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Renesas RJK0226DNS-WS#J5
- Part No.:
- RJK0226DNS-WS#J5
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
RJK0226DNS-WS#J5.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:2,600
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Product details
Overview
RJK0226DNS-WS#J5 from Renesas Electronics is a silicon N-channel power MOSFET with integrated Schottky barrier diode, designed for high-efficiency DC-DC converter synchronous rectification and load switching in portable power systems. It delivers 2.3 mΩ typical RDS(on) at VGS = 8 V, supports 4.5 V gate drive, and handles 40 A continuous drain current with 25 V VDSS.
For engineers reviewing the RJK0226DNS-WS#J5 datasheet, RJK0226DNS-WS#J5 pinout, RJK0226DNS-WS#J5 application, or RJK0226DNS-WS#J5 equivalent, this page provides verified package mapping, validated thermal and switching parameters, confirmed body-diode performance (VDF = 0.39 V at IF = 2 A), and real-world alternative part comparisons for power stage design.
Technical Context
This MOSFET employs trench-gate silicon process technology optimized for low conduction loss and fast switching in high-frequency synchronous buck converters. Its integrated Schottky diode enables zero-voltage switching recovery with 28 ns trr, reducing body-diode conduction loss during dead-time intervals.
The device operates with ±12 V gate-source voltage rating and exhibits 31 nC total gate charge, enabling efficient drive with standard PWM controllers. Thermal design is supported by 4.17 °C/W channel-to-case impedance and 150 °C maximum channel temperature, validated under Tc = 25 °C conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 25 V - Maximum blocking voltage for 3.3 V/5 V input DC-DC stages |
| RDS(on) typ. | 2.3 mΩ at VGS = 8 V - Enables <1.2 W conduction loss at 20 A output |
| ID continuous | 40 A - Supports high-current POL converters up to 100 W with adequate heatsinking |
| tr/tf | 8.7 ns / 13 ns - Minimizes switching transition losses in >500 kHz designs |
| VDF | 0.39 V at IF = 2 A - Reduces reverse-conduction loss vs. standard body diode |
| Qg | 31 nC - Compatible with standard gate drivers without requiring external boost circuitry |
| θch-c | 4.17 °C/W - Allows direct thermal coupling to PCB copper for compact thermal management |
Pinout & Package
Package: 8-pin HVSON(3333), 3.3 mm × 3.3 mm × 0.8 mm, exposed drain pad for thermal enhancement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source connection for internal MOSFET and integrated Schottky cathode |
| 4 | Gate | Control terminal; accepts 4.5–8 V logic-level drive with ±12 V absolute max rating |
| 5, 6, 7, 8 | Drain | High-side switch node; electrically tied to exposed thermal pad for low-inductance power path |
Key Features
| Feature | Design Value |
|---|---|
| Integrated Schottky barrier diode | Enables synchronous rectification without external diode; reduces board area and BOM count |
| 4.5 V gate drive capability | Direct interface with 3.3 V/5 V microcontroller GPIO or PWM controller outputs |
| Low RDS(on) × Qg figure of merit | Optimized for high-frequency operation with minimal combined conduction and switching loss |
| Pb-free and halogen-free construction | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile requirements |
| High-density mounting | 3.3 mm × 3.3 mm footprint supports miniaturized power modules and ultra-thin end equipment |
Applications
| DC-DC Synchronous Rectifier | Load Switch for Portable Devices |
|---|---|
|
Use Scenario: Secondary-side rectification in 3.3 V/5 V buck converters for smartphones and tablets. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing discrete Schottky diode; switches in anti-phase with high-side FET. Use Value: Achieves >95% efficiency at 20 A output by eliminating 0.4 V diode drop and leveraging 2.3 mΩ RDS(on). |
Use Scenario: Power enable/disable control for USB-C PD sink rails and display backlight supplies. IC Role / Device Role / Timing Role: Single-N-channel load switch with integrated reverse-blocking diode for fault-tolerant rail sequencing. Use Value: Prevents backfeed during hot-plug events using intrinsic body-diode orientation and supports 40 A inrush current handling. |
| Motor Driver Half-Bridge Leg | Hot-Swap Controller Protection Element |
|
Use Scenario: Low-side switch in 12 V BLDC motor gate driver IC auxiliary power stages. IC Role / Device Role / Timing Role: High-current, low-loss switching element in half-bridge configuration with fast turn-off (65 ns td(off)). Use Value: Limits shoot-through risk via 13 ns fall time and supports 160 A pulsed current for motor stall protection. |
Use Scenario: OR-ing diode replacement in redundant 5 V/12 V power supply backplanes. IC Role / Device Role / Timing Role: Active OR-ing FET with integrated Schottky for reverse-current blocking and low forward drop. Use Value: Reduces power dissipation by 60% vs. discrete 40 V Schottky diode at 20 A load current. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET with integrated Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | RDS(on) = 2.0 mΩ @ 10 V (lower), but requires 10 V gate drive; no integrated Schottky | Lacks integrated diode - needs external Schottky for synchronous rectification | Prefer when higher gate voltage is available and discrete diode placement is acceptable |
| IRF7759L2TRPBF | RDS(on) = 2.5 mΩ @ 10 V; includes integrated Schottky but rated for 30 V VDSS | Higher VDSS margin allows use in 12 V input systems where RJK0226DNS-WS#J5 is limited to ≤25 V | Select when system input exceeds 25 V or requires broader voltage derating margin |
Compared with SiR872DP-T1-GE3 and IRF7759L2TRPBF, the RJK0226DNS-WS#J5 uniquely combines 4.5 V gate drive compatibility, integrated Schottky diode, and 25 V rating - making it optimal for space-constrained 3.3 V/5 V synchronous buck converters where gate drive voltage headroom and component count are critical.
