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Renesas RJK0301DPB-02#J0
- Part No.:
- RJK0301DPB-02#J0
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- SC-100, SOT-669
- Datasheet:
-
RJK0301DPB-02#J0.pdf
- Description:
- MOSFET N-CH 30V 60A 5LFPAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,403
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Product details
Overview
RJK0301DPB-02#J0 from Renesas Electronics is a silicon N-channel power MOSFET designed for high-efficiency DC-DC conversion and motor drive switching in automotive and industrial power stages. It delivers 30 V VDSS, 60 A continuous drain current, and 2.3 mΩ typical RDS(on) at VGS = 10 V, enabling low conduction loss in compact 48 V battery-fed systems.
For engineers reviewing the RJK0301DPB-02#J0 datasheet, RJK0301DPB-02#J0 pinout, RJK0301DPB-02#J0 application, or RJK0301DPB-02#J0 equivalent, this device supports 4.5 V gate drive compatibility, fast switching (td(on) = 11.5 ns), and robust avalanche energy rating (90 mJ), making it suitable for synchronous buck converters, BLDC gate drivers, and load switch designs requiring high-density mounting and thermal reliability.
Technical Context
This MOSFET employs planar trench-gate silicon technology optimized for low RDS(on) × Qg figure-of-merit (2.3 mΩ × 32 nC), supporting high-frequency PWM operation up to 1 MHz in hard-switched topologies. Its LFPAK (SC-100) package provides 1.93 °C/W channel-to-case thermal resistance and integrates three parallel source terminals for reduced parasitic inductance.
The device features a body diode with 50 ns reverse recovery time (trr) and 0.84 V forward voltage (VDF) at 60 A, enabling efficient freewheeling in synchronous rectification. Gate threshold voltage (VGS(off)) is specified between 1.2 V and 2.5 V, ensuring stable turn-on under noisy 5 V control rail conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage for 48 V nominal bus applications with 20 % safety margin |
| ID | 60 A - Continuous drain current at Tc = 25 °C, derates to 30 A at Tc = 75 °C |
| RDS(on) max | 2.8 mΩ - Ensures ≤ 10.1 W conduction loss at 60 A, critical for thermal management in sealed enclosures |
| Qg | 32 nC - Enables fast switching with moderate gate driver strength (e.g., TC4427 or similar) |
| tr/tf | 4.5 ns / 6.0 ns - Supports >500 kHz switching frequencies while limiting EMI generation |
| θch–c | 1.93 °C/W - Allows direct heatsinking to PCB copper or external metal core without thermal interface material |
| EAR | 90 mJ - Withstands single-pulse inductive energy spikes in motor phase-leg short-circuit events |
Pinout & Package
Package: LFPAK (SC-100), Renesas code PTZZ0005DA-A - surface-mount, exposed-drain copper-clip package with 0.080 g mass and 6.1 mm × 4.9 mm footprint. Optimized for high-current routing and low-inductance layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Three parallel SMT pads for low-impedance return path; connects directly to power ground plane |
| 4 | Gate | Single control input; requires <1 μA leakage current drive; compatible with 3.3 V/5 V logic |
| 5 | Drain | Exposed copper pad on bottom side - primary current path and thermal conduction path to PCB |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) × Qg | 73.6 mΩ·nC - balances conduction and switching losses for optimal efficiency in 300–1000 kHz DC-DC converters |
| 4.5 V gate drive capability | 3.0 mΩ RDS(on) at VGS = 4.5 V - enables direct drive from microcontroller GPIOs without level-shifting |
| Fast body diode recovery | trr = 50 ns - reduces shoot-through risk and reverse recovery loss in synchronous rectifiers |
| Pb-free & halogen-free construction | Complies with JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) - supports lead-free reflow without popcorn effect |
| High avalanche ruggedness | IAP = 30 A, EAR = 90 mJ - sustains repetitive inductive switching stress without parameter drift |
Applications
| Automotive Body Control Module (BCM) | Industrial 48 V DC-DC Converter |
|---|---|
Use Scenario: High-side load switching for LED headlamps and HVAC actuators in 12 V/48 V dual-battery architectures. IC Role / Device Role / Timing Role: Power switch controlling up to 60 A resistive/inductive loads with PWM dimming support. Use Value: 2.3 mΩ RDS(on) limits self-heating to <15 °C rise at full load, eliminating need for active cooling in confined BCM housings. |
Use Scenario: Primary-side synchronous rectifier in isolated 48 V → 12 V flyback or active-clamp forward converter. IC Role / Device Role / Timing Role: Low-side switch operating at 300–500 kHz with precise dead-time control. Use Value: 32 nC Qg allows gate drive with <1 W dissipation using discrete FET driver, reducing BOM cost vs. integrated controllers. |
| BLDC Motor Gate Driver Stage | Server PSU OR-ing Diode Replacement |
Use Scenario: Half-bridge low-side switch in 3-phase 24–48 V brushless DC motor drives for fans and pumps. IC Role / Device Role / Timing Role: Fast-switching power stage handling 60 A peak phase current with 50 ns trr body diode. Use Value: 4.5 ns rise time minimizes overlap loss during commutation, improving motor efficiency by ≥1.2 % at full load. |
Use Scenario: Active OR-ing FET replacing Schottky diodes in redundant 48 V server power supply outputs. IC Role / Device Role / Timing Role: Reverse-polarity protected, low-loss current path with bidirectional conduction capability. Use Value: 0.84 V VDF and 2.3 mΩ RDS(on) reduce forward drop by 65 % vs. 40 V Schottky, cutting heat sink size by 40 %. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL3803PBF | RDS(on) = 3.0 mΩ @ 10 V; Qg = 42 nC; TO-220AB package; θJA = 62 °C/W | Larger thermal resistance and higher gate charge increase switching loss and require heatsink | Prefer RJK0301DPB-02#J0 for space-constrained, high-frequency designs where board area and thermal performance are critical |
| DMT6009LPS-13 | RDS(on) = 2.7 mΩ @ 10 V; Qg = 28 nC; PowerDI 5060 package; θch–c = 2.5 °C/W | Slightly higher RDS(on) and lower thermal conductivity limit continuous current to 52 A at same case temperature | Choose RJK0301DPB-02#J0 when 60 A continuous rating and 1.93 °C/W thermal path are required for sustained high-power operation |
Compared with IRL3803PBF and DMT6009LPS-13, the RJK0301DPB-02#J0 offers superior thermal performance (1.93 °C/W), lower RDS(on), and faster switching-enabling smaller PCB footprints, reduced heatsink requirements, and higher efficiency in 48 V power stages where thermal density and frequency scalability are design constraints.
