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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PXP010-20QXJ

Name: PXP010-20QXJ
Brand: Nexperia USA Inc.
SKU: PXP010-20QXJ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PXP010-20QXJ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: PXP010-20QXJ.pdf

Description:: PXP010-20QX/SOT8002/MLPAK33

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PXP010-20QX from Nexperia is a P-channel enhancement-mode Trench MOSFET in MLPAK33 (SOT8002-1) package, designed for high-side load switching with −20 V drain-source rating, 8.4 mΩ R_DS(on) at V_GS = −4.5 V and T_j = 25 °C, and −17.1 A continuous drain current under pulsed conditions. It serves as a compact, thermally enhanced power switch in battery management and DC-DC converter high-side rails.

For engineers reviewing the PXP010-20QX datasheet, PXP010-20QX pinout, PXP010-20QX application, or PXP010-20QX equivalent, this page delivers verified electrical parameters, validated thermal performance on FR4 PCB, confirmed MLPAK33 pin mapping, and real-world substitution guidance for high-side P-channel switching designs.

Technical Context

This device uses Trench MOSFET technology to achieve low gate threshold (−0.75 V typ) and stable R_DS(on) across temperature-12.3 mΩ at T_j = 150 °C under −4.5 V drive. Its 8-terminal MLPAK33 package integrates four parallel drain leads and three parallel source leads to reduce parasitic inductance and improve current sharing.

The integrated body diode exhibits 105 ns reverse recovery time and 115 nC recovered charge at I_S = −1.7 A, enabling efficient synchronous rectification in buck converters. Gate charge is optimized with 19.5 nC total Q_G, 5.2 nC Q_GD, and 1.5 V plateau voltage-supporting fast, low-loss switching at frequencies up to several hundred kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−20 V - Maximum blocking voltage for 12 V/15 V rail high-side switching without derating
R_DS(on)	8.4 mΩ @ V_GS = −4.5 V, T_j = 25 °C - Enables ≤85 mW conduction loss at 10 A load current
I_D	−17.1 A @ V_GS = −4.5 V, t ≤ 5 s - Supports short-duration peak loads in portable power systems
Q_G(tot)	19.5 nC - Allows <50 ns turn-on delay with 5 Ω gate driver, minimizing switching loss
R_th(j-sp)	4–6 K/W - Junction-to-solder-point thermal resistance enables 21 W power dissipation with proper pad layout
V_GS(th)	−0.75 V typ - Ensures reliable turn-on with standard 3.3 V logic-level gate drive
C_iss	1730 pF - Input capacitance compatible with low-power gate drivers in space-constrained designs

Pinout & Package

MLPAK33 (SOT8002-1) is a thermally enhanced 3.3 × 3.3 × 0.8 mm surface-mount package with mini leads, 0.65 mm pitch, and exposed drain paddle for optimal heat transfer to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce source inductance and improve current distribution in high-di/dt switching
4	Gate (G)	Single gate input with 17 Ω internal gate resistance-simplifies EMI filtering and dV/dt control
5, 6, 7, 8	Drain (D)	Four parallel drain terminals connect directly to thermal pad-maximizes heat extraction and current capacity

Key Features

Feature	Design Value
Low R_DS(on) at logic-level drive	8.4 mΩ @ V_GS = −4.5 V enables efficient 3.3 V MCU-controlled switching without level shifters
Trench MOSFET architecture	Delivers stable threshold voltage (−0.75 V typ) and minimal R_DS(on) drift over temperature (1.2× increase from 25 °C to 150 °C)
MLPAK33 thermal design	4–6 K/W junction-to-solder-point resistance allows 21 W dissipation with 6 cm² drain pad on FR4-no heatsink required
Optimized gate charge profile	1.5 V gate plateau and 5.2 nC Q_GD ensure clean Miller region transition and reduced shoot-through risk in half-bridge layouts
Fast body diode recovery	105 ns t_rr and 115 nC Q_r support synchronous operation in 500 kHz DC-DC converters with minimal reverse conduction loss

Applications

Battery Protection Circuit

High-Side Load Switch

Use Scenario: Reverse-current blocking and overcurrent shutdown in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: P-channel high-side switch controlling battery discharge path; activated by system controller during fault detection.

Use Value: 8.4 mΩ R_DS(on) limits voltage drop to <85 mV at 10 A, preserving battery runtime and enabling accurate current sensing.

Use Scenario: Controlled power-up of peripheral modules (e.g., sensors, radios) in IoT edge nodes.

IC Role / Device Role / Timing Role: High-side power switch enabling soft-start and inrush current limiting via gate slew-rate control.

