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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMNR90-40YLHX

Name: PSMNR90-40YLHX
Brand: Nexperia USA Inc.
SKU: PSMNR90-40YLHX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMNR90-40YLHX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SOT-1023, 4-LFPAK

Datasheet:: PSMNR90-40YLHX.pdf

Description:: MOSFET N-CH 40V 300A LFPAK56

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Product details

Overview

PSMNR90-40YLHX from Nexperia is a logic-level N-channel enhancement-mode MOSFET in LFPAK56E (SOT1023) package, rated for 40 V V_DS, 0.94 mΩ R_DS(on) at V_GS = 10 V and 25 A, 300 A continuous drain current at T_mb = 25 °C, and 175 °C junction operation-designed for high-efficiency synchronous rectification and server power supply switching stages.

For engineers reviewing the PSMNR90-40YLHX datasheet, PSMNR90-40YLHX pinout, PSMNR90-40YLHX application, or PSMNR90-40YLHX equivalent, key selection criteria include low Q_G/Q_GD for EMI-sensitive DC-DC converters, Schottky-Plus body diode for soft reverse recovery in BLDC motor control, and copper-clip LFPAK56E thermal performance for high-current load-switch designs.

Technical Context

This MOSFET employs Nexperia's NextPower-S3 Superjunction trench technology with Schottky-Plus body diode integration, enabling fast switching with soft recovery and low Q_RR (53 nC typical). Its gate threshold voltage is 1.7 V (typ), optimized for 4.5 V logic-level drive while maintaining robust SOA in linear mode.

The device features exposed mounting base (drain-connected), triple-source terminals, and low parasitic inductance/resistance due to copper-clip die attach and solder die bonding-enabling high-current pulse handling up to 1613 A (10 µs) and avalanche energy rating of 2706 mJ (non-repetitive).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V maximum - supports 12 V/24 V/36 V input rails with 10 % margin for transients in server PSUs and eFuse applications.
R_DS(on)	0.94 mΩ max at V_GS = 10 V, 25 A, 25 °C - enables <1 W conduction loss at 30 A, critical for high-current synchronous rectifiers.
I_D (cont)	300 A at T_mb = 25 °C - validated under application conditions; actual PCB thermal design determines real-world current capability.
Q_G(tot)	76 nC max at V_GS = 4.5 V - ensures fast turn-on with low gate-drive power, reducing switching losses in 300–500 kHz DC-DC converters.
Q_GD	26 nC max - minimizes Miller-induced shoot-through risk and improves controllability during hard switching in half-bridge topologies.
T_j max	175 °C - qualified for extended operation in thermally constrained environments such as sealed server power modules.
R_th(j-mb)	0.45 K/W max - enables direct thermal coupling to heatsink via mounting base, supporting >250 W dissipation with proper board layout.

Pinout & Package

LFPAK56E (SOT1023) is a 4-lead, single-ended surface-mount package with copper-clip construction, solder die attach, and exposed mounting base (drain-connected). It delivers low-inductance, high-reliability interconnect suitable for wave soldering and visual solder-joint inspection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce bond-wire inductance and current density; enable high-current return path routing on PCB.
4	Gate (G)	Single gate input with low RG (1 Ω typ); designed for direct connection to gate drivers without series resistance in most 4.5 V–10 V drive scenarios.
Mounting Base (mb)	Drain (D)	Exposed copper pad electrically connected to drain; serves as primary thermal path and high-current output node-requires dedicated thermal pad and solder stencil design per Fig. 18.

Key Features

Feature	Design Value
Schottky-Plus body diode	Soft reverse recovery (t_rr = 45 ns, Q_r = 53 nC) without elevated I_DSS leakage-eliminates snubber needs in synchronous rectifier flyback and LLC phases.
Avalanche rating	100 % tested unclamped avalanche energy: 2706 mJ at 25 °C - enables robustness against inductive switching transients in motor control and load-switch fault events.
NextPower-S3 Superjunction	Optimized for 4.5 V gate drive with V_GS(th) = 1.7 V (typ) and ΔV_GS(th)/ΔT = −4.9 mV/K - ensures stable turn-on across automotive-grade temperature range without gate overdrive.
LFPAK56E reliability	Qualified to 175 °C junction, wave-solderable leads, and visual solder-joint inspection capability - supports high-yield, high-reliability manufacturing in industrial power modules.

Applications

High-Performance Synchronous Rectification

Server DC-DC Converters

Use Scenario: Secondary-side switch in 48 V–12 V buck converter for AI accelerator racks.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) synchronous rectifier replacing Schottky diodes to reduce conduction loss and improve efficiency above 95 %.

Use Value: 0.94 mΩ R_DS(on) cuts conduction loss by >60 % vs. 3 mΩ alternatives at 200 A, directly enabling higher power density in 1U server PSUs.

Use Scenario: Primary-side high-side switch in multiphase VR13/VR14 CPU voltage regulator modules.

IC Role / Device Role / Timing Role: Fast-switching, low-Q_GD power FET operating at 300–600 kHz with tight dead-time control.

Use Value: 26 nC Q_GD and 45 ns t_d(on) minimize shoot-through risk and switching loss, supporting >90 % efficiency at 300 A peak load.

