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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMNR90-80ASEJ

Name: PSMNR90-80ASEJ
Brand: Nexperia USA Inc.
SKU: PSMNR90-80ASEJ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMNR90-80ASEJ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 12-BESOP (0.370", 9.40mm Width), Exposed Pad

Datasheet:: PSMNR90-80ASEJ.pdf

Description:: PSMNR90-80ASE/SOT8000A/CCPAK12

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PSMNR90-80ASEJ from Nexperia is an N-channel enhancement-mode MOSFET in a CCPAK1212 (SOT8000A) package, rated for 80 V V_DS, 0.9 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and qualified to 175 °C junction temperature. It delivers enhanced Safe Operating Area (SOA) performance for linear-mode operation and is optimized for hot-swap, soft-start, and e-fuse applications in 48 V telecom backplane systems.

For engineers reviewing the PSMNR90-80ASEJ datasheet, PSMNR90-80ASEJ pinout, PSMNR90-80ASEJ application, or PSMNR90-80ASEJ equivalent, this device is selected for high-current load switching where robust avalanche energy handling (1890 mJ), low thermal resistance (0.075 K/W j-mb), and JEDEC-qualified copper-clip packaging are critical design requirements.

Technical Context

This MOSFET employs a trench-gate silicon process with optimized cell layout to achieve ultra-low R_DS(on) while maintaining wide SOA margins across temperature. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 3.6 V at 25 °C and exhibits a negative temperature coefficient (−6.92 mV/K), enabling stable current sharing in parallel configurations.

The CCPAK1212 package integrates a thermally exposed mounting base directly connected to the drain, enabling efficient heat transfer to the PCB heatsink. Its 12 mm × 12 mm footprint supports >495 A continuous drain current when mounted on a 70 µm copper FR4 board with minimum thermal pad area per Fig. 6.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum drain-source blocking voltage; supports 48 V rail systems with ≥1.6× safety margin against transients.
R_DS(on)	0.71–0.9 mΩ @ V_GS = 10 V, T_j = 25 °C - Enables <1.25 W conduction loss at 350 A, critical for high-efficiency power distribution.
I_D (cont)	495 A @ T_mb = 25 °C - Validated continuous current rating; limited in practice by PCB thermal design and mounting base temperature.
E_AS	1890 mJ - Non-repetitive avalanche energy; allows reliable operation during unclamped inductive turn-off events in hot-swap controllers.
R_th(j-mb)	0.075 K/W - Junction-to-mounting-base thermal resistance; enables direct thermal coupling to heatsink without thermal interface material.
Q_G(tot)	168–504 nC - Total gate charge range; determines gate driver power requirement and switching speed trade-off in high-frequency soft-start control.
V_GS(th)	2.0–3.6 V @ T_j = 25 °C - Gate threshold voltage window; ensures reliable turn-on with standard 5 V or 10 V gate drivers while avoiding spurious conduction.

Pinout & Package

CCPAK1212 (SOT8000A) is a surface-mounted copper-clip package measuring 12 mm × 12 mm × 2.5 mm with 13 terminals: 12 signal/terminal pins plus an exposed mounting base (mb) electrically tied to the drain. The package is JEDEC-qualified (MO-359) and designed for open-market second-source compatibility and high-reliability thermal management.

Pin/Terminal	Circuit Role	Design Meaning
1	G	Gate input - Controls channel conduction; requires low-inductance gate loop routing to minimize oscillation during fast switching.
2–6	S	Source return path - Five parallel source terminals reduce source inductance and improve current sharing in high-di/dt load-switch applications.
7–12	D	Drain power path - Six drain terminals distribute high-current flow and reduce localized heating under 495 A DC conditions.
mb	D (mounting base)	Drain-connected thermal interface - Exposed copper base provides primary heat dissipation path to PCB heatsink; must be soldered to large copper pour.

Key Features

Feature	Design Value
Fully optimized SOA for linear mode	Supports sustained operation in active region (e.g., controlled inrush limiting) without thermal runaway up to T_j = 175 °C.
Ultra-low R_DS(on)	0.71 mΩ typical minimizes I²R losses, enabling >99% efficiency in 48 V/300 A power distribution modules.
JEDEC-qualified CCPAK1212	SOT8000A package ensures mechanical and thermal interoperability across multiple suppliers and simplifies second-source qualification.
Enhanced avalanche ruggedness	1890 mJ E_AS rating validated by 100% production test - eliminates need for external snubbers in hot-swap controller output stages.
High-temperature qualification	175 °C junction rating enables operation in sealed telecom chassis with ambient temperatures up to 105 °C and minimal derating.

Applications

Hot Swap

Load Switch

Use Scenario: Insertion of line cards into live 48 V telecom backplanes without causing bus voltage droop or damaging upstream components.

IC Role / Device Role / Timing Role: Main power FET in hot-swap controller output stage; operates in linear mode during controlled ramp-up, then fully enhanced for steady-state conduction.

Use Value: Enhanced SOA prevents thermal failure during 100–500 ms inrush limiting; 0.9 mΩ R_DS(on) keeps steady-state power loss below 1.5 W at 400 A.

Use Scenario: Isolation of auxiliary power domains (e.g., FPGA banks, memory subsystems) in industrial servers and AI accelerators.

IC Role / Device Role / Timing Role: High-current, low-loss pass element controlled by PMIC or discrete logic; handles both steady-state load and transient surges.

Use Value: 495 A continuous rating supports multi-rail 12 V/48 V systems; CCPAK1212's low R_th(j-mb) enables compact thermal design without forced air cooling.

