Renesas RJK0328DPB-00#J0
- Part No.:
- RJK0328DPB-00#J0
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- SC-100, SOT-669
- Datasheet:
-
RJK0328DPB-00#J0.pdf
- Description:
- MOSFET N-CH 30V 60A LFPAK
- Quantity:
- Payment:

- Shipping:

Inventory:11,589
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Product details
Overview
RJK0328DPB-00#J0 from Renesas is a silicon N-channel power MOSFET designed for high-efficiency, high-current switching in DC-DC converters and motor drive half-bridges. It delivers 1.6 mΩ typical RDS(on) at VGS = 10 V, supports 60 A continuous drain current, and operates with 4.5 V gate drive - enabling direct compatibility with standard logic-level controllers in automotive body electronics and industrial power supplies.
For engineers reviewing the RJK0328DPB-00#J0 datasheet, RJK0328DPB-00#J0 pinout, RJK0328DPB-00#J0 application, or RJK0328DPB-00#J0 equivalent, key selection criteria include its LFPAK (PTZZ0005DA-A) package thermal performance, avalanche energy rating of 90 mJ, and low Qg (42 nC) for fast switching with reduced gate driver losses.
Technical Context
This MOSFET employs a trench-gate process optimized for low on-resistance and fast switching dynamics. Its 30 V VDSS rating targets 12 V and 24 V system rails, while the 1.93 °C/W channel-to-case thermal resistance enables high-power operation without forced cooling when mounted on copper-clad PCBs.
The device integrates a robust body diode with 42 ns reverse recovery time and 46 nC Qrr, supporting synchronous rectification and freewheeling in buck converters and H-bridge motor drivers. Gate charge distribution (Qgs = 15 nC, Qgd = 8.8 nC) ensures controlled Miller plateau transition and low EMI during hard switching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - rated for 12 V/24 V automotive and industrial bus systems with margin against transients |
| RDS(on) typ. | 1.6 mΩ at VGS = 10 V - enables ≤1.8 W conduction loss at 30 A, reducing heatsink requirements |
| ID continuous | 60 A at Tc = 25°C - supports high-current load switching in battery-powered equipment |
| Qg | 42 nC - allows efficient driving with low-power gate drivers (e.g., TC4427) at ≥500 kHz |
| EAR | 90 mJ - withstands repetitive inductive switching stress in motor control without derating |
| θch–c | 1.93 °C/W - enables >35 W dissipation with 70°C temperature rise above case, suitable for compact layouts |
| tr/tf | 4.3 ns / 7.3 ns - minimizes switching losses in high-frequency SMPS designs |
Pinout & Package
Package: LFPAK (RENESAS code PTZZ0005DA-A), surface-mount, 5-terminal copper-clip construction with exposed drain pad for enhanced thermal and electrical performance. Dimensions: 5.3 mm × 4.0 mm × 1.3 mm (max), mass 0.080 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source connection for internal parallel die; low-inductance return path for high di/dt loads |
| 4 | Gate | Control terminal requiring ≤0.1 µA leakage; driven directly by 3.3 V/5 V logic with external series resistor |
| 5 | Drain | Main power output terminal; electrically and thermally connected to exposed copper pad on bottom of package |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS = 4.5 V (RDS(on) = 2.1 mΩ typ.), eliminating need for level-shifting circuitry |
| Low gate charge | Qg = 42 nC reduces driver power consumption and improves efficiency in high-frequency switching |
| High-density mounting | LFPAK footprint occupies ~40% less board area than comparable SO-8 MOSFETs while improving thermal transfer |
| Pb-free construction | Meets RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile requirements |
| Robust body diode | VDF = 0.78 V (typ.) at 60 A and trr = 42 ns enable reliable freewheeling without external Schottky |
Applications
| Automotive Body Control Module (BCM) | Industrial DC-DC Converter |
|---|---|
Use Scenario: Driving 12 V solenoids, relays, and LED arrays in vehicle door modules and lighting control units. IC Role / Device Role / Timing Role: High-side or low-side power switch handling up to 60 A peak loads with PWM dimming and diagnostic feedback. Use Value: Low RDS(on) minimizes voltage drop and self-heating during extended duty cycles; 4.5 V gate compatibility simplifies integration with microcontroller GPIOs. | Use Scenario: Synchronous rectifier in 24 V input, 5 V/40 A isolated buck converter for factory automation I/O power. IC Role / Device Role / Timing Role: Secondary-side switch operating at 300–500 kHz with zero-voltage switching assistance. Use Value: 42 ns trr and low Qrr reduce turn-off losses; 1.93 °C/W θch–c maintains junction temperature <125°C under full load without heatsink. |
| Brushed DC Motor Driver | Server VRM High-Side Switch |
Use Scenario: Half-bridge leg in 24 V robotic actuator controlling bidirectional 30 A stall current. IC Role / Device Role / Timing Role: Low-side switch with integrated body diode conducting reverse current during PWM off-time. Use Value: 90 mJ avalanche energy rating protects against inductive kickback during rapid deceleration without snubber networks. | Use Scenario: High-side switch in 12 V input, 1.2 V/150 A multiphase VRM for AI accelerator cards. IC Role / Device Role / Timing Role: Power stage transistor in interleaved phase-leg configuration operating at 800 kHz. Use Value: 1.6 mΩ RDS(on) limits conduction loss to <0.72 W per phase; LFPAK package enables <0.5°C/W total thermal resistance with 2 oz copper and thermal vias. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL3803PBF | RDS(on) = 3.0 mΩ (VGS = 10 V); TO-220 package; higher θJA (62 °C/W) | Requires heatsink for >15 A continuous; unsuitable for ultra-compact layouts | Choose when legacy TO-220 footprint is mandated and thermal budget permits larger solution size |
| DMTH3006LPS-13 | RDS(on) = 1.7 mΩ (VGS = 10 V); PowerSO-8 package; Qg = 48 nC | Slightly higher gate drive loss; same 30 V rating but lower avalanche rating (60 mJ) | Prefer when existing PowerSO-8 layout exists and avalanche stress is minimal |
Compared with IRL3803PBF and DMTH3006LPS-13, the RJK0328DPB-00#J0 delivers superior thermal performance via LFPAK's low θch–c, tighter RDS(on) tolerance, and higher avalanche ruggedness - making it optimal for space-constrained, high-reliability 30 V switching where board area and transient immunity are critical.
