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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMNR90-80ASFJ

Name: PSMNR90-80ASFJ
Brand: Nexperia USA Inc.
SKU: PSMNR90-80ASFJ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMNR90-80ASFJ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 12-BESOP (0.370", 9.40mm Width), Exposed Pad

Datasheet:: PSMNR90-80ASFJ.pdf

Description:: PSMNR90-80ASF/SOT8000A/CCPAK12

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PSMNR90-80ASF from Nexperia is an 80 V, 0.85 mΩ N-channel MOSFET in the CCPAK1212 (SOT8000A) copper-clip package, rated for 505 A continuous drain current at T_mb = 25 °C and qualified to 175 °C junction temperature. It delivers low Q_G × R_DS(on) figure-of-merit (309 nC × 0.85 mΩ), strong avalanche ruggedness (1890 mJ), and low Q_rr (94 nC), making it suitable for high-efficiency BLDC motor inverters and high-power OR-ing circuits.

For engineers reviewing the PSMNR90-80ASF datasheet, PSMNR90-80ASF pinout, PSMNR90-80ASF application, or PSMNR90-80ASF equivalent, this device supports high-current switching in industrial motor drives, battery protection systems, and full/half-bridge topologies where thermal robustness, low conduction loss, and fast recovery diode performance are critical selection criteria.

Technical Context

This NextPower MOSFET uses a trench-gated superjunction structure optimized for standard-level gate drive (V_GS = 10 V), with gate threshold voltage of 2–4 V and plateau voltage of 4.3 V. Its R_DS(on) exhibits +0.2%/°C temperature coefficient up to 175 °C, enabling stable parallel operation.

The integrated source-drain diode features low V_SD (0.74 V @ 25 A, T_j = 25 °C) and fast reverse recovery (t_rr = 77 ns), reducing switching losses in synchronous rectification and freewheeling paths. Thermal resistance from junction to mounting base is 0.075 K/W, requiring direct PCB copper thermal pad attachment for rated power delivery.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage compatible with 48 V and 60 V bus systems with margin
R_DS(on)	0.85 mΩ @ V_GS = 10 V, I_D = 25 A, T_j = 25 °C - Enables <1 W conduction loss at 50 A
I_D(max)	505 A @ T_mb = 25 °C - Requires ≥100 mm² 70 µm copper thermal pad for sustained rating
Q_G(tot)	309 nC typ - Supports efficient 100 kHz switching with moderate gate driver strength (e.g., 2 A peak)
Q_r	94 nC - Reduces turn-on loss in hard-switched bridge legs and minimizes voltage spiking
E_AS	1890 mJ - Withstands unclamped inductive energy without failure in motor control fault conditions
R_th(j-mb)	0.075 K/W - Enables >1.5 kW dissipation with ≤12 °C rise above mounting base temperature

Pinout & Package

CCPAK1212 (SOT8000A) is a 12 mm × 12 mm × 2.5 mm surface-mount copper-clip package with 13 terminals: 12 signal/power leads plus an exposed mounting base electrically connected to the drain. The package is JEDEC-registered for second-source compatibility and optimized for low-inductance, high-current PCB layouts.

Pin/Terminal	Circuit Role	Design Meaning
1	G	Gate input - Low-impedance connection for standard 10 V logic-level drive; requires <5 Ω external series resistance for dV/dt control
2–6	S	Source return path - Five parallel source terminals minimize source inductance and improve current sharing in paralleled configurations
7–12	D	Drain power output - Six drain terminals provide low-inductance, high-current path to DC bus or load
mb	D (mounting base)	Drain-connected thermal pad - Must be soldered to ≥200 mm² internal/external copper pour for rated thermal performance

Key Features

Feature	Design Value
Low Q_rr (94 nC)	Reduces turn-on switching loss and EMI in hard-switched half-bridges and OR-ing applications
Avalanche-rated & 100% tested	Guarantees single-pulse energy handling up to 1890 mJ without derating or screening uncertainty
CCPAK1212 package	Delivers 3× lower package inductance vs. TO-263 and enables >1.5 kW power density in compact footprints
Strong thermal interface (R_th(j-mb) = 0.075 K/W)	Allows direct thermal coupling to heatsink or chassis, eliminating need for thermal interface material in many designs
RoHS-compliant, halogen-free	Meets IPC-1752A material declaration requirements for industrial and consumer end-equipment compliance

Applications

Battery Protection

BLDC Motor Control

Use Scenario: High-current bidirectional battery disconnect in 48 V EV auxiliary systems and UPS modules.

IC Role / Device Role / Timing Role: Main power switch in active battery protection IC-controlled back-to-back configuration.

Use Value: 505 A rating handles surge currents during short-circuit events; low R_DS(on) minimizes voltage drop across protection FETs during normal operation.

Use Scenario: Upper-leg switch in 3-phase inverter driving 1–5 kW permanent magnet motors.

IC Role / Device Role / Timing Role: High-side power switch in PWM-driven motor phase leg with synchronous rectification.

