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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMNR67-30YLEX

Name: PSMNR67-30YLEX
Brand: Nexperia USA Inc.
SKU: PSMNR67-30YLEX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMNR67-30YLEX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SOT-1023, 4-LFPAK

Datasheet:: PSMNR67-30YLEX.pdf

Description:: PSMNR67-30YLE/SOT1023/4 LEADS

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PSMNR67-30YLE from Nexperia is an N-channel 30 V ASFET in LFPAK56E (SOT1023) package, engineered for hot-swap, e-Fuse, and linear-mode load switching with enhanced Safe Operating Area (SOA). It delivers 0.64 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, supports 365 A continuous drain current at T_mb = 25 °C, and features copper-clip construction for low parasitic inductance-enabling robust inrush current control in 12–20 V server backplane and telecom power modules.

For engineers reviewing the PSMNR67-30YLE datasheet, PSMNR67-30YLE pinout, PSMNR67-30YLE application, or PSMNR67-30YLE equivalent, this device is selected for high-current, high-SOA load switching where thermal stability in linear mode, low conduction loss, and avalanche ruggedness (4.9 J unclamped) are critical design requirements.

Technical Context

This ASFET employs a trench-gate MOSFET structure optimized for stable operation in the linear region, with SOA curves validated up to 10 ms pulse width and T_mb = 125 °C. Its gate threshold voltage (1.2–2.2 V) and low ΔV_GS(th)/ΔT (−3.9 mV/K) ensure predictable turn-on across temperature.

The LFPAK56E package integrates a direct-mounting base connected to drain, enabling junction-to-mounting-base thermal resistance as low as 0.34 K/W and supporting >333 W total power dissipation at T_mb = 25 °C-critical for sustained hot-swap event handling without thermal runaway.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum - defines absolute upper limit for drain-source blocking in 12–20 V hot-swap rails.
R_DS(on)	0.64 mΩ typ. at V_GS = 10 V, T_j = 25 °C - enables <10 mW conduction loss at 40 A, minimizing self-heating during steady-state load switching.
I_D cont.	365 A at T_mb = 25 °C - verified continuous current capability under ideal board-mount cooling, limited in practice by PCB copper area and thermal interface.
E_AS	4.9 J unclamped avalanche energy - provides single-pulse robustness against inductive kickback during fast load disconnection in e-Fuse applications.
R_th(j-mb)	0.34 K/W typ. - enables rapid heat transfer from die to heatsink or PCB plane, sustaining high-power linear-mode operation without exceeding 175 °C junction limit.
Q_G(tot)	52 nC typ. at V_GS = 10 V - determines gate drive energy requirement for <100 ns switching transitions in high-frequency load switch control loops.
V_GS(th)	1.79 V typ. - ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers while maintaining noise immunity.

Pinout & Package

LFPAK56E (SOT1023) is a 4-lead, single-ended surface-mount package with exposed mounting base (drain-connected), optimized for high-current density and low-inductance layout. Dimensions: 4.95 × 3.7 mm footprint, 1.27 mm lead pitch, 0.3 mm nominal thickness.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt hot-swap events.
4	Gate	Single gate input with 3.6 Ω typical gate resistance - balances switching speed and gate oscillation damping without external series resistor.
Mounting Base	Drain	Exposed copper pad electrically and thermally connected to drain - serves as primary current path and thermal interface to PCB heatsink.

Key Features

Feature	Design Value
Enhanced SOA	Validated linear-mode operation up to 10 ms at 24 V/100 A - enables controlled inrush limiting without thermal failure in 12 V server PSUs.
Copper-clip interconnect	Reduces package inductance to <1.5 nH and resistance to <0.25 mΩ - minimizes voltage overshoot during 2000 A/ms turn-off transients.
Low leakage	<1 µA I_DSS at 24 V, 25 °C - ensures minimal standby power loss in always-on battery protection circuits.
175 °C qualified	Full characterization and reliability testing up to T_j = 175 °C - supports operation in sealed industrial enclosures with limited airflow.
Soft-recovery diode	S = 0.94 - reduces EMI and voltage spikes during reverse recovery in bidirectional load-switch configurations.

Applications

Hot-Swap Power Insertion

e-Fuse Protection

Use Scenario: Controlled insertion of line cards into live 12 V or 19.2 V telecom backplanes without bus voltage droop or system reset.

IC Role / Device Role / Timing Role: High-side load switch with programmable slew-rate control via gate driver, operating in linear mode during ramp-up.

Use Value: Enables <500 ms soft-start with <±2 % bus regulation, preventing upstream supply overload and contact arcing.

Use Scenario: Replace mechanical fuses in 48 V intermediate bus converters with electronic overcurrent shutdown responding within 10 µs.

IC Role / Device Role / Timing Role: Current-sense-enabled load switch implementing fast trip using external comparator and gate driver feedback loop.

Use Value: Delivers 190 A non-repetitive avalanche current capability and 4.9 J energy absorption to survive fault clearing without destruction.

DC Load Switching

Battery Protection

Use Scenario: Remote ON/OFF control of high-current subsystems (e.g., GPU rail, fan banks) in data center rack servers.

