Nexperia USA Inc. PSMN9R5-100BS,118

Overview

PSMN9R5-100BS,118 from Nexperia is a standard-level N-channel MOSFET in D2PAK (SOT404) package, rated for 100 V drain-source voltage, 9.6 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, 89 A continuous drain current at T_mb = 25 °C, and qualified to 175 °C junction temperature. It serves as a high-efficiency power switch in industrial DC-DC converters, server power supplies, and motor control circuits where low conduction loss and standard gate drive compatibility are required.

For engineers reviewing the PSMN9R5-100BS,118 datasheet, PSMN9R5-100BS,118 pinout, PSMN9R5-100BS,118 application, or PSMN9R5-100BS,118 equivalent, key selection considerations include its 0.38 K/W junction-to-mounting-base thermal resistance, 82 nC total gate charge, avalanche energy rating of 177 mJ, and D2PAK mounting base connection to drain - critical for thermal management and layout in high-current switching designs.

Technical Context

This MOSFET employs a planar silicon process optimized for standard-level gate drive (V_GS = 10 V), delivering low R_DS(on) without requiring logic-level or enhanced gate drivers. Its gate threshold voltage ranges from 2–4 V at 25 °C and remains ≥1 V up to 175 °C, ensuring robust turn-on margin across temperature.

The device features an integrated source-drain diode with 0.85–1.2 V forward voltage at 15 A and 25 °C, 61.5 ns reverse recovery time, and 157 nC recovered charge - enabling synchronous rectification and hard-switched topologies where diode behavior impacts efficiency and EMI.

Key Specifications

Pinout & Package

Package: D2PAK (SOT404), plastic single-ended surface-mounted package with 3 leads (lead 2 cropped); mounting base (mb) electrically connected to drain and serves as primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRF1404PBF and STP90NF03L, PSMN9R5-100BS,118 delivers optimal balance of 100 V rating, 9.6 mΩ on-resistance, 82 nC gate charge, and D2PAK thermal performance - making it uniquely suited for high-efficiency, high-power-density 48 V industrial and datacenter power conversion where both voltage margin and thermal management are critical.

Availability

PSMN9R5-100BS,118 is available at Aetrix Electronics and suitable for DC-DC converters, server power supplies, and motor control systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial OEM programs.

Supply support for PSMN9R5-100BS,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.

This part belongs to Nexperia's standard-level TrenchMOS portfolio, engineered for high-current, high-efficiency switching in industrial power supplies and motor drives where robustness, thermal performance, and gate-drive simplicity are prioritized over ultra-low voltage operation.

FAQ

Is PSMN9R5-100BS,118 suitable for synchronous rectification in a 48 V to 12 V LLC converter?

Yes. Its 61.5 ns reverse recovery time, 157 nC recovered charge, and 0.85–1.2 V source-drain forward voltage at 15 A enable efficient synchronous rectification. The D2PAK mounting base provides low-inductance, low-thermal-resistance connection to the PCB, critical for minimizing voltage spikes and thermal stress in high-frequency LLC topologies.

What is the maximum continuous drain current at T_mb = 100 °C?

The datasheet specifies 63 A continuous drain current at T_mb = 100 °C and V_GS = 10 V. This reflects thermal derating due to reduced heat transfer from junction to mounting base as base temperature rises - design must ensure T_mb stays ≤100 °C under full load to sustain this current rating.

Does the mounting base require electrical isolation from the PCB ground plane?

No. The mounting base is internally connected to the drain terminal (pin 2). It must be electrically tied to the drain net and thermally coupled to a large copper area or heatsink. Isolation would prevent proper thermal conduction and violate the device's thermal design intent per Figure 2 and Table 5.

Can PSMN9R5-100BS,118 replace a TO-220 MOSFET in an existing design?

Yes, with layout adaptation. Its D2PAK footprint differs from TO-220: SOT404 has wider lead spacing, larger body, and exposed drain pad. Thermal performance improves (R_th(j-mb) = 0.38 K/W vs typical TO-220 R_th(j-c) ≈ 1.0 K/W), but PCB land pattern, solder stencil, and mechanical mounting must be revised to match SOT404 dimensions in Figure 18.