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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN8R5-40MSDX

Name: PSMN8R5-40MSDX
Brand: Nexperia USA Inc.
SKU: PSMN8R5-40MSDX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN8R5-40MSDX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SOT-1210, 8-LFPAK33 (5-Lead)

Datasheet:: PSMN8R5-40MSDX.pdf

Description:: MOSFET N-CH 40V 60A LFPAK33

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Product details

Overview

PSMN8R5-40MSDX from Nexperia is a standard-level N-channel enhancement-mode MOSFET in LFPAK33 (SOT1210) package, rated for 40 V V_DS, 8.5 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and 60 A continuous drain current at T_mb = 25 °C. It employs NextPower-S3 TrenchMOS Superjunction technology and is qualified to 175 °C junction temperature, targeting high-efficiency, high-frequency DC–DC converters and synchronous rectification.

For engineers reviewing the PSMN8R5-40MSDX datasheet, PSMN8R5-40MSDX pinout, PSMN8R5-40MSDX application, or PSMN8R5-40MSDX equivalent, key selection criteria include its low Q_G (13.4 nC typ), ultra-low Q_GD (2 nC typ), soft body-diode recovery (t_rr = 22 ns, Q_r = 15 nC), and clip-bonded 175 °C-rated construction - all critical for EMI-sensitive, high-density power stages.

Technical Context

This MOSFET uses TrenchMOS Superjunction architecture with optimized charge distribution to achieve simultaneous low R_DS(on) (7.4–8.5 mΩ) and low dynamic gate charges (Q_G(tot) = 13.4 nC, Q_GD = 2 nC). Its gate threshold voltage (V_GS(th) = 3.12 V typ) and negative temperature coefficient (−5.9 mV/K) ensure stable turn-on behavior across −55 °C to 175 °C.

The LFPAK33 package integrates a solderable mounting base connected directly to the drain, delivering R_th(j-mb) = 2.33 K/W and enabling high-current conduction with minimal parasitic inductance. The source terminals (pins 1–3) and gate (pin 4) are fully isolated from the drain-mounting base, supporting robust layout for high dV/dt switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V maximum - defines safe operating voltage ceiling in buck, boost, and synchronous rectifier topologies
R_DS(on)	8.5 mΩ max at V_GS = 10 V, I_D = 15 A, T_j = 25 °C - enables <1 W conduction loss at 40 A in compact thermal designs
I_D (cont)	60 A at T_mb = 25 °C - validated continuous current under real board-mount conditions, not die-limited
Q_G(tot)	13.4 nC typical - reduces gate drive power and enables >1 MHz switching without excessive driver stress
t_rr / Q_r	22 ns / 15 nC - minimizes reverse recovery losses and voltage overshoot in hard-switched synchronous rectifiers
R_th(j-mb)	2.33 K/W typical - allows direct thermal coupling to heatsink or copper plane, bypassing PCB vias for lower thermal resistance
V_GS(th)	3.12 V typical - ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers

Pinout & Package

LFPAK33 (SOT1210) is a leadless, clip-bonded surface-mount package with an exposed copper mounting base (drain-connected), three parallel source leads, and one gate lead. It eliminates wire bonds and die attach glue, achieving 175 °C qualification and high reliability in thermally demanding applications.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three low-inductance, parallel source connections - reduce source loop inductance and improve current sharing in high di/dt operation
4	Gate (G)	Single gate input with 0.8 Ω typical gate resistance - simplifies gate driver layout and damping requirements
Mounting Base (mb)	Drain (D)	Exposed copper pad electrically and thermally connected to drain - serves as primary current path and thermal interface to PCB/heatsink

Key Features

Feature	Design Value
Avalanche rated, 100% tested	46 mJ unclamped single-pulse energy at T_j = 25 °C - provides robustness against inductive switching transients without external snubbers
NextPower-S3 superfast switching	Soft body-diode recovery (t_a = 14 ns, t_b = 8.5 ns) - suppresses voltage ringing and EMI during commutation
Low Q_RR, Q_G, Q_GD	Q_GD = 2 nC typ, Q_RR ≈ 15 nC - cuts switching losses by >30% vs. legacy MOSFETs in 500 kHz–2 MHz DC–DC stages
Clip-bonded, solder die attach	No wire bonds or epoxy - eliminates bond-wire fatigue failure modes and supports 175 °C continuous operation
Wave-solderable exposed leads	Visual solder joint inspection enabled on all source/gate terminals - improves manufacturing yield and field-reliability verification

Applications

Secondary Side Synchronous Rectification

High-Frequency DC–DC Converters

Use Scenario: Used as the low-side switch in isolated LLC or forward converters delivering 12 V/40 A to server VRMs or telecom POL modules.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode - actively controlled to conduct only during positive V_DS half-cycles with precise gate timing.

Use Value: Reduces conduction loss by 65% vs. 40 V Schottky (0.55 V VF), enabling >96% efficiency at 1 MHz switching with no forced air cooling.

Use Scenario: High-density 48 V–12 V intermediate bus converter in industrial PLCs and edge AI accelerators.

IC Role / Device Role / Timing Role: Primary-side high-speed switching element in hard-switched synchronous buck topology.

