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Nexperia USA Inc. PSMNR90-80CSFJ

Part No.:
PSMNR90-80CSFJ
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
12-BESOP (0.370", 9.40mm Width), Exposed Pad
Datasheet:
AetrixPSMNR90-80CSFJ.pdf
Description:
PSMNR90-80CSF/SOT8005A/CCPAK12
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:250

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Product details

Overview

PSMNR90-80CSF from Nexperia is an 80 V, 0.9 mΩ N-channel MOSFET in CCPAK1212i (SOT8005A) package, qualified to 175 °C junction temperature and rated for 505 A continuous drain current at Tmb = 25 °C. It features low Qrr (94 nC), high avalanche energy rating (1890 mJ), and inverted top-side cooling architecture-designed for high-power BLDC motor control, battery protection, and OR-ing circuits.

For engineers reviewing the PSMNR90-80CSF datasheet, PSMNR90-80CSF pinout, PSMNR90-80CSF application, or PSMNR90-80CSF equivalent, key selection criteria include RDS(on) temperature stability (1.6–2.1 mΩ at 175 °C), gate charge (309 nC typ), thermal resistance to mounting base (0.075 K/W), and JEDEC-qualified CCPAK1212i package compatibility with high-current PCB layouts.

Technical Context

This NextPower MOSFET employs a trench-gate superjunction structure optimized for low RDS(on) × QG figure-of-merit (FOM), enabling high-efficiency switching in hard-switched topologies. Its 12-terminal CCPAK1212i package integrates six parallel source terminals, one gate terminal, and five drain terminals plus mounting base-all electrically connected to drain-supporting >500 A continuous conduction with minimal parasitic inductance.

The device is fully avalanche-rated and 100% tested per IEC 60134, with non-repetitive EAS = 1890 mJ at 129 A and VDS ≤ 80 V. Gate threshold voltage is 3.6 V (min) at –55 °C and 1.52 V (typ) at 175 °C, ensuring robust turn-on margin across industrial temperature range while maintaining low leakage (≤200 µA at 125 °C).

Key Specifications

ParameterValue and Actual Design Meaning
VDS80 V - Maximum blocking voltage compatible with 48 V and 60 V bus systems with safety margin.
RDS(on)0.72–0.9 mΩ @ 25 °C - Enables <1 W conduction loss at 50 A, critical for high-current power stages.
ID(cont)505 A @ Tmb = 25 °C - Validated continuous current under real thermal mounting conditions, not theoretical limit.
QG(tot)309 nC typ - Low gate drive energy requirement supports efficient 100 kHz+ switching with standard gate drivers.
Rth(j-mb)0.075 K/W - Enables direct heatsink attachment to exposed drain pad for top-side cooling without thermal vias.
EAS1890 mJ - Withstands unclamped inductive switching events in motor drives and DC-DC converters without failure.
Qr94 nC - Reduces diode recovery losses and voltage spiking in synchronous rectification and half-bridge freewheeling.

Pinout & Package

CCPAK1212i (SOT8005A) is a 12 mm × 12 mm × 2.5 mm surface-mount copper clip package with inverted layout: drain-connected mounting base on bottom, source/gate terminals on top side. Optimized for top-side cooling and high-current PCB routing with JEDEC-standard footprint.

Pin/TerminalCircuit RoleDesign Meaning
1–5SourceFive parallel low-inductance source connections reduce common-source inductance and improve switching speed.
6GateSingle gate input with 1.31 Ω typical gate resistance-compatible with standard 5–10 Ω external gate resistors.
7–11DrainFive dedicated drain terminals plus mounting base (pin 12), all internally tied to drain for ultra-low loop inductance.
12Mounting BaseExposed drain-connected thermal pad; primary heat path to heatsink-no solder mask required under pad.

Key Features

FeatureDesign Value
Inverted top-side coolingMounting base is drain-connected and thermally optimized for direct heatsink interface-eliminates need for thermal vias or secondary cooling layers.
Low Qrr / high EAS94 nC recovered charge and 1890 mJ avalanche energy enable reliable operation in inductive load switching without snubbers.
JEDEC-qualified CCPAK1212iSOT8005A package ensures second-source availability and standardized reflow footprint-reduces supply chain risk for high-volume designs.
100% avalanche testedEvery unit undergoes unclamped inductive switching test-guarantees ruggedness in motor drive and power converter fault conditions.
High-current pin configuration6 source + 1 gate + 6 drain terminals (including mounting base) support >500 A current sharing with <0.5 nH source loop inductance.

Applications

Battery Protection CircuitBLDC Motor Inverter Stage

Use Scenario: High-current battery disconnect and short-circuit protection in 48 V EV auxiliary systems and UPS modules.

IC Role / Device Role / Timing Role: Main power switch in active OR-ing and reverse-current blocking path-operating in linear and saturated modes during fault response.

Use Value: 505 A continuous rating and 3457 A peak pulsed current allow single-device implementation without paralleling, reducing BOM count and layout complexity.

Use Scenario: Upper and lower switches in 3-phase inverter driving 1–5 kW permanent magnet motors in HVAC compressors and e-bike controllers.

IC Role / Device Role / Timing Role: High-side and low-side switching element in hard-switched PWM stage-switching at 20–50 kHz with synchronous body diode conduction.

