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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMNR90-50SLHAX

Name: PSMNR90-50SLHAX
Brand: Nexperia USA Inc.
SKU: PSMNR90-50SLHAX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMNR90-50SLHAX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SOT-1235

Datasheet:: PSMNR90-50SLHAX.pdf

Description:: PSMNR90-50SLH/SOT1235/LFPAK88

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PSMNR90-50SLH from Nexperia is an N-channel logic-level enhancement-mode MOSFET in LFPAK88 (SOT1235) package, rated for 50 V V_DS, 0.7–0.9 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, 410 A continuous drain current, and qualified to 175 °C junction temperature. It delivers high-efficiency switching in battery isolation and DC motor control, leveraging SchottkyPlus technology for low spiking and soft body-diode recovery.

For engineers reviewing the PSMNR90-50SLH datasheet, PSMNR90-50SLH pinout, PSMNR90-50SLH application, or PSMNR90-50SLH equivalent, key selection criteria include its 0.35 K/W R_th(j-mb), avalanche-rated ruggedness (3 J E_AS), narrow V_GS(th) (1.2–2.2 V), ultra-low Q_G (112–174 nC), and compatibility with 4.5 V logic-level drive in high-current linear-mode operation.

Technical Context

This MOSFET employs Nexperia's SchottkyPlus technology to achieve Schottky-like switching performance-low reverse recovery charge (Q_r = 66 nC), fast trr (48 ns), and soft diode recovery-without elevated I_DSS leakage. Its copper-clip die attach and exposed mounting base minimize package inductance and thermal resistance.

The device features a 4-pin LFPAK88 configuration with three parallel source terminals and a drain-connected mounting base, enabling high-current PCB conduction paths and optimized thermal transfer to heatsinks. Gate threshold voltage is tightly distributed (1.2–2.2 V) to support stable paralleling in high-power eFuse and load-switch designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	50 V maximum drain-source voltage - supports 36–42 V lithium-ion battery systems with margin for transients.
R_DS(on) @ V_GS = 10 V	0.7–0.9 mΩ typical - enables <1 W conduction loss at 400 A, critical for high-efficiency battery isolation.
I_D continuous	410 A at T_mb = 25 °C - validated under application test conditions; limited by PCB thermal design in practice.
Q_G(tot)	112–174 nC at V_GS = 4.5 V - ensures fast, low-loss switching up to 500 kHz in synchronous rectifier applications.
R_th(j-mb)	0.35–0.4 K/W - allows direct thermal coupling to heatsinks, supporting >300 W power dissipation with minimal ΔT.
E_AS	3 J non-repetitive avalanche energy - provides robust fault tolerance during inductive load switching in motor drives.
V_GS(th)	1.2–2.2 V - narrow distribution improves current sharing when paralleling multiple devices in high-current eFuse modules.

Pinout & Package

LFPAK88 (SOT1235) is an 8 mm × 8 mm × 1.6 mm surface-mount package with exposed copper mounting base for low-inductance, high-current, and high-thermal-performance operation. The package uses copper-clip die attach and soldered lead-frame for mechanical reliability and optimal solder-joint inspection.

Pin/Terminal	Circuit Role	Design Meaning
1	G	Gate input - accepts 4.5 V logic-level drive; low Q_G enables efficient gate driving with standard microcontroller GPIOs.
2	S	Source terminal - one of three parallel source connections; reduces current density and parasitic inductance in high-ID layouts.
3	S	Source terminal - electrically identical to Pin 2 and Pin 4; used for multi-point PCB routing to minimize loop area.
4	S	Source terminal - completes three-source configuration; supports Kelvin sensing or separate power/signal return paths.
mb	D	Mounting base - internally connected to drain; serves as primary current path and thermal interface to heatsink or copper plane.

Key Features

Feature	Design Value
LFPAK88 package	8 × 8 mm footprint with exposed drain base - replaces D2PAK and 10 × 12 mm packages while improving thermal resistance by >40 %.
SchottkyPlus technology	Soft body-diode recovery (trr = 48 ns, Q_r = 66 nC) with I_DSS ≤ 1 µA at 125 °C - eliminates trade-off between low EMI and high leakage.
Linear-mode SOA	Rated for safe high-current switching (e.g., 100 A @ 20 V) without thermal runaway - enables reliable hot-swap and inrush limiting.
Avalanche rating	100 % tested to 3 J E_AS - guarantees ruggedness against inductive kickback in BLDC motor phase-leg and battery protection circuits.
Narrow V_GS(th)	1.2–2.2 V range - enables precise current balancing across paralleled devices in high-power load switches and eFuse arrays.

Applications

Brushless DC Motor Control

Synchronous Rectification

Use Scenario: High-current phase-leg switching in 36 V e-bike or power-tool motor controllers.

IC Role / Device Role / Timing Role: Low-side or high-side power switch handling peak currents >1 kA with minimal conduction and switching loss.

Use Value: 0.35 K/W R_th(j-mb) and 410 A rating enable compact thermal design; SchottkyPlus diode reduces body-diode losses during freewheeling.

Use Scenario: Secondary-side rectification in 3 kW server AC/DC power supplies.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diodes in LLC resonant converters operating at 300–500 kHz.

Use Value: Ultra-low Q_G (112–174 nC) and Q_OSS (82 nC) minimize gate drive loss and improve efficiency above 96 %.

