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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PXN017-30QLJ

Name: PXN017-30QLJ
Brand: Nexperia USA Inc.
SKU: PXN017-30QLJ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PXN017-30QLJ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: PXN017-30QLJ.pdf

Description:: PXN017-30QL/SOT8002/MLPAK33

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PXN017-30QL from Nexperia is a 30 V, N-channel enhancement-mode Trench MOSFET in MLPAK33 (SOT8002-1) package, designed for low-side switching in power conversion and battery management. It delivers R_DS(on) = 14.8 mΩ at V_GS = 10 V, 7.9 A, 25 °C; Q_G(tot) = 2.5–3.8 nC; and supports logic-level drive down to 4.5 V.

For engineers reviewing the PXN017-30QL datasheet, PXN017-30QL pinout, PXN017-30QL application, or PXN017-30QL equivalent, key selection criteria include ultra-low gate charge for high-frequency DC/DC efficiency, soft-recovery diode behavior for EMI control, thermal performance on FR4 with 6 cm² drain pad, and validated 8-terminal MLPAK33 layout compatibility.

Technical Context

This device uses Trench MOSFET technology to achieve low R_DS(on) and minimized Q_G/Q_GD, enabling high-efficiency operation in synchronous buck converters and load switches. Its gate threshold voltage (V_GS(th) = 1.2–2.2 V) ensures reliable turn-on with standard 3.3 V or 5 V logic drivers.

The integrated source-drain diode exhibits t_rr = 15 ns and Q_r = 6 nC, supporting soft-recovery operation critical for reducing voltage spikes and ringing in hard-switched topologies. Thermal resistance R_th(j-sp) = 8.3–11.5 K/W enables robust power handling when soldered to a 6 cm² copper drain pad.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V nominal bus systems and transient overvoltage margins.
R_DS(on) @ 10 V	14.8–17.4 mΩ - Enables ≤1.2 W conduction loss at 7.9 A continuous current on FR4 PCB with 6 cm² drain pad.
Q_G(tot)	2.5–3.8 nC - Reduces gate driver power loss and enables >1 MHz switching in compact DC/DC designs.
t_r/t_f	8 ns / 3 ns - Fast edge rates minimize transition losses while maintaining low EMI via soft recovery characteristics.
V_GS(th)	1.2–2.2 V - Ensures full enhancement with 3.3 V microcontroller GPIO without level-shifting circuitry.
I_D (cont)	7.9 A @ T_amb = 25 °C - Sustained current capability suitable for portable battery protection and POL load switches.
E_AS	15 mJ - Avalanche energy rating supports unclamped inductive switching in relay drivers and motor gate control.

Pinout & Package

MLPAK33 (SOT8002-1) is a thermally enhanced 8-terminal surface-mount package measuring 3.3 × 3.3 × 0.8 mm, featuring mini leads, 0.65 mm pitch, and exposed drain terminals optimized for PCB copper area thermal coupling.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source connections reduce bond-wire inductance and improve current sharing in high-di/dt switching.
4	Gate (G)	Single gate input with RG ≈ 3 Ω - enables stable gate drive without external series resistance in most 5 V logic applications.
5, 6, 7, 8	Drain (D)	Four dedicated drain terminals maximize thermal path to PCB copper; all tied internally to die drain metallization.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for gate boosters in 3.3 V/5 V MCU-controlled load switches.
Ultra-low Q_G and Q_GD	Q_G(tot) = 2.5–3.8 nC, Q_GD = 0.7 nC - minimizes switching losses and improves efficiency above 500 kHz in buck regulators.
Soft-recovery body diode	t_rr = 15 ns, Q_r = 6 nC - suppresses voltage overshoot and ringing during freewheeling, easing EMI filter design.
Thermal-enhanced MLPAK33	R_th(j-sp) = 8.3–11.5 K/W - delivers 10.9 W P_tot with 6 cm² drain pad, outperforming SO-8 and Power-SO8 in footprint-constrained layouts.

Applications

DC/DC Buck Converter

Battery Protection Circuit

Use Scenario: High-efficiency 12 V to 3.3 V point-of-load converter in industrial IoT sensor nodes.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 1 MHz with 7.9 A peak current.

Use Value: Ultra-low Q_G and R_DS(on) reduce total power loss to <1.5 W, enabling passive cooling in sealed enclosures.

Use Scenario: Overcurrent and short-circuit protection for 2-cell Li-ion battery packs in power tools.

IC Role / Device Role / Timing Role: Low-side load switch controlled by battery management IC with fast fault response.

Use Value: 15 mJ avalanche rating withstands inductive kickback during hot-plug events; soft-recovery prevents false triggering of protection logic.

USB-C Power Delivery Switch

Automotive Body Control Module

Use Scenario: 5 V/20 V bidirectional power path switch in USB-C PD sink applications.

IC Role / Device Role / Timing Role: Logic-level controlled low-side switch enabling reverse current blocking and fast enable/disable.

