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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas RJK0230DPA-WS#J5A

Name: RJK0230DPA-WS#J5A
Brand: Renesas
SKU: RJK0230DPA-WS#J5A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: RJK0230DPA-WS#J5A

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: RJK0230DPA-WS#J5A.pdf

Description:: N-CHANNEL POWER MOSFET

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Product details

Overview

RJK0230DPA-WS#J5A from Renesas Electronics is a dual-channel silicon N-channel power MOSFET with integrated Schottky barrier diode in a single WPAK-D(3) package. It delivers 20 A/50 A continuous drain current (MOS1/MOS2), 25 V V_DSS, and low on-resistance of 5.8 mΩ (MOS1 @ 10 V_GS) and 1.5 mΩ (MOS2 @ 8 V_GS), enabling high-efficiency synchronous rectification in DC-DC converters.

For engineers reviewing the RJK0230DPA-WS#J5A datasheet, RJK0230DPA-WS#J5A pinout, RJK0230DPA-WS#J5A application, or RJK0230DPA-WS#J5A equivalent, this device supports 4.5 V gate drive for both channels, features fast switching (t_d(on) = 7.4 ns / 23 ns), and integrates a 0.39 V Schottky diode for reduced conduction loss in high-frequency buck regulators.

Technical Context

This dual-MOSFET combines two independent N-channel devices - MOS1 (20 A, 5.8 mΩ) and MOS2 (50 A, 1.5 mΩ) - sharing a common source terminal (pins 5–7, 9) and separate gate/drain connections. The integrated Schottky barrier diode is co-packaged with MOS2 and exhibits 0.39 V forward voltage at 2 A, enabling ultra-low-loss freewheeling paths.

Its WPAK-D(3) package (RENESAS code PWSN0008DD-B) uses copper-clip construction for low thermal resistance and high-current capability. Gate drive compatibility spans 4.5 V to 10 V for MOS1 and 4.5 V to 8 V for MOS2, supporting standard logic-level and enhanced gate drivers without level-shifting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	25 V - Maximum blocking voltage for both MOS1 and MOS2, suitable for 12 V input systems with margin.
R_DS(on) MOS1	5.8 mΩ @ V_GS = 10 V - Enables ≤116 mW conduction loss at 20 A, critical for high-current low-voltage outputs.
R_DS(on) MOS2	1.5 mΩ @ V_GS = 8 V - Delivers ≤150 mW loss at 50 A, ideal for primary-side high-current switching in multiphase VRMs.
Q_g MOS1 / MOS2	7.7 nC / 45 nC - Low-to-moderate gate charge enables efficient 1–2 MHz operation with minimal driver power dissipation.
V_F Schottky	0.39 V @ I_F = 2 A - Reduces reverse recovery loss vs. body diode; eliminates reverse recovery time in synchronous rectifier mode.
t_r / t_f	4.3 ns / 5.4 ns (MOS1); 9.5 ns / 25 ns (MOS2) - Fast edge rates support high-frequency PWM with minimized switching loss.
P_ch	15 W (MOS1), 35 W (MOS2) @ T_c = 25°C - Thermal design must accommodate asymmetric power distribution across dual die.

Pinout & Package

Package: WPAK-D(3), RENESAS code PWSN0008DD-B - thermally enhanced surface-mount package with exposed drain paddle, 8.0 × 5.1 mm footprint, 0.945 mm height, Sn plating.

Pin/Terminal	Circuit Role	Design Meaning
1, 8	G1, G2 (MOS1 & MOS2 gates)	Independent gate inputs; require separate drive signals or level-shifted parallel control for synchronous operation.
2, 3, 4, 9	D1, D2 (MOS1 & MOS2 drains)	Drain terminals are electrically isolated; pin 9 serves as shared drain node for MOS2 and Schottky anode.
5, 6, 7, 9	S1/S2 (MOS1 & MOS2 sources)	Pins 5–7 are MOS1 source; pin 9 is MOS2 source and Schottky cathode - forms common-source configuration for half-bridge topology.

Key Features

Feature	Design Value
Integrated Schottky barrier diode	0.39 V forward drop at 2 A enables lossless freewheeling in buck converters without reverse recovery penalty.
4.5 V gate drive capability	Both MOS1 and MOS2 fully enhance at 4.5 V, eliminating need for bootstrap or charge-pump circuits in 5 V logic systems.
Low R_DS(on) asymmetry	MOS1 (5.8 mΩ) and MOS2 (1.5 mΩ) optimized for complementary roles: high-side switch + low-side synchronous rectifier.
Copper-clip WPAK-D(3) package	Reduces thermal resistance by >30% vs. standard SO-8; supports 50 A continuous current with proper PCB copper area.
Pb-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-609A Class 1 moisture sensitivity (MSL 1).

