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Nexperia USA Inc. PXP020-20QXJ

Part No.:
PXP020-20QXJ
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixPXP020-20QXJ.pdf
Description:
PXP020-20QX/SOT8002/MLPAK33
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,181

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Product details

Overview

PXP020-20QX from Nexperia is a P-channel enhancement-mode Trench MOSFET in MLPAK33 (SOT8002-1) package, designed for high-side load switching with −20 V drain-source rating, 16 mΩ RDS(on) at VGS = −4.5 V and ID = −7.7 A, and low −0.9 V typical gate threshold voltage - enabling efficient operation in battery-powered DC-DC converters and power management circuits.

For engineers reviewing the PXP020-20QX datasheet, PXP020-20QX pinout, PXP020-20QX application, or PXP020-20QX equivalent, this device is selected for compact high-side switch designs requiring low gate drive voltage, thermal robustness on FR4 PCBs, and fast switching with 6.2 nC QGD and 31 ns fall time under 5 Ω gate resistance.

Technical Context

This MOSFET uses Trench process technology to achieve low RDS(on) and tight VGS(th) distribution (−0.7 to −1.25 V), supporting reliable turn-on with logic-level gate drive down to −2.5 V. Its 8-terminal MLPAK33 package integrates four parallel drain leads and three parallel source leads to reduce package inductance and improve current sharing.

The device features an integrated body diode with −0.7 to −1.2 V forward voltage at −1.7 A, 26 ns reverse recovery time, and 10 nC recovered charge - suitable for synchronous rectification and freewheeling in buck converters where diode conduction occurs during dead-time intervals.

Key Specifications

Parameter Value and Actual Design Meaning
VDS −20 V - Maximum blocking voltage for 12 V battery systems with margin against transients.
RDS(on) 16 mΩ (typ) at VGS = −4.5 V - Enables <100 mW conduction loss at 7.7 A continuous current.
VGS(th) −0.9 V (typ) - Ensures full enhancement with 1.8 V/2.5 V logic outputs without level-shifting.
QGD 6.2 nC - Low gate-drain charge minimizes Miller-induced switching delay and improves EMI behavior.
ID (cont) −12.1 A (t ≤ 5 s, FR4 PCB) - Supports peak load currents in portable power switches and hot-swap circuits.
Rth(j-sp) 4–8 K/W - Low junction-to-solder-point thermal resistance enables direct thermal coupling to PCB copper pour.
tf 31 ns - Fast fall time reduces switching losses in PWM frequencies up to 1 MHz.

Pinout & Package

MLPAK33 (SOT8002-1) is a thermally enhanced 8-terminal surface-mount package measuring 3.3 × 3.3 × 0.8 mm, with 0.65 mm lead pitch, mini leads, and exposed drain paddle optimized for solder thermal transfer on FR4 PCBs with 6 cm² copper pad.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3 Source (S) Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching.
4 Gate (G) Single gate input with 6.4 Ω internal gate resistance - compatible with standard logic drivers without external gate resistor.
5, 6, 7, 8 Drain (D) Four parallel drain terminals connect directly to thermal pad - maximize heat extraction and minimize power loop inductance.

Key Features

Feature Design Value
Low VGS(th) −0.9 V typical enables direct interface with 1.8 V/2.5 V microcontrollers and PMICs without gate boosting.
Trench MOSFET architecture Delivers 16 mΩ RDS(on) in 3.3 mm² footprint - 30% lower on-resistance than planar equivalents at same voltage class.
MLPAK33 thermal design 4–8 K/W Rth(j-sp) allows >15 W power dissipation with minimal heatsinking on standard FR4 board.
Fast switching performance 31 ns fall time + 6.2 nC QGD supports high-frequency (>500 kHz) DC-DC operation with low switching loss.
Integrated body diode 26 ns trr, 10 nC Qr - suitable for synchronous rectification in buck topologies without external Schottky.

Applications

High-Side Load Switch Battery Protection Circuit

Use Scenario: Controlled power-up of peripheral modules in IoT sensors and wearables using single-cell Li-ion (2.8–4.2 V) supply.

IC Role / Device Role / Timing Role: High-side switch controlling VOUT rail; turned on/off by MCU GPIO with no level shifter required.

Use Value: −0.9 V VGS(th) ensures full enhancement at 3.3 V logic, while 16 mΩ RDS(on) limits dropout to <26 mV at 1.6 A load.

Use Scenario: Reverse-current blocking and overcurrent cutoff in USB-C power banks with dual-cell series configuration.

IC Role / Device Role / Timing Role: Back-to-back P-MOSFET in protection FET pair; handles bidirectional current interruption during fault events.

Use Value: −20 V VDS rating provides 2× margin over 8.4 V max pack voltage; 42.4 A peak current supports fast short-circuit shutdown.

