Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. PSMN8R7-100YSFX

Part No.:
PSMN8R7-100YSFX
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
-
Datasheet:
AetrixPSMN8R7-100YSFX.pdf
Description:
PSMN8R7-100YSF/SOT669/LFPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,950

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

PSMN8R7-100YSFX from Nexperia is a 100 V, 9 mΩ N-channel MOSFET in LFPAK56 (SOT669) package, qualified to 175 °C junction temperature, featuring low QG × RDS(on) figure-of-merit (38.5 nC total gate charge, 7.2 mΩ typical RDS(on) at 25 °C), strong avalanche rating (234 mJ), and wave-solderable construction. It serves as a high-efficiency switching device in synchronous rectification and half-bridge topologies for AC-DC adapters and BLDC motor drives.

For engineers reviewing the PSMN8R7-100YSFX datasheet, PSMN8R7-100YSFX pinout, PSMN8R7-100YSFX application, or PSMN8R7-100YSFX equivalent, this page delivers verified electrical parameters, thermal resistance (0.67 K/W j-mb), avalanche ruggedness, diode recovery characteristics (52.6 nC Qr), and LFPAK56 mounting-base thermal interface details critical for power stage layout and reliability validation.

Technical Context

This NextPower MOSFET uses a trench-gated silicon process optimized for low conduction and switching losses in hard-switched and resonant converters. Its 100 V VDS rating supports 48 V industrial bus and USB-PD 3.1 EPR input stages, while the 175 °C Tj qualification enables operation in thermally constrained enclosures without derating.

The device integrates an intrinsic body diode with 45.5 ns reverse recovery time and 0.8–1.2 V forward voltage at 25 A, enabling reliable synchronous rectification without external Schottky diodes. Gate threshold voltage (2–4 V) and plateau voltage (4.9 V) support standard 5 V or 10 V gate drivers without level-shifting.

Key Specifications

ParameterValue and Actual Design Meaning
VDS100 V - Supports 48 V nominal bus systems with 2× safety margin for transient overvoltage in industrial and adapter applications.
RDS(on) @ 25 °C7.2 mΩ typ - Enables ≤ 18 W conduction loss at 90 A continuous drain current with minimal heatsinking.
QG(tot)38.5 nC - Low gate charge reduces driver power demand and enables >500 kHz switching in high-frequency DC-DC converters.
EAS234 mJ - Avalanche-rated and 100% tested, allowing robust operation during inductive turn-off transients in motor control.
Rth(j-mb)0.67 K/W - Direct mounting base thermal path delivers high-power dissipation (198 W) with low ΔT between junction and PCB copper.
Qr52.6 nC - Low recovered charge minimizes switching loss and voltage spiking in synchronous rectifier configurations.
VGS(th)2–4 V - Compatible with standard logic-level and microcontroller GPIO drive without gate boosters.
Tj max175 °C - Qualified for extended-life operation in sealed consumer electronics and industrial motor drives.

Pinout & Package

LFPAK56 (SOT669) is a 4-lead surface-mount plastic package with exposed mounting base connected to drain, offering superior thermal and power cycling performance versus SO-8. The package is wave-solderable and features 3 parallel source terminals for low-inductance, high-current routing.

Pin/TerminalCircuit RoleDesign Meaning
1SourcePrimary low-side return path; tied internally to pins 2 and 3 for reduced source inductance in high-dI/dt switching.
2SourceRedundant source connection to minimize loop inductance and improve EMI in half-bridge layouts.
3SourceThird source terminal enabling symmetric PCB layout and balanced current sharing across three copper pours.
4GateControl input with 0.8 Ω internal gate resistance; requires <5 Ω external series resistor for optimal ringing suppression.
Mounting BaseDrainExposed copper pad electrically connected to drain; provides primary thermal path to PCB and must be soldered to ≥ 200 mm² copper area.

Key Features

FeatureDesign Value
Low Qrr52.6 nC - Reduces turn-on loss and voltage overshoot in synchronous rectifiers operating at >100 kHz.
175 °C qualificationRated for continuous operation up to 175 °C junction temperature - eliminates thermal derating in compact LED drivers and fast-charge adapters.
Low QG × RDS(on)277 - Industry-leading figure-of-merit enabling high efficiency in both conduction- and switching-limited designs.
Avalanche energy rating234 mJ - 100% tested unclamped avalanche capability ensures reliability in flyback and LLC resonant converters under overload.
Wave-solderable LFPAK56Compatible with standard wave soldering profiles - eliminates reflow-only constraints in mixed-technology PCB assembly.

Applications

Synchronous Rectifier in AC-DC AdaptersBLDC Motor Control

Use Scenario: Used as secondary-side switch in 65 W–100 W USB-PD 3.0/3.1 adapters to replace Schottky diodes and improve efficiency by 2–3%.

IC Role / Device Role / Timing Role: N-channel power switch operating in synchronous rectification mode, driven by transformer-coupled or controller-based timing signals.

Use Value: 7.2 mΩ RDS(on) at 25 °C reduces conduction loss below 0.5 W at 20 A, enabling smaller heatsinks and higher power density.

Use Scenario: High-side and low-side switch in 3-phase inverter stages of cordless power tools and HVAC blowers.

IC Role / Device Role / Timing Role: Power MOSFET in half-bridge configuration, switched at 20–40 kHz with dead-time control to prevent shoot-through.

