Nexperia USA Inc. PXN014-100QEJ

Overview

PXN014-100QE from Nexperia is a 100 V, N-channel Trench MOSFET in MLPAK33 (SOT8002-1) package, designed for high-efficiency switching in power conversion stages. It delivers R_DS(on) = 11.8 mΩ at V_GS = 10 V and T_j = 25 °C, supports 44 A continuous drain current at T_mb = 25 °C, and features low Q_G × R_DS(on) figure-of-merit (FOM) and 232 mJ unclamped avalanche energy - enabling robust operation in synchronous rectification and DC-DC primary-side switching.

For engineers reviewing the PXN014-100QE datasheet, PXN014-100QE pinout, PXN014-100QE application, or PXN014-100QE equivalent, this device is selected for logic-level gate drive compatibility, thermally efficient SMD packaging, and validated avalanche ruggedness in flyback, half-bridge, and USB-PD adapter designs.

Technical Context

This NextPower MOSFET uses trench-gate silicon technology optimized for fast switching with minimized gate charge (Q_G(tot) = 33–46 nC at V_DS = 50 V) and low reverse recovery charge (Q_r = 43 nC). Its enhanced body diode exhibits t_rr = 49 ns and V_SD = 0.7–1.2 V at I_S = 1.8 A, supporting high-frequency synchronous rectification without external Schottky replacement.

The MLPAK33 package integrates 4 drain terminals and 3 source terminals to reduce parasitic inductance and improve thermal conduction, achieving R_th(j-mb) = 1.7–2.5 K/W - critical for maintaining junction temperature below 150 °C in compact 48 V DC-DC converters and BLDC motor gate drivers.

Key Specifications

Pinout & Package

MLPAK33 (SOT8002-1) is a thermally enhanced 8-terminal surface-mount package with exposed drain paddle and mini-leads. Its 0.65 mm pitch and 3.3 mm × 3.3 mm footprint enable high-density layout while delivering low junction-to-mounting-base thermal resistance (R_th(j-mb) = 1.7–2.5 K/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPP040N10N5 and SIHF100N10E, PXN014-100QE offers superior thermal performance in minimal area, verified avalanche ruggedness for unclamped inductive loads, and logic-level compatibility - making it optimal for high-density, high-reliability 48 V power stages where layout space and transient robustness are constrained.

Availability

PXN014-100QE is available at Aetrix Electronics and suitable for synchronous rectification, 48 V DC-DC primary switching, and BLDC motor control requiring stable component supply across production volumes and long-lifecycle programs.

Supply support for PXN014-100QE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for power, logic, and analog applications.

PXN014-100QE belongs to the NextPower series - engineered specifically for high-efficiency, high-frequency power conversion in compact consumer, industrial, and computing power supplies.

FAQ

What is the maximum continuous drain current for PXN014-100QE?

The maximum continuous drain current is 44 A at mounting base temperature T_mb = 25 °C with a 6 cm² drain pad on FR4 PCB. Derating applies above 25 °C: normalized current drops to 80% at T_mb = 75 °C and 40% at T_mb = 125 °C per Figure 2 in the datasheet.

Does PXN014-100QE require a gate resistor for stability?

A gate resistor of 5 Ω is recommended for turn-off (per Figure 15 test condition) to control dV/dt and prevent oscillation. The device's low gate resistance (1 Ω typical) and 33–46 nC total gate charge make it sensitive to ringing without proper gate drive impedance matching.

Is PXN014-100QE suitable for use in automotive applications?

No - PXN014-100QE is not AEC-Q101 qualified and lacks automotive-grade screening, temperature validation beyond 150 °C junction, or guaranteed PPAP documentation. Nexperia explicitly states non-automotive qualification in Section 15 of the datasheet.

How does the MLPAK33 package improve thermal performance over standard SO-8?

MLPAK33 achieves R_th(j-mb) = 1.7–2.5 K/W versus ~6–8 K/W for SO-8 due to its exposed drain paddle and four parallel drain terminals. This reduces junction-to-PCB thermal path length and increases copper contact area, lowering steady-state temperature rise by up to 45 °C at 30 W dissipation.