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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMNR82-30YLEX

Name: PSMNR82-30YLEX
Brand: Nexperia USA Inc.
SKU: PSMNR82-30YLEX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMNR82-30YLEX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMNR82-30YLEX.pdf

Description:: PSMNR82-30YLE/SOT669/LFPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PSMNR82-30YLE from Nexperia is an N-channel 30 V ASFET in LFPAK56 (SOT669) package, optimized for hot-swap, inrush current control, and linear-mode operation with 0.87 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, 330 A continuous drain current capability, and enhanced Safe Operating Area (SOA) up to 175 °C junction temperature - deployed in 12–20 V server backplane hot-swap circuits.

For engineers reviewing the PSMNR82-30YLE datasheet, PSMNR82-30YLE pinout, PSMNR82-30YLE application, or PSMNR82-30YLE equivalent, key selection criteria include SOA robustness in linear mode, low R_DS(on) at high current, thermal resistance to mounting base (0.42 K/W), gate charge profile for fast switching control, and LFPAK56 package reliability under repetitive surge stress.

Technical Context

This device employs a copper-clip LFPAK56E construction enabling ultra-low parasitic inductance and resistance, critical for minimizing voltage overshoot during hot-swap transients. Its SOA is fully characterized up to 10 ms pulse width and validated for unclamped avalanche energy of 2.7 J at 25 °C initial junction temperature.

The gate threshold voltage is tightly specified at 1.2–2.2 V (T_j = 25 °C), with negative temperature coefficient (−3.7 mV/K), supporting stable biasing across wide thermal ranges. Diode softness factor of 1.03 ensures controlled reverse recovery in load-switch and e-fuse configurations where body diode conduction occurs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum - supports 12–20 V hot-swap rails with 50 % margin against transient overvoltage
R_DS(on)	0.87 mΩ typ at V_GS = 10 V, T_j = 25 °C - enables <10 mW conduction loss at 30 A, reducing thermal footprint
I_D cont.	330 A at T_mb = 25 °C - validated in application testing; limited by PCB copper area and thermal design in practice
R_th(j-mb)	0.42 K/W typ - allows >200 W power dissipation before reaching 175 °C junction limit when mounted on 25.4 mm² copper pad
Q_G(tot)	41 nC typ at V_GS = 10 V - supports fast turn-on with moderate gate driver strength (e.g., 2 A peak)
E_AS	2.7 J non-repetitive avalanche energy - provides single-event robustness against inductive kickback in DC switch applications
V_GS(th)	1.79 V typ - ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V logic-level gate drive

Pinout & Package

LFPAK56 (SOT669) is a 4-terminal surface-mount copper-clip package with exposed mounting base connected to drain, delivering low thermal resistance (0.42 K/W) and high-current capability in a compact 30 mm² footprint.

Pin/Terminal	Circuit Role	Design Meaning
1	Source	Low-inductance source connection; tied internally to pins 2 and 3 for parallel current handling
2	Source	Redundant source terminal - reduces source loop inductance and improves SOA stability in linear mode
3	Source	Third source terminal - enables symmetric PCB layout for balanced current sharing and thermal distribution
4	Gate	Control input with 3.2 Ω typical gate resistance - compatible with standard MOSFET drivers without external gate resistor
Mounting Base	Drain	Exposed copper pad electrically and thermally connected to drain - serves as primary heat path and high-current drain node

Key Features

Feature	Design Value
Fully optimized SOA	Characterized for linear-mode operation up to 10 ms pulses - enables reliable current limiting in e-fuse and hot-swap ICs without derating
LFPAK56E copper-clip construction	Reduces parasitic inductance and resistance vs. wire-bonded packages - suppresses voltage spikes during fast turn-off in 330 A switching events
Low leakage	<1 µA I_DSS at 25 °C - minimizes standby power loss in always-on load switch applications
High-reliability qualification	175 °C junction-rated - supports operation in sealed industrial enclosures with minimal forced cooling
Soft reverse recovery	S = 1.03 - limits di/dt-induced voltage overshoot during body-diode commutation in bidirectional load switches

Applications

Hot Swap in 12–20 V Systems

e-Fuse Protection

Use Scenario: Insertion of PCIe cards or modular PSUs into live backplanes without disrupting upstream power rail.

IC Role / Device Role / Timing Role: Main pass FET in discrete hot-swap controller circuit, operating in linear mode during inrush limiting and transitioning to saturation during steady-state conduction.

Use Value: 0.87 mΩ R_DS(on) and 330 A rating enable <10 mV drop at 10 A, preserving voltage margin while sustaining >200 W delivery per rail.

Use Scenario: Overcurrent protection for 12 V intermediate bus in telecom shelf systems with programmable trip thresholds.

IC Role / Device Role / Timing Role: Current-sense FET in analog e-fuse IC feedback loop, requiring precise SOA linearity and repeatable thermal response.

