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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMNR89-25YLEX

Name: PSMNR89-25YLEX
Brand: Nexperia USA Inc.
SKU: PSMNR89-25YLEX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMNR89-25YLEX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMNR89-25YLEX.pdf

Description:: PSMNR89-25YLE/SOT669/LFPAK

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Product details

Overview

PSMNR89-25YLE from Nexperia is an N-channel 25 V ASFET in LFPAK56 (SOT669) package, optimized for hot-swap, e-fuse, and linear-mode operation with 0.98 mΩ R_DS(on) at V_GS = 10 V, 25 A, T_j = 25 °C, 224 W power dissipation at T_mb = 25 °C, and enhanced SOA up to 175 °C junction temperature - deployed in 12–20 V server backplane hot-swap circuits.

For engineers reviewing the PSMNR89-25YLE datasheet, PSMNR89-25YLE pinout, PSMNR89-25YLE application, or PSMNR89-25YLE equivalent, key selection criteria include linear-mode SOA robustness, low R_DS(on) stability over temperature, gate charge profile for fast switching control, thermal resistance to mounting base (R_th(j-mb) = 0.4–0.67 K/W), and LFPAK56 footprint compatibility with high-current PCB layouts.

Technical Context

This device employs a trench-gate MOSFET structure with copper-clip interconnect to minimize parasitic inductance and resistance, enabling stable operation in continuous linear mode under high dV/dt and high-current inrush conditions. Its SOA curve is fully characterized up to 1359 A peak drain current (tp ≤ 10 µs) and supports unclamped avalanche energy of 2.1 J at T_j(init) = 25 °C.

The gate threshold voltage (V_GS(th) = 1.2–2.2 V) and negative temperature coefficient (−3.8 mV/K) ensure predictable turn-on behavior across −55 to +175 °C, while soft reverse recovery (S = 1) and low Q_GD (1.8–20 nC) reduce switching-induced voltage overshoot during load dump or hot-plug events.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum drain-source blocking voltage; defines safe operating range in 12–20 V hot-swap rails.
R_DS(on)	0.98 mΩ @ V_GS = 10 V, I_D = 25 A, T_j = 25 °C - Enables <1 W conduction loss at 100 A, critical for low-temperature-rise e-fuse designs.
I_D (cont)	270 A @ T_mb = 25 °C - Demonstrated continuous current; limited in practice by PCB copper area and thermal interface design.
R_th(j-mb)	0.4–0.67 K/W - Low junction-to-mounting-base thermal resistance enables direct heatsink attachment without thermal vias.
Q_G(tot)	33 nC typ @ V_GS = 4.5 V - Supports fast, low-loss gate driving with standard 5 V logic-level controllers.
SOA (linear)	Characterized to 100 ms at 25 V/100 A - Enables reliable operation during sustained inrush or fault current limiting without thermal runaway.
V_GS(th)	1.96 V typ - Ensures robust turn-on margin above noise floor in noisy hot-swap environments.
Q_GD	10 nC typ - Limits Miller-induced shoot-through risk during hard-switching in DC switch applications.

Pinout & Package

LFPAK56 (SOT669) is a 4-terminal, single-ended surface-mount package with exposed copper mounting base connected to drain, delivering high thermal and electrical performance in a 30 mm² footprint. It features copper-clip construction for low parasitic inductance and resistance, qualified to 175 °C junction temperature.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt hot-swap transients.
4	Gate (G)	Single gate input with low RG (1.2–7.7 Ω) for precise timing control and minimal gate drive power.
Mounting Base (mb)	Drain (D)	Exposed copper drain pad provides primary thermal path to heatsink/PCB and carries full load current - no separate drain pin required.

Key Features

Feature	Design Value
Fully characterized SOA	Validated linear-mode operation up to 100 ms at 25 V/100 A - eliminates need for external SOA derating calculations in e-fuse IC replacement designs.
Low R_DS(on) drift	R_DS(on) increases only 1.1× from 25 °C to 150 °C - maintains tight current-limit accuracy across industrial temperature range.
Copper-clip construction	Reduces package inductance to <1.5 nH and resistance to <0.3 mΩ - suppresses voltage spikes during 1000 A/µs inrush events.
Soft-recovery diode	S = 1 - Minimizes voltage ringing and EMI during reverse recovery in bidirectional load-switch configurations.
High-reliability qualification	Qualified to 175 °C junction temperature per AEC-Q101 - supports extended lifetime in thermally constrained server and telecom modules.

Applications

Hot-Swap Controller Replacement

e-Fuse Protection Circuit

Use Scenario: Replacing integrated hot-swap controllers in 12 V server midplanes where higher current (>100 A) and better thermal headroom are required.

IC Role / Device Role / Timing Role: Standalone N-channel power switch controlled by external current-sense amplifier and comparator; operates in linear mode during insertion surge.

Use Value: Eliminates controller IC cost and complexity while delivering 270 A continuous rating and 2.1 J avalanche ruggedness - reduces BOM count and improves fault tolerance.

Use Scenario: High-current electronic fuse in 20 V battery backup systems protecting against short-circuit faults up to 1359 A peak.

IC Role / Device Role / Timing Role: Primary current-limiting element in analog e-fuse loop; gate driven by op-amp-based current mirror with programmable trip threshold.

Use Value: 0.98 mΩ R_DS(on) limits power loss to <1 W at 100 A, enabling compact thermal design; SOA curve allows precise time-current coordination without external snubbers.

DC Load Switch

Battery Protection Switch

Use Scenario: High-efficiency 12 V DC distribution switch in industrial PLC backplanes requiring >200 A steady-state current and fast turn-off (<100 ns).