DC-DC Synchronous Rectifier Industrial 24 V Power Sequencing

Use Scenario: Low-voltage output stage of isolated flyback converter powering FPGA core rails (0.8–1.2 V @ 8 A).

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diode; driven by transformer-coupled gate signal.

Use Value: 26 ns trr and 10 nC Qr minimize reverse recovery loss; 16 mΩ RDS(on) cuts conduction loss by >60% vs. 40 V Schottky.

Use Scenario: Controlled ramp-up of 24 V auxiliary supplies in PLC I/O modules with strict inrush current limits.

IC Role / Device Role / Timing Role: Inrush limiter in linear soft-start configuration; gate driven via RC network to limit dI/dt.

Use Value: 12.1 A continuous rating supports 10 A steady-state loads; 150 °C max Tj enables operation in sealed enclosures at 70 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-side switch applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMT6009LPS-13 −60 V VDS, 9.5 mΩ RDS(on) at −10 V, SO-8 package, higher gate charge (27 nC). Requires −10 V gate drive; unsuitable for 3.3 V logic control without level shift. Select only when higher voltage blocking or lower RDS(on) at −10 V is mandatory and gate drive voltage is available.
PSMN2R0-30YLC −30 V VDS, 2.0 mΩ RDS(on) at −10 V, LFPAK56 package, 3× larger footprint (5.1 × 6.1 mm). Higher thermal mass but slower switching (QGD = 14.5 nC); not pin-compatible. Prefer for high-current (>20 A), low-frequency (<200 kHz) industrial loads where size is secondary to conduction loss.

Compared with DMT6009LPS-13 and PSMN2R0-30YLC, PXP020-20QX trades absolute RDS(on) for logic-level compatibility, compact 3.3 mm² area, and faster switching - making it optimal for space-constrained, battery-fed systems operating below 15 V.

Availability

PXP020-20QX is available at Aetrix Electronics and suitable for high-side load switching, battery management, and DC-DC conversion requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for PXP020-20QX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-qualified components.

PXP020-20QX belongs to Nexperia's TrenchMOS P-channel portfolio targeting compact, efficient power switching in consumer, computing, and industrial power management - emphasizing low-threshold drive, thermal efficiency, and PCB-area optimization.

FAQ

What is the maximum continuous drain current for PXP020-20QX on a standard FR4 PCB?

The maximum continuous drain current is −12.1 A at Tamb = 25 °C with t ≤ 5 s, measured on FR4 PCB with single-sided 6 cm² copper pad for drain. At 100 °C ambient, derated current drops to −4.8 A per Figure 2 in the datasheet.

Can PXP020-20QX be driven directly by a 3.3 V microcontroller GPIO?

Yes - its −0.9 V typical VGS(th) and −1.25 V maximum ensure full enhancement at 3.3 V gate drive. RDS(on) remains 20 mΩ (max) at VGS = −3.3 V and ID = −5.8 A, verified in Table 7 characteristics.

How does the MLPAK33 package improve thermal performance over standard SO-8?

MLPAK33 achieves Rth(j-sp) of 4–8 K/W versus ~50 K/W for SO-8 due to direct copper connection between drain terminals and PCB thermal pad. This enables 15 W power dissipation at Tsp = 25 °C, compared to ~2.5 W for SO-8 under identical conditions.

Is the body diode suitable for reverse polarity protection?

Yes - the integrated source-drain diode has −0.7 to −1.2 V forward voltage at −1.7 A and 26 ns reverse recovery time. It supports reverse-current blocking in battery-input circuits, but external TVS is recommended for transient suppression above 20 V.

PXP020-20QXJ Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
8A (Ta), 23.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Rds On (Max) @ Id, Vgs:
20mOhm @ 7.7A, 4.5V
Vgs(th) (Max) @ Id:
1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
29.1 nC @ 4.5 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
1900 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
1.7W (Ta), 15W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
MLPAK33

PXP020-20QXJ FAQ

1.How can I place an order for PXP020-20QXJ through Aetrix?

Please submit a Request for Quotation (RFQ) for PXP020-20QXJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PXP020-20QXJ reliable?

The price and inventory of PXP020-20QXJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PXP020-20QXJ is usually 5 days.

3.What payment methods are accepted for PXP020-20QXJ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PXP020-20QXJ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PXP020-20QXJ?

PXP020-20QXJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PXP020-20QXJ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PXP020-20QXJ?

For technical support, including PXP020-20QXJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PXP020-20QXJ requirements.

6.How does Aetrix verify that PXP020-20QXJ is sourced from the original manufacturer or authorized distributors?

All PXP020-20QXJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PXP020-20QXJ meets industry standards.

7.What is the process for return or replacement of PXP020-20QXJ?

All PXP020-20QXJ units undergo pre-shipment inspection (PSI). If there is an issue with PXP020-20QXJ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PXP020-20QXJ part is unused and in its original packaging.

Return procedure for PXP020-20QXJ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PXP020-20QXJ Tags

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