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Renesas RJK0216DPA-WS#J53
- Part No.:
- RJK0216DPA-WS#J53
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
RJK0216DPA-WS#J53.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
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Inventory:2,135
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Product details
Overview
RJK0216DPA-WS#J53 from Renesas Electronics is a dual-channel silicon N-channel power MOSFET with integrated Schottky barrier diode in a WPAK-D(2) package, designed for high-speed synchronous rectification and DC-DC conversion. It features 25 V VDSS, 7.6 mΩ RDS(on) (MOS1 @ 10 V), 3.6 mΩ RDS(on) (MOS2 @ 10 V), and supports 4.5 V gate drive - enabling efficient operation in server and PC point-of-load regulators.
For engineers reviewing the RJK0216DPA-WS#J53 datasheet, RJK0216DPA-WS#J53 pinout, RJK0216DPA-WS#J53 application, or RJK0216DPA-WS#J53 equivalent, key selection criteria include dual-channel RDS(on) asymmetry, integrated Schottky diode VF of 0.39 V (IF = 2 A), thermal resistance θch–c = 6.25°C/W (MOS2), and WPAK-D(2) footprint compatibility with high-density board layouts.
Technical Context
This device integrates two discrete N-channel MOSFETs - MOS1 (15 A ID, 10 W Pch) and MOS2 (32 A ID, 20 W Pch) - sharing a common source terminal configuration and thermally optimized WPAK-D(2) leadframe. The MOS2 channel includes an integrated Schottky barrier diode with 0.39 V forward voltage at 2 A, enabling low-loss freewheeling in buck converters.
Its gate drive compatibility down to 4.5 V allows direct interfacing with standard logic-level controllers, while asymmetric RDS(on) values (7.6 mΩ / 3.6 mΩ @ 10 V) support optimized high-side/low-side switching roles. The device uses Ni/Pd/Au plating and meets Pb-free and halogen-free requirements per JEDEC standards.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 25 V - Maximum blocking voltage for both MOS channels; suitable for 12 V input DC-DC stages. |
| RDS(on) MOS1 | 7.6 mΩ @ 10 V - Enables <1.5 W conduction loss at 15 A, critical for high-efficiency primary-side switching. |
| RDS(on) MOS2 | 3.6 mΩ @ 10 V - Supports <1.2 W loss at 32 A, ideal for high-current synchronous rectification. |
| VF Schottky | 0.39 V @ 2 A - Reduces reverse recovery losses vs. body diode; eliminates need for external Schottky in compact designs. |
| Qg MOS2 | 11.6 nC - Determines gate drive power requirement; enables fast turn-on with moderate driver strength. |
| θch–c | 6.25°C/W - Thermal resistance from channel to case; enables 20 W dissipation with ≤125°C case temperature rise. |
| tr/tf | 5.3 ns / 5.9 ns - Fast switching transitions minimize overlap loss in high-frequency (>500 kHz) converters. |
Pinout & Package
Package: WPAK-D(2), RENESAS code PWSN0008DD-A, 9-terminal exposed-pad surface-mount package with Ni/Pd/Au plating and 0.07 g mass. Dimensions: 5.1 mm × 4.9 mm × 0.8 mm max, 1.27 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 8 | Gate (MOS1) | Independent control input for first MOSFET channel; requires dedicated gate resistor for EMI control. |
| 2, 3, 4, 9 | Drain (MOS1 & MOS2) | Common drain connection for both FETs; serves as high-side switch node in half-bridge configurations. |
| 5, 6, 7, 9 | Source (MOS1 & MOS2) | Shared source terminal; connects to power ground plane and provides thermal path via exposed pad. |
| 9 | Drain/Source common | Multi-functional terminal used for both drain (MOS1/MOS2) and source (MOS1/MOS2); requires careful PCB routing to avoid coupling. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated Schottky diode | 0.39 V VF at 2 A enables zero-recovery-loss freewheeling without external diode placement or layout area. |
