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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMNR90-40YSNX

Name: PSMNR90-40YSNX
Brand: Nexperia USA Inc.
SKU: PSMNR90-40YSNX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMNR90-40YSNX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMNR90-40YSNX.pdf

Description:: PSMNR90-40YSN/SOT669/LFPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PSMNR90-40YSN from Nexperia is an N-channel ASFET optimized for high-current battery system switching, featuring 40 V V_DS, 0.97 mΩ R_DS(on) at 25 °C, 320 A continuous drain current (T_mb = 25 °C), and 100% avalanche-rated I_AS = 190 A - deployed in eFuse, BMS main switch, and BLDC motor phase legs.

For engineers reviewing the PSMNR90-40YSN datasheet, PSMNR90-40YSN pinout, PSMNR90-40YSN application, or PSMNR90-40YSN equivalent, key selection criteria include SOA robustness under transient overload, thermal resistance to mounting base (R_th(j-mb) = 0.48–0.56 K/W), LFPAK56E gull-wing solderability, and low Q_GD (12–72 nC) for fast switching control.

Technical Context

This device uses a trench-gated silicon MOSFET structure with copper-clip interconnect in LFPAK56E (SOT669), enabling strong safe operating area (SOA) up to 1465 A peak pulsed current and unclamped avalanche energy E_DS(AL) = 443 mJ at T_j(init) = 25 °C.

Its gate threshold voltage V_GS(th) ranges from 2.4 V (min) to 3.6 V (max) at 25 °C, with negative temperature coefficient (−7.2 mV/K), and exhibits low C_iss = 4552–10622 pF and C_oss = 1166–2166 pF for efficient hard-switching in synchronous rectification and load-switch topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - maximum blocking voltage for 12–36 V battery systems with 20 % margin
R_DS(on)	0.97 mΩ max at V_GS = 10 V, I_D = 25 A, T_j = 25 °C - enables <1 W conduction loss at 320 A
I_D (cont)	320 A at T_mb = 25 °C - validated continuous current, limited by PCB thermal design in practice
I_AS	190 A - 100% tested non-repetitive avalanche current supports fault-tolerant BMS protection
R_th(j-mb)	0.48–0.56 K/W - low junction-to-mounting-base thermal resistance enables direct heatsink attachment
Q_GD	12–72 nC - gate-drain charge determines Miller plateau duration and switching loss in hard-switched converters
V_GS(th)	2.4–3.6 V - ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers

Pinout & Package

Supplied in LFPAK56E (SOT669), a high-power surface-mount package with copper clip construction, gull-wing leads, and exposed mounting base connected to drain - qualified to 175 °C junction temperature and optimized for low-inductance, high-current PCB layouts.

Pin/Terminal	Circuit Role	Design Meaning
1	Source	Primary source terminal; tied internally to pins 2 and 3 for low-inductance parallel connection
2	Source	Redundant source connection reducing package inductance and improving current sharing
3	Source	Third source terminal enabling symmetric PCB layout and minimized loop inductance in high-di/dt paths
4	Gate	Control input; requires external gate resistor to manage Q_G = 81–189 nC and prevent oscillation
Mounting Base	Drain	Exposed copper pad electrically connected to drain; serves as primary thermal path and high-current return

Key Features

Feature	Design Value
Strong SOA capability	Supports 1465 A pulsed current (tp ≤ 10 µs) and stable operation across full V_DS-I_D curve without secondary breakdown
Avalanche rated & 100% tested	Guarantees 190 A I_AS and 443 mJ E_DS(AL) - eliminates need for external snubbers in overvoltage fault conditions
LFPAK copper clip	Reduces package resistance and inductance by >30 % vs. wire-bonded SO-8, improving power density and switching efficiency
LFPAK gull wing lead	Enables robust reflow soldering with 0.25 mm minimum solder fillet height and IPC Class 2/3 compliance
175 °C qualified package	Allows operation in high-ambient environments (e.g., under-hood BMS, industrial motor drives) without derating

Applications

Battery Management System (BMS) Main Switch

eFuse Protection Circuit

Use Scenario: High-side main disconnect switch in 48 V lithium-ion battery packs handling up to 300 A continuous discharge.

IC Role / Device Role / Timing Role: Power MOSFET acting as bidirectional current-controlled switch; controlled via isolated gate driver with <100 ns propagation delay.

Use Value: 0.97 mΩ R_DS(on) reduces conduction loss to <90 W at 300 A, minimizing thermal stress and enabling compact heatsink design.

Use Scenario: Solid-state replacement for mechanical fuses in server PSU input protection, responding to overcurrent within 100 µs.

IC Role / Device Role / Timing Role: Fast-acting current-limiting switch triggered by current-sense amplifier and comparator; operates in linear mode during fault.

Use Value: Strong SOA and 190 A avalanche rating allow sustained operation during short-circuit events without destruction, enabling precise trip timing.

BLDC Motor Phase Leg

High-Performance Synchronous Rectifier

Use Scenario: Low-side switch in 3-phase inverter driving 5–10 kW traction motors in e-bikes and light EVs.

IC Role / Device Role / Timing Role: N-channel power switch in half-bridge configuration; driven by bootstrap gate driver with 10 V gate voltage.

