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Renesas RJK0213DPA-00#J53
- Part No.:
- RJK0213DPA-00#J53
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
RJK0213DPA-00#J53.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:108,000
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Product details
Overview
RJK0213DPA-00#J53 from Renesas Electronics is a silicon N-channel power MOSFET with integrated Schottky barrier diode, designed for high-efficiency DC-DC power switching in automotive and industrial DC/DC converters. It delivers RDS(on) = 1.85 mΩ (typ. at VGS = 10 V), supports 4.5 V gate drive, and handles 60 A continuous drain current with 25 V VDSS.
For engineers reviewing the RJK0213DPA-00#J53 datasheet, RJK0213DPA-00#J53 pinout, RJK0213DPA-00#J53 application, or RJK0213DPA-00#J53 equivalent, key selection criteria include low on-resistance at 4.5 V gate drive, integrated body diode performance (VDF = 0.39 V at IF = 2 A), and avalanche ruggedness (EAR = 66.1 mJ).
Technical Context
This MOSFET employs a trench-gate process optimized for low RDS(on) and fast switching, enabling high-density synchronous rectification in buck converters. Its integrated Schottky diode reduces reverse recovery losses versus conventional body diodes, with trr = 40 ns at IF = 60 A and diF/dt = 100 A/μs.
The device operates within a channel temperature range of –55°C to +150°C and features Pb-free, halogen-free construction. Thermal resistance θch-c = 2.27°C/W enables high-power operation with minimal heatsinking when mounted on a 2-layer PCB with 1-in² copper area.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 25 V - Maximum blocking voltage for 12 V automotive and 24 V industrial bus applications |
| RDS(on) @ VGS = 10 V | 1.85 mΩ typ. - Enables <1 W conduction loss at 30 A, critical for high-current point-of-load regulation |
| RDS(on) @ VGS = 4.5 V | 2.5 mΩ max. - Ensures reliable turn-on with standard logic-level drivers without level-shifting |
| ID (continuous) | 60 A - Supports high-current output stages in server VRMs and EV auxiliary power modules |
| Qg | 26 nC - Low gate charge minimizes driver power and enables >1 MHz switching in resonant topologies |
| VDF (diode) | 0.39 V typ. at IF = 2 A - Reduces forward conduction loss vs. standard MOSFET body diode by ~30% |
| tr/tf | 7.9 ns / 14 ns - Fast edge rates support high-frequency PWM control with reduced EMI filtering burden |
Pinout & Package
Package: WPAK(2) (RENESAS code PWSN0008DC-A), surface-mount, thermally enhanced leadframe with exposed drain pad. Dimensions: 5.9 mm × 4.21 mm × 0.8 mm max, mass 0.07 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source connection for internal MOSFET and Schottky diode; tied to PCB ground plane for thermal and electrical return |
| 4 | Gate | Control input requiring ≤0.5 μA leakage; driven by logic-level PWM controller with 4.7 Ω series resistor per switching test circuit |
| 5, 6, 7, 8 | Drain | High-current power output node; electrically and thermally connected to exposed die-pad for low-inductance, low-thermal-resistance path |
Key Features
| Feature | Design Value |
|---|---|
| Integrated Schottky barrier diode | Eliminates need for external freewheeling diode in synchronous buck designs, reducing BOM count and board area |
| Logic-level gate drive (4.5 V) | Direct interface with microcontroller GPIO or standard PWM controllers without gate driver ICs |
| Low RDS(on) at 10 V | Minimizes I²R conduction loss in high-current paths-critical for efficiency in battery-powered systems |
| Avalanche-rated (IAP = 23 A, EAR = 66.1 mJ) | Withstands inductive energy spikes during hard-switching events without failure, improving system robustness |
| Pb-free and halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-609A Class 1 moisture sensitivity |
Applications
| Automotive DC/DC Converters | Industrial Motor Drive Gate Drivers |
|---|---|
Use Scenario: 12 V to 5 V/3.3 V step-down conversion for infotainment and ADAS ECUs in vehicles with wide input transients. IC Role / Device Role / Timing Role: Primary synchronous rectifier MOSFET in high-side buck converter stage, operating at 300–500 kHz. Use Value: Low RDS(on) and 4.5 V gate compatibility ensure stable regulation under cold-crank (6 V) and load-dump (40 V) conditions without gate boosting. | Use Scenario: High-current half-bridge gate drive supply in servo inverters, powering isolated gate drivers for IGBTs/MOSFETs. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated flyback or forward converter delivering 12 V/2 A to gate driver ICs. Use Value: Integrated Schottky diode eliminates reverse recovery loss, enabling clean gate drive waveforms and reducing EMI during fast switching transitions. |
| Server Point-of-Load (PoL) Regulators | EV Auxiliary Power Modules (APM) |
Use Scenario: 48 V to 12 V intermediate bus conversion in AI accelerator racks requiring >100 A per phase. IC Role / Device Role / Timing Role: Low-side switch in multiphase buck converter with digital PWM controller and phase interleaving. Use Value: 60 A rating and 2.27°C/W θch-c allow parallel operation with minimal thermal derating on standard 2-layer PCBs. | Use Scenario: 400 V battery to 12 V/14 V auxiliary supply in battery electric vehicles, powering lighting, HVAC, and telematics. IC Role / Device Role / Timing Role: Synchronous rectifier in LLC resonant converter secondary side, operating at 300–700 kHz. Use Value: Avalanche rating and 150°C Tch support operation in under-hood environments with ambient up to 105°C and transient overvoltage stress. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar power MOSFET with integrated diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF67221TRPbF | RDS(on) = 2.0 mΩ @ 10 V; no integrated Schottky diode; TO-263 package | Requires external Schottky for freewheeling; higher thermal resistance (θJA ≈ 40°C/W vs. 2.27°C/W case-to-ambient effective) | Select when cost sensitivity outweighs board space and thermal constraints; verify external diode timing matches trr = 40 ns requirement. |
| STL220N4F7AG | RDS(on) = 1.7 mΩ @ 10 V; integrated Schottky; same WPAK(2) footprint but different pinout (drain/source swapped) | Not pin-compatible-requires PCB redesign due to reversed terminal assignment; higher Qg (34 nC) | Consider only for new designs where layout flexibility exists; avoid drop-in replacement due to pinout mismatch and gate drive timing differences. |
Compared with IRF67221TRPbF and STL220N4F7AG, the RJK0213DPA-00#J53 uniquely combines verified 4.5 V gate drive capability, integrated Schottky diode with 40 ns trr, and WPAK(2) package thermal performance-making it optimal for space-constrained, high-reliability DC/DC stages where gate driver simplicity and avalanche margin are design priorities.
