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Nexperia USA Inc. PXP8R3-20QXJ
- Part No.:
- PXP8R3-20QXJ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
PXP8R3-20QXJ.pdf
- Description:
- PXP8R3-20QX/SOT8002/MLPAK33
- Quantity:
- Payment:
- Shipping:
Inventory:5,804
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Product details
Overview
PXP8R3-20QX from Nexperia is a P-channel enhancement-mode Trench MOSFET in MLPAK33 (SOT8002-1) package, designed for high-side load switching with −20 V drain-source rating, 6.6 mΩ RDS(on) at VGS = −4.5 V and Tj = 25 °C, and −20.2 A continuous drain current under pulsed conditions. It enables compact, thermally efficient power control in battery-powered DC/DC converters.
For engineers reviewing the PXP8R3-20QX datasheet, PXP8R3-20QX pinout, PXP8R3-20QX application, or PXP8R3-20QX equivalent, key selection criteria include its low threshold voltage (−0.9 V typ), 8-terminal source-gate-drain configuration, thermal resistance of 21 K/W (junction-to-solder point), and suitability for high-side switching in portable power management systems.
Technical Context
This device uses Trench MOSFET technology to achieve low on-resistance and fast switching with QG(tot) = 61.2 nC and tf = 62 ns under standard test conditions. Its gate threshold voltage range (−0.7 to −1.25 V) ensures reliable turn-on with low-voltage logic-level drive.
The MLPAK33 package integrates four drain terminals and three source terminals to reduce parasitic inductance and improve thermal conduction via a 6 cm² copper pad. Junction temperature is rated from −55 °C to 150 °C, supporting operation in demanding ambient environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −20 V - Maximum blocking voltage for high-side switch configurations in 12 V nominal systems. |
| RDS(on) @ VGS = −4.5 V | 6.6 mΩ (typ) - Enables <1 W conduction loss at 12.3 A, critical for thermally constrained PCB layouts. |
| ID (continuous) | −12.4 A @ Tamb = 25 °C - Sustained current capability with standard FR4 mounting and 6 cm² drain pad. |
| QG(tot) | 61.2 nC (typ) - Determines gate drive energy requirement; compatible with low-power microcontroller GPIOs via appropriate buffer. |
| Rth(j-sp) | 1.5 K/W (typ) - Low junction-to-solder-point thermal resistance enables direct thermal coupling to PCB copper for passive cooling. |
| VGS(th) | −0.9 V (typ) - Ensures full enhancement with 1.8 V or 3.3 V logic-level gate drive without level shifting. |
| tf | 62 ns - Fast fall time supports >1 MHz switching in synchronous buck or load-switch applications. |
Pinout & Package
MLPAK33 (SOT8002-1) is a thermally enhanced 8-terminal surface-mount package measuring 3.3 × 3.3 × 0.8 mm, featuring mini leads and optimized copper layout for low-inductance, high-current routing. The package includes dedicated multi-terminal connections for source, gate, and drain to minimize loop inductance and enhance thermal dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching. |
| 4 | Gate (G) | Single gate input with 2.4 Ω internal gate resistance; optimized for stable drive without external gate resistor in most cases. |
| 5, 6, 7, 8 | Drain (D) | Four parallel drain terminals maximize thermal conduction to PCB copper and minimize drain loop inductance in high-frequency switching. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at logic-level drive | 6.6 mΩ @ VGS = −4.5 V enables efficient 12 V load switching without gate boosting. |
| Trench MOSFET architecture | Delivers higher cell density and lower specific on-resistance than planar P-channel devices of comparable size. |
| Thermally optimized MLPAK33 | 1.5 K/W Rth(j-sp) allows >65 W peak power dissipation when soldered to 6 cm² copper, eliminating need for heatsinks. |
| Low gate charge | 61.2 nC total gate charge reduces driver power consumption and EMI during transitions. |
| Enhanced safe operating area (SOA) | Supports 102.8 A peak drain current (10 µs pulse) - suitable for inrush current limiting and hot-swap protection. |
Applications
| High-Side Load Switch | Battery Protection Circuit |
|---|---|
|
Use Scenario: Controlled power-up of peripheral modules in portable medical devices using a single-cell Li-ion supply. IC Role / Device Role / Timing Role: High-side switch enabling system-level power sequencing and fault-isolated shutdown. Use Value: −0.9 V VGS(th) ensures full turn-on from 1.8 V microcontroller I/O; 6.6 mΩ RDS(on) limits voltage drop to <80 mV at 12 A. |
Use Scenario: Reverse-polarity and overcurrent protection in USB-C power banks with dual-cell series configuration. IC Role / Device Role / Timing Role: Primary reverse-blocking element in battery input path with fast turn-off response. Use Value: 102.8 A peak drain current handles surge events; 38 ns reverse recovery time minimizes shoot-through risk during polarity reversal. |
| DC-DC Synchronous Buck Converter | Industrial Sensor Node Power Management |
|
Use Scenario: High-efficiency 5 V output stage in a 12 V input industrial buck converter powering FPGA I/O rails. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce conduction losses. Use Value: 62 ns fall time and 18.4 nC QGD support clean dead-time control at 500 kHz–1 MHz switching frequencies. |
