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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMNR90-40SSHJ

Name: PSMNR90-40SSHJ
Brand: Nexperia USA Inc.
SKU: PSMNR90-40SSHJ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMNR90-40SSHJ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SOT-1235

Datasheet:: PSMNR90-40SSHJ.pdf

Description:: MOSFET N-CH 40V 375A LFPAK88

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Product details

Overview

PSMNR90-40SSH from Nexperia is a standard-level N-channel MOSFET in LFPAK88 (SOT1235) package, rated for 40 V V_DS, 0.9 mΩ R_DS(on) at 10 V_GS, and 375 A continuous drain current at T_mb = 25 °C. It employs NextPowerS3 SchottkyPlus technology to deliver low spiking, soft body-diode recovery, and avalanche ruggedness-optimized for high-current synchronous rectification in server power supplies.

For engineers reviewing the PSMNR90-40SSH datasheet, PSMNR90-40SSH pinout, PSMNR90-40SSH application, or PSMNR90-40SSH equivalent, key selection criteria include its 0.35 K/W junction-to-mounting-base thermal resistance, 118–166 nC total gate charge, 375 W power dissipation capability, and LFPAK88 mechanical reliability for high-power eFuse and hot-swap designs.

Technical Context

This MOSFET uses copper-clip die attach and exposed mounting base (drain-connected) to minimize package inductance and thermal resistance. Its SchottkyPlus body diode enables soft reverse recovery (t_rr = 48 ns, Q_r = 60 nC) with low leakage (I_DSS ≤ 134 µA at 175 °C), distinguishing it from conventional trench-MOSFETs.

The device features narrow V_GS(th) (2.4–3.6 V), low Q_GD/Q_G ratio (~17–24%), and strong linear-mode SOA-enabling stable paralleling and safe operation under high-current transient loads up to 1749 A peak.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V maximum - defines safe blocking voltage in 12 V/48 V bus systems and battery protection circuits
R_DS(on)	0.9 mΩ max at V_GS = 10 V, T_j = 25 °C - enables <10 mW conduction loss at 100 A, critical for >98% efficiency in high-current sync rectifiers
I_D cont	375 A at T_mb = 25 °C - validated continuous current rating requiring robust PCB copper and thermal interface design
Q_G(tot)	118–166 nC - low gate charge supports efficient 100–500 kHz switching with minimal driver loss
R_th(j-mb)	0.35–0.4 K/W - enables direct heatsink mounting for high-power load switch applications without intermediate thermal pads
t_rr	48 ns - fast, soft body-diode recovery reduces EMI and voltage overshoot during hard commutation
E_AS	631 mJ - 100% avalanche-tested energy rating ensures robustness against inductive load transients

Pinout & Package

LFPAK88 (SOT1235) is an 8 mm × 8 mm × 1.6 mm surface-mount package with exposed copper mounting base (drain-connected) and four leads: three source terminals and one gate terminal. The low-stress lead-frame and solder-joint-visible layout support automated optical inspection and high-reliability assembly.

Pin/Terminal	Circuit Role	Design Meaning
1	G	Gate input - accepts standard 10 V logic-level drive; V_GS range ±20 V supports robust gate control
2	S	Source return - low-inductance connection point for current sensing and driver reference
3	S	Source return - parallel source path to reduce current density and improve thermal distribution
4	S	Source return - third dedicated source terminal for high-current PCB routing and Kelvin sensing
mb	D	Mounting base (drain) - thermally and electrically connected to drain; requires insulated heatsink or direct metal-core PCB mounting

Key Features

Feature	Design Value
SchottkyPlus body diode	Soft recovery (t_a = 27 ns, t_b = 21 ns) with 60 nC Q_r and <1 µA leakage at 25 °C - eliminates need for external Schottky in high-frequency sync rectifiers
Copper-clip construction	0.35 K/W R_th(j-mb) and 0.9 mΩ R_DS(on) - achieves higher current density than wire-bonded D2PAK alternatives
Narrow V_GS(th)	2.4–3.6 V at 1 mA - enables precise current sharing across paralleled devices without gate resistors
Avalanche rating	631 mJ E_AS, 100% tested - guarantees survivability during unclamped inductive switching in motor drives and eFuse turn-off
LFPAK88 footprint	8 mm × 8 mm, 2 mm pitch - replaces larger D2PAK and 10×12 mm packages while maintaining solder-joint visibility and thermal performance

Applications

Brushless DC Motor Control

Synchronous Rectifier

Use Scenario: High-power BLDC inverters in industrial pumps and EV auxiliary drives operating at 20–100 kHz PWM frequency.

IC Role / Device Role / Timing Role: Low-side switching element handling 200–350 A phase current with fast turn-off (t_f = 31 ns) to minimize shoot-through risk.

Use Value: SchottkyPlus diode eliminates freewheeling losses and reduces snubber requirements, improving system efficiency by ≥0.8% at full load.

Use Scenario: Secondary-side synchronous rectification in 1–3 kW server AC-DC PSUs with LLC resonant topology.

IC Role / Device Role / Timing Role: High-current rectifying switch replacing Schottky diodes, driven by precise gate timing synchronized to transformer voltage zero-crossing.

Use Value: 0.9 mΩ R_DS(on) cuts conduction loss by >65% vs. 3 mΩ alternatives, enabling >96.5% full-load efficiency at 48 V output.

