Nexperia USA Inc. PSMP057-60YEX

Overview

PSMP057-60YEX from Nexperia is a 60 V, 5.7 A N-channel TrenchMOS logic-level power MOSFET in a SOT-223 (SC-73) surface-mount package, optimized for high-efficiency DC-DC conversion and load switching in industrial power supplies and motor control circuits. It features R_DS(on) ≤ 45 mΩ at V_GS = 10 V and ≤ 60 mΩ at V_GS = 4.5 V, with 100% avalanche-rated ruggedness and AEC-Q101 qualification.

For engineers reviewing the PSMP057-60YEX datasheet, PSMP057-60YEX pinout, PSMP057-60YEX application, or PSMP057-60YEX equivalent, key selection criteria include its logic-level gate drive compatibility, low on-resistance at 4.5 V, thermal performance in SOT-223, and automotive-grade reliability for embedded power management designs.

Technical Context

This MOSFET employs Nexperia's TrenchMOS technology to achieve low R_DS(on) and fast switching with t_on = 12 ns and t_off = 28 ns at I_D = 1 A, V_DD = 30 V. Its gate threshold voltage V_GS(th) ranges from 1.0 V to 2.5 V, enabling robust turn-on with standard 3.3 V or 5 V logic drivers.

The device integrates 100% UIS-tested ruggedness (E_AS = 19 mJ at T_j = 25 °C), supports continuous drain current up to 5.7 A at T_c = 25 °C, and operates across –55 °C to +175 °C junction temperature range - meeting requirements for harsh-environment industrial and automotive power stages.

Key Specifications

Pinout & Package

PSMP057-60YEX is housed in a SOT-223 (SC-73) plastic package with exposed drain pad for thermal dissipation. The package measures 6.7 × 3.7 × 1.8 mm and is compatible with standard reflow profiles (JEDEC J-STD-020).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with DMN601DWKQ-7, PSMP057-60YEX offers higher current rating, automotive qualification, and superior thermal capability in SOT-223; versus IPD60R190P7S, it provides logic-level compatibility and lower switching losses for 24–48 V systems - making it the only drop-in solution for ruggedized, MCU-driven power switching.

Availability

PSMP057-60YEX is available at Aetrix Electronics and suitable for industrial motor drives, automotive body electronics, and smart power outlets requiring stable component supply and long-term lifecycle support.

Supply support for PSMP057-60YEX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, producing over 90 billion units annually with ISO/TS 16949-certified automotive manufacturing.

PSMP057-60YEX belongs to Nexperia's TrenchMOS logic-level power MOSFET product line, engineered specifically for space-constrained, thermally demanding industrial and automotive power switching applications where gate drive simplicity and ruggedness are critical.

FAQ

What is the maximum continuous drain current for PSMP057-60YEX at 100 °C case temperature?

At T_c = 100 °C, the maximum continuous drain current is derated to 3.8 A per the Safe Operating Area (SOA) curve in the official Nexperia datasheet. This reflects thermal limitation of the SOT-223 package under sustained high-temperature conditions, not device failure - proper PCB copper area maintains safe junction temperature.

Does PSMP057-60YEX require a gate resistor for ESD protection or switching control?

A 10 Ω to 47 Ω series gate resistor is recommended to dampen ringing and limit peak gate current during fast switching, but no external ESD protection diode is needed - the device integrates robust gate oxide protection rated to ±2 kV HBM. Resistor value balances switching speed and EMI.

Can PSMP057-60YEX be used in a high-side switch configuration with 3.3 V microcontroller drive?

Yes - with V_GS(th) as low as 1.0 V and R_DS(on) ≤ 60 mΩ at 4.5 V, it fully enhances using a 3.3 V GPIO through a level-shifter or charge pump. Direct 3.3 V drive yields partial enhancement (R_DS(on) ≈ 120 mΩ), acceptable only for low-duty-cycle or low-current applications.

Is the SOT-223 drain tab electrically isolated from the PCB ground plane?

No - the exposed drain tab is electrically connected to Pin 3 (Drain) and must be soldered directly to a dedicated, non-grounded copper pour unless the circuit topology requires drain-to-ground connection. Isolation requires insulating thermal pads or dielectric coatings, which degrade thermal performance.