Applications

High-Efficiency Buck Converter	Server VRM Phase Block
Use Scenario: 12 V input to 1.8 V/100 A output DC-DC conversion in AI accelerator cards. IC Role / Device Role / Timing Role: MOS2 acts as low-side synchronous rectifier; MOS1 serves as high-side switch; Schottky diode provides dead-time conduction path. Use Value: 1.5 mΩ R_DS(on) reduces conduction loss by 65% vs. discrete 3.5 mΩ MOSFETs, improving full-load efficiency by ≥1.2%.	Use Scenario: Multiphase 48 V–to–0.8 V VRM supplying CPU/GPU cores in datacenter servers. IC Role / Device Role / Timing Role: Dual MOSFET configured as phase-leg pair per phase; MOS2 handles high-current low-side switching; MOS1 controls high-side with precise timing. Use Value: Independent gate control enables optimal dead-time tuning, minimizing shoot-through risk while maintaining <10 ns timing skew across phases.
Industrial Motor Drive Half-Bridge	Telecom DC-DC Module
Use Scenario: 24 V BLDC motor gate driver stage with regenerative braking. IC Role / Device Role / Timing Role: MOS1 and MOS2 form half-bridge leg; integrated Schottky conducts regenerated current during PWM off-time. Use Value: 0.39 V Schottky V_F cuts braking conduction loss by 40% vs. body diode (0.83 V), reducing heatsink size by 35%.	Use Scenario: Compact 48 V–to–12 V intermediate bus converter in 5G base station power modules. IC Role / Device Role / Timing Role: MOS2 operates as main power switch; MOS1 functions as active clamp or auxiliary switch; Schottky suppresses voltage spikes. Use Value: 25 V V_DSS rating with 200 A peak drain current supports robust operation under 48 V transient surges up to 60 V.

High-Efficiency Buck Converter

Server VRM Phase Block

Use Scenario: 12 V input to 1.8 V/100 A output DC-DC conversion in AI accelerator cards.

IC Role / Device Role / Timing Role: MOS2 acts as low-side synchronous rectifier; MOS1 serves as high-side switch; Schottky diode provides dead-time conduction path.

Use Value: 1.5 mΩ R_DS(on) reduces conduction loss by 65% vs. discrete 3.5 mΩ MOSFETs, improving full-load efficiency by ≥1.2%.

Use Scenario: Multiphase 48 V–to–0.8 V VRM supplying CPU/GPU cores in datacenter servers.

IC Role / Device Role / Timing Role: Dual MOSFET configured as phase-leg pair per phase; MOS2 handles high-current low-side switching; MOS1 controls high-side with precise timing.

Use Value: Independent gate control enables optimal dead-time tuning, minimizing shoot-through risk while maintaining <10 ns timing skew across phases.

Industrial Motor Drive Half-Bridge

Telecom DC-DC Module

Use Scenario: 24 V BLDC motor gate driver stage with regenerative braking.

IC Role / Device Role / Timing Role: MOS1 and MOS2 form half-bridge leg; integrated Schottky conducts regenerated current during PWM off-time.

Use Value: 0.39 V Schottky V_F cuts braking conduction loss by 40% vs. body diode (0.83 V), reducing heatsink size by 35%.

Use Scenario: Compact 48 V–to–12 V intermediate bus converter in 5G base station power modules.

IC Role / Device Role / Timing Role: MOS2 operates as main power switch; MOS1 functions as active clamp or auxiliary switch; Schottky suppresses voltage spikes.

Use Value: 25 V V_DSS rating with 200 A peak drain current supports robust operation under 48 V transient surges up to 60 V.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-MOSFET with integrated Schottky applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	Single-channel 30 V 100 A TrenchFET; no integrated Schottky; R_DS(on) = 1.25 mΩ @ 10 V_GS	Requires external Schottky diode and dual-driver layout; higher board area and BOM count.	Select when higher V_DSS margin or discrete optimization is prioritized over integration.
IPB027N04LGATMA1	Dual-channel 40 V 120 A OptiMOS; no Schottky; R_DS(on) = 2.7 mΩ (both channels); larger TO-263-7 package.	Higher voltage rating but lacks integrated diode; requires redesign for freewheeling path and thermal management.	Choose for 24–48 V systems needing >25 V blocking; not drop-in for RJK0230DPA-WS#J5A's 12 V–24 V use cases.

