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Renesas RJJ0621DPP-00#T2

Part No.:
RJJ0621DPP-00#T2
Manufacturer:
Renesas
Category:
FETs, MOSFETs
Package:
-
Datasheet:
AetrixRJJ0621DPP-00#T2.pdf
Description:
P-CHANNEL POWER MOSFET
Quantity:
Payment:
Payment
Shipping:
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Inventory:10,416

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Product details

Overview

RJJ0621DPP-00#T2 from Renesas Electronics is a P-channel enhancement-mode power MOSFET in TO-220FN package, rated for –60 V drain-to-source voltage, 56 mΩ maximum RDS(on) at –10 V VGS, and –25 A continuous drain current. It serves as a high-speed switching element in low-side load control circuits for DC-DC converters and motor drivers.

For engineers reviewing the RJJ0621DPP-00#T2 datasheet, RJJ0621DPP-00#T2 pinout, RJJ0621DPP-00#T2 application, or RJJ0621DPP-00#T2 equivalent, key selection criteria include its –60 V VDS, gate threshold voltage range (–1.0 to –2.5 V), body diode forward voltage (–0.9 to –1.5 V), thermal resistance (3.57 °C/W), and avalanche rating (–25 A).

Technical Context

This device operates as a normally-off P-channel switch requiring negative gate drive relative to source. Its gate threshold voltage (VGS(off)) of –1.7 V (typ.) enables reliable turn-on with standard logic-level gate drivers when referenced to source potential. The low output capacitance (Coss = 190 pF) and fast switching times (td(on) = 15 ns, tf = 50 ns) support high-frequency operation up to several hundred kHz.

The integrated body diode exhibits reverse recovery time (trr) suitable for non-synchronous buck topologies and solenoid flyback management. Thermal design is anchored by θch-c = 3.57 °C/W and Tch rating up to +150 °C, enabling use in thermally constrained industrial power stages without forced convection.

Key Specifications

Parameter Value and Actual Design Meaning
VDS –60 V - Maximum blocking voltage in off-state; supports 48 V bus systems with margin.
RDS(on) 56 mΩ (max) at –12.5 A, –10 V VGS - Enables <1.8 W conduction loss at full rated current.
ID (DC) –25 A - Continuous current capability with heatsink; derates linearly above 25 °C case temperature.
VGS(th) –1.0 to –2.5 V - Ensures robust turn-on with –4.5 V or –10 V gate drive; compatible with microcontroller GPIOs via level shift.
tf/tr 50 ns / 25 ns - Fast fall/rise times reduce switching losses in PWM applications above 100 kHz.
θch-c 3.57 °C/W - Direct thermal path from channel to case enables efficient heatsinking on PCB-mounted metal tab.
Qg ~40 nC (estimated from gate charge curve) - Determines required gate driver peak current for sub-100 ns switching transitions.

Pinout & Package

Package: TO-220FN (Renesas code PRSS0003AB-A), lead-mounted, insulated tab, 3-terminal through-hole package with metal tab electrically connected to Drain.

Pin/Terminal Circuit Role Design Meaning
1 (Left) Gate Control terminal; requires negative voltage relative to Source to turn on; 0.1 µA leakage max at ±20 V.
2 (Center) Drain Main power output terminal; electrically tied to metal tab; must be isolated from heatsink unless floating reference used.
3 (Right) Source Power return/reference node; defines gate drive reference; carries full load current and body diode forward current.

Key Features

Feature Design Value
High-speed switching 15 ns turn-on delay and 50 ns fall time enable efficient operation in 200–500 kHz DC-DC converters.
Low RDS(on) at logic-level drive 65 mΩ max at –4.5 V VGS allows direct interface with 5 V or 3.3 V microcontrollers using simple inverting stage.
Avalanche-rated Rated for –25 A single-pulse avalanche energy (L = 100 µH); supports inductive load switching without external snubbers.
TO-220FN insulated package Electrically isolated metal tab eliminates need for insulating hardware when mounting to grounded heatsinks.
Body diode with defined trr Reverse recovery time characterized for solenoid and relay coil demagnetization; avoids voltage spikes >2× VDS.

Applications

DC-DC Buck Converter Brushed DC Motor Driver

Use Scenario: Non-synchronous step-down regulator for industrial I/O modules operating from 24–48 V input.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacement; handles freewheeling current during high-side switch off-time.

Use Value: 56 mΩ RDS(on) reduces conduction loss vs. Schottky diode; TO-220FN tab simplifies thermal attachment to chassis ground plane.

Use Scenario: H-bridge half-bridge leg for 24 V brushed motor control in automated valve actuators.

IC Role / Device Role / Timing Role: High-side or low-side switch controlling motor direction and braking via PWM.

Use Value: –60 V VDS withstands inductive kickback up to 50 V; avalanche rating eliminates need for external TVS in compact designs.

Solenoid Control Module Industrial Power Sequencer

Use Scenario: 24 V solenoid driver in pneumatic control panels with fast release timing requirements.

IC Role / Device Role / Timing Role: Low-side switch enabling rapid de-energization using body diode reverse recovery and controlled fall time.

Use Value: 50 ns fall time and characterized trr ensure consistent solenoid release within 100 µs; –25 A pulse rating handles inrush.

Use Scenario: Sequenced power-up of multiple subsystems (e.g., sensor, MCU, radio) in edge gateway equipment.

