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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PXN6R7-30QLJ

Name: PXN6R7-30QLJ
Brand: Nexperia USA Inc.
SKU: PXN6R7-30QLJ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PXN6R7-30QLJ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: PXN6R7-30QLJ.pdf

Description:: PXN6R7-30QL/SOT8002/MLPAK33

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PXN6R7-30QLJ from Nexperia is a 30 V, N-channel enhancement-mode Trench MOSFET in MLPAK33 (SOT8002-1) package, designed for low-side switching in power conversion and battery management systems. It delivers R_DS(on) = 5.7 mΩ at V_GS = 10 V, 12.7 A, supports logic-level drive (V_GS(th) = 1.2–2.2 V), and features ultra-low Q_G (7.9–11.9 nC) for high-efficiency operation up to 1 MHz switching.

For engineers reviewing the PXN6R7-30QLJ datasheet, PXN6R7-30QLJ pinout, PXN6R7-30QLJ application, or PXN6R7-30QLJ equivalent, key selection criteria include its 3.3 × 3.3 mm thermal-enhanced MLPAK33 footprint, 87 A peak drain current capability, soft-recovery body diode (t_rr = 15 ns), and suitability for space-constrained DC-DC converters requiring low EMI and high thermal performance on FR4 PCBs.

Technical Context

This MOSFET employs Trench MOSFET technology with optimized gate charge distribution: Q_GD = 2.1 nC and Q_GS = 2.8 nC at V_GS = 4.5 V, enabling fast, controlled turn-on/turn-off (t_d(on) = 5 ns, t_f = 3 ns) while minimizing voltage ringing. Its R_DS(on) exhibits low temperature coefficient - only 1.5× increase from 25 °C to 150 °C - supporting stable conduction in thermally demanding loads.

The integrated source-drain diode provides low V_SD = 0.7–1.2 V at 1.5 A and fast reverse recovery (Q_r = 6 nC), making it suitable for synchronous rectification and freewheeling paths where low loss and minimal shoot-through risk are critical. Thermal resistance R_th(j-sp) = 2.1–3.1 K/W enables high continuous current derating even without large copper pads.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum drain-source voltage - defines safe blocking capability in 24 V bus and 12 V automotive auxiliary circuits.
R_DS(on) @ V_GS = 10 V	5.7–6.7 mΩ - enables ≤150 mW conduction loss at 12.7 A, reducing heatsink requirements in compact DC-DC modules.
Q_G(tot)	7.9–11.9 nC - allows efficient gate driving with low-power controllers (e.g., microcontroller GPIO or dedicated drivers like NX3P120), minimizing driver losses at >500 kHz.
t_r/t_f	8 ns / 3 ns - ensures sharp edge control and reduced switching transition time, lowering overlap losses in hard-switched topologies.
I_D (continuous)	12.7 A @ T_amb = 25 °C - supports sustained load currents typical of USB PD adapters, e-bike battery switches, and industrial PLC I/O stages.
E_AS	34.5 mJ - provides single-pulse avalanche ruggedness sufficient for inductive load switching without external snubbers in non-critical applications.
R_th(j-sp)	2.1–3.1 K/W - enables direct thermal coupling to PCB copper, achieving >40 W power dissipation with standard 6 cm² drain pad per JEDEC JESD51-2.

Pinout & Package

MLPAK33 (SOT8002-1) is a thermally enhanced 8-terminal surface-mount plastic package measuring 3.3 × 3.3 × 0.8 mm with 0.65 mm pitch, featuring four drain terminals (pins 5–8), three source terminals (pins 1–3), and one gate terminal (pin 4). The exposed drain paddle improves thermal transfer to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Three parallel low-inductance source connections reduce common-source inductance and improve gate drive stability during fast switching.
4	Gate	Single gate input with RG ≈ 1.2 Ω - compatible with standard 5 V logic drivers; layout must minimize loop inductance to suppress oscillation.
5, 6, 7, 8	Drain	Four drain terminals tied to internal die paddle - enable high-current routing and low thermal resistance path to PCB copper pour.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.2–2.2 V - enables direct interface with 3.3 V or 5 V microcontrollers without level-shifting circuitry.
Ultra-low Q_G and Q_GD	Q_G(tot) = 7.9–11.9 nC, Q_GD = 2.1 nC - reduces gate driver power consumption and improves efficiency in high-frequency SMPS (>1 MHz).
Soft-recovery body diode	t_rr = 15 ns, Q_r = 6 nC - minimizes reverse recovery spikes and EMI in buck converters and half-bridge freewheeling paths.
Low spiking and ringing	Crss = 66 pF, Ciss = 1150 pF - suppresses parasitic oscillations during switching transitions, easing EMI filter design.
Thermal-enhanced MLPAK33	R_th(j-sp) = 2.1–3.1 K/W - achieves 40.3 W P_tot at T_sp = 25 °C, outperforming comparable SO-8 and Power-SO8 packages by >2× in thermal resistance.

Applications

DC-DC Converters

Battery Management Systems

Use Scenario: Synchronous rectifier in 12 V → 5 V/3.3 V buck converter for industrial IoT gateway.

IC Role / Device Role / Timing Role: Low-side switch operating at 600 kHz with 50% duty cycle, handling 10 A continuous output current.

Use Value: 5.7 mΩ R_DS(on) limits conduction loss to <120 mW, while soft-recovery diode eliminates need for external Schottky clamp.

Use Scenario: Protection FET in 3-cell Li-ion pack (12.6 V max) for power tools.

