Renesas RJK0204DPA-WS#J53
- Part No.:
- RJK0204DPA-WS#J53
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
RJK0204DPA-WS#J53.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:

- Shipping:

Inventory:1,950
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Product details
Overview
RJK0204DPA-WS#J53 from Renesas Electronics is a 25 V, 50 A N-channel power MOSFET with integrated Schottky body diode, 2.7 mΩ max RDS(on) at VGS = 10 V, rated for high-speed switching in DC-DC converters and motor drive half-bridges.
For engineers reviewing the RJK0204DPA-WS#J53 datasheet, RJK0204DPA-WS#J53 pinout, RJK0204DPA-WS#J53 application, or RJK0204DPA-WS#J53 equivalent, key selection criteria include its 4.5 V gate drive capability, low 3.1 mΩ RDS(on) at 4.5 V, built-in SBD for reduced reverse recovery loss, and WPAK(3F) thermally enhanced package with 2.5 °C/W θch-c.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low conduction and switching losses in synchronous rectification and high-frequency PWM stages. Its integrated Schottky body diode enables zero-voltage switching (ZVS) compatibility and eliminates external freewheeling diode requirements in buck and half-bridge topologies.
The device supports gate drive down to 4.5 V with guaranteed RDS(on) ≤ 4.0 mΩ, making it suitable for 5 V logic-level control systems. Thermal performance is enhanced by direct die-to-case thermal path in the WPAK(3F) package, enabling 50 W channel dissipation at Tc = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 25 V - Maximum blocking voltage for 12 V input rail applications with margin |
| RDS(on) @ 10 V | 2.7 mΩ max - Enables <1.7 W conduction loss at 50 A continuous current |
| RDS(on) @ 4.5 V | 4.0 mΩ max - Ensures full enhancement with standard 5 V microcontroller GPIO |
| Qg | 22 nC - Supports efficient 500 kHz–1 MHz switching with moderate gate driver strength |
| tr/tf | 7.7 ns / 11 ns - Minimizes switching transition losses in high-frequency SMPS |
| VDF | 0.39 V typ - Low forward drop of integrated Schottky diode reduces freewheeling loss |
| trr | 33 ns - Fast reverse recovery avoids shoot-through risk in synchronous rectifiers |
Pinout & Package
Package: WPAK(3F), Renesas code PWSN0008DE-A - thermally optimized surface-mount package with exposed drain pad, 4.9 mm × 3.92 mm footprint, 1.27 mm height, and 2.5 °C/W channel-to-case thermal resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source connection for all three parallel internal dies; low-inductance multi-pin layout improves current sharing |
| 4 | Gate | Single gate input terminal; 1.8 Ω typical gate resistance limits ringing without external gate resistor |
| 5, 6, 7, 8 | Drain | Four-terminal drain connection tied to exposed copper pad; enables high-current routing and thermal sinking to PCB |
Key Features
| Feature | Design Value |
|---|---|
| Built-in Schottky Body Diode | Eliminates need for external freewheeling diode; reduces BOM count and board area in buck converters |
| 4.5 V Gate Drive Compatibility | Guaranteed on-state operation with standard 5 V logic outputs, avoiding level-shifter complexity |
| Low Qgd/Qg Ratio | 6.2 nC / 22 nC = 0.28 - Improves hard-switching robustness and EMI profile in high-dV/dt environments |
| High Density Mounting | WPAK(3F) package achieves 50 A rating in <20 mm² footprint, supporting compact multi-phase designs |
| Pb-free & Halogen-free Construction | Meets JEDEC J-STD-609A Class 2a and IEC 61249-2-21 standards for RoHS-compliant manufacturing |
Applications
| DC-DC Buck Converter | BLDC Motor Half-Bridge |
|---|---|
Use Scenario: 12 V input to 3.3 V/50 A output point-of-load regulator in telecom base station power supply. IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET operating at 600 kHz PWM frequency with 4.5 V gate drive from controller IC. Use Value: 2.7 mΩ RDS(on) limits conduction loss to 6.75 W; integrated SBD prevents cross-conduction during dead-time. | Use Scenario: Upper switch in 24 V, 3-phase BLDC inverter driving 500 W e-bike hub motor. IC Role / Device Role / Timing Role: High-side N-channel switch in 3-phase inverter leg, driven by isolated gate driver with 5 V logic interface. Use Value: 33 ns trr and 0.39 V VDF minimize freewheeling loss and commutation spikes during PWM modulation. |
| USB PD Power Delivery | Industrial PLC Output Stage |
Use Scenario: 20 V input synchronous rectifier in 100 W USB PD 3.0 adapter secondary side. IC Role / Device Role / Timing Role: Secondary-side synchronous FET controlled by dedicated SR controller with adaptive gate timing. Use Value: Low 22 nC Qg enables fast turn-on/turn-off synchronized to primary-side switching, improving efficiency above 94%. | Use Scenario: Solid-state relay replacement in 24 V DC digital output module handling 40 A inductive loads. IC Role / Device Role / Timing Role: Main power switch with avalanche-rated ruggedness (21 A IAP, 55.1 mJ EAR) for inductive kickback suppression. Use Value: Rated for repetitive avalanche energy up to 55.1 mJ at Tch = 25 °C, eliminating need for external snubbers in relay-replacement designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL3803PBF | Higher RDS(on) (3.1 mΩ @ 10 V), no integrated SBD, TO-220AB package | Lacks built-in diode; requires external freewheeling diode and larger heatsink due to higher thermal resistance | Select when legacy TO-220 layout exists and SBD integration is not required |
| SiR872DP-T1-GE3 | Lower RDS(on) (1.8 mΩ @ 10 V), no integrated SBD, PowerPAK SO-8L package | Superior conduction loss but no body diode; unsuitable for synchronous rectification without external diode | Select for pure switching applications where lowest RDS(on) is critical and diode function is handled separately |
Compared with IRL3803PBF and SiR872DP-T1-GE3, RJK0204DPA-WS#J53 uniquely combines low RDS(on), 4.5 V gate drive, and integrated Schottky diode in a thermally superior WPAK(3F) package-making it optimal for space-constrained, high-efficiency synchronous rectification where diode integration reduces component count and improves reliability.
