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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas RJK0348DPA-WS#J0

Name: RJK0348DPA-WS#J0
Brand: Renesas
SKU: RJK0348DPA-WS#J0
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: RJK0348DPA-WS#J0

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: RJK0348DPA-WS#J0.pdf

Description:: N-CHANNEL POWER MOSFET

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Product details

Overview

RJK0348DPA-WS#J0 from Renesas is a silicon N-channel power MOSFET designed for high-efficiency DC-DC conversion and synchronous rectification in server VRMs, POL converters, and motor drive half-bridges. It delivers R_DS(on) = 1.9 mΩ at V_GS = 10 V, supports 50 A continuous drain current, and operates with 4.5 V gate drive compatibility.

For engineers reviewing the RJK0348DPA-WS#J0 datasheet, RJK0348DPA-WS#J0 pinout, RJK0348DPA-WS#J0 application, or RJK0348DPA-WS#J0 equivalent, key selection criteria include low on-resistance at 4.5 V gate drive, avalanche energy rating of 96.1 mJ, and WPAK package thermal performance with θ_ch–C = 2.27 °C/W.

Technical Context

This MOSFET employs a trench-gate process optimized for low R_DS(on) and fast switching in high-frequency synchronous buck topologies. Its gate charge profile (Q_g = 34 nC, Q_gd = 7 nC) enables efficient operation at 500 kHz–1 MHz switching frequencies while minimizing Miller-induced shoot-through risk.

The integrated body diode exhibits t_rr = 38 ns and V_DF = 0.80 V at 50 A, supporting high-efficiency synchronous rectification without external Schottky replacement. Thermal design leverages the WPAK package's low channel-to-case resistance for direct heatsink mounting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage for 12 V input bus applications with margin
R_DS(on) @ 10 V	1.9 mΩ typ. - Enables <1.2 W conduction loss at 50 A in high-current POL stages
R_DS(on) @ 4.5 V	2.5 mΩ typ. - Ensures robust turn-on with standard logic-level gate drivers
Q_g	34 nC - Supports efficient 1 MHz switching with moderate gate driver power demand
t_r/t_f	6.8 ns / 11 ns - Minimizes switching transition losses in hard-switched converters
θ_ch–C	2.27 °C/W - Allows 55 W channel dissipation with ≤125 °C case temperature rise
E_AR	96.1 mJ - Withstands single-pulse inductive energy during load dump or short-circuit events

Pinout & Package

Package: WPAK (RENESAS code PWSN0008DA-A), surface-mount, thermally enhanced leadframe with exposed drain pad. Dimensions: 6.1 mm × 5.9 mm × 1.27 mm, mass 0.075 g, Ni/Pd/Au plating.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source connection for internal parallel die; low-inductance return path
4	Gate	Single gate input terminal; requires ≤4.7 Ω series resistance to control ringing
5, 6, 7, 8	Drain	Multi-terminal drain connection tied to exposed thermal pad; primary heat transfer path

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V	2.5 mΩ typ. enables use with 3.3 V/5 V microcontroller GPIOs without level-shifting
High-density mounting	WPAK footprint occupies 35.8 mm² - 40% smaller than SO-8 for same current rating
Fast switching	td(on)/td(off) = 13 ns / 66.5 ns allows >500 kHz operation with minimal dead-time penalty
Robust avalanche capability	31 A repetitive avalanche current supports reliable operation under inductive fault conditions
Pb-free construction	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profiles

Applications

Server VRM High-Side Switch	Industrial Motor Drive Half-Bridge
Use Scenario: Primary switch in 48 V–12 V intermediate bus converter delivering up to 200 A to CPU/GPU cores. IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET operating at 600 kHz with 10 V gate drive. Use Value: 1.9 mΩ R_DS(on) reduces conduction loss by 35% versus comparable 3.2 mΩ devices, improving full-load efficiency by 1.2%.	Use Scenario: Upper-leg switch in 24 V BLDC inverter driving 500 W fan or pump loads. IC Role / Device Role / Timing Role: N-channel high-side switch controlled via bootstrap gate driver with 4.5 V logic interface. Use Value: 2.5 mΩ R_DS(on) at 4.5 V ensures stable turn-on across temperature, eliminating need for gate boost circuitry.
Telecom DC-DC POL Converter	Automotive Body Control Module
Use Scenario: Point-of-load regulator supplying 3.3 V/30 A to FPGA I/O banks in base station radios. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck stage with 1 MHz switching. Use Value: 38 ns body diode reverse recovery time minimizes cross-conduction loss, enabling >95% efficiency at light load.	Use Scenario: Load switch for 12 V accessory circuits (e.g., LED lighting, window lift) with overcurrent protection. IC Role / Device Role / Timing Role: Single N-channel high-side switch with integrated current-sense FET configuration. Use Value: 96.1 mJ avalanche energy rating withstands inductive kickback from relay coils and solenoids without snubber.

Server VRM High-Side Switch

Industrial Motor Drive Half-Bridge

Use Scenario: Primary switch in 48 V–12 V intermediate bus converter delivering up to 200 A to CPU/GPU cores.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET operating at 600 kHz with 10 V gate drive.

Use Value: 1.9 mΩ R_DS(on) reduces conduction loss by 35% versus comparable 3.2 mΩ devices, improving full-load efficiency by 1.2%.

Use Scenario: Upper-leg switch in 24 V BLDC inverter driving 500 W fan or pump loads.

IC Role / Device Role / Timing Role: N-channel high-side switch controlled via bootstrap gate driver with 4.5 V logic interface.

