Nexperia USA Inc. PSMN8R7-80BS,118

Overview

PSMN8R7-80BS,118 from Nexperia is a standard-level N-channel MOSFET in D2PAK (SOT404) package, rated for 80 V drain-source voltage, 8.7 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, 90 A continuous drain current at T_mb = 25 °C, and qualified for operation up to 175 °C junction temperature. It serves as a high-efficiency power switch in industrial DC-DC converters, server power supplies, motor control stages, and load switching circuits.

For engineers reviewing the PSMN8R7-80BS,118 datasheet, PSMN8R7-80BS,118 pinout, PSMN8R7-80BS,118 application, or PSMN8R7-80BS,118 equivalent, key selection criteria include its 8.7 mΩ conduction resistance at 25 °C, 52 nC total gate charge, 0.54 K/W junction-to-mounting-base thermal resistance, and D2PAK package's high-current capability with integrated drain-connected mounting base.

Technical Context

This MOSFET employs planar silicon technology optimized for standard-gate-drive compatibility (V_GS = 10 V), delivering low conduction losses via 7.5–8.7 mΩ R_DS(on) across 25–100 °C junction temperatures and robust switching performance with 11 nC gate-drain charge and 44–52 nC total gate charge under defined test conditions.

Its thermal design centers on direct die-to-mounting-base heat transfer (R_th(j-mb) = 0.54–0.88 K/W), enabling high-power operation without external heatsink dependency in PCB-mounted configurations, while avalanche ruggedness of 120 mJ supports unclamped inductive switching reliability.

Key Specifications

Pinout & Package

D2PAK (SOT404) plastic surface-mount package with isolated gate terminal, drain connected directly to the exposed mounting base (pin 2 and mb), and source on lead 3; designed for high-current PCB mounting with thermal pad soldering.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP80NF55-08 and IRF1404ZPBF, PSMN8R7-80BS,118 offers superior thermal performance in surface-mount form factor, tighter V_DS margin for 48 V systems, and optimized gate charge for high-frequency switching-making it preferred for space-constrained, thermally demanding industrial and server power designs.

Availability

PSMN8R7-80BS,118 is available at Aetrix Electronics and suitable for server power supplies, industrial DC-DC converters, BLDC motor control, and hot-swap load switching requiring stable component supply and long-term production continuity.

Supply support for PSMN8R7-80BS,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, with manufacturing rooted in process consistency and automotive-grade quality systems.

This device belongs to Nexperia's standard-level power MOSFET product line, engineered for industrial and communications equipment where robustness, thermal efficiency, and gate-drive simplicity are prioritized over ultra-low-voltage or logic-level operation.

FAQ

What is the maximum continuous drain current for PSMN8R7-80BS,118 at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is derated to approximately 64 A per the datasheet Figure 1 and Table 4 limiting values. This reflects thermal constraints rather than electrical limits, and operation at this current requires adequate PCB copper area and airflow to maintain base temperature stability.

Does PSMN8R7-80BS,118 have an integrated gate resistor or require external gate driving components?

No, it has no integrated gate resistor; the internal gate resistance is 1 Ω (AC, f = 1 MHz), which is inherent to the die structure. An external series gate resistor (typically 2.2–10 Ω) is required to control dV/dt, suppress oscillation, and limit peak gate current during switching transitions.

Can PSMN8R7-80BS,118 be used in synchronous rectification applications?

Yes-the device features a fast, low-loss body diode with 42 ns reverse recovery time and 66 nC recovered charge, validated in Figure 17 and Table 6. Its 0.79 V forward voltage at 10 A and 25 °C supports efficient synchronous rectification in flyback and forward converters when paired with appropriate gate timing control.

Is the mounting base (mb) electrically isolated from the drain in PSMN8R7-80BS,118?

No-the mounting base is electrically connected to the drain (pin 2), as confirmed in Table 2 pinning information and Figure 18 package outline. This requires careful PCB layout to ensure the thermal pad is routed to the drain net and insulated from other potentials using appropriate clearance and solder mask definition.