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Renesas RJJ0315DPA-00#J5A
- Part No.:
- RJJ0315DPA-00#J5A
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- 8-WDFN Exposed Pad
- Datasheet:
-
RJJ0315DPA-00#J5A.pdf
- Description:
- MOSFET P-CH 30V 35A
- Quantity:
- Payment:
- Shipping:
Inventory:2,850
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Product details
Overview
RJJ0315DPA-00#J5A from Renesas Electronics is a P-channel power MOSFET designed for high-speed DC power switching in industrial and automotive load management systems, featuring –30 V VDSS, –35 A ID, and 5.9 mΩ max RDS(on) at –10 V VGS, with capability for 4.5 V gate drive in compact WPAK(3F) packaging.
For engineers reviewing the RJJ0315DPA-00#J5A datasheet, RJJ0315DPA-00#J5A pinout, RJJ0315DPA-00#J5A application, or RJJ0315DPA-00#J5A equivalent, key selection criteria include low on-resistance at 4.5 V gate drive, fast switching (td(off) = 115 ns), body-diode recovery performance (trr = 100 ns), thermal resistance (θch–c = 4.17 °C/W), and Pb-free/halogen-free compliance for automotive-grade designs.
Technical Context
This device operates as a high-density, logic-level-compatible P-channel switch optimized for reverse-polarity protection, hot-swap control, and high-side load switching where gate drive voltage is limited to –4.5 V or –10 V. Its low RDS(on) (6.8 mΩ typ at –4.5 V) and high channel dissipation (30 W at Tc = 25 °C) support continuous high-current operation in thermally constrained PCB layouts.
The MOSFET integrates a robust body diode with VDF = –0.87 V (typ) at –35 A and trr = 100 ns under –100 A/µs di/dt, enabling efficient freewheeling in inductive load circuits without external diode supplementation. Its gate charge profile (Qg = 48 nC, Qgd = 20 nC) supports stable high-frequency PWM control up to several hundred kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | –30 V - maximum blocking voltage for 12 V/24 V automotive and industrial bus protection |
| ID | –35 A - continuous drain current rating at Tc = 25 °C, supporting high-power load switching |
| RDS(on) max | 5.9 mΩ at –10 V VGS - ensures <1.0 W conduction loss at 35 A, critical for thermal management |
| RDS(on) typ | 6.8 mΩ at –4.5 V VGS - enables direct microcontroller GPIO driving without level-shifting circuitry |
| td(off) | 115 ns - fast turn-off supports high-efficiency PWM in motor drivers and DC-DC controllers |
| trr | 100 ns - short body-diode recovery time reduces switching losses in synchronous rectification |
| Qg | 48 nC - moderate total gate charge balances drive strength and EMI control in high-speed switching |
Pinout & Package
Package: WPAK(3F), Renesas code PWSN0008DE-A - surface-mount, thermally enhanced 8-pin leadless package with exposed drain pad for low thermal resistance (θch–c = 4.17 °C/W).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source connection for internal P-channel cells; tied to system ground or low-side reference |
| 4 | Gate | Control input requiring negative voltage relative to source to turn on; compatible with 4.5 V logic swing |
| 5, 6, 7, 8 | Drain | High-current output node connected to exposed thermal pad; must be soldered to large copper area for heat dissipation |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at –4.5 V VGS, eliminating need for gate driver ICs in MCU-based systems |
| Low RDS(on) at 4.5 V | 6.8 mΩ typ enables <0.85 W conduction loss at 30 A, reducing heatsink requirements |
| Fast switching performance | 115 ns td(off) + 71 ns tf supports >200 kHz PWM in DC-DC and motor control |
| Robust body diode | VDF = –0.87 V (typ) and trr = 100 ns allow reliable freewheeling in H-bridge and buck converter topologies |
| Pb-free & halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709B, suitable for automotive and industrial end equipment |