Use Value: Fast diode recovery (77 ns t_rr) reduces shoot-through risk and improves efficiency at 20–50 kHz switching frequencies.

High-Power Half-Bridge

OR-ing Circuit

Use Scenario: Primary switching element in 1.2 kW LLC resonant converter primary side.

IC Role / Device Role / Timing Role: Main switching transistor in ZVS-capable half-bridge topology with gate drive referenced to floating source.

Use Value: Low Q_G × R_DS(on) (263 pC·Ω) enables high-frequency operation while maintaining conduction efficiency.

Use Scenario: Ideal diode replacement in redundant 48 V DC distribution for telecom and server racks.

IC Role / Device Role / Timing Role: Unidirectional power path controller with fast turn-off to prevent reverse current flow during hot-swap events.

Use Value: 129 A non-repetitive avalanche current rating ensures safe clamping during transient reverse-bias faults.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP026N08N8	80 V, 2.6 mΩ, TO-220 package; higher R_DS(on), lower I_D (180 A), no avalanche rating	Limited to lower-power (<500 W) half-bridge and OR-ing due to thermal and current constraints	Choose only if legacy TO-220 footprint required and power level <300 W
Vishay SiR626DP	80 V, 0.95 mΩ, PowerPAK® 1212-8; 390 A rating, no 100% avalanche test, R_th(j-mb) = 0.12 K/W	Acceptable for BLDC control but less robust under repetitive avalanche stress and higher thermal resistance	Prefer when cost sensitivity outweighs need for guaranteed avalanche ruggedness and lowest thermal resistance

Compared with PSMNR90-80ASF, IPP026N08N8 trades off current capability and ruggedness for legacy packaging, while SiR626DP offers similar on-resistance but lacks the 100% avalanche test guarantee and delivers 60% higher thermal resistance-making PSMNR90-80ASF the optimal choice for thermally constrained, high-reliability 1 kW+ industrial switching.

Availability

PSMNR90-80ASF is available at Aetrix Electronics and suitable for battery protection systems, BLDC motor inverters, high-power half-bridge converters, and OR-ing circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for PSMNR90-80ASF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs, ESD protection, and logic families.

This device belongs to the NextPower series-designed specifically for high-efficiency, high-current industrial switching applications demanding low R_DS(on), robust avalanche behavior, and JEDEC-standardized advanced packages like CCPAK1212.

FAQ

What is the maximum continuous drain current for PSMNR90-80ASF?

The datasheet specifies 505 A continuous drain current at T_mb = 25 °C with proper PCB thermal design. This rating assumes ≥200 mm² of 70 µm copper connected to the mounting base. At T_mb = 100 °C, the current must be derated to maintain safe junction temperature, as shown in Figure 2 of the official Nexperia datasheet.

Is PSMNR90-80ASF suitable for avalanche operation?

Yes-PSMNR90-80ASF is fully avalanche-rated and 100% tested per IEC 60134. It guarantees 1890 mJ non-repetitive drain-source avalanche energy (E_AS) at T_j(init) = 25 °C with V_sup ≤ 80 V, making it appropriate for inductive load switching and fault-tolerant motor control designs.

How does the CCPAK1212 package improve thermal performance?

The CCPAK1212 package uses a copper clip construction that directly bonds die to the exposed mounting base, achieving R_th(j-mb) = 0.075 K/W-over 2× better than comparable D²PAK packages. This allows >1.5 kW power dissipation with minimal temperature rise when soldered to adequate PCB copper area.

Can PSMNR90-80ASF be used in parallel configurations?

Yes-its positive R_DS(on) temperature coefficient (+0.2%/°C), five dedicated source terminals, and low gate charge variation enable stable current sharing. Parallel operation requires matched gate drive layout, identical PCB thermal vias, and individual gate resistors to suppress oscillation and ensure balanced dynamic current division.

PSMNR90-80ASFJ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 12-BESOP (0.370", 9.40mm Width), Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 505A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 0.85mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 463 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 32115 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 1.55kW (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: CCPAK1212

PSMNR90-80ASFJ FAQ

1.How can I place an order for PSMNR90-80ASFJ through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMNR90-80ASFJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMNR90-80ASFJ reliable?

The price and inventory of PSMNR90-80ASFJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMNR90-80ASFJ is usually 5 days.

3.What payment methods are accepted for PSMNR90-80ASFJ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMNR90-80ASFJ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMNR90-80ASFJ?

PSMNR90-80ASFJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMNR90-80ASFJ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMNR90-80ASFJ?

For technical support, including PSMNR90-80ASFJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMNR90-80ASFJ requirements.

6.How does Aetrix verify that PSMNR90-80ASFJ is sourced from the original manufacturer or authorized distributors?

All PSMNR90-80ASFJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMNR90-80ASFJ meets industry standards.

7.What is the process for return or replacement of PSMNR90-80ASFJ?

All PSMNR90-80ASFJ units undergo pre-shipment inspection (PSI). If there is an issue with PSMNR90-80ASFJ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMNR90-80ASFJ part is unused and in its original packaging.

Return procedure for PSMNR90-80ASFJ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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