Availability
RJK0301DPB-02#J0 is available at Aetrix Electronics and suitable for automotive body electronics, industrial 48 V DC-DC converters, BLDC motor drives, and server OR-ing applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for RJK0301DPB-02#J0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.
The RJK0301DPB-02#J0 belongs to Renesas' LFPAK power MOSFET product line, engineered for high-current, high-efficiency switching in space-constrained automotive and industrial power systems where thermal performance and gate-drive simplicity are critical.
FAQ
What is the maximum continuous drain current rating for RJK0301DPB-02#J0 at 75°C case temperature?
The RJK0301DPB-02#J0 supports 30 A continuous drain current at Tc = 75 °C, as shown in the "Power vs. Temperature Derating" graph on page 3 of the datasheet. This reflects linear derating from 60 A at 25 °C using the specified channel-to-case thermal resistance of 1.93 °C/W and maximum channel temperature of 150 °C.
Does RJK0301DPB-02#J0 support gate drive from a standard 3.3 V microcontroller GPIO?
No-RJK0301DPB-02#J0 requires minimum 4.5 V gate drive for guaranteed low RDS(on) (3.0 mΩ typ.), and its gate threshold voltage range is 1.2–2.5 V. While it may partially turn on at 3.3 V, RDS(on) rises significantly beyond specification; use with 3.3 V logic requires an external level shifter or gate driver such as the TC4427.
What is the avalanche energy rating of RJK0301DPB-02#J0 and under what test conditions is it specified?
The RJK0301DPB-02#J0 has a repetitive avalanche energy rating (EAR) of 90 mJ, measured at Tch = 25 °C with Rg ≥ 50 Ω and IAP = 30 A, per Note 2 in the Absolute Maximum Ratings table. This rating applies to single-pulse inductive switching events and supports robustness in motor drive and relay-driving applications.
Can RJK0301DPB-02#J0 be used in parallel configurations, and what layout considerations apply?
Yes-RJK0301DPB-02#J0 supports paralleling due to its positive temperature coefficient of RDS(on). To ensure current sharing, use symmetrical PCB traces with matched gate loop inductance, individual gate resistors (≥4.7 Ω), and common-source Kelvin connections. The three-source-terminal configuration simplifies low-inductance source routing.
Is RJK0301DPB-02#J0 compliant with automotive AEC-Q101 qualification standards?
No-the RJK0301DPB-02#J0 is classified as a "Standard" grade Renesas product per Notice #5 in the datasheet and is intended for industrial, computing, and consumer applications-not automotive safety-critical systems. For AEC-Q101 qualified equivalents, consult Renesas' RAJ series or contact their automotive division directly.
RJK0301DPB-02#J0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- SC-100, SOT-669
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.8mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 32 nC @ 4.5 V
- Vgs (Max):
- +16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5000 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 65W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK
RJK0301DPB-02#J0 FAQ
1.How can I place an order for RJK0301DPB-02#J0 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK0301DPB-02#J0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK0301DPB-02#J0 reliable?
The price and inventory of RJK0301DPB-02#J0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0301DPB-02#J0 is usually 5 days.
3.What payment methods are accepted for RJK0301DPB-02#J0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK0301DPB-02#J0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK0301DPB-02#J0?
RJK0301DPB-02#J0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK0301DPB-02#J0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK0301DPB-02#J0?
For technical support, including RJK0301DPB-02#J0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0301DPB-02#J0 requirements.
6.How does Aetrix verify that RJK0301DPB-02#J0 is sourced from the original manufacturer or authorized distributors?
All RJK0301DPB-02#J0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0301DPB-02#J0 meets industry standards.
7.What is the process for return or replacement of RJK0301DPB-02#J0?
All RJK0301DPB-02#J0 units undergo pre-shipment inspection (PSI). If there is an issue with RJK0301DPB-02#J0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK0301DPB-02#J0 part is unused and in its original packaging.
Return procedure for RJK0301DPB-02#J0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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