Use Value: Low Q_GD (12–72 nC) and fast tr/tf (<50 ns) enable 50–100 kHz PWM with minimal switching loss and reduced EMI.

Use Scenario: Secondary-side switch in 48 V–12 V DC-DC converter for automotive ADAS modules requiring >96 % efficiency.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; body diode recovery (Q_r = 24 nC) managed by adaptive gate control.

Use Value: 0.79 V V_SD forward drop and low R_DS(on) cut conduction losses by >60 % vs. 40 V Schottky, improving thermal margin at 200 A output.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP026N04L	40 V, 0.26 mΩ, TO-220 package - lower R_DS(on) but higher thermal resistance (R_th(j-c) ≈ 0.8 K/W) and no avalanche rating	Requires bolt-down heatsink; unsuitable for space-constrained BMS or eFuse where LFPAK56E footprint and avalanche ruggedness are critical	Choose only when ultra-low conduction loss dominates and board-level thermal management allows TO-220 mounting
Vishay SiR626DP	40 V, 0.62 mΩ, PowerPAK SO-8 - higher R_DS(on) than PSMNR90-40YSN, no 100% I_AS test, R_th(j-mb) not specified	Lacks guaranteed avalanche performance and thermal metrics needed for fault-tolerant battery protection circuits	Select only for cost-sensitive, non-safety-critical load-switch applications where SOA validation is not required

Compared with IPP026N04L and SiR626DP, PSMNR90-40YSN uniquely combines 0.97 mΩ R_DS(on), 190 A tested avalanche capability, and 0.48 K/W R_th(j-mb) in a surface-mount LFPAK56E package - making it the only option qualified for compact, high-reliability BMS main switches and eFuse designs demanding both conduction efficiency and fault survivability.

Availability

PSMNR90-40YSN is available at Aetrix Electronics and suitable for battery management systems, electronic fuses, and BLDC motor control applications requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and automotive-grade programs.

Supply support for PSMNR90-40YSN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging like LFPAK and rigorous automotive qualification standards.

This part belongs to Nexperia's ASFET (Advanced Silicon FET) product line, engineered specifically for high-efficiency, high-reliability battery system switching - emphasizing SOA robustness, avalanche ruggedness, and thermal performance in compact surface-mount packages.

FAQ

What is the maximum continuous drain current rating for PSMNR90-40YSN?

The datasheet specifies 320 A continuous drain current at T_mb = 25 °C, verified in application testing. Practical current capability depends on PCB copper area, heatsinking, and ambient temperature - at T_mb = 100 °C, rated current drops to 259 A per Fig. 2. The mounting base must be thermally coupled to a heatsink or large copper plane to sustain high current.

Is PSMNR90-40YSN suitable for synchronous rectification in high-frequency DC-DC converters?

Yes - its low R_DS(on) (0.97 mΩ), fast switching parameters (t_r = 49 ns, t_f = 58 ns), and low Q_GD (12–72 nC) make it well-suited for synchronous rectification up to 100 kHz. The body diode's Q_r = 24 nC and V_SD = 0.79 V at 25 A further reduce reverse recovery loss compared to Schottky diodes.

How is avalanche ruggedness validated for this MOSFET?

Nexperia performs 100% production testing for I_AS = 190 A under defined conditions: V_sup ≤ 40 V, V_GS = 10 V, T_j(init) = 25 °C, R_GS = 50 Ω. Each unit is subjected to unclamped inductive switching with E_DS(AL) = 443 mJ, ensuring guaranteed single-pulse avalanche capability without degradation.

What PCB layout recommendations apply to the LFPAK56E package?

Per Fig. 20, use a 4.2 mm × 4.7 mm solder land with 125 µm stencil for reflow; the mounting base requires ≥1000 mm² of 2 oz copper connected via ≥8 thermal vias (0.3 mm diameter, 0.8 mm pitch) to internal ground planes. Avoid solder mask over the mounting base to ensure optimal thermal transfer and mechanical reliability.

PSMNR90-40YSNX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 320A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 0.97mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 3.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 189 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10622 pF @ 25 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 268W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMNR90-40YSNX FAQ

1.How can I place an order for PSMNR90-40YSNX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMNR90-40YSNX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMNR90-40YSNX reliable?

The price and inventory of PSMNR90-40YSNX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMNR90-40YSNX is usually 5 days.

3.What payment methods are accepted for PSMNR90-40YSNX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMNR90-40YSNX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMNR90-40YSNX?

PSMNR90-40YSNX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMNR90-40YSNX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMNR90-40YSNX?

For technical support, including PSMNR90-40YSNX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMNR90-40YSNX requirements.

6.How does Aetrix verify that PSMNR90-40YSNX is sourced from the original manufacturer or authorized distributors?

All PSMNR90-40YSNX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMNR90-40YSNX meets industry standards.

7.What is the process for return or replacement of PSMNR90-40YSNX?

All PSMNR90-40YSNX units undergo pre-shipment inspection (PSI). If there is an issue with PSMNR90-40YSNX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMNR90-40YSNX part is unused and in its original packaging.

Return procedure for PSMNR90-40YSNX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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