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Renesas RJK0328DPB-01#J0
- Part No.:
- RJK0328DPB-01#J0
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- SC-100, SOT-669
- Datasheet:
-
RJK0328DPB-01#J0.pdf
- Description:
- MOSFET N-CH 30V 60A LFPAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,370
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Product details
Overview
RJK0328DPB-01#J0 from Renesas Electronics is a silicon N-channel power MOSFET designed for high-efficiency, high-current power switching in DC-DC converters and motor drives. It delivers 1.6 mΩ typical RDS(on) at VGS = 10 V, supports 4.5 V gate drive, and handles 60 A continuous drain current with 30 V VDSS, enabling compact, low-loss synchronous rectification in automotive body control modules.
For engineers reviewing the RJK0328DPB-01#J0 datasheet, RJK0328DPB-01#J0 pinout, RJK0328DPB-01#J0 application, or RJK0328DPB-01#J0 equivalent, key selection criteria include its LFPAK (PTZZ0005DA-A) package thermal performance (θch-c = 1.93 °C/W), avalanche energy rating (90 mJ), and gate charge profile (Qg = 42 nC) for optimized switching loss trade-offs in high-frequency SMPS designs.
Technical Context
This MOSFET employs a trench-gate process to achieve low on-resistance and fast switching dynamics. Its 30 V VDSS rating and ±20 V VGSS tolerance support robust operation in 12 V and 24 V automotive systems, while the 2.1 mΩ RDS(on) at 4.5 V gate drive enables direct logic-level control without gate drivers.
The device integrates a low-VF body diode (0.78 V typ. at 60 A), with trr = 42 ns and Qrr = 46 nC, making it suitable for synchronous buck topologies where reverse recovery behavior directly impacts efficiency and EMI.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage compatible with 24 V nominal automotive and industrial bus systems |
| RDS(on) (VGS = 10 V) | 1.6 mΩ typ. - Enables <1 W conduction loss at 60 A, reducing heatsink requirements |
| RDS(on) (VGS = 4.5 V) | 2.1 mΩ typ. - Supports direct microcontroller GPIO drive without level-shifting circuitry |
| Qg | 42 nC - Determines gate driver power demand and switching transition time in hard-switched applications |
| θch-c | 1.93 °C/W - Allows 65 W channel dissipation with ≤125 °C case temperature rise above ambient |
| EAR | 90 mJ - Specifies single-pulse avalanche energy handling capability under inductive load fault conditions |
| tr/tf | 4.3 ns / 7.3 ns - Enables >1 MHz switching frequencies with controlled dV/dt and reduced EMI generation |
Pinout & Package
Package: LFPAK (RENESAS code PTZZ0005DA-A), surface-mount, thermally enhanced leadframe package with exposed drain pad; dimensions 4.9 × 4.0 × 1.1 mm (L × W × H); mass 0.080 g; Ni/Pd/Au plating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source connection for all three internal parallel dies; low-inductance multi-pin layout minimizes source loop inductance in high-di/dt switching |
| 4 | Gate | Single-point gate input; low Rg (0.7 Ω typ.) reduces gate oscillation risk and improves Miller immunity |
| 5 | Drain | Exposed copper drain pad - primary thermal path to PCB; requires soldered thermal land for rated Pch derating |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive compatibility | Guaranteed turn-on at VGS = 4.5 V supports direct interface with 5 V or 3.3 V microcontrollers and PWM controllers |
| Low gate charge | Qg = 42 nC reduces gate driver power loss and enables faster switching transitions than comparable 30 V MOSFETs |
| High-density mounting | LFPAK footprint occupies ~40% less board area than SO-8 while delivering superior thermal resistance (θch-c = 1.93 °C/W vs. ~3.5 °C/W for SO-8) |
| Robust avalanche capability | Rated IAP = 30 A and EAR = 90 mJ allow safe operation during inductive load switching transients without external snubbers |
| Pb-free and halogen-free construction | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) for unlimited floor life |
Applications
| Automotive Body Control Module (BCM) | Industrial DC-DC Synchronous Rectifier |
|---|---|
Use Scenario: High-side load switching for headlight, fog lamp, and HVAC blower control in 12 V vehicle electrical architecture. IC Role / Device Role / Timing Role: Power switch controlling up to 60 A resistive/inductive loads with PWM dimming capability. Use Value: Low RDS(on) minimizes power loss and thermal stress during continuous operation; 4.5 V gate drive eliminates need for dedicated high-side driver ICs. | Use Scenario: Secondary-side synchronous rectification in isolated 48 V–12 V buck converters for server power supplies. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to improve conversion efficiency above 95%. Use Value: 1.6 mΩ RDS(on) cuts conduction loss by >60% versus 40 V Schottky; fast trr (42 ns) and low Qrr (46 nC) reduce reverse recovery losses and EMI. |
| Motor Drive Half-Bridge Leg | USB-C PD Programmable Power Supply |
Use Scenario: Low-side switch in 24 V brushed DC motor H-bridge for power tools and automated machinery. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET in complementary half-bridge configuration with bootstrap gate drive. Use Value: 60 A ID rating and 240 A pulse current support enable high-torque startup; low Qgd/Qgs ratio (8.8/15 nC) improves Miller immunity during high dV/dt commutation. | Use Scenario: Output stage switch in 20 V/5 A USB-C Power Delivery adjustable output converter. IC Role / Device Role / Timing Role: Primary-side high-frequency switching transistor in active-clamp forward or LLC resonant topology. Use Value: 30 V VDSS provides sufficient margin over 20 V max output; 42 nC Qg enables efficient operation at 500 kHz–1 MHz switching frequencies. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL3803PBF | RDS(on) = 3.0 mΩ @ 10 V; TO-220AB package; higher θJA (62 °C/W vs. 45 °C/W for RJK0328DPB-01#J0 in 2 oz Cu) | Requires larger heatsink; unsuitable for ultra-thin or space-constrained layouts | Select when legacy TO-220 footprint is mandated and thermal budget allows higher RDS(on). |
| DMTH3004LSD-13 | RDS(on) = 2.4 mΩ @ 10 V; PowerDI3333 package; lower Qg (32 nC) but no avalanche rating specified | Lacks documented avalanche energy spec; not recommended for inductive switching without external protection | Select for lowest gate drive loss in non-avalanche-critical SMPS; verify system-level fault tolerance. |
Compared with IRL3803PBF and DMTH3004LSD-13, the RJK0328DPB-01#J0 offers superior thermal performance per unit area, guaranteed avalanche ruggedness, and tighter RDS(on) tolerance-making it optimal for automotive-grade, high-reliability, space-constrained power stages where both efficiency and fault robustness are critical.
Availability
RJK0328DPB-01#J0 is available at Aetrix Electronics and suitable for automotive body electronics, industrial DC-DC converters, motor control subsystems, and USB-C PD power supplies requiring stable component supply and long-term production continuity.
Supply support for RJK0328DPB-01#J0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.
The RJK0328DPB-01#J0 belongs to Renesas' LFPAK-based power MOSFET product line, engineered for high-current, high-efficiency switching in space- and thermally constrained automotive and industrial power systems.
FAQ
What is the maximum continuous drain current rating for RJK0328DPB-01#J0?
The RJK0328DPB-01#J0 is rated for 60 A continuous drain current (ID) at Tc = 25 °C. Derating applies above this case temperature per the Power vs. Temperature Derating curve on page 3 of the datasheet; at 75 °C case temperature, the usable ID drops to approximately 40 A to maintain safe channel temperature limits.
Does RJK0328DPB-01#J0 support logic-level gate drive?
Yes, the RJK0328DPB-01#J0 supports logic-level gate drive with guaranteed turn-on at VGS = 4.5 V. Its RDS(on) is specified at 2.1 mΩ typ. under 4.5 V gate bias, enabling direct interface with standard 3.3 V or 5 V microcontroller outputs without external level-shifting circuitry.
What is the thermal resistance from channel to case for RJK0328DPB-01#J0?
The RJK0328DPB-01#J0 has a channel-to-case thermal resistance (θch-c) of 1.93 °C/W, measured under Tc = 25 °C conditions. This value reflects heat transfer from the silicon die to the exposed drain pad, and must be used with PCB copper area and thermal vias to calculate total junction-to-ambient thermal resistance.
Is RJK0328DPB-01#J0 suitable for avalanche-prone circuits like inductive load switching?
Yes, the RJK0328DPB-01#J0 is explicitly rated for repetitive avalanche operation with IAP = 30 A and EAR = 90 mJ at Tch = 25 °C. Its avalanche ruggedness is validated per the test circuit on page 5 of the datasheet, making it appropriate for automotive relay replacement and solenoid driving where unclamped inductive kickback occurs.
What package type does RJK0328DPB-01#J0 use and what are its key mechanical features?
RJK0328DPB-01#J0 uses the LFPAK package (RENESAS code PTZZ0005DA-A), also known as SC-100. Key features include a 4.9 mm × 4.0 mm footprint, 1.1 mm max height, exposed copper drain pad for thermal conduction, and Ni/Pd/Au plating for solderability and corrosion resistance-optimized for high-power density and automated SMT assembly.
RJK0328DPB-01#J0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- SC-100, SOT-669
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.1mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 42 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6380 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 65W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK
RJK0328DPB-01#J0 FAQ
1.How can I place an order for RJK0328DPB-01#J0 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK0328DPB-01#J0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK0328DPB-01#J0 reliable?
The price and inventory of RJK0328DPB-01#J0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0328DPB-01#J0 is usually 5 days.
3.What payment methods are accepted for RJK0328DPB-01#J0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK0328DPB-01#J0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK0328DPB-01#J0?
RJK0328DPB-01#J0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK0328DPB-01#J0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK0328DPB-01#J0?
For technical support, including RJK0328DPB-01#J0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0328DPB-01#J0 requirements.
6.How does Aetrix verify that RJK0328DPB-01#J0 is sourced from the original manufacturer or authorized distributors?
All RJK0328DPB-01#J0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0328DPB-01#J0 meets industry standards.
7.What is the process for return or replacement of RJK0328DPB-01#J0?
All RJK0328DPB-01#J0 units undergo pre-shipment inspection (PSI). If there is an issue with RJK0328DPB-01#J0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK0328DPB-01#J0 part is unused and in its original packaging.
Return procedure for RJK0328DPB-01#J0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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