Nexperia USA Inc. PSMNR90-80CSFJ
- Part No.:
- PSMNR90-80CSFJ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- 12-BESOP (0.370", 9.40mm Width), Exposed Pad
- Datasheet:
-
PSMNR90-80CSFJ.pdf
- Description:
- PSMNR90-80CSF/SOT8005A/CCPAK12
- Quantity:
- Payment:

- Shipping:

Inventory:250
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PSMNR90-80CSF from Nexperia is an 80 V, 0.9 mΩ N-channel MOSFET in CCPAK1212i (SOT8005A) package, qualified to 175 °C junction temperature and rated for 505 A continuous drain current at Tmb = 25 °C. It features low Qrr (94 nC), high avalanche energy rating (1890 mJ), and inverted top-side cooling architecture-designed for high-power BLDC motor control, battery protection, and OR-ing circuits.
For engineers reviewing the PSMNR90-80CSF datasheet, PSMNR90-80CSF pinout, PSMNR90-80CSF application, or PSMNR90-80CSF equivalent, key selection criteria include RDS(on) temperature stability (1.6–2.1 mΩ at 175 °C), gate charge (309 nC typ), thermal resistance to mounting base (0.075 K/W), and JEDEC-qualified CCPAK1212i package compatibility with high-current PCB layouts.
Technical Context
This NextPower MOSFET employs a trench-gate superjunction structure optimized for low RDS(on) × QG figure-of-merit (FOM), enabling high-efficiency switching in hard-switched topologies. Its 12-terminal CCPAK1212i package integrates six parallel source terminals, one gate terminal, and five drain terminals plus mounting base-all electrically connected to drain-supporting >500 A continuous conduction with minimal parasitic inductance.
The device is fully avalanche-rated and 100% tested per IEC 60134, with non-repetitive EAS = 1890 mJ at 129 A and VDS ≤ 80 V. Gate threshold voltage is 3.6 V (min) at –55 °C and 1.52 V (typ) at 175 °C, ensuring robust turn-on margin across industrial temperature range while maintaining low leakage (≤200 µA at 125 °C).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - Maximum blocking voltage compatible with 48 V and 60 V bus systems with safety margin. |
| RDS(on) | 0.72–0.9 mΩ @ 25 °C - Enables <1 W conduction loss at 50 A, critical for high-current power stages. |
| ID(cont) | 505 A @ Tmb = 25 °C - Validated continuous current under real thermal mounting conditions, not theoretical limit. |
| QG(tot) | 309 nC typ - Low gate drive energy requirement supports efficient 100 kHz+ switching with standard gate drivers. |
| Rth(j-mb) | 0.075 K/W - Enables direct heatsink attachment to exposed drain pad for top-side cooling without thermal vias. |
| EAS | 1890 mJ - Withstands unclamped inductive switching events in motor drives and DC-DC converters without failure. |
| Qr | 94 nC - Reduces diode recovery losses and voltage spiking in synchronous rectification and half-bridge freewheeling. |
Pinout & Package
CCPAK1212i (SOT8005A) is a 12 mm × 12 mm × 2.5 mm surface-mount copper clip package with inverted layout: drain-connected mounting base on bottom, source/gate terminals on top side. Optimized for top-side cooling and high-current PCB routing with JEDEC-standard footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–5 | Source | Five parallel low-inductance source connections reduce common-source inductance and improve switching speed. |
| 6 | Gate | Single gate input with 1.31 Ω typical gate resistance-compatible with standard 5–10 Ω external gate resistors. |
| 7–11 | Drain | Five dedicated drain terminals plus mounting base (pin 12), all internally tied to drain for ultra-low loop inductance. |
| 12 | Mounting Base | Exposed drain-connected thermal pad; primary heat path to heatsink-no solder mask required under pad. |
Key Features
| Feature | Design Value |
|---|---|
| Inverted top-side cooling | Mounting base is drain-connected and thermally optimized for direct heatsink interface-eliminates need for thermal vias or secondary cooling layers. |
| Low Qrr / high EAS | 94 nC recovered charge and 1890 mJ avalanche energy enable reliable operation in inductive load switching without snubbers. |
| JEDEC-qualified CCPAK1212i | SOT8005A package ensures second-source availability and standardized reflow footprint-reduces supply chain risk for high-volume designs. |
| 100% avalanche tested | Every unit undergoes unclamped inductive switching test-guarantees ruggedness in motor drive and power converter fault conditions. |
| High-current pin configuration | 6 source + 1 gate + 6 drain terminals (including mounting base) support >500 A current sharing with <0.5 nH source loop inductance. |
Applications
| Battery Protection Circuit | BLDC Motor Inverter Stage |
|---|---|
Use Scenario: High-current battery disconnect and short-circuit protection in 48 V EV auxiliary systems and UPS modules. IC Role / Device Role / Timing Role: Main power switch in active OR-ing and reverse-current blocking path-operating in linear and saturated modes during fault response. Use Value: 505 A continuous rating and 3457 A peak pulsed current allow single-device implementation without paralleling, reducing BOM count and layout complexity. | Use Scenario: Upper and lower switches in 3-phase inverter driving 1–5 kW permanent magnet motors in HVAC compressors and e-bike controllers. IC Role / Device Role / Timing Role: High-side and low-side switching element in hard-switched PWM stage-switching at 20–50 kHz with synchronous body diode conduction. Use Value: 94 nC Qr and 77 ns trr minimize commutation losses and voltage overshoot during dead-time transitions. |
| High-Power OR-ing Module | Industrial DC-DC Converter Primary Switch |
