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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN8R9-100BSEJ

Name: PSMN8R9-100BSEJ
Brand: Nexperia USA Inc.
SKU: PSMN8R9-100BSEJ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN8R9-100BSEJ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: PSMN8R9-100BSEJ.pdf

Description:: MOSFET N-CH 100V 108A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PSMN8R9-100BSE from Nexperia is an N-channel enhancement-mode MOSFET in D2PAK (SOT404) package, rated for 100 V drain-source voltage, 8 mΩ typical R_DS(on) at V_GS = 10 V and T_j = 25 °C, and qualified for continuous operation up to 175 °C junction temperature. It delivers robust linear-mode SOA performance for hot-swap and e-fuse applications in 48 V telecom power systems.

For engineers reviewing the PSMN8R9-100BSE datasheet, PSMN8R9-100BSE pinout, PSMN8R9-100BSE application, or PSMN8R9-100BSE equivalent, this device is selected for high-reliability load switching where avalanche ruggedness, low conduction loss, and thermal stability under pulsed inrush currents are critical design requirements.

Technical Context

This MOSFET employs a SuperSOA silicon process optimized for stable operation in the linear (active) region, enabling reliable current limiting during soft-start and hot-swap events without thermal runaway. Its gate threshold voltage (V_GS(th)) ranges from 1.8 V to 4.6 V, with plateau voltage at 5.3 V, supporting standard-level gate drive compatibility.

Thermal resistance from junction to mounting base is 0.42 K/W typical, enabling high-power dissipation when mounted on a thermally optimized PCB copper area. The device features 100% avalanche energy testing (E_AS = 422 mJ), and its dynamic parameters - Q_G(tot) = 114 nC typ, Q_GD = 32 nC typ - support controlled switching in high-current DC/DC and bus protection circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V maximum - supports 48 V backplane systems with ≥2× safety margin against transients
R_DS(on)	8 mΩ typ @ V_GS = 10 V, T_j = 25 °C - enables ≤1.25 W conduction loss at 35 A continuous
I_D	75 A max @ T_mb = 25 °C - defines steady-state current capability with proper heatsinking
E_AS	422 mJ non-repetitive avalanche energy - withstands unclamped inductive turn-off stress in e-fuse operation
R_th(j-mb)	0.42 K/W typical - allows ~700 W transient power handling for short pulses with ΔT_j-mb < 30 K
Q_G(tot)	114 nC typical - determines gate driver current requirement (~11.4 mA avg for 10 µs turn-on)
V_GS(th)	1.8–4.6 V range - ensures reliable turn-on with standard 5 V or 10 V logic-level controllers

Pinout & Package

D2PAK (SOT404) plastic surface-mount package with 3 terminals (lead 2 cropped), 11 mm × 10 mm × 4.3 mm body, and integral mounting base electrically connected to drain.

Pin/Terminal	Circuit Role	Design Meaning
1	G	Gate input - controls channel conduction; requires low-impedance drive due to 114 nC total charge
2	D	Drain - high-side connection point; internally bonded to mounting base for thermal and electrical continuity
3	S	Source - return path for load current; referenced to control ground in low-side switch configurations
mb	Mounting base	Electrically tied to drain - must be soldered to large copper pour for thermal management and EMI control

Key Features

Feature	Design Value
SuperSOA linear-mode operation	Stable safe operating area up to 100 V × 75 A with no secondary breakdown - enables precise current limiting in hot-swap controllers
Avalanche-rated & 100% tested	Guaranteed 422 mJ single-pulse energy handling - eliminates need for external clamping in inductive load disconnect
Low R_DS(on) at high temperature	27 mΩ max @ T_j = 175 °C - maintains efficiency during sustained overload or ambient temperature rise
D2PAK thermal interface	0.42 K/W junction-to-mounting-base resistance - enables >250 W continuous dissipation with 25 °C base temperature
Standard-level gate drive	V_GS(th) ≤ 4.6 V and V_GS(pl) = 5.3 V - compatible with common 5 V microcontrollers and hot-swap controller outputs

Applications

Hot Swap Controller Interface

48 V Telecom Load Switch

Use Scenario: Controlled insertion of line cards into live 48 V backplane without disrupting system voltage or triggering upstream OCP.

IC Role / Device Role: Main pass transistor in high-side configuration, driven by dedicated hot-swap controller (e.g., LTC4215).

Use Value: Withstands 419 A peak inrush current (t_p ≤ 10 µs) and dissipates <1.5 W during steady-state 60 A operation due to 8 mΩ R_DS(on).

Use Scenario: Remote ON/OFF control of downstream power modules in distributed telecom power architecture.

IC Role / Device Role: High-side load switch isolating 48 V supply from sub-systems during fault or maintenance.

Use Value: 100% avalanche-tested design prevents catastrophic failure during cable short-circuit events; 175 °C rating supports operation in sealed chassis.

Programmable E-Fuse

Soft-Start Circuit for DC/DC Converters

Use Scenario: Replace mechanical fuses with electronically resettable overcurrent protection in server PSU output rails.