| 4.5 V gate drive capability | Ensures full enhancement with standard logic-level PWM controllers, eliminating level-shifters in 5 V/3.3 V systems. |
| Asymmetric RDS(on) pairing | 7.6 mΩ (MOS1) + 3.6 mΩ (MOS2) optimizes conduction loss distribution across high-side/low-side roles in buck topologies. |
| WPAK-D(2) thermal design | Exposed copper pad and low θch–c (6.25°C/W) allow >20 W power handling without heatsink in 1 oz Cu PCBs. |
| Pb-free & halogen-free construction | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 2a (260°C reflow). |
Applications
| Server VRM Output Stage | PC ATX 12V-to-1.2V Converter |
|---|---|
Use Scenario: High-current, high-efficiency voltage regulation for CPU core power delivery in dual-socket servers. IC Role / Device Role / Timing Role: Dual-channel synchronous rectifier where MOS2 handles 32 A output current and MOS1 controls high-side switching timing. Use Value: 3.6 mΩ RDS(on) reduces conduction loss by 40% vs. discrete 5 mΩ FETs, improving full-load efficiency by ≥0.8% at 200 A total output. | Use Scenario: Compact 12 V input buck converter supplying GPU and chipset rails in modern ATX PSUs. IC Role / Device Role / Timing Role: Integrated power stage combining high-side switch and low-side synchronous rectifier with shared thermal path. Use Value: Eliminates two discrete FETs and one Schottky diode, reducing BOM count by 3 parts and saving 24 mm² PCB area per phase. |
| Industrial PLC Power Module | Network Switch PoL Regulator |
Use Scenario: 24 V input DC-DC conversion for I/O module logic and sensor bias supplies in programmable logic controllers. IC Role / Device Role / Timing Role: Primary switching element in isolated flyback secondary-side synchronous rectification, leveraging integrated Schottky for light-load ZVS. Use Value: 0.39 V Schottky VF cuts reverse recovery energy by 92% vs. body diode, enabling >94% efficiency at 10% load in 500 kHz designs. | Use Scenario: Point-of-load regulator powering 12-core Ethernet PHYs and SerDes interfaces in 10G/25G switches. IC Role / Device Role / Timing Role: Dual-phase interleaved buck power stage where each RJK0216DPA-WS#J53 serves one phase with independent gate control. Use Value: Asymmetric RDS(on) allows MOS1 to handle transient peak currents while MOS2 sustains steady-state load, extending safe operating area during burst-mode operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-MOSFET-with-integrated-Schottky applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | 30 V VDSS, 4.0 mΩ RDS(on) (MOS2), no integrated Schottky; SO-8FL package with higher θJA. | Requires external Schottky diode; better suited for 24 V industrial inputs but lacks monolithic integration. | Select when higher voltage margin is needed and board space permits discrete diode placement. |
| IPB80N04S4-02 | Single-channel 40 V MOSFET, 2.0 mΩ RDS(on), TO-263 package; no Schottky, no dual-gate structure. | Cannot replace dual-channel functionality; requires two devices plus external diode for same topology. | Choose only for redesigns where layout allows larger footprint and separate gate drive routing. |
Compared with SiR872DP-T1-GE3 and IPB80N04S4-02, RJK0216DPA-WS#J53 delivers monolithic integration of dual MOSFETs and Schottky diode in a thermally superior WPAK-D(2) package - reducing component count, PCB area, and thermal interface complexity for 12 V–24 V DC-DC applications requiring ≤32 A per channel.
Availability
RJK0216DPA-WS#J53 is available at Aetrix Electronics and suitable for server VRMs, PC ATX converters, industrial PLC power modules, and network switch PoL regulators requiring stable component supply and long-term production continuity.
Supply support for RJK0216DPA-WS#J53 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and mixed-signal ICs for automotive, industrial, and computing markets.