Brushless DC Motor Control

Battery Protection & eFuse

Use Scenario: Low-side switch in 24 V/48 V BLDC inverter for industrial HVAC fans.

IC Role / Device Role / Timing Role: High-current, avalanche-rugged phase-leg switch handling regenerative braking energy and PWM commutation.

Use Value: 1613 A pulsed current rating and 577 mJ single-pulse avalanche energy allow safe operation during motor stall and short-circuit events without external protection.

Use Scenario: Main power path switch in 4-cell Li-ion battery pack protection IC subsystem.

IC Role / Device Role / Timing Role: Load-switch FET with fast turn-off (<100 ns) and low R_DS(on) to minimize voltage drop during normal operation and enable precise overcurrent cutoff.

Use Value: 0.94 mΩ R_DS(on) limits voltage drop to <30 mV at 30 A, preserving battery runtime; exposed drain pad simplifies thermal management in compact BMS layouts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP026N04L	R_DS(on) = 0.95 mΩ @ 10 V, but uses TO-220FP package (higher R_th(j-a) = 35 K/W vs. 0.45 K/W) and lacks Schottky-Plus diode.	Requires heatsink and external snubber in synchronous rectification; unsuitable for space-constrained eFuse designs.	Prefer only when through-hole assembly or legacy footprint compatibility is mandatory.
Vishay SiR626DP	R_DS(on) = 0.85 mΩ @ 10 V, PowerPAK SO-8 package, but Q_G(tot) = 92 nC (vs. 76 nC) and no 100 % avalanche test.	Higher gate charge increases driver loss in high-frequency DC-DC; lower avalanche ruggedness reduces margin in motor control fault conditions.	Select only if lowest possible R_DS(on) dominates over switching loss and transient robustness requirements.

Compared with IPP026N04L and SiR626DP, PSMNR90-40YLHX uniquely combines LFPAK56E's ultra-low thermal resistance, Schottky-Plus soft recovery, and 100 % avalanche testing-making it optimal for thermally dense, EMI-sensitive, and fault-prone high-current switching where reliability and efficiency are co-prioritized.

Availability

PSMNR90-40YLHX is available at Aetrix Electronics and suitable for high-current synchronous rectification, server DC-DC conversion, and battery eFuse applications requiring stable component supply, long-lifecycle support, and traceable sourcing for production ramp.

Supply support for PSMNR90-40YLHX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies-including high-performance MOSFETs, logic, and analog devices-with manufacturing rooted in process innovation and automotive-grade quality systems.

This device belongs to Nexperia's NextPower-S3 Superjunction MOSFET product line, engineered specifically for high-efficiency, high-current power conversion in datacenter, industrial, and transportation systems where thermal density and switching integrity are critical.

FAQ

What is the maximum continuous drain current for PSMNR90-40YLHX at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is 285 A (per Table 5 Limiting Values). This derating reflects thermal constraints of the LFPAK56E package and must be validated against actual PCB copper area, airflow, and ambient conditions-not just datasheet curves.

Does PSMNR90-40YLHX require a gate resistor for standard 4.5 V logic-level drive?

No external gate resistor is required for basic turn-on with 4.5 V drive, as its gate resistance is 1 Ω (typ) and Q_G is optimized for low-drive applications. However, a 2–5 Ω series resistor is recommended to damp ringing in high-di/dt layouts and prevent overshoot in half-bridge configurations.

How does the Schottky-Plus body diode differ from a standard MOSFET body diode in practical operation?

The Schottky-Plus diode delivers soft reverse recovery (t_rr = 45 ns, Q_r = 53 nC) with minimal tail current, reducing EMI and eliminating voltage spikes during commutation-unlike conventional body diodes that exhibit hard recovery and require snubbers in synchronous rectifiers.

Can PSMNR90-40YLHX be used in automotive applications?

No-this part is not AEC-Q101 qualified and carries no automotive qualification statement in its official documentation. Nexperia explicitly states non-automotive status in Section 13 (Legal Information); use in safety-critical vehicle systems is prohibited without additional validation and agreement.

PSMNR90-40YLHX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SOT-1023, 4-LFPAK

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 300A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 0.94mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.05V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 168 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 12673 pF @ 20 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 333W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56; Power-SO8

PSMNR90-40YLHX FAQ

1.How can I place an order for PSMNR90-40YLHX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMNR90-40YLHX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMNR90-40YLHX reliable?

The price and inventory of PSMNR90-40YLHX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMNR90-40YLHX is usually 5 days.

3.What payment methods are accepted for PSMNR90-40YLHX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMNR90-40YLHX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMNR90-40YLHX?

PSMNR90-40YLHX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMNR90-40YLHX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMNR90-40YLHX?

For technical support, including PSMNR90-40YLHX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMNR90-40YLHX requirements.

6.How does Aetrix verify that PSMNR90-40YLHX is sourced from the original manufacturer or authorized distributors?

All PSMNR90-40YLHX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMNR90-40YLHX meets industry standards.

7.What is the process for return or replacement of PSMNR90-40YLHX?

All PSMNR90-40YLHX units undergo pre-shipment inspection (PSI). If there is an issue with PSMNR90-40YLHX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMNR90-40YLHX part is unused and in its original packaging.

Return procedure for PSMNR90-40YLHX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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