IC Role / Device Role / Timing Role: Main power path switch controlled by microcontroller GPIO via dedicated gate driver; handles both steady-state and transient loads.

Use Value: Low Q_G(tot) (33 nC) and fast switching (t_f = 36 ns) enable <1 µs turn-off - prevents latch-up during brown-out or watchdog timeout events.

Use Scenario: Bidirectional battery protection switch in 16 V LiFePO₄ storage systems, managing charge/discharge paths and reverse-current blocking.

IC Role / Device Role / Timing Role: Back-to-back configured pair (one device per direction) with shared gate drive; leverages intrinsic body diode for reverse conduction.

Use Value: Soft-recovery (S = 1) and low V_SD (0.78 V typ) minimize reverse-conduction losses and EMI during battery reversal or cell balancing transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel hot-swap MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PSMN3R5-25YLH	R_DS(on) = 3.5 mΩ @ 10 V - 3.6× higher than PSMNR89-25YLE; lower ID (120 A) and Ptot (104 W).	Suitable for lower-current hot-swap (≤60 A); less demanding thermal design due to smaller die.	Select when board space or cost constraints outweigh need for ultra-low R_DS(on) and high SOA.
IPB017N10N5	100 V rating, R_DS(on) = 1.7 mΩ @ 10 V - higher voltage headroom but 1.7× higher on-resistance and larger TO-263 package.	Used in 48 V telecom systems; requires larger PCB footprint and heatsinking vs. LFPAK56.	Select only if 100 V blocking is mandatory; otherwise PSMNR89-25YLE offers superior 25 V optimization and thermal density.

Compared with PSMN3R5-25YLH and IPB017N10N5, PSMNR89-25YLE delivers the lowest R_DS(on) and highest current density in LFPAK56, making it optimal for space-constrained 12–20 V hot-swap and e-fuse designs where linear-mode SOA and thermal efficiency are critical.

Availability

PSMNR89-25YLE is available at Aetrix Electronics and suitable for hot-swap controller replacement, e-fuse protection circuits, DC load switching, and battery protection applications requiring stable component supply, high-reliability qualification, and consistent LFPAK56 packaging.

Supply support for PSMNR89-25YLE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential system functionality, delivering high-performance discrete, logic, and MOSFET solutions with emphasis on reliability, efficiency, and manufacturability.

This part belongs to Nexperia's ASFET (Advanced Superjunction FET) product line, engineered specifically for high-current, high-reliability hot-swap, e-fuse, and linear-mode power switching applications in datacom, telecom, and industrial power systems.

FAQ

What is the maximum continuous drain current for PSMNR89-25YLE under real-world PCB conditions?

The datasheet specifies 270 A at T_mb = 25 °C, but practical continuous current is limited by PCB copper area, thermal interface resistance, and ambient temperature. With a 25.4 mm square 70 µm FR4 copper pad (per Fig. 5), sustained current typically reaches 120–150 A before reaching 100 °C mounting base temperature - verified via thermal simulation and application testing.

Does PSMNR89-25YLE require a gate resistor for hot-swap linear-mode operation?

Yes - a 1–5 Ω gate resistor is recommended to dampen gate oscillation and control dI/dt during linear-mode transitions. The device's low gate resistance (1.2–7.7 Ω) and 33 nC total gate charge make it sensitive to ringing; external resistance ensures stable, non-oscillatory turn-on during inrush limiting and avoids unintended thermal runaway.

Can PSMNR89-25YLE be used in bidirectional current paths without external diodes?

No - while its intrinsic body diode supports unidirectional reverse conduction (V_SD = 0.78 V typ), it is not rated for bidirectional blocking. For true bidirectional protection, two devices must be connected in back-to-back configuration with gates tied together, leveraging their matched SOA and soft recovery to handle reverse current without snap-off.

How does the LFPAK56 package improve thermal performance versus traditional D2PAK?

LFPAK56 reduces R_th(j-mb) to 0.4–0.67 K/W versus ~1.0 K/W for D2PAK, due to copper-clip construction eliminating bond wires and direct metal-to-metal mounting base contact. This yields ~40% lower junction temperature rise at 100 A, enabling smaller heatsinks or higher ambient operation - validated per JEDEC JESD51-14 and Fig. 4 transient impedance curves.

PSMNR89-25YLEX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 270A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 0.98mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 2mA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7452 pF @ 12 V

FET Feature:: -

Power Dissipation (Max):: 224W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMNR89-25YLEX FAQ

1.How can I place an order for PSMNR89-25YLEX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMNR89-25YLEX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMNR89-25YLEX reliable?

The price and inventory of PSMNR89-25YLEX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMNR89-25YLEX is usually 5 days.

3.What payment methods are accepted for PSMNR89-25YLEX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMNR89-25YLEX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMNR89-25YLEX?

PSMNR89-25YLEX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMNR89-25YLEX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMNR89-25YLEX?

For technical support, including PSMNR89-25YLEX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMNR89-25YLEX requirements.

6.How does Aetrix verify that PSMNR89-25YLEX is sourced from the original manufacturer or authorized distributors?

All PSMNR89-25YLEX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMNR89-25YLEX meets industry standards.

7.What is the process for return or replacement of PSMNR89-25YLEX?

All PSMNR89-25YLEX units undergo pre-shipment inspection (PSI). If there is an issue with PSMNR89-25YLEX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMNR89-25YLEX part is unused and in its original packaging.

Return procedure for PSMNR89-25YLEX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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