Use Scenario: Redundant 48 V power supply combining in telecom rectifier shelves and server PSUs. IC Role / Device Role / Timing Role: Active diode replacement in hot-swap and redundancy management-operating in forward conduction and fast turn-off during fault isolation. Use Value: 0.72 mΩ RDS(on) at 25 °C reduces forward drop to <36 mV at 50 A, cutting conduction loss by >80% vs. Schottky diodes. | Use Scenario: Primary-side switch in isolated 1.5 kW LLC resonant converter for industrial PLC power supplies. IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS)-assisted main switch-subject to high dV/dt and repetitive avalanche stress during resonant transitions. Use Value: 1890 mJ EAS and 129 A IAS ensure survivability during ZVS boundary conditions where full energy recovery is not achieved. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IPP020N08N | 80 V, 2.0 mΩ, TO-220FP package; higher RDS(on), no top-side cooling, 120 A rating | Limited to <150 A continuous; requires heatsink on tab side only; unsuitable for >300 A PCB-mounted designs | Select only when legacy TO-220 footprint is mandatory and current demand is ≤120 A. |
| STMicroelectronics STP120N80K6 | 800 V, 12 mΩ, TO-247 package; 120 A rating, higher voltage class, no avalanche testing | Designed for 400 V+ mains applications-not optimized for 48 V/60 V bus efficiency or thermal performance | Use only if system requires 800 V blocking; avoid for 80 V applications due to excessive conduction loss. |
Compared with IPP020N08N and STP120N80K6, PSMNR90-80CSF delivers 4× higher current density, 5× lower RDS(on), and JEDEC-standardized top-cooling-making it uniquely suited for compact, high-power industrial inverters and battery systems where thermal management and current scalability are critical.
Availability
PSMNR90-80CSF is available at Aetrix Electronics and suitable for battery protection, BLDC motor control, high-power OR-ing, and industrial DC-DC converter designs requiring stable component supply and long-term production continuity.
Supply support for PSMNR90-80CSF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs, ESD protection, and logic ICs.
The NextPower product line targets high-efficiency power conversion in industrial, consumer, and computing applications-specifically engineered for low RDS(on) × QG FOM, rugged avalanche performance, and thermally optimized packages like CCPAK1212i.
FAQ
What is the maximum continuous drain current for PSMNR90-80CSF under real-world PCB mounting conditions?
The datasheet specifies 505 A continuous drain current at Tmb = 25 °C with proper thermal design-validated in application tests using a 25.4 mm² copper area on FR4. Practical current is limited by PCB copper weight, heatsink interface quality, and ambient temperature, not intrinsic device capability.
Does PSMNR90-80CSF require gate resistors for safe operation in hard-switched circuits?
Yes-external gate resistors (typically 5–10 Ω) are recommended to control dI/dt and suppress oscillation during turn-on/turn-off. The device's 1.31 Ω typical gate resistance and 309 nC total gate charge make it sensitive to ringing without proper gate drive damping.
Can PSMNR90-80CSF be used in synchronous rectification mode with its integrated body diode?
Yes-the source-drain diode has 94 nC recovered charge and 77 ns reverse recovery time at 25 °C, enabling use in synchronous rectification. However, its VSD = 0.74 V forward drop at 25 A means conduction loss remains significant compared to ideal synchronous FETs; best practice is to minimize body diode conduction time via precise dead-time control.
Is the CCPAK1212i package compatible with standard reflow soldering profiles?
Yes-Nexperia provides a validated reflow profile for SOT8005A, including stencil thickness (0.1 mm), land pattern (11.85 mm × 11.85 mm exposed pad), and peak temperature (260 °C). The package meets IPC-J-STD-020 moisture sensitivity level 3 and supports lead-free assembly without voiding or delamination.
PSMNR90-80CSFJ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 12-BESOP (0.370", 9.40mm Width), Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 505A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 0.9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 463 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 32115 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.55kW (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- CCPAK1212i
PSMNR90-80CSFJ FAQ
1.How can I place an order for PSMNR90-80CSFJ through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMNR90-80CSFJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMNR90-80CSFJ reliable?
The price and inventory of PSMNR90-80CSFJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMNR90-80CSFJ is usually 5 days.
3.What payment methods are accepted for PSMNR90-80CSFJ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMNR90-80CSFJ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMNR90-80CSFJ?
PSMNR90-80CSFJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMNR90-80CSFJ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMNR90-80CSFJ?
For technical support, including PSMNR90-80CSFJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMNR90-80CSFJ requirements.
6.How does Aetrix verify that PSMNR90-80CSFJ is sourced from the original manufacturer or authorized distributors?
All PSMNR90-80CSFJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMNR90-80CSFJ meets industry standards.
7.What is the process for return or replacement of PSMNR90-80CSFJ?
All PSMNR90-80CSFJ units undergo pre-shipment inspection (PSI). If there is an issue with PSMNR90-80CSFJ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMNR90-80CSFJ part is unused and in its original packaging.
Return procedure for PSMNR90-80CSFJ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PSMNR90-80CSFJ Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

