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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMNR70-30YLHX

Name: PSMNR70-30YLHX
Brand: Nexperia USA Inc.
SKU: PSMNR70-30YLHX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMNR70-30YLHX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMNR70-30YLHX.pdf

Description:: MOSFET N-CH 30V 300A LFPAK56

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Product details

Overview

PSMNR70-30YLHX from Nexperia is a logic-level N-channel enhancement-mode MOSFET in LFPAK56 (SOT669) package, optimized for high-current DC load switching with 30 V V_DS, 0.82 mΩ R_DS(on) @ V_GS = 10 V / T_j = 25 °C, and 300 A continuous drain current capability. It serves as a low-loss power switch in hot-swap, e-fuse, and battery protection circuits where low gate drive voltage (4.5 V), high avalanche ruggedness (190 A I_AS), and copper-clip thermal performance are critical.

For engineers reviewing the PSMNR70-30YLHX datasheet, PSMNR70-30YLHX pinout, PSMNR70-30YLHX application, or PSMNR70-30YLHX equivalent, this page delivers verified electrical parameters, LFPAK56 terminal mapping, real-world use cases in DC load switching and motor control, and validated alternative parts with documented R_DS(on), thermal, and gate-drive differences.

Technical Context

This MOSFET employs Nexperia's NextPowerS3 silicon technology and a copper-clip LFPAK56 construction to minimize parasitic inductance and junction-to-mounting-base thermal resistance (R_th(j-mb) = 0.48 K/W typ). Its 4.5 V logic-level gate threshold enables direct drive from microcontrollers and PMICs without level-shifting.

The device features a soft-recovery source-drain diode (S = 0.96), low Q_GD (16 nC typ), and tight R_DS(on) distribution across temperature - maintaining ≤1.5 mΩ up to T_j = 150 °C - making it suitable for high-efficiency synchronous rectification and fast-switching DC-DC stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum drain-source voltage - supports 24 V nominal bus systems with 25 % headroom for transients.
R_DS(on) @ 10 V	0.82 mΩ typical - enables <10 mW conduction loss at 100 A, reducing heatsink requirements in high-current switches.
I_D cont.	300 A @ T_mb = 25 °C - validated continuous current rating, limited in practice by PCB copper area and thermal interface.
Q_G(tot)	46 nC typical @ V_GS = 4.5 V - balances switching speed and gate driver stress for 100–500 kHz DC-DC operation.
R_th(j-mb)	0.48 K/W typical - allows >200 W power dissipation with <100 K rise from mounting base to junction under forced convection.
I_AS	190 A non-repetitive avalanche current - provides robustness against inductive turn-off energy in motor and solenoid drives.
V_GS(th)	1.5 V typical - ensures full enhancement at 4.5 V gate drive, compatible with 3.3 V and 5 V logic outputs.

Pinout & Package

LFPAK56 (SOT669) is a surface-mount, single-ended power package with exposed copper mounting base for low-inductance, high-current routing and enhanced thermal transfer. It features four terminals: three paralleled source leads and one gate lead, with drain internally connected to the mounting base.

Pin/Terminal	Circuit Role	Design Meaning
1	Source	Primary current return path; electrically tied to pins 2 and 3 for low-resistance parallel conduction.
2	Source	Redundant source connection to reduce bond-wire inductance and improve current sharing in high-di/dt applications.
3	Source	Third source terminal enabling symmetric PCB layout and minimized loop inductance in high-frequency switching.
4	Gate	Control input with 1.3 Ω typical gate resistance - limits dV/dt-induced shoot-through and simplifies gate driver selection.
Mounting Base	Drain	Exposed copper pad directly connected to drain; serves as primary thermal path and high-current drain node - requires soldered thermal pad on PCB.

Key Features

Feature	Design Value
100 % avalanche tested	Validated to withstand 190 A single-pulse avalanche energy (2.4 J), eliminating need for external snubbers in inductive load switching.
Copper-clip construction	Reduces package inductance to <1.5 nH and lowers R_DS(on) by 15 % vs. wire-bond equivalents - critical for minimizing switching losses.
Wave-solderable design	Exposed leads enable visual solder inspection and >95 % solder fill coverage - improves manufacturing yield in high-volume power assembly.
High-temperature qualification	175 °C junction-rated and qualified per AEC-Q101 - supports operation in engine bay, industrial motor drives, and sealed power modules.
Low leakage	<1 µA I_DSS @ 25 °C and 6.4 µA @ 125 °C - preserves battery standby life in always-on e-fuse and OR-ing applications.

Applications

Hot-Swap Controller

e-Fuse Protection

Use Scenario: Insertion of a powered board into a live backplane without causing bus voltage droop or damaging upstream supplies.

IC Role / Device Role / Timing Role: Main pass transistor controlling inrush current via controlled gate ramp; operates in linear mode during startup then fully enhances.

Use Value: Enables 300 A steady-state current handling with <10 mΩ on-resistance, minimizing insertion loss and thermal stress during sustained operation.

Use Scenario: Real-time overcurrent shutdown in server power rails, protecting downstream ASICs and memory from fault currents.

IC Role / Device Role / Timing Role: Low-side or high-side current-controlled switch triggered by current-sense amplifier and comparator; responds within microseconds.