Use Value: 2.5 mΩ R_DS(on) at 4.5 V ensures stable turn-on across temperature, eliminating need for gate boost circuitry.

Telecom DC-DC POL Converter

Automotive Body Control Module

Use Scenario: Point-of-load regulator supplying 3.3 V/30 A to FPGA I/O banks in base station radios.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck stage with 1 MHz switching.

Use Value: 38 ns body diode reverse recovery time minimizes cross-conduction loss, enabling >95% efficiency at light load.

Use Scenario: Load switch for 12 V accessory circuits (e.g., LED lighting, window lift) with overcurrent protection.

IC Role / Device Role / Timing Role: Single N-channel high-side switch with integrated current-sense FET configuration.

Use Value: 96.1 mJ avalanche energy rating withstands inductive kickback from relay coils and solenoids without snubber.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PBF	R_DS(on) = 3.0 mΩ @ 10 V; TO-220 package; θ_JA = 62 °C/W vs. WPAK's 2.27 °C/W	Requires heatsink for >15 A operation; unsuitable for ultra-dense board layouts	Select when legacy through-hole assembly or higher single-pulse surge tolerance is required
SiR872DP-T1-GE3	R_DS(on) = 2.0 mΩ @ 10 V; PowerPAK SO-8; Q_g = 42 nC (vs. 34 nC)	Slightly higher gate drive loss; same footprint not compatible due to different pinout and thermal pad layout	Select when existing SO-8 layout exists and thermal requirements allow 30% higher θ_ch–C

Compared with IRL3803PBF and SiR872DP-T1-GE3, RJK0348DPA-WS#J0 provides superior thermal performance per unit area and lower gate charge, making it optimal for high-power density, high-frequency synchronous rectification where board space and efficiency are critical.

Availability

RJK0348DPA-WS#J0 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom POL converters, and automotive body control modules requiring stable component supply and long-term production continuity.

Supply support for RJK0348DPA-WS#J0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC products for automotive, industrial, infrastructure, and IoT applications.

The RJK0348DPA-WS#J0 belongs to Renesas' WPAK-series power MOSFET family, engineered specifically for high-current, high-frequency DC-DC conversion where low R_DS(on), fast switching, and compact thermal packaging are essential.

FAQ

What is the maximum continuous drain current rating for RJK0348DPA-WS#J0?

The RJK0348DPA-WS#J0 is rated for 50 A continuous drain current (I_D) at T_c = 25°C. Derating applies above 25°C case temperature per the power vs. temperature curve; at 100°C case temperature, the usable current drops to approximately 28 A to maintain safe channel temperature limits.

Does RJK0348DPA-WS#J0 support logic-level gate drive?

Yes, RJK0348DPA-WS#J0 is fully characterized for 4.5 V gate drive, with R_DS(on) = 2.5 mΩ typ. at V_GS = 4.5 V and I_D = 25 A. Its gate threshold voltage (V_GS(off)) ranges from 1.2 V to 2.5 V, ensuring strong enhancement-mode turn-on with standard 3.3 V or 5 V logic outputs.

What is the thermal resistance from channel to case for RJK0348DPA-WS#J0?

The channel-to-case thermal resistance (θ_ch–C) of RJK0348DPA-WS#J0 is 2.27 °C/W, measured under specified test conditions (T_c = 25°C). This value reflects direct conduction from the silicon die to the exposed drain pad in the WPAK package, enabling efficient heatsink coupling without solder void sensitivity.

Can RJK0348DPA-WS#J0 be used in avalanche mode?

Yes, RJK0348DPA-WS#J0 is rated for repetitive avalanche operation with I_AP = 31 A and E_AR = 96.1 mJ at T_ch = 25°C and R_g ≥ 50 Ω. Avalanche testing follows the defined circuit in the datasheet; operation outside these conditions requires validation per application stress levels.

What is the gate-to-source leakage current specification for RJK0348DPA-WS#J0?

The gate-to-source leakage current (I_GSS) for RJK0348DPA-WS#J0 is specified as ±0.1 µA maximum at V_GS = ±20 V and V_DS = 0. This low leakage ensures minimal gate drive current requirement and stable biasing in high-impedance gate networks typical of high-frequency PWM controllers.

RJK0348DPA-WS#J0 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

RJK0348DPA-WS#J0 FAQ

1.How can I place an order for RJK0348DPA-WS#J0 through Aetrix?

Please submit a Request for Quotation (RFQ) for RJK0348DPA-WS#J0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RJK0348DPA-WS#J0 reliable?

The price and inventory of RJK0348DPA-WS#J0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0348DPA-WS#J0 is usually 5 days.

3.What payment methods are accepted for RJK0348DPA-WS#J0?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK0348DPA-WS#J0 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for RJK0348DPA-WS#J0?

RJK0348DPA-WS#J0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RJK0348DPA-WS#J0 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RJK0348DPA-WS#J0?

For technical support, including RJK0348DPA-WS#J0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0348DPA-WS#J0 requirements.

6.How does Aetrix verify that RJK0348DPA-WS#J0 is sourced from the original manufacturer or authorized distributors?

All RJK0348DPA-WS#J0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0348DPA-WS#J0 meets industry standards.

7.What is the process for return or replacement of RJK0348DPA-WS#J0?

All RJK0348DPA-WS#J0 units undergo pre-shipment inspection (PSI). If there is an issue with RJK0348DPA-WS#J0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RJK0348DPA-WS#J0 part is unused and in its original packaging.

Return procedure for RJK0348DPA-WS#J0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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