Nexperia USA Inc. PSMN9R1-30YL,115

Overview

PSMN9R1-30YL from Nexperia is a logic-level N-channel TrenchMOS FET in LFPAK (SOT669) package, rated for 30 V V_DS, 7.8 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, 57 A continuous drain current at T_mb = 25 °C, and optimized for industrial and communications power stages including DC-DC converters and motor control.

For engineers reviewing the PSMN9R1-30YL datasheet, PSMN9R1-30YL pinout, PSMN9R1-30YL application, or PSMN9R1-30YL equivalent, this device offers verified low R_DS(on), logic-compatible gate drive (V_GS(th) = 1.3–2.15 V), high avalanche energy (17 mJ), and thermal resistance of 1.54 K/W from junction to mounting base - critical for compact, high-efficiency switching designs.

Technical Context

This FET employs TrenchMOS technology to achieve low conduction loss and fast switching with Q_G(tot) = 8.4 nC at V_GS = 4.5 V and Q_GD = 4.1 nC, enabling efficient operation in hard-switched topologies. Its gate threshold voltage (1.3–2.15 V at 25 °C) ensures reliable turn-on with standard 3.3 V or 5 V logic drivers.

The integrated source-drain diode exhibits V_SD = 0.9–1.2 V at I_S = 25 A and T_j = 25 °C, with t_rr = 13 ns and Q_r = 25 nC, supporting synchronous rectification and freewheeling in buck and half-bridge configurations without external Schottky supplementation.

Key Specifications

Pinout & Package

Package: LFPAK (SOT669), also known as Power-SO8 - a plastic single-ended surface-mount package with exposed mounting base connected to drain for enhanced thermal performance and mechanical stability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power FET applications.

Compared with PSMN9R1-30YL, IRLML6344TRPBF trades off thermal capability and current handling for ultra-small footprint, while DMN3025LFG-7 delivers lower conduction loss but demands stronger gate drive - making PSMN9R1-30YL the balanced choice for industrial-grade 30–57 A logic-driven switching where reliability, avalanche margin, and thermal design simplicity are prioritized.

Availability

PSMN9R1-30YL is available at Aetrix Electronics and suitable for Class-D amplifiers, server DC-DC converters, and industrial motor control requiring stable component supply across multi-year production cycles.

Supply support for PSMN9R1-30YL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, high-reliability discrete and logic devices for automotive, industrial, and computing markets.

This part belongs to Nexperia's TrenchMOS logic-level power FET product line, engineered specifically for high-efficiency, high-current switching in industrial and communications infrastructure where gate drive simplicity, thermal robustness, and avalanche tolerance are mandatory.

FAQ

What is the maximum continuous drain current for PSMN9R1-30YL at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is derated to 40 A per the Absolute Maximum Ratings table. This value is confirmed in Table 4 under "ID drain current" with conditions V_GS = 10 V and T_mb = 100 °C, and is visually supported by Figure 1 showing ID vs. T_mb curve intersection at 40 A.

Does PSMN9R1-30YL have an integrated body diode, and what are its key parameters?

Yes, it features an integrated source-drain diode with V_SD = 0.9–1.2 V at I_S = 25 A and T_j = 25 °C, reverse recovery time t_rr = 13 ns, and recovered charge Q_r = 25 nC - all specified in Table 6 under "Source-drain diode" section and validated in Figure 17.

Can PSMN9R1-30YL be driven directly by a 3.3 V microcontroller GPIO without a gate driver?

Yes - its V_GS(th) range (1.3–2.15 V at 25 °C) and R_DS(on) = 13.6 mΩ at V_GS = 4.5 V ensure usable conduction at 3.3 V. However, full enhancement (R_DS(on) ≤ 9.1 mΩ) requires ≥4.5 V; for optimal efficiency, a dedicated gate driver is recommended above 20 A loads.

What is the thermal resistance from junction to mounting base, and how is it measured?

R_th(j-mb) is 1.54 K/W (typical), defined as the steady-state thermal resistance between the silicon junction and the exposed mounting base (drain pad). It is derived from transient thermal impedance measurements per Figure 4 and validated under JEDEC JESD51-14 standards using a cold plate test setup.