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Renesas RJK0204DPA-WS#J53

Part No.:
RJK0204DPA-WS#J53
Manufacturer:
Renesas
Category:
FETs, MOSFETs
Package:
-
Datasheet:
AetrixRJK0204DPA-WS#J53.pdf
Description:
N-CHANNEL POWER MOSFET
Quantity:
Payment:
Payment
Shipping:
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Inventory:1,950

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Product details

Overview

RJK0204DPA-WS#J53 from Renesas Electronics is a 25 V, 50 A N-channel power MOSFET with integrated Schottky body diode, 2.7 mΩ max RDS(on) at VGS = 10 V, rated for high-speed switching in DC-DC converters and motor drive half-bridges.

For engineers reviewing the RJK0204DPA-WS#J53 datasheet, RJK0204DPA-WS#J53 pinout, RJK0204DPA-WS#J53 application, or RJK0204DPA-WS#J53 equivalent, key selection criteria include its 4.5 V gate drive capability, low 3.1 mΩ RDS(on) at 4.5 V, built-in SBD for reduced reverse recovery loss, and WPAK(3F) thermally enhanced package with 2.5 °C/W θch-c.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction and switching losses in synchronous rectification and high-frequency PWM stages. Its integrated Schottky body diode enables zero-voltage switching (ZVS) compatibility and eliminates external freewheeling diode requirements in buck and half-bridge topologies.

The device supports gate drive down to 4.5 V with guaranteed RDS(on) ≤ 4.0 mΩ, making it suitable for 5 V logic-level control systems. Thermal performance is enhanced by direct die-to-case thermal path in the WPAK(3F) package, enabling 50 W channel dissipation at Tc = 25 °C.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS25 V - Maximum blocking voltage for 12 V input rail applications with margin
RDS(on) @ 10 V2.7 mΩ max - Enables <1.7 W conduction loss at 50 A continuous current
RDS(on) @ 4.5 V4.0 mΩ max - Ensures full enhancement with standard 5 V microcontroller GPIO
Qg22 nC - Supports efficient 500 kHz–1 MHz switching with moderate gate driver strength
tr/tf7.7 ns / 11 ns - Minimizes switching transition losses in high-frequency SMPS
VDF0.39 V typ - Low forward drop of integrated Schottky diode reduces freewheeling loss
trr33 ns - Fast reverse recovery avoids shoot-through risk in synchronous rectifiers

Pinout & Package

Package: WPAK(3F), Renesas code PWSN0008DE-A - thermally optimized surface-mount package with exposed drain pad, 4.9 mm × 3.92 mm footprint, 1.27 mm height, and 2.5 °C/W channel-to-case thermal resistance.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3SourceCommon source connection for all three parallel internal dies; low-inductance multi-pin layout improves current sharing
4GateSingle gate input terminal; 1.8 Ω typical gate resistance limits ringing without external gate resistor
5, 6, 7, 8DrainFour-terminal drain connection tied to exposed copper pad; enables high-current routing and thermal sinking to PCB

Key Features

FeatureDesign Value
Built-in Schottky Body DiodeEliminates need for external freewheeling diode; reduces BOM count and board area in buck converters
4.5 V Gate Drive CompatibilityGuaranteed on-state operation with standard 5 V logic outputs, avoiding level-shifter complexity
Low Qgd/Qg Ratio6.2 nC / 22 nC = 0.28 - Improves hard-switching robustness and EMI profile in high-dV/dt environments
High Density MountingWPAK(3F) package achieves 50 A rating in <20 mm² footprint, supporting compact multi-phase designs
Pb-free & Halogen-free ConstructionMeets JEDEC J-STD-609A Class 2a and IEC 61249-2-21 standards for RoHS-compliant manufacturing

Applications

DC-DC Buck ConverterBLDC Motor Half-Bridge

Use Scenario: 12 V input to 3.3 V/50 A output point-of-load regulator in telecom base station power supply.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET operating at 600 kHz PWM frequency with 4.5 V gate drive from controller IC.

Use Value: 2.7 mΩ RDS(on) limits conduction loss to 6.75 W; integrated SBD prevents cross-conduction during dead-time.

Use Scenario: Upper switch in 24 V, 3-phase BLDC inverter driving 500 W e-bike hub motor.

IC Role / Device Role / Timing Role: High-side N-channel switch in 3-phase inverter leg, driven by isolated gate driver with 5 V logic interface.

Use Value: 33 ns trr and 0.39 V VDF minimize freewheeling loss and commutation spikes during PWM modulation.

USB PD Power DeliveryIndustrial PLC Output Stage

Use Scenario: 20 V input synchronous rectifier in 100 W USB PD 3.0 adapter secondary side.

IC Role / Device Role / Timing Role: Secondary-side synchronous FET controlled by dedicated SR controller with adaptive gate timing.

Use Value: Low 22 nC Qg enables fast turn-on/turn-off synchronized to primary-side switching, improving efficiency above 94%.

Use Scenario: Solid-state relay replacement in 24 V DC digital output module handling 40 A inductive loads.

