 of the datasheet, enabling drop-in replacement within the same package family.
What is the maximum allowable peak drain current for PSMN8R5-40HS?
The pulsed peak drain current is 225 A (IDM), specified for tp ≤ 10 µs at Tmb = 25 °C per Table 5. This value is derived from Safe Operating Area (SOA) limits and assumes proper gate drive and thermal management - exceeding this requires verification against SOA curves in Figure 3 of the datasheet.
Does PSMN8R5-40HS support gate drive from 5 V microcontrollers?
No - its VGS(th) range is 2.4–4.5 V, but full enhancement requires ≥10 V to achieve rated 8.5 mΩ RDS(on). At 5 V, RDS(on) rises above 25 mΩ (per Fig. 6), increasing conduction loss significantly. A dedicated 10 V gate driver or level-shifter is required for optimal performance.
How is thermal performance validated for PSMN8R5-40HS in real-world mounting?
Thermal resistance Rth(j-mb) = 2.84 K/W is measured with the mounting base directly attached to a cold plate per JEDEC JESD51-14. Real-world PCB thermal performance depends on copper area, via count, and heatsink interface - Figure 5 provides transient impedance curves, and Figure 1 confirms power derating versus Tmb.
PSMN8R5-40HSX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-1205, 8-LFPAK56
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 40V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Ta)
- Rds On (Max) @ Id, Vgs:
- 8.5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 21.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1439pF @ 25V
- Power - Max:
- 53W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56D
PSMN8R5-40HSX FAQ
1.How can I place an order for PSMN8R5-40HSX through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN8R5-40HSX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN8R5-40HSX reliable?
The price and inventory of PSMN8R5-40HSX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN8R5-40HSX is usually 5 days.
3.What payment methods are accepted for PSMN8R5-40HSX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN8R5-40HSX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN8R5-40HSX?
PSMN8R5-40HSX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN8R5-40HSX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN8R5-40HSX?
For technical support, including PSMN8R5-40HSX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN8R5-40HSX requirements.
6.How does Aetrix verify that PSMN8R5-40HSX is sourced from the original manufacturer or authorized distributors?
All PSMN8R5-40HSX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN8R5-40HSX meets industry standards.
7.What is the process for return or replacement of PSMN8R5-40HSX?
All PSMN8R5-40HSX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN8R5-40HSX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN8R5-40HSX part is unused and in its original packaging.
Return procedure for PSMN8R5-40HSX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PSMN8R5-40HSX Tags
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