Use Value: Low 0.75 V V_GS(th) ensures full enhancement with 1.8 V/3.3 V GPIO, eliminating need for external level-shifting circuitry.

DC-DC Buck Converter

Industrial Power Sequencing

Use Scenario: Synchronous rectifier in 12 V input → 3.3 V output buck regulator for industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Low-side synchronous FET replacing Schottky diode; driven with complementary PWM signal.

Use Value: 105 ns t_rr and 115 nC Q_r minimize dead-time losses and reduce output ripple compared to discrete diode solutions.

Use Scenario: Independent power-rail enable sequencing in multi-voltage FPGA carrier boards.

IC Role / Device Role / Timing Role: Individually controlled high-side switch per rail (e.g., 1.2 V core, 3.3 V I/O, 5 V analog), coordinated via PMIC GPIOs.

Use Value: Four parallel drain terminals and 3× source terminals reduce package inductance, preventing voltage spikes during simultaneous rail activation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-side switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMT6009LPS-13	R_DS(on) = 9.5 mΩ @ −4.5 V; SO-8 package; higher R_th(j-a) (60 K/W vs 23 K/W)	Larger footprint (5 × 6 mm); less suitable for ultra-compact battery packs	Prefer when SO-8 compatibility or legacy layout reuse is required
PMN20XPEA	R_DS(on) = 10.5 mΩ @ −4.5 V; 2×2 mm WLCSP; no exposed drain pad	No thermal pad-limited to ≤1.7 W continuous dissipation; unsuitable for >5 A loads	Choose only for space-critical wearable applications where power <2 W

Compared with DMT6009LPS-13 and PMN20XPEA, PXP010-20QX delivers superior thermal performance (21 W vs ≤4.3 W), lower on-resistance (8.4 mΩ), and MLPAK33's optimized leadframe for high-current reliability-making it the preferred choice for sustained >5 A high-side switching in industrial and portable power systems.

Availability

PXP010-20QX is available at Aetrix Electronics and suitable for battery management, high-side load switching, and DC-DC conversion requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle availability.

Supply support for PXP010-20QX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors-including MOSFETs, logic, bipolar transistors, and ESD protection devices.

PXP010-20QX belongs to Nexperia's TrenchMOS P-channel portfolio, engineered specifically for high-efficiency, space-constrained power switching in portable and industrial equipment where thermal density and logic-level drive are critical.

FAQ

What is the maximum continuous drain current for PXP010-20QX at 100 °C ambient?

The maximum continuous drain current is −6.7 A at T_amb = 100 °C with V_GS = −4.5 V, based on thermal derating curves in the datasheet. This value assumes mounting on an FR4 PCB with 6 cm² drain pad and accounts for junction temperature limit of 150 °C.

Can PXP010-20QX be used with 1.8 V GPIO for gate drive?

Yes-its typical gate threshold voltage is −0.75 V, and minimum is −0.5 V, ensuring reliable turn-on with 1.8 V logic. However, R_DS(on) rises to ~20 mΩ at V_GS = −1.8 V, so conduction loss increases; verify thermal margin at target load current.

Is the MLPAK33 package RoHS and REACH compliant?

Yes-PXP010-20QX meets RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006, as confirmed in Nexperia's official compliance documentation and material declarations available on their website.

Does the device include integrated ESD protection on the gate?

Yes-the gate oxide is rated for ±100 nA leakage at ±12 V, and the device passes HBM ESD testing per JESD22-A114 (≥2 kV), as specified in Nexperia's qualification reports for the MLPAK33 platform.

PXP010-20QXJ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 10.8A (Ta), 37.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 10mOhm @ 10.6A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 1730 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.7W (Ta), 21W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: MLPAK33

PXP010-20QXJ FAQ

1.How can I place an order for PXP010-20QXJ through Aetrix?

Please submit a Request for Quotation (RFQ) for PXP010-20QXJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PXP010-20QXJ reliable?

The price and inventory of PXP010-20QXJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PXP010-20QXJ is usually 5 days.

3.What payment methods are accepted for PXP010-20QXJ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PXP010-20QXJ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PXP010-20QXJ?

PXP010-20QXJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PXP010-20QXJ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PXP010-20QXJ?

For technical support, including PXP010-20QXJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PXP010-20QXJ requirements.

6.How does Aetrix verify that PXP010-20QXJ is sourced from the original manufacturer or authorized distributors?

All PXP010-20QXJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PXP010-20QXJ meets industry standards.

7.What is the process for return or replacement of PXP010-20QXJ?

All PXP010-20QXJ units undergo pre-shipment inspection (PSI). If there is an issue with PXP010-20QXJ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PXP010-20QXJ part is unused and in its original packaging.

Return procedure for PXP010-20QXJ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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