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Renesas RJK0301DPB-00#J0
- Part No.:
- RJK0301DPB-00#J0
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- SC-100, SOT-669
- Datasheet:
-
RJK0301DPB-00#J0.pdf
- Description:
- MOSFET N-CH 30V 60A LFPAK
- Quantity:
- Payment:
- Shipping:
Inventory:19,786
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Product details
Overview
RJK0301DPB-00#J0 from Renesas Electronics is a silicon N-channel power MOSFET designed for high-efficiency DC-DC conversion and load switching in industrial power supplies and motor drivers. It delivers 60 A continuous drain current at Tc = 25°C, features 2.3 mΩ typical RDS(on) at VGS = 10 V, supports 4.5 V gate drive, and uses LFPAK (PTZZ0005DA-A) surface-mount packaging for high-density PCB layouts.
For engineers reviewing the RJK0301DPB-00#J0 datasheet, RJK0301DPB-00#J0 pinout, RJK0301DPB-00#J0 application, or RJK0301DPB-00#J0 equivalent, key selection criteria include low on-resistance at 4.5 V gate drive, avalanche energy rating of 90 mJ, thermal resistance of 1.93°C/W, and body-diode forward voltage of 0.84 V at 60 A - all critical for synchronous rectification and high-current switching designs.
Technical Context
This MOSFET employs a trench-gate process optimized for low RDS(on) and fast switching, with Qg = 32 nC and Qgd = 7.0 nC enabling efficient operation in 100–500 kHz DC-DC converters. Its 30 V VDSS rating and ±12 V/16 V VGSS range support robust gate control in 3.3 V and 5 V logic-driven systems.
The integrated body diode exhibits trr = 50 ns and VDF = 0.84 V at 60 A, making it suitable for freewheeling paths where reverse recovery performance impacts efficiency and EMI. Thermal design is anchored by θch–C = 1.93°C/W and Pch = 65 W at Tc = 25°C, enabling high-power density thermal management on standard FR-4 PCBs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage for 12 V and 24 V bus applications |
| RDS(on) typ. | 2.3 mΩ at VGS = 10 V - Enables <100 mW conduction loss at 30 A |
| RDS(on) max. | 4.0 mΩ at VGS = 4.5 V - Ensures reliable turn-on with standard logic-level drivers |
| ID | 60 A continuous - Supports high-current load switching without external heatsinking at moderate duty cycles |
| EAR | 90 mJ - Withstands single-pulse inductive energy in motor drive and converter fault conditions |
| tr/tf | 4.5 ns / 6.0 ns - Minimizes switching losses in high-frequency SMPS designs |
| VGS(off) | 1.2–2.5 V - Provides clear threshold margin against false turn-on in noisy environments |
| Ciss | 5000 pF - Determines gate drive strength requirement for 100+ kHz operation |
Pinout & Package
Package: LFPAK (RENESAS code PTZZ0005DA-A), SC-100 compliant, 5-pin surface-mount with exposed drain pad for thermal and electrical performance. Dimensions: 4.9 × 3.95 × 1.3 mm (L × W × H), mass 0.080 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 (S) | Source | Common source connection for internal parallel cells; low-inductance multi-pin layout reduces source inductance in high-dI/dt switching |
| 4 (G) | Gate | Single-point gate input; requires <4.7 Ω series resistance to damp ringing per switching test circuit |
| 5 (D) | Drain | Exposed copper pad - must be soldered to large PCB copper area for thermal conduction and low-impedance power return path |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive compatibility | Guaranteed RDS(on) ≤ 4.0 mΩ at VGS = 4.5 V - eliminates need for gate boosters in 5 V microcontroller-based systems |
| Low gate charge | Qg = 32 nC - reduces driver power dissipation and enables use of compact SOT-23 gate drivers |
| High-current body diode | IDR = 60 A with VDF = 0.84 V - supports bidirectional current in half-bridge freewheeling without external Schottky |
| Avalanche-rated operation | IAP = 30 A, EAR = 90 mJ - allows safe clamping of inductive kickback in motor control without snubbers |
| Thermal performance | θch–C = 1.93°C/W - achieves <100°C channel rise at 65 W dissipation with 25°C case temperature |
Applications
| Server VRM Output Stage | Industrial DC-DC Converter |
|---|---|
Use Scenario: High-current, high-efficiency synchronous rectification in 12 V input → 1.2 V/150 A output server voltage regulator modules. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, switched at 300–600 kHz with precise dead-time control. Use Value: 2.3 mΩ RDS(on) minimizes conduction loss; 4.5 V gate compatibility aligns with standard PWM controller outputs; low Qgd ensures clean turn-off during high dV/dt transitions. | Use Scenario: Primary-side high-side switch and secondary-side synchronous rectifier in isolated 48 V → 12 V telecom DC-DC bricks. IC Role / Device Role / Timing Role: Power switch in active clamp forward or LLC resonant topology, operating up to 350 kHz. Use Value: 30 V VDSS provides sufficient margin over 12 V rail; 90 mJ avalanche rating handles leakage inductance spikes; LFPAK package enables compact, thermally robust layout. |
| Brushless DC Motor Driver | Hot-Swap Controller |
Use Scenario: Half-bridge leg in 24 V BLDC motor drives for HVAC blowers and industrial fans, delivering up to 40 A phase current. IC Role / Device Role / Timing Role: Low-side switching element in three-phase inverter, commutated via 3-phase gate driver IC. Use Value: Fast 4.5 ns rise time and 6.0 ns fall time reduce switching losses; body diode trr = 50 ns limits shoot-through risk during PWM transitions. | Use Scenario: Inrush current limiting and fault protection in 12 V/48 V backplane hot-swap modules for network equipment. IC Role / Device Role / Timing Role: Main pass transistor controlled by dedicated hot-swap controller IC with current sensing and foldback. Use Value: 60 A ID rating supports >30 A sustained load; low RDS(on) keeps power dissipation under 1 W at full load; robust VGSS rating withstands transient gate stress during fault events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL3803PbF | RDS(on) = 3.0 mΩ @ 10 V; TO-220 package; higher θJA (62°C/W vs. LFPAK's ~45°C/W) | Requires heatsink for >25 A continuous; less suitable for ultra-thin or high-density boards | Choose when legacy TO-220 footprint or higher single-pulse avalanche capability (120 mJ) is prioritized over board space |
| SiR872DP-T1-GE3 | RDS(on) = 2.1 mΩ @ 10 V; same LFPAK56 package; Qg = 38 nC (higher than RJK0301DPB-00#J0's 32 nC) | Slightly higher gate drive loss; identical thermal and mounting interface | Prefer when lowest possible RDS(on) is critical and marginal increase in Qg is acceptable for system efficiency trade-off |
Compared with IRL3803PbF and SiR872DP-T1-GE3, RJK0301DPB-00#J0 offers optimal balance of low gate charge (32 nC), industry-leading thermal resistance (1.93°C/W), and 4.5 V logic-level drive - making it especially effective in space-constrained, high-frequency, high-current applications where driver loss and thermal headroom are limiting factors.
