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Nexperia USA Inc. PSMN9R3-60HSX
- Part No.:
- PSMN9R3-60HSX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-1205, 8-LFPAK56
- Datasheet:
-
PSMN9R3-60HSX.pdf
- Description:
- MOSFET 2N-CH 60V 40A LFPAK56D
- Quantity:
- Payment:
- Shipping:
Inventory:400
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Product details
Overview
PSMN9R3-60HS from Nexperia is a dual N-channel standard-level MOSFET in LFPAK56D (SOT1205) package, rated for 60 V drain-source voltage, 9.3 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C, 40 A continuous drain current, and qualified to 175 °C junction temperature - deployed in high-efficiency synchronous rectification and brushless DC motor control stages.
For engineers reviewing the PSMN9R3-60HS datasheet, PSMN9R3-60HS pinout, PSMN9R3-60HS application, or PSMN9R3-60HS equivalent, key selection criteria include dual-FET integration in a single LFPAK56D footprint, repetitive avalanche rating, copper-clip die attach for low thermal resistance (Rth(j-mb) = 2.21 K/W), and verified performance at elevated temperature (RDS(on) ≤ 20.8 mΩ at 175 °C).
Technical Context
This dual MOSFET integrates two identical N-channel TrenchMOS devices in a single LFPAK56D package with shared mounting base and isolated gate/source/drain terminals. Each FET supports independent switching with matched static and dynamic characteristics - including 34.2 nC total gate charge and 11 nC gate-drain charge under standardized 10 A/48 V conditions.
The device employs copper-clip construction and solder die attach to achieve robust thermal performance: Rth(j-mb) = 2.21 K/W enables high-power operation without external heatsinking when mounted on a thermally optimized PCB, while its 175 °C qualification supports operation in server PSU and industrial motor drive environments where ambient temperatures exceed 100 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V maximum - defines safe operating voltage ceiling in DC-to-DC converters and motor phase legs. |
| RDS(on) | 9.3 mΩ typ @ VGS = 10 V, Tj = 25 °C - enables <1 W conduction loss at 10 A, critical for high-efficiency synchronous rectification. |
| ID | 40 A continuous @ Tmb = 25 °C - limited by package thermal capacity, not silicon, enabling high-current density board layouts. |
| EAS | 103 mJ non-repetitive avalanche energy - supports robustness against inductive switching transients in BLDC and SMPS applications. |
| QG(tot) | 34.2 nC - determines gate driver power requirement and switching speed in hard-switched topologies. |
| Rth(j-mb) | 2.21 K/W - allows direct thermal coupling to PCB copper pour, eliminating need for mechanical heatsinks in many 48 V systems. |
| VGS(th) | 2.4–4.5 V - ensures reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers without level-shifting. |
Pinout & Package
LFPAK56D (SOT1205) is a dual-power SO8 variant with copper-clip construction, 8-pin surface-mount footprint, and exposed mounting base for low-inductance, high-current routing. Package dimensions: 4.95 × 5.30 × 1.02 mm (L × W × H), with 1.27 mm lead pitch and thermally enhanced bottom-side thermal pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | S1 | Source terminal of FET1 - electrically isolated from S2; connects to low-side return path of first half-bridge. |
| 2 | G1 | Gate terminal of FET1 - requires dedicated gate resistor and driver path to prevent cross-talk with G2. |
| 3 | S2 | Source terminal of FET2 - independent of S1; used for second half-bridge or dual-phase configuration. |
| 4 | G2 | Gate terminal of FET2 - must be driven separately to avoid shoot-through in synchronous configurations. |
| 5, 6 | D2 | Drain terminal of FET2 - internally paralleled pins reduce bond-wire inductance and improve current sharing. |
| 7, 8 | D1 | Drain terminal of FET1 - internally paralleled pins support high peak currents up to 228 A (pulsed). |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel integration | Two matched MOSFETs in one LFPAK56D package - reduces PCB area by >40% vs. discrete SO-8 pair and eliminates layout mismatch in half-bridge designs. |
| Repetitive avalanche rated | Rated for repetitive avalanche operation - enables reliable operation in inductive load switching without external snubbers in BLDC gate drives. |
| Copper-clip die attach | Eliminates wire bonds and reduces package inductance (<1.5 nH) - improves EMI performance and dV/dt immunity in fast-switching SMPS. |
| 175 °C junction qualification | Validated operation up to 175 °C - supports compact thermal design in sealed server PSUs and automotive-adjacent industrial enclosures. |
| Low QGD/QG ratio | 11 nC / 34.2 nC ≈ 0.32 - enhances Miller immunity and enables stable operation at high dV/dt (>50 V/ns) in synchronous rectifier mode. |
Applications
| Brushless DC Motor Control | High-Performance Server PSU |
|---|---|
|
Use Scenario: Three-phase inverter stage driving 48 V BLDC fans or pumps in data center cooling systems. IC Role / Device Role / Timing Role: Dual N-channel half-bridge switches controlling motor phase current commutation with synchronous rectification during freewheeling. Use Value: 9.3 mΩ RDS(on) minimizes conduction loss at 20–30 A RMS, while 103 mJ avalanche rating absorbs back-EMF spikes without clamping diodes. |
Use Scenario: Primary-side synchronous rectification in 48 V input, 12 V output LLC resonant converter for AI server power modules. IC Role / Device Role / Timing Role: High-side and low-side synchronous rectifier replacing Schottky diodes to reduce forward voltage drop and improve efficiency above 95%. Use Value: Matched RDS(on) and QG between FET1/FET2 enable precise timing alignment; copper-clip construction lowers thermal impedance for sustained 40 A operation. |
| DC-to-DC Converters | High-Efficiency Synchronous Rectification |
|
