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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PXN8R3-30QLJ

Name: PXN8R3-30QLJ
Brand: Nexperia USA Inc.
SKU: PXN8R3-30QLJ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PXN8R3-30QLJ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: PXN8R3-30QLJ.pdf

Description:: PXN8R3-30QL/SOT8002/MLPAK33

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Product details

Overview

PXN8R3-30QLJ from Nexperia is a 30 V, N-channel enhancement-mode Trench MOSFET in MLPAK33 (SOT8002-1) package, designed for low-side switching in power conversion and battery management. It delivers R_DS(on) = 7.1 mΩ @ V_GS = 10 V, 11.4 A, supports logic-level drive (V_GS(th) = 1.7 V typ), and features ultra-low Q_G = 5.1 nC and Q_GD = 1.3 nC for high-frequency DC-DC operation.

For engineers reviewing the PXN8R3-30QLJ datasheet, PXN8R3-30QLJ pinout, PXN8R3-30QLJ application, or PXN8R3-30QLJ equivalent, key selection criteria include its 8-pin MLPAK33 thermal-enhanced footprint, source-gate-drain terminal configuration, low EMI switching behavior, and suitability for compact, high-efficiency load-switching designs requiring <10 ns turn-on delay and soft-recovery diode performance.

Technical Context

This MOSFET employs Trench technology to achieve low on-resistance and fast switching with minimized gate charge. Its triple-source (pins 1–3), quad-drain (pins 5–8), and single-gate (pin 4) layout enables low-inductance, high-current routing and efficient heat spreading through the exposed drain pad.

The device integrates a robust body diode with t_rr = 15 ns and Q_r = 6 nC, supporting synchronous rectification and flyback recovery without external snubbing. Thermal resistance R_th(j-sp) = 7 K/W (typ) ensures stable operation up to 150 °C junction temperature under PCB-mounted conditions with 6 cm² drain pad.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum - defines safe blocking voltage in low-voltage power rails (e.g., 12 V/24 V systems)
R_DS(on) @ 10 V	7.1 mΩ typical - enables ≤1 W conduction loss at 11.4 A continuous current
Q_G(tot)	5.1 nC typical - reduces gate drive power and allows >1 MHz switching with low-power controllers
t_d(on)	5 ns typical - supports precise timing control in high-speed PWM and digital load switching
I_D (cont)	11.4 A @ T_amb = 25 °C - rated for sustained current in thermally constrained PCB layouts
V_GS(th)	1.7 V typical - ensures reliable turn-on with 3.3 V or 5 V logic-level microcontrollers
t_rr	15 ns typical - minimizes reverse recovery losses and voltage spikes in inductive switching

Pinout & Package

Package: MLPAK33 (SOT8002-1), 3.3 × 3.3 × 0.8 mm surface-mount plastic package with thermal-enhanced leadframe and exposed drain pad for low R_th(j-sp).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Three parallel source terminals reduce bond-wire inductance and improve current sharing in high-di/dt applications
4	Gate	Single gate input with RG = 2.3 Ω (typ) - enables stable drive without external gate resistor in most 3.3/5 V logic interfaces
5, 6, 7, 8	Drain	Four drain terminals connected to internal thermal pad - maximizes heat transfer to PCB copper and lowers R_th(j-a) to 24 K/W (typ)

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.2–2.2 V range ensures full enhancement with standard MCU GPIOs (3.3 V/5 V)
Ultra-low Q_G and Q_GD	5.1 nC total / 1.3 nC gate-drain charge - cuts switching losses by >30% vs. comparable 30 V MOSFETs
Soft-recovery body diode	t_rr = 15 ns, Q_r = 6 nC - suppresses voltage overshoot and EMI during inductive turn-off
MLPAK33 thermal design	R_th(j-sp) = 7 K/W (typ) - sustains 12.5 W dissipation with minimal board area and no heatsink

Applications

Battery Protection Circuit

DC-DC Buck Converter

Use Scenario: Reverse-current blocking and overcurrent cutoff in portable Li-ion battery packs.

IC Role / Device Role / Timing Role: Low-side load switch controlling discharge path between battery and system load.

Use Value: 7.1 mΩ R_DS(on) limits voltage drop to <80 mV at 11 A, preserving battery runtime and enabling accurate current sensing.

Use Scenario: Synchronous rectifier in 12 V → 3.3 V buck converter for embedded microcontroller supply.

IC Role / Device Role / Timing Role: High-side or low-side power switch operating at 500 kHz–1 MHz PWM frequency.

Use Value: 5.1 nC Q_G and 5 ns t_d(on) allow clean edge transitions with minimal dead-time penalty and reduced gate driver complexity.