Availability
RJK0328DPB-00#J0 is available at Aetrix Electronics and suitable for automotive body electronics, industrial DC-DC converters, and brushed motor drives requiring stable component supply, long-term lifecycle support, and traceable Pb-free sourcing.
Supply support for RJK0328DPB-00#J0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC products for automotive, industrial, infrastructure, and IoT applications.
The RJK0328DPB-00#J0 belongs to Renesas' LFPAK-series logic-level power MOSFETs, engineered specifically for high-current, high-efficiency switching in space-constrained 12 V–24 V systems where thermal density and gate drive simplicity are paramount.
FAQ
What is the maximum continuous drain current rating for RJK0328DPB-00#J0?
The RJK0328DPB-00#J0 is rated for 60 A continuous drain current at case temperature Tc = 25°C. Derating applies above this temperature - for example, at Tc = 100°C, the usable ID drops to approximately 32 A based on the Pch vs. Tc curve in the datasheet. This rating assumes proper PCB copper area and thermal vias to maintain the specified θch–c = 1.93 °C/W.
Does RJK0328DPB-00#J0 support 3.3 V logic-level gate drive?
No - the RJK0328DPB-00#J0 is not fully enhanced at 3.3 V. Its gate threshold voltage VGS(off) ranges from 1.2 V to 2.5 V, and RDS(on) is only guaranteed at VGS ≥ 4.5 V (2.1 mΩ typ.). For reliable switching, a minimum 4.5 V gate drive is required; 3.3 V will result in significantly elevated on-resistance and thermal risk under load.
What is the avalanche energy rating of RJK0328DPB-00#J0 and how is it tested?
The RJK0328DPB-00#J0 has a repetitive avalanche energy rating EAR of 90 mJ, measured at Tch = 25°C with Rg ≥ 50 Ω and IAP = 30 A. The test uses a standardized unclamped inductive switching circuit (per JEDEC JESD24-1), confirming ruggedness against inductive load transients in motor and solenoid applications without external protection.
Can RJK0328DPB-00#J0 be used in parallel configurations?
Yes - the RJK0328DPB-00#J0 exhibits positive temperature coefficient for RDS(on), enabling stable current sharing in parallel operation. However, matched gate resistors (≤1 Ω) and symmetrical PCB layout (equal trace length/impedance to each device) are mandatory. Thermal coupling between devices must also be minimized to avoid localized hot spots that could trigger thermal runaway.
What is the package type and lead finish of RJK0328DPB-00#J0?
The RJK0328DPB-00#J0 uses the LFPAK package (RENESAS code PTZZ0005DA-A), also known as SC-100, with Ni/Pd/Au plating on all terminals. This lead finish ensures excellent solderability, wire-bond compatibility, and corrosion resistance - compliant with IPC-J-STD-020 moisture sensitivity level 1 (MSL-1) and RoHS Directive 2011/65/EU.
RJK0328DPB-00#J0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- SC-100, SOT-669
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 2.1mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 42 nC @ 4.5 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 6380 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK
RJK0328DPB-00#J0 FAQ
1.How can I place an order for RJK0328DPB-00#J0 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK0328DPB-00#J0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK0328DPB-00#J0 reliable?
The price and inventory of RJK0328DPB-00#J0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0328DPB-00#J0 is usually 5 days.
3.What payment methods are accepted for RJK0328DPB-00#J0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK0328DPB-00#J0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK0328DPB-00#J0?
RJK0328DPB-00#J0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK0328DPB-00#J0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK0328DPB-00#J0?
For technical support, including RJK0328DPB-00#J0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0328DPB-00#J0 requirements.
6.How does Aetrix verify that RJK0328DPB-00#J0 is sourced from the original manufacturer or authorized distributors?
All RJK0328DPB-00#J0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0328DPB-00#J0 meets industry standards.
7.What is the process for return or replacement of RJK0328DPB-00#J0?
All RJK0328DPB-00#J0 units undergo pre-shipment inspection (PSI). If there is an issue with RJK0328DPB-00#J0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK0328DPB-00#J0 part is unused and in its original packaging.
Return procedure for RJK0328DPB-00#J0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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