IC Role / Device Role / Timing Role: Low-R_DS(on) high-side switch driven by isolated PWM signal, conducting up to 365 A continuously.

Use Value: Achieves <10 mW conduction loss at 50 A, reducing thermal management burden and enabling compact 2-layer PCB layouts.

Use Scenario: Secondary overvoltage/overcurrent protection in Li-ion battery packs for medical portable devices requiring UL 62368-1 compliance.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel pair (with companion P-channel or second N-channel) for bidirectional blocking and charge/discharge control.

Use Value: Leverages 0.75 mΩ R_DS(on) at V_GS = 7 V to maintain <15 mV sense voltage at 20 A, simplifying current monitoring circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-SOA N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N04LS6	40 V V_DS, 1.4 mΩ R_DS(on), PG-TSDSON-8 package, R_th(j-mb) = 0.55 K/W	Higher voltage rating but higher on-resistance and lower SOA robustness - suitable for general-purpose 12 V switching, not linear-mode hot-swap.	Select when 40 V headroom is required and peak current <150 A; avoid for sustained inrush limiting above 50 A.
Vishay SiR626DP	30 V V_DS, 0.72 mΩ R_DS(on), PowerPAK SO-8L, R_th(j-mb) = 0.42 K/W, no published SOA curve beyond 1 ms	Similar R_DS(on) but unqualified for extended linear-mode operation - lacks 10 ms SOA validation and 175 °C qualification.	Acceptable for pulsed DC switching where thermal time constants <100 ms; not recommended for hot-swap or e-Fuse with >100 ms fault duration.

Compared with BSC014N04LS6 and SiR626DP, PSMNR67-30YLE uniquely combines sub-0.7 mΩ on-resistance, 10 ms SOA validation, and 0.34 K/W thermal resistance-making it the only option among the three qualified for sustained linear-mode operation in high-reliability hot-swap systems.

Availability

PSMNR67-30YLE is available at Aetrix Electronics and suitable for hot-swap power insertion, e-Fuse protection, and high-current DC load switching requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and telecom infrastructure programs.

Supply support for PSMNR67-30YLE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-qualified components.

This device belongs to Nexperia's ASFET (Advanced Superjunction FET) product line, designed specifically for high-current, high-SOA applications including hot-swap, e-Fuse, and linear-mode load switching in telecom, server, and industrial power systems.

FAQ

What is the maximum continuous drain current for PSMNR67-30YLE under real-world PCB conditions?

The datasheet specifies 365 A at T_mb = 25 °C with ideal mounting, but practical current is constrained by PCB copper area, thermal vias, and ambient temperature. With 25.4 mm² 70 µm copper on FR4 (per Fig. 5), derating to 180–220 A at T_mb = 85 °C is typical for sustained operation without forced air.

Can PSMNR67-30YLE be used in avalanche mode for overvoltage clamping?

No-it is not rated or characterized for repetitive avalanche operation. The 4.9 J unclamped avalanche energy (EDS(AL)S) is a single-pulse stress rating for fault survival, not a design parameter for clamping. External TVS or Zener networks must be used for intentional overvoltage protection.

Is the mounting base electrically isolated from other pins?

No-the mounting base is internally connected to the drain terminal. This is confirmed in Table 2 (pinning) and Fig. 17 (package outline), where "mb" is labeled "D mounting base; connected to drain". PCB layout must isolate this pad from all other nets except the drain net and thermal plane.

What gate drive voltage is required to achieve the 0.64 mΩ R_DS(on) specification?

A minimum V_GS of 10 V is required to achieve the 0.64 mΩ typical R_DS(on) at T_j = 25 °C and I_D = 25 A. At V_GS = 7 V, R_DS(on) rises to 0.75 mΩ typ.; operation below 4.5 V is not recommended due to increased threshold dispersion and poor SOA margin.

PSMNR67-30YLEX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SOT-1023, 4-LFPAK

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 365A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 0.7mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 2mA

Gate Charge (Qg) (Max) @ Vgs:: 185 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 12417 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 333W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMNR67-30YLEX FAQ

1.How can I place an order for PSMNR67-30YLEX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMNR67-30YLEX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMNR67-30YLEX reliable?

The price and inventory of PSMNR67-30YLEX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMNR67-30YLEX is usually 5 days.

3.What payment methods are accepted for PSMNR67-30YLEX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMNR67-30YLEX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMNR67-30YLEX?

PSMNR67-30YLEX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMNR67-30YLEX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMNR67-30YLEX?

For technical support, including PSMNR67-30YLEX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMNR67-30YLEX requirements.

6.How does Aetrix verify that PSMNR67-30YLEX is sourced from the original manufacturer or authorized distributors?

All PSMNR67-30YLEX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMNR67-30YLEX meets industry standards.

7.What is the process for return or replacement of PSMNR67-30YLEX?

All PSMNR67-30YLEX units undergo pre-shipment inspection (PSI). If there is an issue with PSMNR67-30YLEX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMNR67-30YLEX part is unused and in its original packaging.

Return procedure for PSMNR67-30YLEX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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