Use Value: Low Q_G/Q_GD enables clean 1.2 MHz operation with <5 ns gate delay variation, minimizing dead-time loss and improving light-load efficiency.

Brushless DC Motor Drive

LED Lighting Drivers

Use Scenario: Low-side switch in 24 V, 3-phase BLDC inverter for HVAC blowers and e-bike controllers.

IC Role / Device Role / Timing Role: Phase-leg low-side MOSFET - commutated at up to 20 kHz PWM with fast turn-off to minimize shoot-through risk.

Use Value: Soft body-diode recovery prevents voltage spikes during freewheeling, eliminating need for RC snubbers and reducing BOM count by two components per phase.

Use Scenario: Constant-current switch in 36 V input, 2 A LED string drivers for commercial downlights and street lighting.

IC Role / Device Role / Timing Role: PWM-controlled current regulator in buck-based constant-current topology.

Use Value: 8.5 mΩ R_DS(on) limits conduction loss to <0.34 W at full load, allowing sealed aluminum housing without thermal derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP040N04L	R_DS(on) = 4.0 mΩ (lower), but Q_G = 22 nC (higher); TO-252 package; 150 °C rated	Better conduction loss, but higher gate drive loss and inferior thermal resistance (R_th(j-a) ≈ 50 K/W vs. 130 K/W for PSMN8R5-40MSDX)	Prefer when board space allows TO-252 and thermal design prioritizes conduction over switching loss.
Vishay SiHL860ED	R_DS(on) = 8.0 mΩ, Q_G = 12.5 nC, LFPAK56 package; 175 °C rated; no avalanche rating	Similar dynamic performance but lacks 100% avalanche testing - unsuitable for unclamped inductive loads	Acceptable where system-level protection guarantees no avalanche stress, and larger LFPAK56 footprint is available.

Compared with IPP040N04L and SiHL860ED, PSMN8R5-40MSDX delivers the best balance of low Q_GD, soft recovery, and 175 °C reliability in a compact LFPAK33 footprint - making it optimal for space-constrained, high-frequency, and thermally aggressive applications where EMI and ruggedness are critical.

Availability

PSMN8R5-40MSDX is available at Aetrix Electronics and suitable for secondary-side synchronous rectification, high-frequency DC–DC converters, and brushless DC motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PSMN8R5-40MSDX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade power MOSFETs.

This device belongs to Nexperia's NextPower-S3 family - engineered specifically for high-efficiency, high-frequency power conversion in server, telecom, and industrial applications where low switching loss, soft recovery, and 175 °C operation are mandatory.

FAQ

What is the maximum continuous drain current for PSMN8R5-40MSDX under real-world PCB conditions?

The datasheet specifies 60 A continuous drain current at T_mb = 25 °C, validated on a standard 25.4 mm × 25.4 mm, 70 µm copper FR4 board. This value reflects actual board-level thermal performance-not die-limited capability-and assumes proper mounting base soldering and adequate copper area. At T_mb = 100 °C, rated current drops to 42 A per Fig. 2.

Does PSMN8R5-40MSDX require a gate resistor for stability in high-speed switching?

Yes - although its intrinsic gate resistance is low (0.8 Ω typ), a 5 Ω external gate resistor is recommended per Fig. 12 test conditions to dampen ringing and control dV/dt during turn-on/off. This value balances switching speed (t_r = 3.2 ns, t_f = 2.8 ns) with EMI suppression and driver safety in hard-switched topologies.

How is the mounting base (drain) electrically isolated from the source and gate terminals?

The mounting base is internally connected exclusively to the drain region. Pins 1–3 (source) and pin 4 (gate) are fully isolated from the base via molded plastic and internal dielectric barriers. Electrical isolation between drain and source is rated to 40 V V_DS; creepage and clearance meet IEC 60134 requirements for reinforced insulation in industrial applications.

Can PSMN8R5-40MSDX be used in automotive applications?

No - this part is not AEC-Q101 qualified and is explicitly designated as non-automotive in Nexperia's legal disclaimers. It lacks automotive-specific stress testing (e.g., HTOL, temperature cycling, ESD HBM ≥ 2 kV) and is intended for industrial, computing, and consumer power systems only.

PSMN8R5-40MSDX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SOT-1210, 8-LFPAK33 (5-Lead)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 3.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1322 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 59W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK33

PSMN8R5-40MSDX FAQ

1.How can I place an order for PSMN8R5-40MSDX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN8R5-40MSDX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN8R5-40MSDX reliable?

The price and inventory of PSMN8R5-40MSDX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN8R5-40MSDX is usually 5 days.

3.What payment methods are accepted for PSMN8R5-40MSDX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN8R5-40MSDX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN8R5-40MSDX?

PSMN8R5-40MSDX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN8R5-40MSDX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN8R5-40MSDX?

For technical support, including PSMN8R5-40MSDX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN8R5-40MSDX requirements.

6.How does Aetrix verify that PSMN8R5-40MSDX is sourced from the original manufacturer or authorized distributors?

All PSMN8R5-40MSDX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN8R5-40MSDX meets industry standards.

7.What is the process for return or replacement of PSMN8R5-40MSDX?

All PSMN8R5-40MSDX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN8R5-40MSDX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN8R5-40MSDX part is unused and in its original packaging.

Return procedure for PSMN8R5-40MSDX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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