RJK0216DPA-WS#J53 belongs to Renesas' WPAK-series power MOSFET family, engineered specifically for high-density, high-efficiency DC-DC conversion in datacenter and client computing infrastructure.
FAQ
What is the maximum continuous drain current rating for each MOSFET channel in RJK0216DPA-WS#J53?
RJK0216DPA-WS#J53 specifies 15 A for MOS1 and 32 A for MOS2 under Tc = 25°C conditions. These ratings assume proper PCB copper area for thermal dissipation and are derated linearly above 25°C case temperature per the power vs. temperature derating curve on page 4 of the datasheet. Actual usable current depends on layout, ambient temperature, and airflow.
Does RJK0216DPA-WS#J53 include a body diode or a Schottky barrier diode - and which channel does it serve?
RJK0216DPA-WS#J53 integrates a Schottky barrier diode exclusively in parallel with MOS2, not a parasitic body diode. Its forward voltage is 0.39 V at 2 A (VGS = 0), as confirmed on page 3 of the datasheet. This diode replaces the MOS2 body diode for lower loss and zero reverse recovery charge in synchronous rectification applications.
Can RJK0216DPA-WS#J53 be driven directly by a 3.3 V microcontroller GPIO without a gate driver?
No - RJK0216DPA-WS#J53 requires minimum 4.5 V gate drive for guaranteed RDS(on) performance, and its VGS(off) range (1.2–2.5 V) means 3.3 V may result in partial enhancement and excessive conduction loss. A dedicated gate driver or level shifter is required to deliver ≥4.5 V to pins 1 and 8 for reliable switching in RJK0216DPA-WS#J53-based designs.
What is the thermal resistance from channel to case (θch–c) for RJK0216DPA-WS#J53, and how is it distributed between channels?
RJK0216DPA-WS#J53 has θch–c = 12.5°C/W for MOS1 and 6.25°C/W for MOS2, as specified on pages 6 and 9 of the datasheet. The lower value for MOS2 reflects its larger die size and optimized thermal path within the WPAK-D(2) package, enabling higher power dissipation in the main output switch channel of RJK0216DPA-WS#J53.
Is RJK0216DPA-WS#J53 suitable for automotive applications such as ADAS power supplies?
RJK0216DPA-WS#J53 is rated as a Standard-grade Renesas product intended for computers, office equipment, and communications systems per datasheet note 7. It is not qualified to AEC-Q101 or rated for automotive temperature ranges (−40°C to 125°C), and its storage temperature limit is −55°C to +150°C - making RJK0216DPA-WS#J53 unsuitable for under-hood automotive use without additional qualification testing.
RJK0216DPA-WS#J53 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
RJK0216DPA-WS#J53 FAQ
1.How can I place an order for RJK0216DPA-WS#J53 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK0216DPA-WS#J53 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK0216DPA-WS#J53 reliable?
The price and inventory of RJK0216DPA-WS#J53 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0216DPA-WS#J53 is usually 5 days.
3.What payment methods are accepted for RJK0216DPA-WS#J53?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK0216DPA-WS#J53 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK0216DPA-WS#J53?
RJK0216DPA-WS#J53 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK0216DPA-WS#J53 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK0216DPA-WS#J53?
For technical support, including RJK0216DPA-WS#J53 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0216DPA-WS#J53 requirements.
6.How does Aetrix verify that RJK0216DPA-WS#J53 is sourced from the original manufacturer or authorized distributors?
All RJK0216DPA-WS#J53 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0216DPA-WS#J53 meets industry standards.
7.What is the process for return or replacement of RJK0216DPA-WS#J53?
All RJK0216DPA-WS#J53 units undergo pre-shipment inspection (PSI). If there is an issue with RJK0216DPA-WS#J53, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK0216DPA-WS#J53 part is unused and in its original packaging.
Return procedure for RJK0216DPA-WS#J53:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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