Use Value: V_GS(th) range (1.2–2.2 V) ensures clean turn-on with 3.3 V PD controller outputs; low C_iss (350 pF) minimizes gate drive burden.

Use Scenario: 12 V lighting and solenoid control in non-safety-critical automotive body modules.

IC Role / Device Role / Timing Role: Low-side driver for incandescent lamps and small relays with PWM dimming support.

Use Value: 163 A peak drain current handles lamp inrush; MLPAK33's thermal performance sustains 5 A continuous at 100 °C ambient without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N04LS6	R_DS(on) = 1.4 mΩ @ 10 V (lower), but Q_G = 12.5 nC (higher); TO-263 package (larger footprint, higher thermal mass).	Better conduction loss at high current, but slower switching and less suitable for >500 kHz or space-constrained layouts.	Prefer for high-current, low-frequency applications where thermal mass aids reliability; avoid for compact high-frequency DC/DC.
ON Semiconductor NTMFS4C09NT1G	R_DS(on) = 10.5 mΩ @ 10 V; Q_G = 5.2 nC; SO-8 package with higher R_th(j-a) (~60 K/W).	Lower R_DS(on) improves conduction loss, but higher Q_G and inferior thermal resistance limit high-frequency efficiency.	Acceptable for medium-frequency (<300 kHz) load switching; not recommended where MLPAK33's thermal advantage or Q_G reduction is critical.

Compared with BSC014N04LS6 and NTMFS4C09NT1G, PXN017-30QL uniquely balances ultra-low Q_G, logic-level compatibility, and MLPAK33's superior thermal resistance-making it optimal for compact, high-frequency, thermally constrained 3.3–5 V control-driven power stages.

Availability

PXN017-30QL is available at Aetrix Electronics and suitable for DC/DC conversion, battery management, and low-side load switching requiring stable component supply, consistent parametric performance across production lots, and long-term industrial lifecycle support.

Supply support for PXN017-30QL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-qualified components.

PXN017-30QL belongs to Nexperia's TrenchMOS portfolio, engineered specifically for high-efficiency, high-density power management in consumer, industrial, and computing applications where thermal and switching performance are critical.

FAQ

What is the maximum continuous drain current for PXN017-30QL at 100 °C ambient temperature?

The maximum continuous drain current is 5 A at T_amb = 100 °C with device mounted on an FR4 PCB having a 6 cm² drain pad. This value is derived from the normalized current derating curve (Figure 2) and reflects thermal limits under sustained operation-not pulse or transient conditions.

Does PXN017-30QL have a built-in body diode, and what are its key recovery characteristics?

Yes, it integrates a source-drain body diode with V_SD = 0.7–1.2 V at I_S = 1.6 A and T_j = 25 °C. Its reverse recovery time t_rr is 15 ns, recovered charge Q_r is 6 nC, and soft-recovery behavior reduces voltage ringing-critical for EMI-sensitive DC/DC designs.

Can PXN017-30QL be driven directly by a 3.3 V microcontroller GPIO without a gate driver?

Yes. With V_GS(th) = 1.2–2.2 V and guaranteed R_DS(on) ≤ 23.1 mΩ at V_GS = 4.5 V, the device achieves full enhancement using standard 3.3 V logic. Gate resistance is ~3 Ω, so no external series resistor is needed for stability in typical load-switch applications.

What is the recommended PCB layout for optimal thermal performance of the MLPAK33 package?

A 6 cm² copper area connected to all four drain terminals (pins 5–8) is required to achieve the specified R_th(j-sp) = 8.3–11.5 K/W and P_tot = 10.9 W. The footprint must follow Nexperia's reflow stencil guidelines (0.1 mm thickness, 0.50 mm solder paste openings) per Figure 20 in the datasheet.

PXN017-30QLJ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 7.9A (Ta), 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 17.4mOhm @ 7.9A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 7.7 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 350 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.7W (Ta), 10.9W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: MLPAK33

PXN017-30QLJ FAQ

1.How can I place an order for PXN017-30QLJ through Aetrix?

Please submit a Request for Quotation (RFQ) for PXN017-30QLJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PXN017-30QLJ reliable?

The price and inventory of PXN017-30QLJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PXN017-30QLJ is usually 5 days.

3.What payment methods are accepted for PXN017-30QLJ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PXN017-30QLJ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PXN017-30QLJ?

PXN017-30QLJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PXN017-30QLJ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PXN017-30QLJ?

For technical support, including PXN017-30QLJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PXN017-30QLJ requirements.

6.How does Aetrix verify that PXN017-30QLJ is sourced from the original manufacturer or authorized distributors?

All PXN017-30QLJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PXN017-30QLJ meets industry standards.

7.What is the process for return or replacement of PXN017-30QLJ?

All PXN017-30QLJ units undergo pre-shipment inspection (PSI). If there is an issue with PXN017-30QLJ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PXN017-30QLJ part is unused and in its original packaging.

Return procedure for PXN017-30QLJ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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