Use Scenario: 12 V to 1 V point-of-load (PoL) buck converter in GPU power delivery networks. IC Role / Device Role / Timing Role: Dual-FET configured as high-side switch and synchronous rectifier in integrated power stage (IPS) module. Use Value: Low 34.2 nC QG(tot) enables fast switching at 1 MHz+ frequencies; 2.21 K/W Rth(j-mb) sustains high duty-cycle operation without thermal throttling. |
Use Scenario: Secondary-side synchronous rectification in telecom-grade 48 V input isolated DC-DC bricks. IC Role / Device Role / Timing Role: Dual-FET used in interleaved synchronous rectifier topology to halve per-device current stress and improve thermal distribution. Use Value: Identical dynamic parameters (QGD, Ciss, Coss) ensure balanced current sharing; 24 nC Qr enables low-loss reverse recovery in hard-commutated topologies. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BSC093N06LS6 | Single N-channel 60 V MOSFET (9.3 mΩ), SO-8 package - no dual integration; higher Rth(j-mb) (3.0 K/W). | Requires two devices and larger PCB area; lacks avalanche ruggedness rating (not repetitive avalanche qualified). | Select only if dual-FET integration is unnecessary and board space permits discrete placement with separate thermal management. |
| Vishay SiZ340DT | Dual N-channel 60 V MOSFET in PowerPAIR® 3.3×3.3 package (10.5 mΩ), lower QG(tot) (27.5 nC), but unqualified above 150 °C. | Not rated for 175 °C operation; unsuitable for high-ambient server or industrial environments requiring extended thermal margin. | Prefer for cost-sensitive consumer applications below 105 °C ambient, where lower gate charge enables higher-frequency switching. |
Compared with PSMN9R3-60HS, BSC093N06LS6 increases component count and thermal resistance, while SiZ340DT trades off high-temperature reliability for slightly faster switching - making PSMN9R3-60HS the optimal choice for thermally constrained, high-reliability server and motor control designs.
Availability
PSMN9R3-60HS is available at Aetrix Electronics and suitable for brushless DC motor control, high-performance server power supply, and high-efficiency synchronous rectification requiring stable component supply across multi-year production cycles.
Supply support for PSMN9R3-60HS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-volume, high-reliability discrete and logic devices for automotive, industrial, and computing markets.
PSMN9R3-60HS belongs to Nexperia's TrenchMOS dual-FET product line, engineered specifically for high-efficiency power conversion in space-constrained, thermally demanding applications such as server PSUs and BLDC inverters.
FAQ
What is the maximum continuous drain current for PSMN9R3-60HS?
The maximum continuous drain current is 40 A at Tmb = 25 °C, limited by package thermal capacity rather than silicon capability. At Tmb = 100 °C, the rating remains 40 A due to the LFPAK56D's copper-clip construction and low Rth(j-mb) (2.21 K/W), enabling high-current operation without derating in well-designed thermal layouts.
Is PSMN9R3-60HS suitable for synchronous rectification in 48 V DC-DC converters?
Yes - its 9.3 mΩ RDS(on) at 10 V gate drive, matched dual-FET structure, and low QGD/QG ratio (0.32) make it ideal for synchronous rectification in 48 V input converters. The device's 103 mJ avalanche energy rating also handles reverse recovery stress without external snubbers in hard-commutated topologies.
Does PSMN9R3-60HS require gate resistors for stable switching?
Yes - each gate (G1 and G2) must be driven through an individual gate resistor to prevent cross-talk and ensure controlled turn-on/turn-off. Recommended values range from 2.2 Ω to 10 Ω depending on switching frequency and driver capability; lower values improve switching speed but increase EMI risk and gate driver stress.
Can PSMN9R3-60HS replace two separate SO-8 MOSFETs in existing designs?
Yes - the LFPAK56D (SOT1205) footprint is pin-compatible with dual SO-8 layouts when using appropriate PCB land patterns (per Figure 18 in the datasheet). Its dual-drain/dual-source pin configuration supports direct substitution, though gate routing must be updated to isolate G1 and G2 paths to avoid shoot-through.
PSMN9R3-60HSX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-1205, 8-LFPAK56
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Ta)
- Rds On (Max) @ Id, Vgs:
- 9.3mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 34.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2348pF @ 25V
- Power - Max:
- 68W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56D
PSMN9R3-60HSX FAQ
1.How can I place an order for PSMN9R3-60HSX through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN9R3-60HSX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN9R3-60HSX reliable?
The price and inventory of PSMN9R3-60HSX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN9R3-60HSX is usually 5 days.
3.What payment methods are accepted for PSMN9R3-60HSX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN9R3-60HSX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN9R3-60HSX?
PSMN9R3-60HSX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN9R3-60HSX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN9R3-60HSX?
For technical support, including PSMN9R3-60HSX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN9R3-60HSX requirements.
6.How does Aetrix verify that PSMN9R3-60HSX is sourced from the original manufacturer or authorized distributors?
All PSMN9R3-60HSX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN9R3-60HSX meets industry standards.
7.What is the process for return or replacement of PSMN9R3-60HSX?
All PSMN9R3-60HSX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN9R3-60HSX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN9R3-60HSX part is unused and in its original packaging.
Return procedure for PSMN9R3-60HSX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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