Availability
RJK0301DPB-00#J0 is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, telecom DC-DC converters, and hot-swap controllers requiring stable component supply and long-term production continuity.
Supply support for RJK0301DPB-00#J0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The RJK0301DPB-00#J0 belongs to Renesas' high-current logic-level power MOSFET product line, engineered specifically for high-efficiency, high-density power conversion in next-generation computing and industrial power systems.
FAQ
What is the maximum continuous drain current rating for RJK0301DPB-00#J0?
RJK0301DPB-00#J0 is rated for 60 A continuous drain current at case temperature Tc = 25°C. Derating applies above this temperature - for example, at Tc = 75°C, the usable ID drops to approximately 40 A based on the power vs. temperature derating curve in the datasheet. This rating assumes proper PCB copper area for thermal conduction from the exposed drain pad.
Does RJK0301DPB-00#J0 support 3.3 V gate drive?
RJK0301DPB-00#J0 is not guaranteed to fully enhance with 3.3 V gate drive. Its VGS(off) range is 1.2–2.5 V, and RDS(on) is specified only down to 4.5 V (max 4.0 mΩ). At 3.3 V, RDS(on) increases significantly - typically >10 mΩ - resulting in excessive conduction loss. Use with 3.3 V logic requires verification of system-level thermal and efficiency margins, or addition of a gate driver.
What is the avalanche energy rating of RJK0301DPB-00#J0 and how is it tested?
RJK0301DPB-00#J0 has a repetitive avalanche energy rating EAR of 90 mJ, measured at Tch = 25°C with Rg ≥ 50 Ω and IAP = 30 A. The test uses a standardized unclamped inductive switching (UIS) circuit with VDD = 15 V and L selected to achieve the specified current. This rating validates ruggedness against inductive transients in motor and converter applications.
Can RJK0301DPB-00#J0 be used as a synchronous rectifier in a 48 V to 12 V LLC converter?
Yes, RJK0301DPB-00#J0 is suitable as a synchronous rectifier in a 48 V to 12 V LLC converter. Its 30 V VDSS provides adequate margin over the 12 V output rail, and its low RDS(on) (2.3 mΩ typ.) minimizes conduction loss. The fast switching times (tr = 4.5 ns, tf = 6.0 ns) and low Qgd (7.0 nC) help maintain efficiency at typical LLC operating frequencies (200–500 kHz).
What is the thermal resistance from channel to case (θch–C) for RJK0301DPB-00#J0, and how does it impact PCB layout?
RJK0301DPB-00#J0 has a channel-to-case thermal resistance θch–C of 1.93°C/W. This value assumes direct thermal conduction from the exposed drain pad (Pin 5) to a large, low-thermal-resistance copper plane on the PCB. Layout best practices include using ≥ 4 thermal vias (0.3 mm diameter) under the pad, connecting to inner-layer ground/power planes, and avoiding solder mask over the pad to maximize heat transfer.
RJK0301DPB-00#J0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- SC-100, SOT-669
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 2.8mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 32 nC @ 4.5 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 5000 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 65W (Tc)
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK
RJK0301DPB-00#J0 FAQ
1.How can I place an order for RJK0301DPB-00#J0 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK0301DPB-00#J0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK0301DPB-00#J0 reliable?
The price and inventory of RJK0301DPB-00#J0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0301DPB-00#J0 is usually 5 days.
3.What payment methods are accepted for RJK0301DPB-00#J0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK0301DPB-00#J0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK0301DPB-00#J0?
RJK0301DPB-00#J0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK0301DPB-00#J0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK0301DPB-00#J0?
For technical support, including RJK0301DPB-00#J0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0301DPB-00#J0 requirements.
6.How does Aetrix verify that RJK0301DPB-00#J0 is sourced from the original manufacturer or authorized distributors?
All RJK0301DPB-00#J0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0301DPB-00#J0 meets industry standards.
7.What is the process for return or replacement of RJK0301DPB-00#J0?
All RJK0301DPB-00#J0 units undergo pre-shipment inspection (PSI). If there is an issue with RJK0301DPB-00#J0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK0301DPB-00#J0 part is unused and in its original packaging.
Return procedure for RJK0301DPB-00#J0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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