My Inquiry
My Account
Renesas RJJ0621DPP-E0#T2
- Part No.:
- RJJ0621DPP-E0#T2
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
RJJ0621DPP-E0#T2.pdf
- Description:
- RJJ0621DPP - P CHANNEL SINGLE P
- Quantity:
- Payment:
- Shipping:
Inventory:650
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
RJJ0621DPP-E0#T2 from Renesas Electronics is a P-channel enhancement-mode power MOSFET in TO-220FN package, rated for –60 V drain-to-source voltage, 56 mΩ maximum RDS(on) at –12.5 A/–10 VGS, and –25 A continuous drain current. It serves as a high-speed, low-loss high-side switch in DC-DC converters and motor control circuits.
For engineers reviewing the RJJ0621DPP-E0#T2 datasheet, RJJ0621DPP-E0#T2 pinout, RJJ0621DPP-E0#T2 application, or RJJ0621DPP-E0#T2 equivalent, key selection criteria include its –60 V blocking capability, gate threshold of –1.7 V (typ), 15 ns turn-on delay, body diode forward voltage of –0.9 V (typ), and thermal resistance of 3.57 °C/W - all critical for efficient high-current switching in industrial power stages.
Technical Context
This device operates as a normally-off P-channel switch requiring negative gate drive relative to source. Its gate threshold voltage range (–1.0 to –2.5 V) enables compatibility with standard logic-level controllers when referenced to source potential. The 1550 pF input capacitance and 100 pF reverse transfer capacitance support predictable gate drive design at switching frequencies up to several hundred kHz.
The integrated body diode exhibits 100 ns typical reverse recovery time under –100 A/µs di/dt, making it suitable for synchronous rectification and freewheeling paths where controlled diode conduction is required. Thermal performance is defined by channel-to-case resistance of 3.57 °C/W, enabling 35 W dissipation at Tc = 25°C without forced cooling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | –60 V: Maximum drain-to-source blocking voltage; defines safe operating range in high-side configurations with up to 60 V rail. |
| RDS(on) max | 56 mΩ at –12.5 A, –10 VGS: Conduction loss of ≤ 1.75 W at full rated current; enables compact thermal design. |
| ID (DC) | –25 A: Continuous drain current rating at Tc = 25°C; supports high-power load switching without derating in heatsinked applications. |
| td(on) | 15 ns typ: Gate-controlled turn-on delay; allows precise timing control in PWM-driven power stages. |
| VGS(off) | –1.7 V typ: Gate threshold voltage; ensures reliable turn-off with ≥ –2.5 V gate bias and stable operation down to –1.0 V. |
| θch-c | 3.57 °C/W: Channel-to-case thermal resistance; permits 35 W continuous dissipation with minimal temperature rise across heatsink interface. |
| Ciss | 1550 pF: Input capacitance at VDS = –10 V; determines gate drive strength requirement for 100–500 kHz switching. |
Pinout & Package
Package: TO-220FN (Renesas code PRSS0003AB-A), lead-mounted, insulated tab, 3-terminal through-hole package with 15 mm × 14 mm footprint and 10 mm height. Tab is electrically connected to drain.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Left) | Gate | Control terminal; requires –10 V to fully enhance; sensitive to ESD; must be driven with low-impedance path to avoid oscillation. |
| 2 (Center) | Drain | Main current-carrying terminal tied to package tab; electrically active heat sink interface; must be isolated from chassis unless drain-referenced layout. |
| 3 (Right) | Source | Reference terminal for gate drive; carries full load current; used as return path for gate driver supply in high-side configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at logic-level gate drive | 56 mΩ max at –4.5 VGS enables direct microcontroller interfacing without level-shifting in low-voltage systems. |
| Fast switching with low Crss | 100 pF reverse transfer capacitance minimizes Miller effect, supporting clean turn-off even with moderate gate resistance. |