IC Role / Device Role / Timing Role: Standby-mode load switch isolating downstream rails until firmware confirms system readiness.

Use Value: –1.7 V VGS(th) ensures clean turn-on with 3.3 V GPIO; low IDSS (<1 µA) prevents standby current leakage across rail.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IXTP10P60P Higher VDS (–60 V same), higher RDS(on) (120 mΩ), TO-220 (non-insulated tab) Requires insulating washer for heatsink mounting; less efficient at high current due to higher conduction loss. Choose if legacy layout uses non-insulated TO-220 and thermal margin permits higher RDS(on).
IRF9540NPBF Same VDS (–60 V), higher RDS(on) (200 mΩ), TO-220 (non-insulated tab), slower switching (tf = 110 ns) Not suitable for >100 kHz switching; higher losses require larger heatsink; no avalanche rating specified. Acceptable only for low-frequency, low-duty-cycle loads where cost is primary constraint and thermal headroom exists.

Compared with IXTP10P60P and IRF9540NPBF, RJJ0621DPP-00#T2 delivers lower conduction loss, faster switching, and guaranteed avalanche ruggedness in an insulated-package form factor-making it preferable for space-constrained, high-efficiency, or inductive-load-sensitive designs.

Availability

RJJ0621DPP-00#T2 is available at Aetrix Electronics and suitable for DC-DC converter design, brushed motor control, and solenoid actuation requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing.

Supply support for RJJ0621DPP-00#T2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer specializing in microcontrollers, analog, power, and mixed-signal solutions for industrial, automotive, and infrastructure markets.

The RJJ0621DPP-00#T2 belongs to Renesas' discrete power MOSFET product line, engineered for high-reliability industrial power switching where efficiency, thermal performance, and ruggedness are critical.

FAQ

What is the gate threshold voltage range for RJJ0621DPP-00#T2?

The RJJ0621DPP-00#T2 has a gate-to-source cutoff voltage (VGS(off)) range of –1.0 V to –2.5 V at ID = –1 mA. This ensures predictable turn-on behavior with –4.5 V or –10 V gate drive while maintaining noise immunity against spurious positive transients. The typical value is –1.7 V, allowing compatibility with standard logic-level controllers when referenced correctly to the source terminal.

Is RJJ0621DPP-00#T2 suitable for high-frequency PWM motor control?

Yes, RJJ0621DPP-00#T2 supports high-frequency PWM motor control with measured switching parameters: td(on) = 15 ns, tr = 25 ns, td(off) = 100 ns, and tf = 50 ns under standard test conditions (VDD = –30 V, ID = –12.5 A, RG = 25 Ω). Its low Ciss (1550 pF) and Crss (100 pF) minimize Miller effect, enabling stable operation up to 500 kHz in well-designed gate drive circuits.

Does RJJ0621DPP-00#T2 have an insulated package?

Yes, RJJ0621DPP-00#T2 uses the TO-220FN package (Renesas code PRSS0003AB-A), which features an electrically insulated metal tab. The drain-connected tab is isolated from the mounting surface, eliminating the need for insulating washers or pads when attached to a grounded heatsink-reducing thermal resistance and assembly complexity compared to standard TO-220 variants.

What is the maximum avalanche energy rating for RJJ0621DPP-00#T2?

RJJ0621DPP-00#T2 is rated for single-pulse avalanche current IAP = –25 A with L = 100 µH, corresponding to an estimated unclamped inductive switching (UIS) energy of ~31 mJ. This rating is validated per JEDEC standards and allows safe operation in inductive load switching applications-such as solenoids and relay coils-without requiring external clamping components under defined test conditions.

Can RJJ0621DPP-00#T2 be used in a high-side switch configuration?

Yes, RJJ0621DPP-00#T2 can be used in high-side switch configurations, but requires a gate drive voltage more negative than the source (i.e., VGS < 0). Since the source sits at the switched rail potential, a dedicated negative-bias or charge-pump gate driver is necessary to achieve sufficient VGS (e.g., –10 V) for low RDS(on). Its –60 V VDS rating supports high-side use in ≤48 V systems with appropriate drive design.

RJJ0621DPP-00#T2 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
FET Type:
-
Technology:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

RJJ0621DPP-00#T2 FAQ

1.How can I place an order for RJJ0621DPP-00#T2 through Aetrix?

Please submit a Request for Quotation (RFQ) for RJJ0621DPP-00#T2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RJJ0621DPP-00#T2 reliable?

The price and inventory of RJJ0621DPP-00#T2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJJ0621DPP-00#T2 is usually 5 days.

3.What payment methods are accepted for RJJ0621DPP-00#T2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJJ0621DPP-00#T2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for RJJ0621DPP-00#T2?

RJJ0621DPP-00#T2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RJJ0621DPP-00#T2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RJJ0621DPP-00#T2?

For technical support, including RJJ0621DPP-00#T2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJJ0621DPP-00#T2 requirements.

6.How does Aetrix verify that RJJ0621DPP-00#T2 is sourced from the original manufacturer or authorized distributors?

All RJJ0621DPP-00#T2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJJ0621DPP-00#T2 meets industry standards.

7.What is the process for return or replacement of RJJ0621DPP-00#T2?

All RJJ0621DPP-00#T2 units undergo pre-shipment inspection (PSI). If there is an issue with RJJ0621DPP-00#T2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RJJ0621DPP-00#T2 part is unused and in its original packaging.

Return procedure for RJJ0621DPP-00#T2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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