Applications
| Reverse Polarity Protection | Hot-Swap Controller |
|---|---|
Use Scenario: Prevents damage to downstream electronics when battery or power supply leads are accidentally reversed during field maintenance or replacement. IC Role / Device Role / Timing Role: High-side P-channel switch placed between input connector and main power rail; conducts only when VIN polarity is correct. Use Value: RJJ0315DPA-00#J5A's –30 V VDSS and –35 A ID withstand full system surge while its 6.8 mΩ RDS(on) at –4.5 V ensures minimal voltage drop (<0.2 V at 30 A). | Use Scenario: Enables safe insertion and removal of FRUs (Field Replaceable Units) such as line cards or storage modules in telecom and server backplanes without powering down the chassis. IC Role / Device Role / Timing Role: Inrush current limiter and controlled power ramp-up switch; gate driven by dedicated hot-swap controller IC. Use Value: RJJ0315DPA-00#J5A's 48 nC Qg and 115 ns td(off) allow precise slew-rate control and fast fault shutdown, limiting peak inrush to <5 A during 10 ms ramp-up. |
| Automotive Load Switch | Industrial Motor Driver High-Side |
Use Scenario: Controls power delivery to cabin lighting, HVAC actuators, or infotainment peripherals in 12 V vehicle electrical systems with strict EMC and thermal constraints. IC Role / Device Role / Timing Role: High-side load switch managed by CAN/LIN microcontroller GPIO; integrated diagnostics via VDS sensing. Use Value: RJJ0315DPA-00#J5A's –30 V rating covers load-dump transients (ISO 7637-2 Pulse 5a), and its 150 °C Tch rating sustains operation in under-hood environments. | Use Scenario: Drives one leg of an H-bridge for brushed DC motors in factory automation equipment, requiring bidirectional current handling and fast commutation. IC Role / Device Role / Timing Role: Upper-leg P-channel switch synchronized with N-channel low-side device; body diode provides freewheel path during dead-time. Use Value: RJJ0315DPA-00#J5A's 100 ns trr and –0.87 V VDF minimize shoot-through risk and conduction loss during PWM transitions at 20 kHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF4905PBF | Higher RDS(on) (20 mΩ min at –10 V), larger TO-220 package, slower switching (td(off) ≈ 220 ns) | Less suitable for space-constrained or high-frequency designs; better for cost-sensitive, lower-current (<15 A) legacy systems | Select IRF4905PBF only if board layout allows TO-220 footprint and thermal design accommodates higher conduction loss. |
| DMTH3004LPSQ-13 | Lower VDSS (–30 V same), lower RDS(on) (3.2 mΩ typ at –10 V), smaller PowerSO-8 package, but requires –10 V gate drive for full enhancement | Better for ultra-low-loss 24 V systems; unsuitable for 4.5 V logic-level drive without gate driver | Choose DMTH3004LPSQ-13 when gate drive can support –10 V and PCB area is extremely limited; otherwise RJJ0315DPA-00#J5A offers superior 4.5 V compatibility. |
Compared with IRF4905PBF and DMTH3004LPSQ-13, RJJ0315DPA-00#J5A uniquely balances 4.5 V logic-level operation, 5.9 mΩ RDS(on), and WPAK(3F) thermal performance-making it optimal for automotive and industrial high-current switches where gate drive voltage and board space are constrained.
Availability
RJJ0315DPA-00#J5A is available at Aetrix Electronics and suitable for automotive load switching, industrial hot-swap control, and reverse-polarity protection requiring stable component supply across production lifecycles.
Supply support for RJJ0315DPA-00#J5A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and IoT markets.
RJJ0315DPA-00#J5A belongs to Renesas' Power MOSFET product line engineered for high-reliability DC power switching in harsh-environment applications including automotive body electronics and industrial power distribution.
FAQ
What is the maximum gate-to-source voltage rating for RJJ0315DPA-00#J5A?