Availability
RJK0204DPA-WS#J53 is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drives, USB PD adapters, and industrial solid-state relay replacements requiring stable component supply and long-term production continuity.
Supply support for RJK0204DPA-WS#J53 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.
RJK0204DPA-WS#J53 belongs to Renesas' Power MOSFET product line engineered for high-efficiency, high-density power conversion in consumer, computing, and industrial power supplies.
FAQ
What is the maximum continuous drain current rating for RJK0204DPA-WS#J53?
The RJK0204DPA-WS#J53 is rated for 50 A continuous drain current (ID) at Tc = 25 °C. This rating assumes proper PCB copper area for thermal dissipation and is derated linearly above 25 °C case temperature per the power vs. temperature derating curve on page 3 of the datasheet. At Tc = 75 °C, the usable ID drops to approximately 30 A.
Does RJK0204DPA-WS#J53 have an integrated body diode, and what type is it?
Yes, RJK0204DPA-WS#J53 features a built-in Schottky Barrier Diode (SBD) between source and drain. As confirmed on page 1 of the datasheet, this integrated SBD provides low forward voltage (VDF = 0.39 V typ at IF = 2 A) and fast reverse recovery (trr = 33 ns), eliminating the need for an external freewheeling diode in synchronous rectifier applications.
What is the gate threshold voltage range for RJK0204DPA-WS#J53?
The gate-to-source cutoff voltage (VGS(off)) for RJK0204DPA-WS#J53 is specified as 1.2 V minimum to 2.5 V maximum at VDS = 10 V and ID = 1 mA. This ensures reliable turn-on with 4.5 V gate drive while maintaining low leakage (<1 mA) at 3.3 V logic levels, supporting robust noise margin in industrial environments.
Can RJK0204DPA-WS#J53 be used in avalanche mode, and what are its ratings?
Yes, RJK0204DPA-WS#J53 is rated for repetitive avalanche operation with IAP = 21 A and EAR = 55.1 mJ at Tch = 25 °C (Note 2, Absolute Maximum Ratings). These values are measured with Rg ≥ 50 Ω and define safe single-pulse energy handling-enabling use in inductive load switching without external snubbers when properly applied per the avalanche test circuit on page 5.
What is the thermal resistance from channel to case (θch-c) for RJK0204DPA-WS#J53?
The channel-to-case thermal impedance (θch-c) for RJK0204DPA-WS#J53 is 2.5 °C/W, measured under Tc = 25 °C conditions. This value reflects the low-thermal-resistance path from die to the exposed drain pad in the WPAK(3F) package, enabling high-power dissipation when mounted on a 1 oz. copper thermal pad with adequate via stitching per Renesas' recommended layout guidelines.
RJK0204DPA-WS#J53 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
RJK0204DPA-WS#J53 FAQ
1.How can I place an order for RJK0204DPA-WS#J53 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK0204DPA-WS#J53 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of RJK0204DPA-WS#J53 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0204DPA-WS#J53 is usually 5 days.
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5.How can I obtain technical support or documentation for RJK0204DPA-WS#J53?
For technical support, including RJK0204DPA-WS#J53 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0204DPA-WS#J53 requirements.
6.How does Aetrix verify that RJK0204DPA-WS#J53 is sourced from the original manufacturer or authorized distributors?
All RJK0204DPA-WS#J53 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0204DPA-WS#J53 meets industry standards.
7.What is the process for return or replacement of RJK0204DPA-WS#J53?
All RJK0204DPA-WS#J53 units undergo pre-shipment inspection (PSI). If there is an issue with RJK0204DPA-WS#J53, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK0204DPA-WS#J53 part is unused and in its original packaging.
Return procedure for RJK0204DPA-WS#J53:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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