IC Role / Device Role: Current-sense and power-switch element, paired with current-sense amplifier and comparator.

Use Value: Linear-mode SOA allows precise current limiting at 20–50 A with <±5% tolerance; 422 mJ E_AS absorbs energy during fast fault clearing.

Use Scenario: Gradual ramp-up of input current to large bulk capacitance in high-power POL converters.

IC Role / Device Role: Gate-controlled series element between input source and converter input capacitor bank.

Use Value: Low V_GS(th) dispersion (1.8–4.6 V) ensures predictable turn-on timing; D2PAK mounting base provides stable thermal reference for current-sense accuracy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL120N10F7	R_DS(on) = 7.5 mΩ typ, but only rated to 150 °C T_j; lower Q_G (85 nC) but no 100% avalanche test data published	Limited to lower ambient temperature environments; not recommended for telecom chassis with >100 °C baseplate temperatures	Select only if thermal budget permits reduced heatsinking and avalanche stress is mitigated externally
IRF3205PBF	Higher R_DS(on) (8.0 mΩ min, but 12 mΩ typ); 175 °C rated but E_AS unspecified; TO-220 package limits power density	Requires larger PCB area and less effective thermal coupling than D2PAK; unsuitable for space-constrained hot-swap modules	Consider only for legacy designs with existing TO-220 footprint and relaxed SOA requirements

Compared with STL120N10F7 and IRF3205PBF, PSMN8R9-100BSE uniquely combines 175 °C qualification, guaranteed avalanche energy, and D2PAK thermal performance - making it the only option validated for unclamped linear-mode operation in 48 V hot-swap systems requiring zero field failures.

Availability

PSMN8R9-100BSE is available at Aetrix Electronics and suitable for hot-swap, e-fuse, and 48 V telecom load switching applications requiring stable component supply across multi-year production cycles.

Supply support for PSMN8R9-100BSE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs.

This device belongs to Nexperia's SuperSOA power MOSFET product line, engineered specifically for robust linear-mode operation in power integrity and fault-protection circuits - not general-purpose switching.

FAQ

What is the maximum continuous drain current at 100 °C mounting base temperature?

The datasheet specifies 74 A maximum continuous drain current at T_mb = 100 °C (Fig. 2), derated from 75 A at 25 °C. This reflects thermal limitation of the D2PAK package, not silicon capability - actual current is constrained by PCB copper area and airflow. Operation above this value risks exceeding 175 °C junction temperature.

Is the mounting base electrically isolated from the drain terminal?

No - the mounting base (mb) is internally connected to pin 2 (drain), as confirmed in Table 2 and Figure 18. This direct connection is essential for both thermal conduction and circuit functionality in high-side switch configurations. PCB layout must treat the exposed metal pad as part of the drain net.

Can PSMN8R9-100BSE be used with 5 V gate drive?

Yes - its V_GS(th) minimum is 1.8 V and typical plateau voltage is 5.3 V, enabling functional turn-on with 5 V logic. However, R_DS(on) rises to ~18.5 mΩ at T_j = 100 °C under 5 V drive (vs. 8 mΩ at 10 V), increasing conduction loss by >130%. For efficiency-critical designs, 10 V drive is strongly recommended.

Does this MOSFET require a gate resistor for safe operation?

A gate resistor is required to control dV/dt and prevent oscillation, especially given its 114 nC total gate charge and 32 nC gate-drain charge. Typical values range from 2.2 Ω to 10 Ω depending on switching speed vs. EMI trade-off. The datasheet Fig. 14/15 characterization used R_G(ext) = 5 Ω - this value is validated for stable turn-on/turn-off without shoot-through in standard hot-swap layouts.

PSMN8R9-100BSEJ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 10mOhm @ 25A, 1V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 160 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9488 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 296W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

PSMN8R9-100BSEJ FAQ

1.How can I place an order for PSMN8R9-100BSEJ through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN8R9-100BSEJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN8R9-100BSEJ reliable?

The price and inventory of PSMN8R9-100BSEJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN8R9-100BSEJ is usually 5 days.

3.What payment methods are accepted for PSMN8R9-100BSEJ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN8R9-100BSEJ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN8R9-100BSEJ?

PSMN8R9-100BSEJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN8R9-100BSEJ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN8R9-100BSEJ?

For technical support, including PSMN8R9-100BSEJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN8R9-100BSEJ requirements.

6.How does Aetrix verify that PSMN8R9-100BSEJ is sourced from the original manufacturer or authorized distributors?

All PSMN8R9-100BSEJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN8R9-100BSEJ meets industry standards.

7.What is the process for return or replacement of PSMN8R9-100BSEJ?

All PSMN8R9-100BSEJ units undergo pre-shipment inspection (PSI). If there is an issue with PSMN8R9-100BSEJ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN8R9-100BSEJ part is unused and in its original packaging.

Return procedure for PSMN8R9-100BSEJ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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