Battery Protection

eFuse and Load Switch

Use Scenario: Overcurrent and short-circuit protection in 10-cell Li-ion battery packs (36–42 V).

IC Role / Device Role / Timing Role: Main isolation switch in active battery management systems with fast fault response (<100 µs).

Use Value: Avalanche-rated ruggedness (3 J) and strong linear-mode SOA allow safe interruption of >500 A faults without device failure.

Use Scenario: Programmable current-limited power delivery in industrial PLC backplanes and telecom line cards.

IC Role / Device Role / Timing Role: High-current load switch with integrated current sensing and thermal foldback.

Use Value: Tight V_GS(th) distribution and low R_DS(on) drift over temperature ensure accurate current limiting across -40 to +150 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP026N04L	40 V V_DS, 0.26 mΩ R_DS(on), TO-263 package, no avalanche rating	Limited to ≤40 V systems; lacks 100 % avalanche testing and SchottkyPlus soft recovery	Prefer PSMNR90-50SLH for 42 V battery systems requiring avalanche ruggedness and low EMI.
Vishay SiR626DP	60 V V_DS, 0.95 mΩ R_DS(on), PowerPAK 8 × 8, Q_G = 190 nC	Higher gate charge increases switching loss at >200 kHz; no specified linear-mode SOA data	Prefer PSMNR90-50SLH where soft diode recovery, low Q_G, and verified linear-mode operation are required.

Compared with IPP026N04L and SiR626DP, PSMNR90-50SLH uniquely combines 50 V rating, 100 % avalanche testing, SchottkyPlus diode behavior, and LFPAK88's superior thermal resistance - making it optimal for safety-critical battery isolation and high-frequency synchronous rectification where reliability and EMI are paramount.

Availability

PSMNR90-50SLH is available at Aetrix Electronics and suitable for brushless DC motor control, battery protection, eFuse implementation, and synchronous rectification requiring stable component supply across industrial, automotive-grade adjacent, and high-reliability embedded programs.

Supply support for PSMNR90-50SLH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors for high-volume applications, delivering high-performance, high-reliability discrete and logic devices.

PSMNR90-50SLH belongs to Nexperia's ASFETs for Battery Isolation and DC Motor Control product line, engineered specifically for high-current, high-ruggedness, and low-EMI operation in 36–42 V battery-powered systems.

FAQ

What is the maximum continuous drain current for PSMNR90-50SLH, and what limits it in practice?

The PSMNR90-50SLH is rated for 410 A continuous drain current at T_mb = 25 °C, validated in application tests. In real-world use, this current is limited not by the device itself but by PCB copper area, thermal interface quality, heatsink capacity, and ambient temperature - as shown in Figure 2 of the datasheet, where current derates to 302 A at T_mb = 100 °C.

How does SchottkyPlus technology improve performance compared to standard MOSFETs?

SchottkyPlus delivers Schottky-like soft body-diode recovery (trr = 48 ns, Q_r = 66 nC) and low voltage overshoot during turn-off, reducing EMI and snubber requirements. Crucially, it achieves this without the high I_DSS leakage (>10 µA) typical of integrated Schottky MOSFETs - maintaining I_DSS ≤ 1 µA at 125 °C.

Can PSMNR90-50SLH be paralleled reliably, and what design considerations apply?

Yes - its narrow V_GS(th) range (1.2–2.2 V) and flat R_DS(on) vs. temperature curve enable stable current sharing. Designers must ensure matched gate drive impedance, symmetrical PCB layout, and shared thermal mass; the three-source-pin configuration further aids balanced current distribution across paralleled units.

Is PSMNR90-50SLH suitable for linear-mode (SOA) operation, and what evidence supports this?

Yes - it is explicitly characterized for linear-mode use with strong Safe Operating Area (SOA) performance, including tested capability at 100 A × 20 V (2 kW) in single-pulse conditions. The datasheet provides SOA curves (Figure 3), avalanche energy ratings (3 J), and 100 % avalanche testing - confirming suitability for hot-swap, inrush limiting, and analog current regulation.

PSMNR90-50SLHAX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SOT-1235

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 50 V

Current - Continuous Drain (Id) @ 25°C:: 410A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 0.9mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 383 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 25001 pF @ 25 V

FET Feature:: Schottky Diode (Isolated)

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK88 (SOT1235)

PSMNR90-50SLHAX FAQ

1.How can I place an order for PSMNR90-50SLHAX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMNR90-50SLHAX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMNR90-50SLHAX reliable?

The price and inventory of PSMNR90-50SLHAX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMNR90-50SLHAX is usually 5 days.

3.What payment methods are accepted for PSMNR90-50SLHAX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMNR90-50SLHAX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMNR90-50SLHAX?

PSMNR90-50SLHAX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMNR90-50SLHAX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMNR90-50SLHAX?

For technical support, including PSMNR90-50SLHAX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMNR90-50SLHAX requirements.

6.How does Aetrix verify that PSMNR90-50SLHAX is sourced from the original manufacturer or authorized distributors?

All PSMNR90-50SLHAX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMNR90-50SLHAX meets industry standards.

7.What is the process for return or replacement of PSMNR90-50SLHAX?

All PSMNR90-50SLHAX units undergo pre-shipment inspection (PSI). If there is an issue with PSMNR90-50SLHAX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMNR90-50SLHAX part is unused and in its original packaging.

Return procedure for PSMNR90-50SLHAX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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