Soft Start

E-fuse

Use Scenario: Gradual energization of high-capacitance loads (e.g., bulk capacitor banks, PoE injectors) to limit peak inrush current.

IC Role / Device Role / Timing Role: Linear-mode current limiter regulated by external op-amp or dedicated soft-start IC; dissipates energy during ramp phase.

Use Value: SOA curve supports 100+ ms linear operation at 200 A without exceeding T_j = 175 °C; gate charge profile enables precise slew-rate control.

Use Scenario: Overcurrent protection for 48 V battery backup systems and DC-DC converter inputs in edge computing nodes.

IC Role / Device Role / Timing Role: Current-sensing and fault-interrupting switch; responds to overcurrent events within microseconds via integrated current monitor feedback.

Use Value: 3457 A pulsed peak current rating withstands short-circuit faults; 1890 mJ avalanche energy absorbs energy during fast turn-off under inductive fault conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH36N80L	800 V rating, 36 A ID, TO-247 package, R_DS(on) = 220 mΩ - higher voltage, lower current, much higher on-resistance.	Designed for offline SMPS primary side; unsuitable for 48 V/400 A hot-swap due to excessive conduction loss and inadequate SOA.	Select only if 800 V blocking is required and current <50 A; not a functional substitute for PSMNR90-80ASEJ.
STW100N80K5	800 V rating, 100 A ID, TO-247 package, R_DS(on) = 12.5 mΩ - higher voltage, lower current, 14× higher R_DS(on).	Targeted at motor drives and UPS inverters; lacks CCPAK thermal performance and SOA optimization for linear-mode telecom use.	Acceptable only for lower-current (<100 A), higher-voltage applications where thermal constraints are less severe.

Compared with IXTH36N80L and STW100N80K5, PSMNR90-80ASEJ offers 14–30× lower R_DS(on), 5× higher continuous current, and JEDEC-qualified copper-clip packaging - making it uniquely suited for high-efficiency, high-reliability 48 V hot-swap and e-fuse systems where thermal density and SOA are dominant selection criteria.

Availability

PSMNR90-80ASEJ is available at Aetrix Electronics and suitable for hot-swap controllers, 48 V telecom power distribution units, and industrial e-fuse modules requiring stable component supply and long-term lifecycle support.

Supply support for PSMNR90-80ASEJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs.

The PSMNR90-80ASEJ belongs to Nexperia's Application Specific MOSFETs (ASFETs) product line, engineered specifically for hot-swap and soft-start functions in high-power DC infrastructure - emphasizing SOA robustness, low R_DS(on), and thermally optimized packaging.

FAQ

What is the maximum continuous drain current for PSMNR90-80ASEJ under real-world PCB conditions?

The datasheet specifies 495 A at T_mb = 25 °C with adequate heatsinking, but practical current is limited by PCB copper area, thermal vias, and ambient temperature. With a 25.4 mm square 70 µm copper pad on FR4 (per Fig. 6), sustained current remains above 350 A at T_mb = 80 °C. Derating curves in Fig. 2 must be applied based on actual mounting base temperature measurement.

Does PSMNR90-80ASEJ require a gate resistor for stability in hot-swap applications?

Yes - a gate resistor (typically 1–5 Ω) is recommended to dampen ringing caused by parasitic inductance between gate driver and the 12-pin gate terminal. The device's 1.28 Ω typical gate resistance (R_G) and 336 nC typical Q_G(tot) make it susceptible to oscillation without proper gate loop control; layout guidelines in Nexperia AN11580 apply.

How is the mounting base (mb) electrically connected, and what is its voltage potential?

The mounting base is internally bonded to the drain and shares the same electrical potential. It must be soldered to a PCB copper pour tied to the system drain net. This connection serves dual roles: primary thermal path (R_th(j-mb) = 0.075 K/W) and structural mechanical anchor. No isolation is provided between mb and drain terminals.

Can PSMNR90-80ASEJ be paralleled with identical units for higher current capacity?

Yes - its negative V_GS(th) temperature coefficient (−6.92 mV/K) promotes natural current sharing. Successful parallel operation requires matched gate drive paths, symmetrical PCB layout, and shared thermal interface. Nexperia validates parallel configurations up to four units in telecom reference designs, with total current scaling linearly within SOA limits.

PSMNR90-80ASEJ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 12-BESOP (0.370", 9.40mm Width), Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 495A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 0.9mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 3.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 504 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 36802 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 1.55kW (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: CCPAK1212

PSMNR90-80ASEJ FAQ

1.How can I place an order for PSMNR90-80ASEJ through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMNR90-80ASEJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMNR90-80ASEJ reliable?

The price and inventory of PSMNR90-80ASEJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMNR90-80ASEJ is usually 5 days.

3.What payment methods are accepted for PSMNR90-80ASEJ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMNR90-80ASEJ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMNR90-80ASEJ?

PSMNR90-80ASEJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMNR90-80ASEJ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMNR90-80ASEJ?

For technical support, including PSMNR90-80ASEJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMNR90-80ASEJ requirements.

6.How does Aetrix verify that PSMNR90-80ASEJ is sourced from the original manufacturer or authorized distributors?

All PSMNR90-80ASEJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMNR90-80ASEJ meets industry standards.

7.What is the process for return or replacement of PSMNR90-80ASEJ?

All PSMNR90-80ASEJ units undergo pre-shipment inspection (PSI). If there is an issue with PSMNR90-80ASEJ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMNR90-80ASEJ part is unused and in its original packaging.

Return procedure for PSMNR90-80ASEJ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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