Use Value: 94 nC Qr and 77 ns trr minimize commutation losses and voltage overshoot during dead-time transitions.

High-Power OR-ing ModuleIndustrial DC-DC Converter Primary Switch

Use Scenario: Redundant 48 V power supply combining in telecom rectifier shelves and server PSUs.

IC Role / Device Role / Timing Role: Active diode replacement in hot-swap and redundancy management-operating in forward conduction and fast turn-off during fault isolation.

Use Value: 0.72 mΩ RDS(on) at 25 °C reduces forward drop to <36 mV at 50 A, cutting conduction loss by >80% vs. Schottky diodes.

Use Scenario: Primary-side switch in isolated 1.5 kW LLC resonant converter for industrial PLC power supplies.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS)-assisted main switch-subject to high dV/dt and repetitive avalanche stress during resonant transitions.

Use Value: 1890 mJ EAS and 129 A IAS ensure survivability during ZVS boundary conditions where full energy recovery is not achieved.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Infineon IPP020N08N80 V, 2.0 mΩ, TO-220FP package; higher RDS(on), no top-side cooling, 120 A ratingLimited to <150 A continuous; requires heatsink on tab side only; unsuitable for >300 A PCB-mounted designsSelect only when legacy TO-220 footprint is mandatory and current demand is ≤120 A.
STMicroelectronics STP120N80K6800 V, 12 mΩ, TO-247 package; 120 A rating, higher voltage class, no avalanche testingDesigned for 400 V+ mains applications-not optimized for 48 V/60 V bus efficiency or thermal performanceUse only if system requires 800 V blocking; avoid for 80 V applications due to excessive conduction loss.

Compared with IPP020N08N and STP120N80K6, PSMNR90-80CSF delivers 4× higher current density, 5× lower RDS(on), and JEDEC-standardized top-cooling-making it uniquely suited for compact, high-power industrial inverters and battery systems where thermal management and current scalability are critical.

Availability

PSMNR90-80CSF is available at Aetrix Electronics and suitable for battery protection, BLDC motor control, high-power OR-ing, and industrial DC-DC converter designs requiring stable component supply and long-term production continuity.

Supply support for PSMNR90-80CSF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs, ESD protection, and logic ICs.

The NextPower product line targets high-efficiency power conversion in industrial, consumer, and computing applications-specifically engineered for low RDS(on) × QG FOM, rugged avalanche performance, and thermally optimized packages like CCPAK1212i.

FAQ

What is the maximum continuous drain current for PSMNR90-80CSF under real-world PCB mounting conditions?

The datasheet specifies 505 A continuous drain current at Tmb = 25 °C with proper thermal design-validated in application tests using a 25.4 mm² copper area on FR4. Practical current is limited by PCB copper weight, heatsink interface quality, and ambient temperature, not intrinsic device capability.

Does PSMNR90-80CSF require gate resistors for safe operation in hard-switched circuits?

Yes-external gate resistors (typically 5–10 Ω) are recommended to control dI/dt and suppress oscillation during turn-on/turn-off. The device's 1.31 Ω typical gate resistance and 309 nC total gate charge make it sensitive to ringing without proper gate drive damping.

Can PSMNR90-80CSF be used in synchronous rectification mode with its integrated body diode?

Yes-the source-drain diode has 94 nC recovered charge and 77 ns reverse recovery time at 25 °C, enabling use in synchronous rectification. However, its VSD = 0.74 V forward drop at 25 A means conduction loss remains significant compared to ideal synchronous FETs; best practice is to minimize body diode conduction time via precise dead-time control.

Is the CCPAK1212i package compatible with standard reflow soldering profiles?

Yes-Nexperia provides a validated reflow profile for SOT8005A, including stencil thickness (0.1 mm), land pattern (11.85 mm × 11.85 mm exposed pad), and peak temperature (260 °C). The package meets IPC-J-STD-020 moisture sensitivity level 3 and supports lead-free assembly without voiding or delamination.

PSMNR90-80CSFJ Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
12-BESOP (0.370", 9.40mm Width), Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
505A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
0.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
463 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
32115 pF @ 40 V
FET Feature:
-
Power Dissipation (Max):
1.55kW (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
CCPAK1212i

PSMNR90-80CSFJ FAQ

1.How can I place an order for PSMNR90-80CSFJ through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMNR90-80CSFJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMNR90-80CSFJ reliable?

The price and inventory of PSMNR90-80CSFJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMNR90-80CSFJ is usually 5 days.

3.What payment methods are accepted for PSMNR90-80CSFJ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMNR90-80CSFJ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMNR90-80CSFJ?

PSMNR90-80CSFJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMNR90-80CSFJ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMNR90-80CSFJ?

For technical support, including PSMNR90-80CSFJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMNR90-80CSFJ requirements.

6.How does Aetrix verify that PSMNR90-80CSFJ is sourced from the original manufacturer or authorized distributors?

All PSMNR90-80CSFJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMNR90-80CSFJ meets industry standards.

7.What is the process for return or replacement of PSMNR90-80CSFJ?

All PSMNR90-80CSFJ units undergo pre-shipment inspection (PSI). If there is an issue with PSMNR90-80CSFJ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMNR90-80CSFJ part is unused and in its original packaging.

Return procedure for PSMNR90-80CSFJ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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