IC Role / Device Role / Timing Role: Main power switch with avalanche-rated ruggedness (21 A IAP, 55.1 mJ EAR) for inductive kickback suppression.

Use Value: Rated for repetitive avalanche energy up to 55.1 mJ at Tch = 25 °C, eliminating need for external snubbers in relay-replacement designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRL3803PBFHigher RDS(on) (3.1 mΩ @ 10 V), no integrated SBD, TO-220AB packageLacks built-in diode; requires external freewheeling diode and larger heatsink due to higher thermal resistanceSelect when legacy TO-220 layout exists and SBD integration is not required
SiR872DP-T1-GE3Lower RDS(on) (1.8 mΩ @ 10 V), no integrated SBD, PowerPAK SO-8L packageSuperior conduction loss but no body diode; unsuitable for synchronous rectification without external diodeSelect for pure switching applications where lowest RDS(on) is critical and diode function is handled separately

Compared with IRL3803PBF and SiR872DP-T1-GE3, RJK0204DPA-WS#J53 uniquely combines low RDS(on), 4.5 V gate drive, and integrated Schottky diode in a thermally superior WPAK(3F) package-making it optimal for space-constrained, high-efficiency synchronous rectification where diode integration reduces component count and improves reliability.

Availability

RJK0204DPA-WS#J53 is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drives, USB PD adapters, and industrial solid-state relay replacements requiring stable component supply and long-term production continuity.

Supply support for RJK0204DPA-WS#J53 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

RJK0204DPA-WS#J53 belongs to Renesas' Power MOSFET product line engineered for high-efficiency, high-density power conversion in consumer, computing, and industrial power supplies.

FAQ

What is the maximum continuous drain current rating for RJK0204DPA-WS#J53?

The RJK0204DPA-WS#J53 is rated for 50 A continuous drain current (ID) at Tc = 25 °C. This rating assumes proper PCB copper area for thermal dissipation and is derated linearly above 25 °C case temperature per the power vs. temperature derating curve on page 3 of the datasheet. At Tc = 75 °C, the usable ID drops to approximately 30 A.

Does RJK0204DPA-WS#J53 have an integrated body diode, and what type is it?

Yes, RJK0204DPA-WS#J53 features a built-in Schottky Barrier Diode (SBD) between source and drain. As confirmed on page 1 of the datasheet, this integrated SBD provides low forward voltage (VDF = 0.39 V typ at IF = 2 A) and fast reverse recovery (trr = 33 ns), eliminating the need for an external freewheeling diode in synchronous rectifier applications.

What is the gate threshold voltage range for RJK0204DPA-WS#J53?

The gate-to-source cutoff voltage (VGS(off)) for RJK0204DPA-WS#J53 is specified as 1.2 V minimum to 2.5 V maximum at VDS = 10 V and ID = 1 mA. This ensures reliable turn-on with 4.5 V gate drive while maintaining low leakage (<1 mA) at 3.3 V logic levels, supporting robust noise margin in industrial environments.

Can RJK0204DPA-WS#J53 be used in avalanche mode, and what are its ratings?

Yes, RJK0204DPA-WS#J53 is rated for repetitive avalanche operation with IAP = 21 A and EAR = 55.1 mJ at Tch = 25 °C (Note 2, Absolute Maximum Ratings). These values are measured with Rg ≥ 50 Ω and define safe single-pulse energy handling-enabling use in inductive load switching without external snubbers when properly applied per the avalanche test circuit on page 5.

What is the thermal resistance from channel to case (θch-c) for RJK0204DPA-WS#J53?

The channel-to-case thermal impedance (θch-c) for RJK0204DPA-WS#J53 is 2.5 °C/W, measured under Tc = 25 °C conditions. This value reflects the low-thermal-resistance path from die to the exposed drain pad in the WPAK(3F) package, enabling high-power dissipation when mounted on a 1 oz. copper thermal pad with adequate via stitching per Renesas' recommended layout guidelines.

RJK0204DPA-WS#J53 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
FET Type:
-
Technology:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

RJK0204DPA-WS#J53 FAQ

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Please submit a Request for Quotation (RFQ) for RJK0204DPA-WS#J53 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of RJK0204DPA-WS#J53 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0204DPA-WS#J53 is usually 5 days.

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RJK0204DPA-WS#J53 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RJK0204DPA-WS#J53 order is processed, you will receive an email with the shipment details and tracking number.

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5.How can I obtain technical support or documentation for RJK0204DPA-WS#J53?

For technical support, including RJK0204DPA-WS#J53 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0204DPA-WS#J53 requirements.

6.How does Aetrix verify that RJK0204DPA-WS#J53 is sourced from the original manufacturer or authorized distributors?

All RJK0204DPA-WS#J53 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0204DPA-WS#J53 meets industry standards.

7.What is the process for return or replacement of RJK0204DPA-WS#J53?

All RJK0204DPA-WS#J53 units undergo pre-shipment inspection (PSI). If there is an issue with RJK0204DPA-WS#J53, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RJK0204DPA-WS#J53 part is unused and in its original packaging.

Return procedure for RJK0204DPA-WS#J53:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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