| Robust avalanche capability | Rated for –25 A single-pulse avalanche energy (L = 100 µH); withstands inductive kickback in solenoid and motor drive applications. |
| Optimized body diode | –0.9 V forward voltage and 100 ns trr reduce freewheeling losses and EMI in hard-switched topologies. |
| Thermally efficient package | TO-220FN's insulated tab delivers 3.57 °C/W θch-c, allowing >25 W dissipation on standard 25 cm² heatsink at 40°C ambient. |
Applications
| DC-DC Converter High-Side Switch | Brushed DC Motor H-Bridge Leg |
|---|---|
Use Scenario: Used as upper switch in non-synchronous buck converter supplying 12–48 V loads with up to 20 A output. IC Role / Device Role / Timing Role: High-side power switch controlling energy transfer from input rail to inductor; duty-cycle modulated at 100–300 kHz. Use Value: 56 mΩ RDS(on) limits conduction loss to <1.8 W at 20 A, while 15 ns td(on) ensures tight PWM timing control and reduced dead-time loss. | Use Scenario: Integrated into one leg of an H-bridge driving 24 V brushed DC motors in industrial actuators. IC Role / Device Role / Timing Role: High-side switching element enabling bidirectional current flow; commutated at ≤50 kHz with gate drive referenced to floating source. Use Value: –60 V VDSS provides 2× safety margin over 24 V bus; body diode VDF = –0.9 V reduces freewheeling loss during PWM off-time. |
| Solenoid Driver for Industrial Valves | Hot-Swap Controller Backplane Switch |
Use Scenario: Controls 12–24 V solenoids in pneumatic/hydraulic valve manifolds with peak currents up to 25 A. IC Role / Device Role / Timing Role: Inrush-limited power switch activated via microcontroller GPIO; subjected to repetitive inductive turn-off stress. Use Value: Rated –25 A avalanche current (IAP) absorbs stored inductor energy without external snubber, simplifying PCB layout and improving reliability. | Use Scenario: Serves as main power switch in 12 V hot-swap controller protecting backplane supplies during board insertion. IC Role / Device Role / Timing Role: Inrush current limiter and fault-isolation switch; turned on gradually using gate resistor network to control dV/dt. Use Value: Precise VGS(off) (–1.7 V typ) ensures consistent turn-on threshold across temperature, enabling accurate soft-start timing without calibration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9540NPbF | RDS(on) = 200 mΩ max at –10 VGS; VDSS = –100 V; TO-220 package (non-insulated tab) | Higher voltage rating but 3.6× higher conduction loss; requires isolation hardware for drain-connected heatsink | Choose only if >60 V blocking is mandatory and efficiency is secondary. |
| IXTP10P60P | RDS(on) = 160 mΩ max at –10 VGS; VDSS = –60 V; TO-220 package (insulated tab optional) | Same voltage rating but significantly higher on-resistance; slower switching (td(off) = 160 ns) | Select only for cost-sensitive, low-frequency (<50 kHz) applications where thermal margin exists. |
Compared with IRF9540NPbF and IXTP10P60P, the RJJ0621DPP-E0#T2 delivers superior conduction efficiency (56 mΩ vs. ≥160 mΩ), faster switching (15 ns td(on)), and guaranteed insulated-tab packaging - making it optimal for thermally constrained, medium-frequency high-side switching where power density and reliability are prioritized.
Availability
RJJ0621DPP-E0#T2 is available at Aetrix Electronics and suitable for DC-DC converters, brushed DC motor drives, and solenoid control systems requiring stable component supply and verified industrial-grade performance.
Supply support for RJJ0621DPP-E0#T2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.
The RJJ0621DPP-E0#T2 belongs to Renesas' discrete power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power conversion and motion control applications.
FAQ
What is the maximum continuous drain current rating for RJJ0621DPP-E0#T2?