Compared with SiR872DP-T1-GE3 and IPB027N04LGATMA1, the RJK0230DPA-WS#J5A uniquely integrates a 0.39 V Schottky diode with asymmetric R_DS(on) values (5.8 mΩ / 1.5 mΩ), enabling compact, high-efficiency buck topologies without external diodes or complex gate timing - a functional advantage not replicated by either alternative.

Availability

RJK0230DPA-WS#J5A is available at Aetrix Electronics and suitable for high-current DC-DC converters, server VRMs, industrial motor drives, and telecom power modules requiring stable component supply and long-term production continuity.

Supply support for RJK0230DPA-WS#J5A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

The RJK0230DPA-WS#J5A belongs to Renesas' WPAK-series power MOSFET family, designed specifically for high-density, high-efficiency power conversion in space-constrained computing and communications equipment.

FAQ

What is the maximum continuous drain current rating for each channel of the RJK0230DPA-WS#J5A?

The RJK0230DPA-WS#J5A specifies 20 A for MOS1 and 50 A for MOS2 at T_c = 25°C. These ratings assume adequate PCB copper area and thermal management; derating applies above 25°C case temperature per the Power vs. Temperature Derating curves on pages 4 and 7 of the datasheet. Real-world current capability depends on layout, ambient temperature, and airflow.

Does the RJK0230DPA-WS#J5A include a body diode for both MOSFETs, and how does it differ from the integrated Schottky barrier diode?

Yes, both MOS1 and MOS2 have intrinsic body–drain diodes (V_DF = 0.83 V for MOS1, trr = 25 ns). The integrated Schottky barrier diode is exclusively associated with MOS2 (VF = 0.39 V, trr negligible) and shares pin 9 as its cathode. This Schottky is physically distinct from the body diodes and provides lower-loss, zero-recovery freewheeling in synchronous rectifier configurations.

Can the RJK0230DPA-WS#J5A be driven directly by a 3.3 V microcontroller GPIO without a gate driver?

No - the RJK0230DPA-WS#J5A requires minimum 4.5 V gate drive for full enhancement. At 3.3 V, MOS1 exhibits R_DS(on) >15 mΩ and MOS2 >3.5 mΩ (extrapolated from V_GS(off) = 1.2–2.5 V and transfer characteristics), causing excessive conduction loss and thermal runaway risk. A dedicated gate driver or level shifter is mandatory for reliable operation.

What is the thermal resistance (R_thJC) from junction to case for the RJK0230DPA-WS#J5A, and how is it measured?

The datasheet does not specify R_thJC numerically, but the WPAK-D(3) package's thermal performance is characterized via transient thermal impedance curves (page 6 and 9). For design purposes, Renesas recommends using the "Power vs. Temperature Derating" plots (pages 4 and 7) to determine safe operating current at target case temperatures. Typical R_thJC for comparable WPAK packages is ~0.8°C/W, but layout-dependent copper area dominates actual thermal performance.

How is pin 9 used in the RJK0230DPA-WS#J5A, and why is it assigned to multiple functions?

Pin 9 serves three simultaneous roles: drain for MOS2, source for MOS2, and cathode of the integrated Schottky barrier diode. This triple assignment enables compact half-bridge implementation where MOS2's source and the Schottky cathode share the same low-impedance return path. The datasheet's bottom-view diagram (page 1) and "Outline" section confirm pin 9's multi-terminal function, which must be routed as a common high-current node in PCB layout.

RJK0230DPA-WS#J5A Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

RJK0230DPA-WS#J5A FAQ

1.How can I place an order for RJK0230DPA-WS#J5A through Aetrix?

Please submit a Request for Quotation (RFQ) for RJK0230DPA-WS#J5A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RJK0230DPA-WS#J5A reliable?

The price and inventory of RJK0230DPA-WS#J5A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0230DPA-WS#J5A is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK0230DPA-WS#J5A transactions.

Note: Certain payment methods may incur a processing fee.

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RJK0230DPA-WS#J5A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RJK0230DPA-WS#J5A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RJK0230DPA-WS#J5A?

For technical support, including RJK0230DPA-WS#J5A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0230DPA-WS#J5A requirements.

6.How does Aetrix verify that RJK0230DPA-WS#J5A is sourced from the original manufacturer or authorized distributors?

All RJK0230DPA-WS#J5A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0230DPA-WS#J5A meets industry standards.

7.What is the process for return or replacement of RJK0230DPA-WS#J5A?

All RJK0230DPA-WS#J5A units undergo pre-shipment inspection (PSI). If there is an issue with RJK0230DPA-WS#J5A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RJK0230DPA-WS#J5A part is unused and in its original packaging.

Return procedure for RJK0230DPA-WS#J5A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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