Use Value: Fully characterized SOA up to 10 ms ensures accurate current limiting without thermal runaway during sustained fault conditions.

DC Load Switch

Battery Protection

Use Scenario: High-current power gating for GPU VRMs or FPGA auxiliary rails in AI accelerators.

IC Role / Device Role / Timing Role: Low-loss main switch controlling power delivery path, driven by dedicated load switch controller with slew-rate control.

Use Value: 0.42 K/W R_th(j-mb) allows direct mounting to heatsink or copper plane - sustains 150 A continuous with <40 °C rise above ambient.

Use Scenario: Primary protection FET in 3-cell Li-ion battery packs for portable medical devices requiring UL 2580 compliance.

IC Role / Device Role / Timing Role: Bidirectional blocking FET in battery management system (BMS), conducting in forward direction and blocking reverse during cell balancing.

Use Value: Soft-recovery body diode (S = 1.03) prevents voltage overshoot during cell reversal, protecting sensitive analog front-end ICs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel hot-swap MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PSMN3R5-30YL	R_DS(on) = 3.5 mΩ (typ), 100 A I_D, same LFPAK56 package	Lower current rating and higher on-resistance - suitable only for sub-50 A hot-swap rails	Select when board space is constrained but thermal budget allows higher conduction loss.
IPB017N10N5	100 V V_DS, 1.7 mΩ R_DS(on), TO-263 package	Higher voltage rating and larger thermal mass - requires different PCB layout and heatsinking strategy	Choose only if system must support >30 V transients or legacy TO-263 footprint compatibility is mandatory.

Compared with PSMN3R5-30YL, PSMNR82-30YLE delivers 3.3× lower R_DS(on) and 3.3× higher current capability in identical footprint - enabling scalable hot-swap designs from 50 A to 330 A without layout change. Versus IPB017N10N5, it trades voltage headroom for superior thermal performance and smaller form factor in 30 V systems.

Availability

PSMNR82-30YLE is available at Aetrix Electronics and suitable for high-current hot-swap, e-fuse, DC load switch, and battery protection applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial and telecom infrastructure programs.

Supply support for PSMNR82-30YLE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-performance, high-reliability discrete and logic devices, with leadership in MOSFETs, ESD protection, and automotive-qualified components.

This device belongs to Nexperia's ASFET (Advanced Superjunction FET) product line, engineered specifically for high-efficiency, high-SOA power switching in hot-swap, inrush limiting, and linear-mode load control applications.

FAQ

What is the maximum continuous drain current rating for PSMNR82-30YLE?

The datasheet specifies 330 A continuous drain current at T_mb = 25 °C, validated in application testing. In real-world designs, this value is limited by PCB copper area, thermal interface quality, and ambient temperature - typical practical ratings range from 150 A to 250 A depending on thermal design.

Does PSMNR82-30YLE require a gate resistor for safe operation?

No external gate resistor is required for basic switching, as its typical gate resistance is 3.2 Ω and Q_G(tot) is 41 nC. However, a small series resistor (1–5 Ω) is recommended to dampen ringing during fast turn-off in high-dI/dt hot-swap applications and to control dv/dt during linear-mode transitions.

How is the mounting base connected internally?

The mounting base is electrically connected to the drain terminal and forms the primary thermal and current path. It is not isolated - PCB layout must treat it as a high-voltage, high-current node and ensure adequate creepage/clearance to adjacent traces or planes per IPC-2221 requirements.

Can PSMNR82-30YLE be used in avalanche mode repeatedly?

No - its 2.7 J non-repetitive avalanche energy rating applies only to single-event stress. The device is not rated for repetitive avalanche operation. System design must prevent repeated unclamped inductive switching via snubbers, freewheeling paths, or active clamping to avoid cumulative degradation.

PSMNR82-30YLEX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 330A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 0.87mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 2mA

Gate Charge (Qg) (Max) @ Vgs:: 149 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10131 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 268W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMNR82-30YLEX FAQ

1.How can I place an order for PSMNR82-30YLEX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMNR82-30YLEX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMNR82-30YLEX reliable?

The price and inventory of PSMNR82-30YLEX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMNR82-30YLEX is usually 5 days.

3.What payment methods are accepted for PSMNR82-30YLEX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMNR82-30YLEX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMNR82-30YLEX?

PSMNR82-30YLEX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMNR82-30YLEX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMNR82-30YLEX?

For technical support, including PSMNR82-30YLEX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMNR82-30YLEX requirements.

6.How does Aetrix verify that PSMNR82-30YLEX is sourced from the original manufacturer or authorized distributors?

All PSMNR82-30YLEX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMNR82-30YLEX meets industry standards.

7.What is the process for return or replacement of PSMNR82-30YLEX?

All PSMNR82-30YLEX units undergo pre-shipment inspection (PSI). If there is an issue with PSMNR82-30YLEX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMNR82-30YLEX part is unused and in its original packaging.

Return procedure for PSMNR82-30YLEX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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