IC Role / Device Role / Timing Role: High-side or low-side load switch controlling charge/discharge path, triggered by battery protection IC.

Use Value: Logic-level threshold enables direct drive from 3.3 V protection ASIC; 87 A peak rating withstands motor stall surges.

Low-Side Load Switching

Switching Power Supplies

Use Scenario: Hot-swap controller for 24 V industrial sensor node with inrush limiting.

IC Role / Device Role / Timing Role: Controlled turn-on switch with slew-rate limited gate drive to limit dI/dt during insertion.

Use Value: Ultra-low Q_G allows precise gate voltage ramping using simple RC network; low R_DS(on) avoids voltage drop under full load.

Use Scenario: Primary-side switch in isolated flyback adapter for medical auxiliary power (24 V input, 5 V/2 A output).

IC Role / Device Role / Timing Role: Self-oscillating or PWM-controlled switch operating at 100–200 kHz with 15 V V_DS stress.

Use Value: 30 V rating provides 2× margin over 24 V rail; low Crss minimizes capacitive coupling noise into feedback circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NTMFS4C06NT1G	R_DS(on) = 5.2 mΩ @ 10 V but larger SO-8 package (5 × 6 mm); Q_G = 13.5 nC - higher gate drive loss.	Larger footprint limits use in ultra-compact designs; higher thermal resistance (R_th(j-a) ≈ 50 K/W) requires more PCB copper.	Select when legacy SO-8 layout compatibility is required and board area permits larger package.
Infineon BSC014N04LS6	R_DS(on) = 1.4 mΩ @ 10 V but rated for 40 V; Q_G = 22 nC - significantly higher switching loss at same frequency.	Over-spec'd voltage rating increases cost and silicon area; unsuitable where 30 V margin is sufficient and gate drive capability is constrained.	Select only if future-proofing for 36 V nominal systems is mandatory and higher gate drive power is acceptable.

Compared with NTMFS4C06NT1G and BSC014N04LS6, PXN6R7-30QLJ offers optimal balance of compact MLPAK33 footprint, low gate charge, and thermally efficient package - delivering superior power density and EMI performance in space- and efficiency-critical 24 V power stages.

Availability

PXN6R7-30QLJ is available at Aetrix Electronics and suitable for DC-DC converters, battery management systems, and low-side load switching applications requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for PXN6R7-30QLJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and energy-efficient power solutions.

PXN6R7-30QLJ belongs to Nexperia's TrenchMOS portfolio - engineered specifically for high-efficiency, high-frequency power switching in consumer, industrial, and computing applications where thermal performance and gate drive simplicity are critical.

FAQ

What is the maximum continuous drain current for PXN6R7-30QLJ at 100 °C ambient temperature?

At T_amb = 100 °C, the normalized continuous drain current is 60% of the 25 °C rating. Since I_D = 12.7 A at 25 °C, the derated value is 7.6 A. This assumes mounting on an FR4 PCB with 6 cm² drain pad per JEDEC JESD51-2 conditions - actual current depends on PCB layout and airflow.

Does PXN6R7-30QLJ have avalanche capability, and is it rated for repetitive operation?

PXN6R7-30QLJ is characterized for non-repetitive avalanche energy E_AS = 34.5 mJ at T_j(init) = 25 °C, ID = 2.3 A, unclamped condition. It is not rated for repetitive avalanche operation; sustained inductive switching must be managed via snubbers or topology selection to avoid junction overheating.

Can PXN6R7-30QLJ be used as a high-side switch with 5 V gate drive?

No - PXN6R7-30QLJ is an N-channel MOSFET requiring gate voltage ≥ V_DS + V_GS(th) for full enhancement. As a high-side switch, it needs a gate driver that generates >30 V above source potential. For 5 V high-side control, a P-channel device (e.g., PMV31XNR) or N-channel with bootstrap driver is required.

What is the recommended solder paste stencil thickness for MLPAK33 (SOT8002-1) reflow?

The manufacturer recommends a 0.1 mm stencil thickness for the MLPAK33 package. This ensures optimal solder volume for all eight terminals while preventing bridging between closely spaced pins (0.65 mm pitch) and maintaining reliable thermal pad wetting on the exposed drain paddle.

PXN6R7-30QLJ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 12.7A (Ta), 62A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.7mOhm @ 12.7A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24.8 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1150 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.7W (Ta), 40.3W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: MLPAK33

PXN6R7-30QLJ FAQ

1.How can I place an order for PXN6R7-30QLJ through Aetrix?

Please submit a Request for Quotation (RFQ) for PXN6R7-30QLJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PXN6R7-30QLJ reliable?

The price and inventory of PXN6R7-30QLJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PXN6R7-30QLJ is usually 5 days.

3.What payment methods are accepted for PXN6R7-30QLJ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PXN6R7-30QLJ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PXN6R7-30QLJ?

PXN6R7-30QLJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PXN6R7-30QLJ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PXN6R7-30QLJ?

For technical support, including PXN6R7-30QLJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PXN6R7-30QLJ requirements.

6.How does Aetrix verify that PXN6R7-30QLJ is sourced from the original manufacturer or authorized distributors?

All PXN6R7-30QLJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PXN6R7-30QLJ meets industry standards.

7.What is the process for return or replacement of PXN6R7-30QLJ?

All PXN6R7-30QLJ units undergo pre-shipment inspection (PSI). If there is an issue with PXN6R7-30QLJ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PXN6R7-30QLJ part is unused and in its original packaging.

Return procedure for PXN6R7-30QLJ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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