Nexperia USA Inc. PXP700-150QSJ

Overview

PXP700-150QS from Nexperia is a 150 V, P-channel enhancement-mode Trench MOSFET in MLPAK33 (SOT8002-2) package, designed for high-voltage active clamp circuits. It delivers R_DS(on) = 550 mΩ (typ) at V_GS = −10 V and I_D = −1 A, T_j = 25 °C, with 8-pin drain-source-source-source-gate-drain-drain-drain configuration and 0.8 mm profile for space-constrained PCB layouts.

For engineers reviewing the PXP700-150QS datasheet, PXP700-150QS pinout, PXP700-150QS application, or PXP700-150QS equivalent, key selection considerations include its −150 V V_DS rating, low thermal resistance (R_th(j-sp) = 6.4 K/W), avalanche ruggedness (E_AS = 45 mJ), and suitability for high-side switching in flyback and resonant converters.

Technical Context

This P-channel MOSFET employs Trench technology to achieve low on-resistance and stable threshold voltage (V_GS(th) = −2 to −4 V). Its gate charge profile (Q_G(tot) = 15 nC typ, Q_GD = 3.2 nC) supports efficient hard-switching in clamping topologies where fast turn-off and controlled dV/dt are critical.

The device features an integrated source-drain diode with V_SD = −0.8 to −1.2 V at I_S = −1 A and t_rr = 36 ns, enabling bidirectional current handling during dead-time intervals. Thermal design is supported by dual thermal paths: junction-to-solder-point (6.4 K/W) and junction-to-ambient (155 K/W on standard FR4).

Key Specifications

Pinout & Package

MLPAK33 (SOT8002-2) is a thermally enhanced 8-terminal surface-mount package measuring 3.3 × 3.3 × 0.8 mm, featuring mini leads, 0.65 mm pitch, and exposed drain terminals for low-inductance, high-current routing and PCB heat spreading.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage clamping applications.

Compared with PMV31XPEA and SI2301-CM, PXP700-150QS uniquely combines −150 V rating, avalanche ruggedness, and MLPAK33 thermal performance - making it the only option among the three qualified for high-voltage active clamp circuits operating above 100 V DC.

Availability

PXP700-150QS is available at Aetrix Electronics and suitable for active clamp flyback converters, resonant LLC clamping stages, and high-voltage DC link protection requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for PXP700-150QS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, ESD protection, and automotive-grade components.

The PXP700-150QS belongs to Nexperia's high-voltage TrenchMOS portfolio, engineered specifically for energy-recycling topologies like active clamp flyback and resonant converters where voltage robustness, thermal efficiency, and avalanche capability are essential.

FAQ

What is the maximum continuous drain current for PXP700-150QS at 100 °C ambient?

At T_amb = 100 °C, the normalized continuous drain current is 70% of the 25 °C rating. Since I_D = −1 A at 25 °C, the derated value is −0.7 A. This is confirmed in Table 5 (Limiting values) and Fig. 2 of the datasheet, which specifies −0.7 A at T_amb = 100 °C with standard FR4 mounting.

Can PXP700-150QS be used in place of an N-channel MOSFET in an active clamp circuit?

No - PXP700-150QS is a P-channel device intended for high-side, source-follower configuration where gate drive is referenced to the high-voltage rail. Replacing an N-channel clamp FET would require redesigning gate drive circuitry, as N-channel devices need gate voltage > drain voltage to turn on, while this P-channel part turns on with negative gate-source bias relative to source.

Does PXP700-150QS require a gate resistor for safe operation?

A gate resistor is recommended to dampen ringing and control dV/dt, especially given its 8.5 Ω typical gate resistance and 3.2 nC Q_GD. While not strictly mandatory for basic turn-on/turn-off, a 10–22 Ω series resistor improves EMI performance and reduces risk of oscillation when driven by standard gate drivers in high-frequency active clamp applications.

What is the thermal pad requirement for achieving the 6.4 K/W R_th(j-sp) specification?

To achieve R_th(j-sp) = 6.4 K/W, the device must be mounted on an FR4 PCB with a 6 cm² tin-plated copper pad dedicated to the four drain terminals. The datasheet specifies this exact pad size and plating in Table 6 footnote [2]; smaller pads or non-tin finishes increase thermal resistance and reduce power handling capability.