USB-C Power Delivery Switch

Industrial PLC I/O Module

Use Scenario: Load switching for programmable 5–20 V output rails in USB PD sink applications.

IC Role / Device Role / Timing Role: Logic-controlled low-side switch enabling/disabling downstream power paths.

Use Value: Triple-source terminals and soft-recovery diode eliminate need for external freewheeling diode and reduce board space by >25%.

Use Scenario: Solid-state replacement for electromechanical relays driving 24 V DC solenoids and indicators.

IC Role / Device Role / Timing Role: Robust low-side driver handling repetitive inductive turn-off transients.

Use Value: 25 mJ unclamped avalanche energy rating and 293 A peak current capability ensure reliability under worst-case inductive kick events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-side switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ONsemi NTMFS5C670NL	Higher R_DS(on) = 9.5 mΩ @ 10 V; larger Power56 package (5 × 6 mm)	Lower power density; requires more PCB area and higher thermal margin	Preferred where legacy Power56 footprint compatibility is required
Infineon BSC014N04LS6	Lower Q_G = 4.5 nC but higher V_GS(th) = 2.2 V min; same 3.3 × 3.3 mm PQFN	Marginally slower turn-on at 3.3 V drive; tighter gate threshold distribution	Chosen when minimizing gate drive loss outweighs logic-level compatibility needs

Compared with NTMFS5C670NL and BSC014N04LS6, PXN8R3-30QLJ offers the best balance of logic-level drive assurance, ultra-low Q_G, and compact MLPAK33 footprint-making it optimal for space-constrained, high-frequency, and MCU-driven load-switching designs.

Availability

PXN8R3-30QLJ is available at Aetrix Electronics and suitable for battery management, DC-DC conversion, and industrial low-side load switching requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for PXN8R3-30QLJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-qualified components.

This device belongs to Nexperia's TrenchMOS logic-level power MOSFET product line, engineered specifically for efficiency-critical, space-constrained power switching in consumer, industrial, and computing applications.

FAQ

What is the maximum continuous drain current for PXN8R3-30QLJ at 100 °C ambient temperature?

The maximum continuous drain current is 7.2 A at T_amb = 100 °C with standard FR4 PCB mounting (single-sided copper, 6 cm² drain pad). This derating reflects thermal limits-not electrical degradation-and is validated per IEC 60134 limiting values.

Does PXN8R3-30QLJ require a gate resistor for stable switching?

A gate resistor is not mandatory due to its low intrinsic gate resistance (2.3 Ω typ) and optimized gate charge profile. However, a 2.2–10 Ω series resistor is recommended to damp ringing in high-di/dt layouts or when driving from weak GPIOs, especially above 500 kHz.

Can PXN8R3-30QLJ be used in avalanche mode for inductive load protection?

Yes-it is rated for 25 mJ non-repetitive drain-source avalanche energy (T_j(init) = 25 °C, I_D = 1.7 A). This supports single-event inductive turn-off protection but does not qualify it for repetitive avalanche operation; external clamping remains advised for sustained stress.

How does the MLPAK33 package improve thermal performance versus standard SO-8?

The MLPAK33 exposes the drain directly to the PCB via an integrated thermal pad, achieving R_th(j-sp) = 7 K/W (typ)-over 3× better than SO-8's ~25 K/W. Its 3.3 × 3.3 mm footprint also saves >50% board area while maintaining 12.5 W power dissipation capability.

PXN8R3-30QLJ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 11.4A (Ta), 31A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.3mOhm @ 11.4A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15.9 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 760 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.7W (Ta), 12.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: MLPAK33

PXN8R3-30QLJ FAQ

1.How can I place an order for PXN8R3-30QLJ through Aetrix?

Please submit a Request for Quotation (RFQ) for PXN8R3-30QLJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PXN8R3-30QLJ reliable?

The price and inventory of PXN8R3-30QLJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PXN8R3-30QLJ is usually 5 days.

3.What payment methods are accepted for PXN8R3-30QLJ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PXN8R3-30QLJ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PXN8R3-30QLJ?

PXN8R3-30QLJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PXN8R3-30QLJ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PXN8R3-30QLJ?

For technical support, including PXN8R3-30QLJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PXN8R3-30QLJ requirements.

6.How does Aetrix verify that PXN8R3-30QLJ is sourced from the original manufacturer or authorized distributors?

All PXN8R3-30QLJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PXN8R3-30QLJ meets industry standards.

7.What is the process for return or replacement of PXN8R3-30QLJ?

All PXN8R3-30QLJ units undergo pre-shipment inspection (PSI). If there is an issue with PXN8R3-30QLJ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PXN8R3-30QLJ part is unused and in its original packaging.

Return procedure for PXN8R3-30QLJ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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