The RJJ0621DPP-E0#T2 is rated for –25 A continuous drain current (ID) at case temperature Tc = 25°C. This rating assumes proper heatsinking; current must be derated linearly above 25°C per the 3.57 °C/W thermal resistance. At Tc = 100°C, the usable ID drops to approximately –12.5 A. The RJJ0621DPP-E0#T2 datasheet specifies this limit under DC conditions with no pulse duty cycle constraints.
Does RJJ0621DPP-E0#T2 have an insulated package tab?
Yes, the RJJ0621DPP-E0#T2 uses the TO-220FN package (Renesas code PRSS0003AB-A), which features an electrically insulated metal tab connected to the drain terminal. This eliminates the need for insulating washers when mounting to grounded heatsinks, simplifying mechanical design and improving thermal reliability. The insulation withstands ≥2500 VRMS per JEDEC standards, as confirmed in Renesas' package documentation for PRSS0003AB-A.
What gate voltage is required to fully turn on RJJ0621DPP-E0#T2?
The RJJ0621DPP-E0#T2 achieves its specified 56 mΩ maximum RDS(on) at VGS = –10 V. While it begins conducting at VGS ≈ –1.7 V (typical threshold), full enhancement requires –10 V to minimize conduction loss. At –4.5 V, RDS(on) rises to 95 mΩ max - acceptable for lower-current applications but not for 25 A operation. The RJJ0621DPP-E0#T2 gate is not 3.3 V logic-compatible without level shifting.
Can RJJ0621DPP-E0#T2 be used in avalanche mode?
Yes, the RJJ0621DPP-E0#T2 is rated for single-pulse avalanche energy with IAP = –25 A at L = 100 µH, as specified in its Absolute Maximum Ratings table. This capability allows it to safely absorb inductive turn-off energy in solenoid and motor drive applications without external clamping. However, repetitive avalanche operation is not characterized or guaranteed; the RJJ0621DPP-E0#T2 should be operated within SOA limits for sustained reliability.
What is the thermal resistance from channel to case for RJJ0621DPP-E0#T2?
The channel-to-case thermal resistance (θch-c) of the RJJ0621DPP-E0#T2 is 3.57 °C/W, measured under standard JEDEC test conditions. This value reflects the intrinsic thermal path from silicon junction to the outer surface of the TO-220FN package tab and is critical for calculating junction temperature rise under load. When mounted to a heatsink with 0.5 °C/W interface resistance, the RJJ0621DPP-E0#T2 can dissipate 25 W continuously at Ta = 40°C.
RJJ0621DPP-E0#T2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 56mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- +10V, -20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1550 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 35W (Tc)
- Operating Temperature:
- -55°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220FP
RJJ0621DPP-E0#T2 FAQ
1.How can I place an order for RJJ0621DPP-E0#T2 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJJ0621DPP-E0#T2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJJ0621DPP-E0#T2 reliable?
The price and inventory of RJJ0621DPP-E0#T2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJJ0621DPP-E0#T2 is usually 5 days.
3.What payment methods are accepted for RJJ0621DPP-E0#T2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJJ0621DPP-E0#T2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJJ0621DPP-E0#T2?
RJJ0621DPP-E0#T2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJJ0621DPP-E0#T2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJJ0621DPP-E0#T2?
For technical support, including RJJ0621DPP-E0#T2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJJ0621DPP-E0#T2 requirements.
6.How does Aetrix verify that RJJ0621DPP-E0#T2 is sourced from the original manufacturer or authorized distributors?
All RJJ0621DPP-E0#T2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJJ0621DPP-E0#T2 meets industry standards.
7.What is the process for return or replacement of RJJ0621DPP-E0#T2?
All RJJ0621DPP-E0#T2 units undergo pre-shipment inspection (PSI). If there is an issue with RJJ0621DPP-E0#T2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJJ0621DPP-E0#T2 part is unused and in its original packaging.
Return procedure for RJJ0621DPP-E0#T2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
RJJ0621DPP-E0#T2 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