Use Scenario: Low-quiescent-power enable switch for LoRaWAN sensor nodes powered by coin-cell batteries. IC Role / Device Role / Timing Role: Always-on load switch with ultra-low leakage (<1 µA IDSS) preserving battery shelf life. Use Value: −1 µA drain leakage at −20 V VDS extends 10-year battery life; 3.3 × 3.3 mm footprint saves board space. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-side switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT6009LPS-13 | RDS(on) = 9.0 mΩ @ VGS = −4.5 V; SO-8 package; higher Rth(j-a) (60 K/W) | Less suited for high-current, thermally dense layouts due to larger footprint and inferior thermal performance. | Select when legacy SO-8 compatibility is required and peak current ≤8 A. |
| PSMN3R5-20PL | RDS(on) = 3.5 mΩ @ VGS = −4.5 V; LFPAK56 package; higher QG (105 nC) | Better conduction efficiency but demands stronger gate drive and exhibits slower switching in low-drive scenarios. | Select when minimizing conduction loss dominates over gate drive capability and layout area constraints. |
Compared with DMT6009LPS-13 and PSMN3R5-20PL, PXP8R3-20QX delivers optimal balance of low RDS(on), minimal gate charge, and superior thermal performance in a compact 3.3 mm² footprint-making it ideal for space- and thermally constrained high-side switch designs where logic-level drive and fast switching coexist.
Availability
PXP8R3-20QX is available at Aetrix Electronics and suitable for high-side load switching, battery management, and DC-to-DC conversion requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle availability.
Supply support for PXP8R3-20QX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-qualified components.
The PXP8R3-20QX belongs to Nexperia's TrenchMOS P-channel portfolio, engineered specifically for high-efficiency, low-footprint power switching in portable and industrial power management systems.
FAQ
What is the maximum continuous drain current for PXP8R3-20QX at 100 °C ambient temperature?
The maximum continuous drain current is −7.8 A at Tamb = 100 °C with standard FR4 mounting and 6 cm² drain copper pad. This derating reflects thermal limitations-not electrical degradation-and is validated per IEC 60134 limiting values. Operation above this current requires enhanced PCB thermal design or forced cooling.
Can PXP8R3-20QX be driven directly from a 3.3 V microcontroller GPIO?
Yes. With a typical VGS(th) of −0.9 V and guaranteed turn-on down to −0.7 V, the device fully enhances at VGS = −3.3 V. Gate charge of 61.2 nC allows reliable switching up to ~500 kHz using a 100 Ω series resistor; no level shifter is needed for standard logic-level control.
How does the MLPAK33 package improve thermal performance compared to standard SO-8?
MLPAK33 achieves Rth(j-sp) = 1.5 K/W (typ), versus ~5–6 K/W for SO-8, by integrating four drain terminals directly bonded to large PCB copper areas. This reduces thermal resistance by >75%, enabling >50 W peak power dissipation without heatsinks-critical for compact, fanless designs.
Is PXP8R3-20QX suitable for automotive applications?
No. This device is not AEC-Q101 qualified and lacks automotive-grade stress testing, qualification reporting, or extended temperature validation beyond 150 °C junction. Nexperia explicitly states non-automotive qualification in its legal disclaimers; use in automotive systems requires formal validation by the customer and carries full liability risk.
PXP8R3-20QXJ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 12.4A (Ta), 65.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 8.3mOhm @ 12.3A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 91.8 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6200 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta), 50W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- MLPAK33
PXP8R3-20QXJ FAQ
1.How can I place an order for PXP8R3-20QXJ through Aetrix?
Please submit a Request for Quotation (RFQ) for PXP8R3-20QXJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PXP8R3-20QXJ reliable?
The price and inventory of PXP8R3-20QXJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PXP8R3-20QXJ is usually 5 days.
3.What payment methods are accepted for PXP8R3-20QXJ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PXP8R3-20QXJ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PXP8R3-20QXJ?
PXP8R3-20QXJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PXP8R3-20QXJ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PXP8R3-20QXJ?
For technical support, including PXP8R3-20QXJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PXP8R3-20QXJ requirements.
6.How does Aetrix verify that PXP8R3-20QXJ is sourced from the original manufacturer or authorized distributors?
All PXP8R3-20QXJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PXP8R3-20QXJ meets industry standards.
7.What is the process for return or replacement of PXP8R3-20QXJ?
All PXP8R3-20QXJ units undergo pre-shipment inspection (PSI). If there is an issue with PXP8R3-20QXJ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PXP8R3-20QXJ part is unused and in its original packaging.
Return procedure for PXP8R3-20QXJ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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