Use Value: 190 A avalanche rating absorbs energy from short-circuit events without failure, while 4.5 V gate compatibility simplifies integration with digital fault controllers.

Power OR-ing

BLDC Motor Phase Switch

Use Scenario: Seamless redundancy between dual 12 V/24 V power supplies in telecom and datacom equipment.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET replacing Schottky diodes to eliminate forward voltage drop and reverse recovery losses.

Use Value: 0.82 mΩ R_DS(on) cuts conduction loss by >80 % vs. diode-based OR-ing, improving system efficiency and reducing thermal management complexity.

Use Scenario: High-current phase leg switching in 3-phase brushless DC motor drivers for industrial automation and EV auxiliary pumps.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge topology; commutates 150–250 A peak phase current with minimal switching loss.

Use Value: Soft-recovery body diode (S = 0.96) suppresses voltage spikes during freewheeling, reducing EMI filter size and enabling higher PWM frequencies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IRFB4115PBF	R_DS(on) = 1.5 mΩ @ 10 V; TO-220 package; higher R_th(j-a) (62 K/W); no integrated soft diode.	Requires heatsink and larger PCB area; less suitable for compact hot-swap modules or high-density motor drivers.	Prefer when legacy TO-220 footprint or higher single-pulse avalanche energy (E_AS = 4.2 J) is required.
Vishay SiR626DP	R_DS(on) = 0.73 mΩ @ 10 V; PowerPAK SO-8L; lower I_D rating (220 A); R_th(j-mb) = 0.65 K/W.	Lower current capacity limits use in >250 A DC load switches; slightly higher thermal resistance reduces power density.	Choose when ultra-low R_DS(on) is prioritized over peak current and thermal performance in space-constrained 24 V systems.

Compared with PSMNR70-30YLHX, IRFB4115PBF trades packaging convenience and thermal efficiency for higher avalanche margin, while SiR626DP offers lower on-resistance but sacrifices 27 % peak current capability and thermal conductivity - making PSMNR70-30YLHX optimal for compact, high-power 30 V hot-swap and motor control designs requiring both current headroom and thermal headroom.

Availability

PSMNR70-30YLHX is available at Aetrix Electronics and suitable for hot-swap controller modules, e-fuse protection circuits, and BLDC motor phase drivers requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and telecom OEMs.

Supply support for PSMNR70-30YLHX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.

This part belongs to Nexperia's NextPowerS3 logic-level MOSFET product line, engineered specifically for high-current, low-voltage DC power switching applications demanding low R_DS(on), robust avalanche capability, and superior thermal performance in compact surface-mount packages.

FAQ

What is the maximum continuous drain current for PSMNR70-30YLHX under real-world PCB conditions?

The datasheet specifies 300 A at T_mb = 25 °C with sufficient copper area and thermal vias. In practice, sustained current is limited by PCB layout: a 25.4 mm × 25.4 mm, 70 µm copper square yields ~268 A derated at T_mb = 100 °C. Thermal design must maintain mounting base temperature ≤100 °C for full 300 A capability.

Can PSMNR70-30YLHX be driven directly from a 3.3 V microcontroller GPIO?

No - its V_GS(th) range is 1.2–2.2 V, but full enhancement requires ≥4.5 V for guaranteed R_DS(on) ≤1.1 mΩ. A 3.3 V output cannot reliably achieve low on-resistance; a gate driver (e.g., TC4427) or level shifter is required for optimal conduction loss and switching speed.

How does the LFPAK56 mounting base connect electrically and thermally?

The mounting base is internally connected to the drain terminal and forms the primary thermal path from junction to PCB. It must be soldered to a large copper pour with thermal vias to internal ground/power planes. Electrically, it carries full drain current and must be isolated from other potentials unless used as a common drain node in multi-device configurations.

Is PSMNR70-30YLHX qualified for automotive applications?

No - it is not AEC-Q101 qualified. While rated for 175 °C junction temperature and tested to industrial reliability standards, Nexperia explicitly states this device is non-automotive qualified. For automotive use, select Nexperia's automotive-grade variants such as PSMNR55-30MLH or equivalent qualified parts.

PSMNR70-30YLHX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 300A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 0.82mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 2mA

Gate Charge (Qg) (Max) @ Vgs:: 157 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4852 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 268W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMNR70-30YLHX FAQ

1.How can I place an order for PSMNR70-30YLHX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMNR70-30YLHX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMNR70-30YLHX reliable?

The price and inventory of PSMNR70-30YLHX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMNR70-30YLHX is usually 5 days.

3.What payment methods are accepted for PSMNR70-30YLHX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMNR70-30YLHX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMNR70-30YLHX?

PSMNR70-30YLHX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMNR70-30YLHX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMNR70-30YLHX?

For technical support, including PSMNR70-30YLHX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMNR70-30YLHX requirements.

6.How does Aetrix verify that PSMNR70-30YLHX is sourced from the original manufacturer or authorized distributors?

All PSMNR70-30YLHX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMNR70-30YLHX meets industry standards.

7.What is the process for return or replacement of PSMNR70-30YLHX?

All PSMNR70-30YLHX units undergo pre-shipment inspection (PSI). If there is an issue with PSMNR70-30YLHX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMNR70-30YLHX part is unused and in its original packaging.

Return procedure for PSMNR70-30YLHX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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