Availability
RJK0213DPA-00#J53 is available at Aetrix Electronics and suitable for automotive DC/DC converters, industrial motor drive gate drivers, and EV auxiliary power modules requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for RJK0213DPA-00#J53 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.
The RJK0213DPA-00#J53 belongs to Renesas' WPAK(2) power MOSFET family, engineered specifically for high-current, high-efficiency DC/DC conversion in thermally demanding environments where low RDS(on), fast switching, and integrated diode functionality are essential.
FAQ
What is the maximum continuous drain current rating for RJK0213DPA-00#J53?
The RJK0213DPA-00#J53 is rated for 60 A continuous drain current (ID) at Tc = 25°C. Derating applies above 25°C case temperature per the power vs. temperature derating curve on page 3 of the datasheet; at Tc = 100°C, usable ID drops to approximately 30 A. This rating assumes proper PCB copper area and thermal vias to maintain case temperature.
Does RJK0213DPA-00#J53 support logic-level gate drive?
Yes, the RJK0213DPA-00#J53 is explicitly characterized for 4.5 V gate drive, with RDS(on) = 2.5 mΩ (max) at VGS = 4.5 V and ID = 30 A. This allows direct interfacing with 3.3 V or 5 V logic outputs without external level-shifting, simplifying gate driver design in compact power supplies.
What is the purpose of the integrated Schottky barrier diode in RJK0213DPA-00#J53?
The integrated Schottky barrier diode in the RJK0213DPA-00#J53 replaces the parasitic body diode, offering lower forward voltage (VDF = 0.39 V typ. at IF = 2 A) and negligible reverse recovery time (trr = 40 ns). This reduces switching losses and EMI in synchronous rectifier applications such as buck converters and active clamp circuits.
Is RJK0213DPA-00#J53 suitable for automotive applications?
Yes, the RJK0213DPA-00#J53 meets AEC-Q101 stress test requirements for discrete semiconductors and is qualified for "Standard" quality grade per Renesas' classification-covering automotive infotainment, ADAS, and body electronics. Its 150°C channel temperature rating, avalanche energy (66.1 mJ), and operation across –55°C to +150°C support under-hood and cabin deployment.
What is the thermal resistance from channel to case (θch-c) for RJK0213DPA-00#J53?
The RJK0213DPA-00#J53 has a channel-to-case thermal impedance (θch-c) of 2.27°C/W, measured at Tc = 25°C. This low value reflects the WPAK(2) package's exposed drain pad design, enabling efficient heat transfer to the PCB. Effective θJA depends on board layout-minimum recommended copper area is 1 in² with 6+ thermal vias under the drain pad.
RJK0213DPA-00#J53 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
RJK0213DPA-00#J53 FAQ
1.How can I place an order for RJK0213DPA-00#J53 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK0213DPA-00#J53 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK0213DPA-00#J53 reliable?
The price and inventory of RJK0213DPA-00#J53 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0213DPA-00#J53 is usually 5 days.
3.What payment methods are accepted for RJK0213DPA-00#J53?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK0213DPA-00#J53 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK0213DPA-00#J53?
RJK0213DPA-00#J53 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK0213DPA-00#J53 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK0213DPA-00#J53?
For technical support, including RJK0213DPA-00#J53 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0213DPA-00#J53 requirements.
6.How does Aetrix verify that RJK0213DPA-00#J53 is sourced from the original manufacturer or authorized distributors?
All RJK0213DPA-00#J53 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0213DPA-00#J53 meets industry standards.
7.What is the process for return or replacement of RJK0213DPA-00#J53?
All RJK0213DPA-00#J53 units undergo pre-shipment inspection (PSI). If there is an issue with RJK0213DPA-00#J53, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK0213DPA-00#J53 part is unused and in its original packaging.
Return procedure for RJK0213DPA-00#J53:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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