Availability
RJK0226DNS-WS#J5 is available at Aetrix Electronics and suitable for DC-DC synchronous rectifiers, portable device load switches, and motor driver half-bridge legs requiring stable component supply, consistent parametric performance, and RoHS-compliant packaging.
Supply support for RJK0226DNS-WS#J5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and consumer markets.
The RJK0226DNS-WS#J5 belongs to Renesas' low-voltage power MOSFET family engineered specifically for high-efficiency, high-density DC-DC conversion in battery-powered and space-constrained applications.
FAQ
What is the maximum continuous drain current rating for RJK0226DNS-WS#J5?
The RJK0226DNS-WS#J5 is rated for 40 A continuous drain current (ID) at Tc = 25 °C, with derating to zero at 150 °C channel temperature. This rating assumes proper PCB copper area for thermal conduction and is validated per the Absolute Maximum Ratings table in the R07DS0260EJ0110 datasheet. The RJK0226DNS-WS#J5 achieves this with its 4.17 °C/W channel-to-case thermal impedance and exposed drain pad design.
Does RJK0226DNS-WS#J5 include an integrated Schottky diode, and what is its forward voltage?
Yes, the RJK0226DNS-WS#J5 integrates a Schottky barrier diode between source and drain. Its forward voltage (VDF) is 0.39 V typical at IF = 2 A and VGS = 0, as specified in the Electrical Characteristics table. This diode enables synchronous rectification without external components and improves efficiency over conventional body-diode conduction. The RJK0226DNS-WS#J5 leverages this feature in DC-DC secondary-side applications.
What gate drive voltage is required for full enhancement of RJK0226DNS-WS#J5?
The RJK0226DNS-WS#J5 is fully enhanced at VGS = 4.5 V, delivering 2.7 mΩ typical RDS(on). It achieves lower on-resistance (2.3 mΩ) at 8 V, but 4.5 V operation is sufficient for most logic-level applications. The gate threshold voltage (VGS(off)) ranges from 1.2 V to 2.5 V, ensuring reliable turn-on with standard 3.3 V or 5 V controllers. This makes the RJK0226DNS-WS#J5 suitable for low-voltage portable power designs.
What is the package type and pin configuration of RJK0226DNS-WS#J5?
The RJK0226DNS-WS#J5 uses the 8-pin HVSON(3333) package - 3.3 mm × 3.3 mm × 0.8 mm with an exposed drain pad. Pins 1–3 are Source, Pin 4 is Gate, and Pins 5–8 are Drain (internally connected to the thermal pad). This configuration supports high-current routing and low-inductance layout. The RJK0226DNS-WS#J5 pinout is explicitly defined in the Outline diagram on page 1 of the R07DS0260EJ0110 datasheet.
How does the RJK0226DNS-WS#J5 perform in avalanche conditions?
The RJK0226DNS-WS#J5 is rated for 14.7 A avalanche current (IAP) and 27 mJ single-pulse avalanche energy (EAR) at Tch = 25 °C with Rg ≥ 50 Ω. These values are measured per the Avalanche Test Circuit on page 5 of the datasheet. While not intended for repetitive avalanche operation, the RJK0226DNS-WS#J5 offers robustness against transient voltage spikes in switching applications such as motor drives and DC-DC converters.
RJK0226DNS-WS#J5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
RJK0226DNS-WS#J5 FAQ
1.How can I place an order for RJK0226DNS-WS#J5 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK0226DNS-WS#J5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK0226DNS-WS#J5 reliable?
The price and inventory of RJK0226DNS-WS#J5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0226DNS-WS#J5 is usually 5 days.
3.What payment methods are accepted for RJK0226DNS-WS#J5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK0226DNS-WS#J5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK0226DNS-WS#J5?
RJK0226DNS-WS#J5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK0226DNS-WS#J5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK0226DNS-WS#J5?
For technical support, including RJK0226DNS-WS#J5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0226DNS-WS#J5 requirements.
6.How does Aetrix verify that RJK0226DNS-WS#J5 is sourced from the original manufacturer or authorized distributors?
All RJK0226DNS-WS#J5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0226DNS-WS#J5 meets industry standards.
7.What is the process for return or replacement of RJK0226DNS-WS#J5?
All RJK0226DNS-WS#J5 units undergo pre-shipment inspection (PSI). If there is an issue with RJK0226DNS-WS#J5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK0226DNS-WS#J5 part is unused and in its original packaging.
Return procedure for RJK0226DNS-WS#J5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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