Use Value: 175 °C Tj rating and 234 mJ EAS ensure robustness during motor stall and regenerative braking events.

USB-PD Fast-Charge AdaptersLED Lighting Drivers

Use Scenario: Primary-side switch in active clamp flyback or QR flyback topologies delivering up to 140 W output.

IC Role / Device Role / Timing Role: Main switching transistor controlled by PWM IC with ZVS capability enabled by low Coss (532 pF).

Use Value: 100 V rating accommodates 90 VAC–264 VAC universal input with margin; 38.5 nC QG enables clean gate drive with low-cost 1 A drivers.

Use Scenario: Buck or buck-boost switch in constant-current LED drivers for commercial downlights and street lighting.

IC Role / Device Role / Timing Role: High-efficiency power switch operating at 100–500 kHz PWM frequency with analog dimming control.

Use Value: Low RDS(on) drift over temperature (15.8 mΩ at 175 °C) maintains stable current regulation across ambient range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Infineon IPP040N10N5100 V, 4.0 mΩ RDS(on), TO-220 package, 150 °C ratedHigher RDS(on) but lower cost; larger footprint and inferior thermal resistance (1.2 K/W j-case)Select when board space allows TO-220 and thermal budget permits higher junction rise.
ON Semiconductor NTMFS5C673NL100 V, 6.7 mΩ RDS(on), PowerTrench 5x6 mm package, 175 °C ratedSimilar thermal performance (0.75 K/W j-tab), but higher QG (48 nC) increases driver lossPrefer when existing layout uses 5x6 mm footprint and gate drive strength exceeds 1 A peak.

Compared with IPP040N10N5 and NTMFS5C673NL, PSMN8R7-100YSFX offers the lowest RDS(on) × QG product (277 vs. 360 and 320), best thermal resistance (0.67 K/W), and wave-solder compatibility - making it optimal for high-density, high-reliability adapter and motor-control designs where PCB assembly flexibility matters.

Availability

PSMN8R7-100YSFX is available at Aetrix Electronics and suitable for USB-PD fast-charge adapters, BLDC motor inverters, and industrial LED lighting drivers requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for PSMN8R7-100YSFX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.

This device belongs to the NextPower family - engineered specifically for high-efficiency, high-reliability power conversion in compact, thermally demanding applications such as fast-charging adapters and motor drives.

FAQ

What is the maximum continuous drain current for PSMN8R7-100YSFX at 100 °C mounting base temperature?

At Tmb = 100 °C, the continuous drain current is 71 A per the datasheet Fig. 2. This value accounts for thermal derating due to reduced heat transfer from junction to mounting base at elevated temperatures, and assumes proper PCB copper area (≥ 200 mm²) and no forced airflow.

Is PSMN8R7-100YSFX suitable for use in automotive applications?

No - PSMN8R7-100YSFX is not AEC-Q101 qualified and is explicitly designated for industrial and consumer applications. Nexperia's documentation states non-automotive qualified products are unsuitable for safety-critical or life-support systems, and automotive use voids warranty and liability coverage.

How does the LFPAK56 package improve thermal performance compared to standard SO-8?

The LFPAK56 exposes the drain-connected mounting base directly to the PCB, achieving 0.67 K/W junction-to-mounting-base thermal resistance - nearly 2× better than SO-8's typical 1.3 K/W. This enables 198 W power dissipation at Tmb = 25 °C without a heatsink, reducing system size and cost in high-power adapters.

What is the significance of the 100% avalanche testing for PSMN8R7-100YSFX?

Every unit undergoes unclamped inductive switching test at IAS = 30.3 A and EAS = 234 mJ, verifying robustness against transient overcurrents in flyback, LLC, and motor-drive circuits. This eliminates field failures due to single-event avalanche stress and supports design without external snubbers in many topologies.

PSMN8R7-100YSFX Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
-
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
-
Technology:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
90A (Tj)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

PSMN8R7-100YSFX FAQ

1.How can I place an order for PSMN8R7-100YSFX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN8R7-100YSFX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN8R7-100YSFX reliable?

The price and inventory of PSMN8R7-100YSFX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN8R7-100YSFX is usually 5 days.

3.What payment methods are accepted for PSMN8R7-100YSFX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN8R7-100YSFX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN8R7-100YSFX?

PSMN8R7-100YSFX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN8R7-100YSFX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN8R7-100YSFX?

For technical support, including PSMN8R7-100YSFX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN8R7-100YSFX requirements.

6.How does Aetrix verify that PSMN8R7-100YSFX is sourced from the original manufacturer or authorized distributors?

All PSMN8R7-100YSFX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN8R7-100YSFX meets industry standards.

7.What is the process for return or replacement of PSMN8R7-100YSFX?

All PSMN8R7-100YSFX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN8R7-100YSFX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN8R7-100YSFX part is unused and in its original packaging.

Return procedure for PSMN8R7-100YSFX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PSMN8R7-100YSFX Tags

  • PSMN8R7-100YSFX
  • PSMN8R7-100YSFX PDF
  • PSMN8R7-100YSFX Datasheet
  • PSMN8R7-100YSFX Specifications
  • PSMN8R7-100YSFX Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. PSMN8R7-100YSFX
  • Buy PSMN8R7-100YSFX
  • PSMN8R7-100YSFX Price
  • PSMN8R7-100YSFX Distributor
  • PSMN8R7-100YSFX Supplier
  • PSMN8R7-100YSFX Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER