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Renesas RJK0329DPB-01#J0
- Part No.:
- RJK0329DPB-01#J0
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- SC-100, SOT-669
- Datasheet:
-
RJK0329DPB-01#J0.pdf
- Description:
- MOSFET N-CH 30V 55A LFPAK
- Quantity:
- Payment:
- Shipping:
Inventory:19,257
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Product details
Overview
RJK0329DPB-01#J0 from Renesas is a silicon N-channel power MOSFET designed for high-efficiency, high-current power switching in DC-DC converters and motor drives. It delivers 55 A continuous drain current at Tc = 25°C, features 1.8 mΩ typical RDS(on) at VGS = 10 V, supports 4.5 V gate drive, and uses LFPAK (PTZZ0005DA-A) surface-mount packaging for high-density board layouts.
For engineers reviewing the RJK0329DPB-01#J0 datasheet, RJK0329DPB-01#J0 pinout, RJK0329DPB-01#J0 application, or RJK0329DPB-01#J0 equivalent, key selection criteria include low on-resistance at 4.5 V gate drive, avalanche energy rating of 62.5 mJ, thermal resistance θch–C = 2.08 °C/W, and body-diode reverse recovery time of 40 ns.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching. Its 30 V VDSS rating and ±20 V VGSS tolerance support robust operation in 12 V and 24 V automotive and industrial power rails. The device integrates a co-packaged body diode with 0.78 V forward voltage at 55 A and 42 nC reverse recovery charge.
Designed for synchronous rectification and high-side/low-side switching, it exhibits 35 nC total gate charge and 7.7 ns turn-on delay under 10 V gate drive. Its safe operating area (SOA) is defined up to 10 ms pulse width at 25°C case temperature, with RDS(on) derating linearly above 25°C case temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage in off-state; suitable for 12 V/24 V bus systems with margin |
| RDS(on) @ VGS = 10 V | 1.8 mΩ typ. - Enables ≤150 mW conduction loss at 55 A, reducing heatsink requirements |
| RDS(on) @ VGS = 4.5 V | 2.4 mΩ typ. - Ensures full enhancement with standard logic-level drivers (e.g., microcontroller GPIO) |
| ID (continuous) | 55 A @ Tc = 25°C - Supports high-current loads without external current sharing |
| Qg | 35 nC - Determines gate driver power requirement and switching loss in hard-switched topologies |
| tr/tf | 4.0 ns / 6.8 ns - Enables MHz-range switching in resonant and LLC converters |
| EAR | 62.5 mJ - Specifies single-pulse avalanche energy handling capability for inductive load protection |
Pinout & Package
Package: LFPAK (RENESAS code PTZZ0005DA-A), surface-mount, lead-free, 5-terminal copper-clip construction with exposed drain pad for enhanced thermal performance. Dimensions: 4.9 mm × 3.95 mm × 1.3 mm max.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source connection for internal parallel die; low-inductance return path for high di/dt currents |
| 4 | Gate | Control terminal requiring <0.1 µA leakage; driven by 4.5–10 V logic-compatible signals |
| 5 | Drain | Main power output terminal; electrically connected to exposed copper pad for thermal and electrical conduction |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive compatibility | Full enhancement at VGS = 4.5 V enables direct interface with 3.3 V/5 V microcontrollers and gate drivers |
| Ultra-low RDS(on) | 1.8 mΩ typ. minimizes I²R losses in high-current paths, improving efficiency in battery-powered and thermal-constrained systems |
| Integrated body diode with fast recovery | 40 ns trr and 42 nC Qrr reduce switching losses and ringing in freewheeling and synchronous rectifier applications |
| High avalanche ruggedness | 25 A IAP and 62.5 mJ EAR allow reliable operation under inductive switching stress without external snubbers |
| Thermally optimized LFPAK package | θch–C = 2.08 °C/W enables >60 W channel dissipation at 25°C case temperature with minimal thermal interface resistance |
Applications
| Motor Drive Inverter Stage | DC-DC Synchronous Rectifier |
|---|---|
Use Scenario: Half-bridge or 3-phase inverter driving brushed/BLDC motors in power tools and e-bikes. IC Role / Device Role / Timing Role: Low-side switch handling 55 A peak phase current with sub-10 ns switching transitions. Use Value: 2.4 mΩ RDS(on) at 4.5 V gate drive eliminates need for level-shifting gate drivers, simplifying control circuitry. | Use Scenario: Secondary-side synchronous rectification in isolated 12 V/48 V telecom and server PSUs. IC Role / Device Role / Timing Role: High-frequency rectifier replacing Schottky diodes in 300–1000 kHz LLC converters. Use Value: 40 ns body-diode trr and low Qrr suppress voltage spikes and reduce EMI during reverse recovery. |
| Automotive Body Control Module | Industrial PLC Output Driver |
Use Scenario: Load switching for headlights, HVAC actuators, and solenoids in 12 V vehicle subsystems. IC Role / Device Role / Timing Role: High-side or low-side power switch with integrated overtemperature and avalanche protection. Use Value: 62.5 mJ avalanche energy rating ensures survivability during inductive load disconnection transients per ISO 7637-2. | Use Scenario: Solid-state relay replacement in programmable logic controller digital output modules. IC Role / Device Role / Timing Role: 55 A-rated output stage switching resistive and inductive loads (e.g., contactors, valves). Use Value: 30 V VDSS and 2.08 °C/W thermal resistance support sustained 3 A–10 A loads without forced air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL3803PbF | RDS(on) = 3.3 mΩ @ 4.5 V; higher Qg (51 nC); TO-220AB package | Larger footprint and higher thermal resistance (θJA ≈ 62 °C/W vs. LFPAK's 2.08 °C/W) | Select when legacy through-hole mounting or higher single-pulse avalanche energy (110 mJ) is prioritized over board space and thermal performance. |
| STL220N3LLH6 | RDS(on) = 1.7 mΩ @ 4.5 V; 60 V VDSS; PowerFLAT 5x6 package | Higher voltage rating increases cost and gate charge; same surface-mount form factor but different pinout and thermal pad layout | Select when system requires 60 V blocking capability or ST ecosystem compatibility, accepting minor PCB redesign for thermal pad alignment. |
Compared with IRL3803PbF and STL220N3LLH6, the RJK0329DPB-01#J0 offers the lowest thermal resistance in its class and optimal balance of 4.5 V drive capability, 30 V rating, and compact LFPAK footprint-making it ideal for space-constrained, thermally demanding 12 V/24 V power stages.
Availability
RJK0329DPB-01#J0 is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and automotive body control modules requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.
Supply support for RJK0329DPB-01#J0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and IoT applications.
The RJK0329DPB-01#J0 belongs to Renesas' LFPAK-series logic-level power MOSFET product line, engineered specifically for high-current, low-voltage switching in space- and thermally constrained power conversion systems.
FAQ
What is the maximum continuous drain current rating for the RJK0329DPB-01#J0?
The RJK0329DPB-01#J0 is rated for 55 A continuous drain current at case temperature Tc = 25°C. This rating decreases with rising case temperature per the derating curve on page 3 of the datasheet, reaching approximately 30 A at Tc = 100°C. The device also supports 220 A pulsed drain current for PW ≤ 10 µs and duty cycle ≤ 1%.
Does the RJK0329DPB-01#J0 support 3.3 V logic-level gate drive?
The RJK0329DPB-01#J0 is specified for full enhancement at VGS = 4.5 V, with RDS(on) = 2.4 mΩ typ. at that voltage. At 3.3 V, the device operates in the linear region with significantly higher on-resistance-datasheet data does not characterize performance below 4.5 V, so 3.3 V drive is not recommended for efficient switching in the RJK0329DPB-01#J0.
What is the thermal resistance from channel to case (θch–C) for the RJK0329DPB-01#J0?
The RJK0329DPB-01#J0 has a channel-to-case thermal resistance θch–C of 2.08 °C/W, measured under standard test conditions (Tc = 25°C). This value reflects the intrinsic thermal path from the silicon die to the exposed drain pad in the LFPAK package and is critical for calculating junction temperature rise under steady-state power dissipation.
Is the RJK0329DPB-01#J0 suitable for avalanche operation?
Yes-the RJK0329DPB-01#J0 is fully rated for repetitive avalanche operation, with specified parameters including 25 A avalanche current (IAP) and 62.5 mJ single-pulse avalanche energy (EAR) at Tch = 25°C. These values are validated per JEDEC standards using the test circuit shown on page 5 of the datasheet, confirming ruggedness in inductive switching applications.
What is the body-diode forward voltage of the RJK0329DPB-01#J0 at rated current?
The body-diode forward voltage (VDF) of the RJK0329DPB-01#J0 is 0.78 V typical at IF = 55 A and VGS = 0 V, as specified in the Electrical Characteristics table on page 2 of the datasheet. This low VDF contributes to reduced conduction loss during freewheeling operation in buck and half-bridge topologies.
RJK0329DPB-01#J0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- SC-100, SOT-669
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 55A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 2.3mOhm @ 27.5A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 35 nC @ 4.5 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 5330 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 60W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK
RJK0329DPB-01#J0 FAQ
1.How can I place an order for RJK0329DPB-01#J0 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK0329DPB-01#J0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK0329DPB-01#J0 reliable?
The price and inventory of RJK0329DPB-01#J0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0329DPB-01#J0 is usually 5 days.
3.What payment methods are accepted for RJK0329DPB-01#J0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK0329DPB-01#J0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK0329DPB-01#J0?
RJK0329DPB-01#J0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK0329DPB-01#J0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK0329DPB-01#J0?
For technical support, including RJK0329DPB-01#J0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0329DPB-01#J0 requirements.
6.How does Aetrix verify that RJK0329DPB-01#J0 is sourced from the original manufacturer or authorized distributors?
All RJK0329DPB-01#J0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0329DPB-01#J0 meets industry standards.
7.What is the process for return or replacement of RJK0329DPB-01#J0?
All RJK0329DPB-01#J0 units undergo pre-shipment inspection (PSI). If there is an issue with RJK0329DPB-01#J0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK0329DPB-01#J0 part is unused and in its original packaging.
Return procedure for RJK0329DPB-01#J0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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