Nexperia USA Inc. PXP018-30QLJ

Overview

PXP018-30QL from Nexperia is a P-channel enhancement-mode Trench MOSFET in MLPAK33 (SOT8002-1) package, designed for high-side load switching with −30 V drain-source rating, 13.5 mΩ R_DS(on) at V_GS = −10 V, and −11.7 A continuous drain current at T_amb = 25 °C. It enables compact, thermally efficient power control in battery management and DC-DC converters.

For engineers reviewing the PXP018-30QL datasheet, PXP018-30QL pinout, PXP018-30QL application, or PXP018-30QL equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = −1.5 V typ), low thermal resistance to solder point (R_th(j-sp) = 4–8 K/W), and 8-terminal source-gate-drain terminal configuration optimized for PCB copper area utilization.

Technical Context

This MOSFET uses Trench process technology to achieve low on-resistance and fast switching performance. Its gate threshold voltage (−1.5 V typ) ensures reliable turn-on with standard 3.3 V or 5 V logic controllers, and its integrated body diode supports bidirectional current handling in synchronous rectification and reverse polarity protection circuits.

The device features an 8-pin MLPAK33 package with triple-source, single-gate, and quadruple-drain terminals - enabling low-inductance, high-current routing and enhanced thermal conduction via the large drain pad. Thermal design is supported by specified R_th(j-sp) = 4–8 K/W and normalized derating curves up to 150 °C junction temperature.

Key Specifications

Pinout & Package

MLPAK33 (SOT8002-1) is a thermally enhanced 3.3 × 3.3 × 0.8 mm surface-mount plastic package with mini leads, 0.65 mm pitch, and exposed drain pad for optimal heat dissipation. The 8-terminal layout prioritizes current-carrying capacity and thermal path integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-side switching applications.

Compared with DMG2305U-7, PXP018-30QL delivers 3× lower R_DS(on) in half the footprint; versus PSMN2R0-30PL, it trades 10× lower gate charge for 10× higher on-resistance - making it optimal for space-constrained, medium-current, high-frequency switching where thermal budget is tight.

Availability

PXP018-30QL is available at Aetrix Electronics and suitable for high-side load switching, battery management, and DC-DC conversion requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle assurance.

Supply support for PXP018-30QL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-qualified components.

The PXP018-30QL belongs to Nexperia's TrenchMOS portfolio - engineered for efficiency-critical power switching in consumer, industrial, and communications equipment where small size, low loss, and logic-level drive are essential.

FAQ

What is the maximum continuous drain current for PXP018-30QL at 100 °C ambient?

At T_amb = 100 °C, the normalized continuous drain current is 62 % of the 25 °C rating (−11.7 A), yielding −7.25 A. This value is derived from Figure 2 in the datasheet and assumes FR4 PCB with 6 cm² drain pad and single-sided copper.

Does PXP018-30QL require a gate resistor for stability in switching applications?

A gate resistor is recommended to dampen ringing caused by gate-drain capacitance and PCB trace inductance. With 9 Ω typical internal gate resistance and 6.2 nC Q_GD, a 5–10 Ω external resistor provides optimal trade-off between switching speed and EMI suppression in 500 kHz–1 MHz converters.

Can PXP018-30QL be used in parallel configurations?

Yes - its negative temperature coefficient of R_DS(on) (Figure 11) promotes current sharing. Parallel operation requires matched layout symmetry, identical gate drive paths, and shared thermal mass. Derate total current by 15 % for two devices to ensure thermal balance.

What is the safe operating area (SOA) limitation at DC and 100 µs pulse width?

At DC, SOA is limited by thermal constraints: −11.7 A at V_DS = 0 V, decreasing to −3.5 A at V_DS = −20 V (Figure 3). At 100 µs, peak current rises to −48.3 A at V_DS = 0 V, but collapses rapidly above −10 V due to energy-limited avalanche capability.