The absolute maximum gate-to-source voltage (VGSS) for RJJ0315DPA-00#J5A is –20 V / +10 V. Exceeding –20 V risks permanent gate oxide damage, while exceeding +10 V may cause parasitic turn-on. For reliable operation, gate drive should be clamped within this range-commonly implemented using Zener diodes or dedicated gate drivers. This specification is confirmed in the Absolute Maximum Ratings table on page 1 of the R07DS0388EJ0400 datasheet.
Can RJJ0315DPA-00#J5A be driven directly by a 3.3 V microcontroller GPIO?
No-RJJ0315DPA-00#J5A requires a negative gate-to-source voltage to turn on, and its threshold is specified between –1.0 V and –2.5 V. A 3.3 V GPIO alone cannot generate the required negative bias relative to the source. To achieve logic-level operation, the source must be referenced to a higher potential (e.g., high-side configuration), and the gate driven to ~0 V (for turn-on) or pulled above source (for turn-off). The device supports –4.5 V gate drive, not positive 3.3 V drive.
What is the thermal resistance from channel to case (θch–c) for RJJ0315DPA-00#J5A?
The channel-to-case thermal resistance (θch–c) for RJJ0315DPA-00#J5A is 4.17 °C/W, measured under Tc = 25 °C conditions. This value assumes full soldering of the exposed drain pad to a minimum 100 mm² copper area with ≥2 oz thickness. It is used to calculate junction temperature rise (Tj = Tc + Pdiss × θch–c) and appears in the Transient Thermal Impedance chart on page 5 of the R07DS0388EJ0400 datasheet.
Does RJJ0315DPA-00#J5A have avalanche ruggedness rating?
No avalanche rating (EAS) is specified for RJJ0315DPA-00#J5A in the R07DS0388EJ0400 datasheet. The device is characterized for repetitive unclamped inductive switching only within its Safe Operating Area (SOA) limits shown on page 3. Designers must ensure inductive energy is absorbed externally (e.g., via snubbers or freewheeling paths) or verify operation strictly within SOA boundaries to avoid failure.
Is RJJ0315DPA-00#J5A suitable for automotive applications per AEC-Q101?
RJJ0315DPA-00#J5A is not explicitly qualified to AEC-Q101 in the provided datasheet. While Renesas classifies it under "Standard" quality grade (suitable for automotive body electronics per Note 5), no AEC-Q101 test report or qualification statement is included in R07DS0388EJ0400 Rev.4.00. For safety-critical or engine-compartment applications, users must consult Renesas' official qualification status or select an AEC-Q101-certified variant such as the RJJ0315DPE series.
RJJ0315DPA-00#J5A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-WDFN Exposed Pad
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 35A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 5.9mOhm @ 17.5A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 48 nC @ 4.5 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 4300 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 30W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- -
RJJ0315DPA-00#J5A FAQ
1.How can I place an order for RJJ0315DPA-00#J5A through Aetrix?
Please submit a Request for Quotation (RFQ) for RJJ0315DPA-00#J5A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJJ0315DPA-00#J5A reliable?
The price and inventory of RJJ0315DPA-00#J5A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJJ0315DPA-00#J5A is usually 5 days.
3.What payment methods are accepted for RJJ0315DPA-00#J5A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJJ0315DPA-00#J5A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJJ0315DPA-00#J5A?
RJJ0315DPA-00#J5A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJJ0315DPA-00#J5A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJJ0315DPA-00#J5A?
For technical support, including RJJ0315DPA-00#J5A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJJ0315DPA-00#J5A requirements.
6.How does Aetrix verify that RJJ0315DPA-00#J5A is sourced from the original manufacturer or authorized distributors?
All RJJ0315DPA-00#J5A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJJ0315DPA-00#J5A meets industry standards.
7.What is the process for return or replacement of RJJ0315DPA-00#J5A?
All RJJ0315DPA-00#J5A units undergo pre-shipment inspection (PSI). If there is an issue with RJJ0315DPA-00#J5A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJJ0315DPA-00#J5A part is unused and in its original packaging.
Return procedure for RJJ0315DPA-00#J5A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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