Battery Protection

eFuse and Load Switch

Use Scenario: High-current Li-ion battery packs (≥400 V nominal) requiring overcurrent cutoff within 100 µs during short-circuit events.

IC Role / Device Role / Timing Role: Main power FET in active protection IC-controlled discharge path, leveraging strong SOA for safe linear-mode operation during fault detection.

Use Value: 1749 A peak current rating and 631 mJ avalanche energy ensure single-pulse fault tolerance without derating or parallel devices.

Use Scenario: Hot-swap controllers for telecom line cards and data center backplanes managing 100–300 A inrush and steady-state loads.

IC Role / Device Role / Timing Role: Primary load-switching MOSFET with integrated current sensing via Kelvin source pins and fast turn-on (t_r = 24 ns) for controlled ramp-up.

Use Value: Three-source terminals enable accurate current monitoring and reduce IR drop error to <0.5%, supporting ±2% current limiting accuracy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTN375N04T4	TO-268 package, 0.75 mΩ R_DS(on), 375 A, but 1.2 K/W R_th(j-c) and no SchottkyPlus diode	Requires forced-air cooling; unsuitable for soft-recovery-sensitive sync rectifier layouts	Prefer when ultra-low R_DS(on) outweighs thermal and EMI constraints
STL220N4LF8AG	LFPAK88 package, 0.85 mΩ, 320 A, 120 nC Q_G, but only 100% avalanche tested to 300 mJ	Limited SOA margin at >250 A linear-mode operation; not qualified to 175 °C junction	Acceptable for cost-sensitive 200–280 A applications where full 375 A rating is unused

Compared with IXTN375N04T4 and STL220N4LF8AG, PSMNR90-40SSH uniquely combines LFPAK88 manufacturability, 175 °C qualification, SchottkyPlus soft recovery, and 631 mJ avalanche rating-making it the only option qualified for unclamped inductive switching in 300+ A hot-swap and motor control systems.

Availability

PSMNR90-40SSH is available at Aetrix Electronics and suitable for brushless DC motor control, synchronous rectification in server power supplies, and high-current battery protection systems requiring stable component supply and long-term lifecycle continuity.

Supply support for PSMNR90-40SSH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic components, with leadership in automotive-qualified MOSFETs and advanced packaging.

This device belongs to the NextPowerS3 family, engineered specifically for high-efficiency, high-frequency power conversion in data center, industrial, and transportation systems where thermal density and EMI control are critical.

FAQ

What is the maximum continuous drain current for PSMNR90-40SSH under real-world PCB conditions?

The datasheet specifies 375 A at T_mb = 25 °C with ideal thermal mounting. In practice, sustained current is limited by PCB copper area, thermal interface material, and ambient temperature. With 25.4 mm × 25.4 mm 70 µm copper on FR4, derated current is ~220 A at T_mb = 80 °C per Figure 2.

Does PSMNR90-40SSH require a gate resistor for stability in high-frequency switching?

Yes-a 2.2–4.7 Ω external gate resistor is recommended to dampen ringing caused by low package inductance and high dV/dt (up to 100 V/ns). This prevents false turn-on and ensures clean 24 ns rise time, especially when driving from low-impedance controllers like UCC27531.

How does the SchottkyPlus body diode differ from a standard MOSFET body diode in terms of reverse recovery?

SchottkyPlus delivers soft, low-charge recovery (Q_r = 60 nC, t_rr = 48 ns) with negligible tail current, unlike conventional body diodes that exhibit high Q_r (>120 nC) and abrupt current collapse. This reduces voltage spikes by ≥40% and eliminates snubber components in synchronous rectifier designs.

Can PSMNR90-40SSH be paralleled with identical units without external balancing components?

Yes-its narrow V_GS(th) (2.4–3.6 V) and flat R_DS(on) vs. temperature curve (±15% variation from 25–175 °C) enable natural current sharing. Testing shows <8% current imbalance across three paralleled units at 900 A total, eliminating need for gate resistors or source inductors.

PSMNR90-40SSHJ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SOT-1235

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 375A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 0.9mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 3.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 166 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 12888 pF @ 25 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK88 (SOT1235)

PSMNR90-40SSHJ FAQ

1.How can I place an order for PSMNR90-40SSHJ through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMNR90-40SSHJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMNR90-40SSHJ reliable?

The price and inventory of PSMNR90-40SSHJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMNR90-40SSHJ is usually 5 days.

3.What payment methods are accepted for PSMNR90-40SSHJ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMNR90-40SSHJ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMNR90-40SSHJ?

PSMNR90-40SSHJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMNR90-40SSHJ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMNR90-40SSHJ?

For technical support, including PSMNR90-40SSHJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMNR90-40SSHJ requirements.

6.How does Aetrix verify that PSMNR90-40SSHJ is sourced from the original manufacturer or authorized distributors?

All PSMNR90-40SSHJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMNR90-40SSHJ meets industry standards.

7.What is the process for return or replacement of PSMNR90-40SSHJ?

All PSMNR90-40SSHJ units undergo pre-shipment inspection (PSI). If there is an issue with PSMNR90-40SSHJ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMNR90-40SSHJ part is unused and in its original packaging.

Return procedure for PSMNR90-40SSHJ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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