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Renesas RJK0349DPA-WS#J0
- Part No.:
- RJK0349DPA-WS#J0
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
RJK0349DPA-WS#J0.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:1,180
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Product details
Overview
RJK0349DPA-WS#J0 from Renesas is a silicon N-channel power MOSFET designed for high-efficiency DC-DC conversion and motor drive switching, featuring RDS(on) = 2.4 mΩ (typ. at VGS = 10 V), 30 V VDSS, and 45 A continuous drain current at Tc = 25°C. It supports 4.5 V gate drive and delivers low switching losses in compact WPAK (PWSN0008DA-A) packaging.
For engineers reviewing the RJK0349DPA-WS#J0 datasheet, RJK0349DPA-WS#J0 pinout, RJK0349DPA-WS#J0 application, or RJK0349DPA-WS#J0 equivalent, key selection criteria include its low on-resistance at 4.5 V gate drive, avalanche energy rating of 62.5 mJ, and thermal resistance of 2.5°C/W - critical for high-current synchronous rectification and battery-powered power stages.
Technical Context
This MOSFET employs a trench-gate process optimized for low RDS(on) and fast switching with Qg = 25 nC and tr = 6.5 ns. Its body diode exhibits VDF = 0.81 V (typ.) at IF = 45 A and trr = 30 ns, enabling efficient freewheeling in buck converters and H-bridge motor drivers.
The device operates within a channel temperature range of –55°C to +150°C and is rated for repetitive avalanche energy up to 62.5 mJ at Tch = 25°C with Rg ≥ 50 Ω. Its safe operating area (SOA) supports single-pulse ID(pulse) = 180 A under defined conditions (PW ≤ 10 µs, duty ≤ 1%).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage for 12 V/24 V automotive and industrial bus applications |
| RDS(on) @ VGS = 10 V | 2.4 mΩ typ. - Enables <1.1 W conduction loss at 45 A, reducing heatsink requirements |
| RDS(on) @ VGS = 4.5 V | 3.1 mΩ typ. - Ensures robust operation with logic-level gate drivers and microcontroller outputs |
| Qg | 25 nC - Low gate charge minimizes driver power and enables high-frequency PWM (≥500 kHz) |
| θch–c | 2.5°C/W - Direct thermal path from channel to case supports high-power density PCB layouts |
| EAR | 62.5 mJ - Rated avalanche energy allows reliable operation during inductive load switching transients |
| tr/tf | 6.5 ns / 9.8 ns - Fast edge rates reduce switching transition losses in hard-switched topologies |
Pinout & Package
Package: WPAK (RENESAS code PWSN0008DA-A), surface-mount, thermally enhanced leadframe with exposed drain pad. Dimensions: 5.9 mm × 4.21 mm × 1.27 mm (L × W × H), mass 0.075 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source connection for internal parallel die; low-inductance return path for high di/dt currents |
| 4 | Gate | Control terminal requiring ≤0.1 µA leakage; driven by 4.5–20 V logic or gate driver IC |
| 5, 6, 7, 8 | Drain | High-current output node tied to exposed copper pad; primary thermal and current path to PCB ground plane |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 4.5 V | 3.1 mΩ typ. enables direct interface with 3.3 V/5 V MCU GPIO without level-shifting |
| High-density mounting | WPAK package reduces footprint by ~40% vs. SO-8 while improving thermal performance |
| Fast switching speed | 11 ns turn-on delay + 6.5 ns rise time supports >1 MHz DC-DC operation with minimal dead-time loss |
| Pb-free construction | RoHS-compliant Ni/Pd/Au plating ensures compatibility with lead-free reflow profiles (JEDEC J-STD-020) |
| Robust avalanche capability | 25 A IAP and 62.5 mJ EAR allow unclamped inductive switching without external snubbers |
Applications
| DC-DC Synchronous Rectifier | BLDC Motor Phase Switch |
|---|---|
Use Scenario: Secondary-side switch in 12 V input, 3.3 V/5 V output buck converter for telecom power modules. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 90%. Use Value: 2.4 mΩ RDS(on) cuts rectifier loss by >65% vs. 40 V/45 A Schottky, enabling higher power density and cooler operation. | Use Scenario: High-current phase leg in 24 V brushless DC motor driver for industrial automation actuators. IC Role / Device Role / Timing Role: N-channel high-side or low-side switch in three-phase inverter bridge, controlled via gate driver with bootstrap or isolated supply. Use Value: 45 A continuous rating and 180 A pulse capability support peak torque delivery; low Qg enables precise PWM timing control. |
| Automotive Body Control Module | USB-C PD Power Path Switch |
Use Scenario: Load switch for 12 V accessory circuits (e.g., LED lighting, solenoid valves) in vehicle BCMs. IC Role / Device Role / Timing Role: Single-N MOSFET power switch with integrated gate protection, driven directly by 5 V microcontroller outputs. Use Value: 4.5 V gate drive compatibility eliminates need for external level shifters; low RDS(on) limits voltage drop across fuseless designs. | Use Scenario: Input power path switch in 20 V/5 A USB-C Power Delivery sink applications. IC Role / Device Role / Timing Role: Reverse-voltage protected, low-loss pass element between USB-C receptacle and system rail. Use Value: 30 V VDSS and 2.4 mΩ RDS(on) ensure safe operation under 20 V PD negotiation and minimal insertion loss (<50 mV at 5 A). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL3803PBF | RDS(on) = 3.0 mΩ @ 10 V; TO-220AB package; θJA = 62°C/W (no heatsink) | Larger footprint and higher thermal resistance limit use in space-constrained, high-power-density designs | Prefer RJK0349DPA-WS#J0 when board area and thermal performance are critical; IRL3803PBF suits through-hole prototyping or legacy TO-220 layouts |
| SiR872DP-T1-GE3 | RDS(on) = 2.2 mΩ @ 10 V; PowerPAK® SO-8; Qg = 34 nC; higher gate charge increases driver demand | Higher Qg degrades high-frequency efficiency; SO-8 thermal resistance exceeds WPAK by 1.1°C/W | RJK0349DPA-WS#J0 offers better thermal performance and lower gate drive loss - select for >300 kHz switching or thermally constrained environments |
Compared with IRL3803PBF and SiR872DP-T1-GE3, RJK0349DPA-WS#J0 delivers superior power density via its WPAK package, lowest thermal resistance (2.5°C/W), and optimized gate charge for high-frequency efficiency - making it preferred for compact, high-current synchronous rectifiers and motor drives.
Availability
RJK0349DPA-WS#J0 is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drives, automotive body control modules, and USB-C PD power path switching requiring stable component supply and RoHS-compliant sourcing.
Supply support for RJK0349DPA-WS#J0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, infrastructure, and IoT applications.
The RJK0349DPA-WS#J0 belongs to Renesas' WPAK-series low-RDS(on) power MOSFET product line, engineered specifically for high-efficiency, high-current switching in space-constrained power systems where thermal performance and gate-drive simplicity are critical.
FAQ
What is the maximum continuous drain current rating for RJK0349DPA-WS#J0?
The RJK0349DPA-WS#J0 is rated for 45 A continuous drain current (ID) at case temperature Tc = 25°C. This rating assumes proper PCB copper area for thermal dissipation and derates linearly with increasing case temperature per the power vs. temperature derating curve shown in the datasheet. At Tc = 100°C, the usable ID drops to approximately 25 A.
Does RJK0349DPA-WS#J0 support logic-level gate drive?
Yes, RJK0349DPA-WS#J0 is fully compatible with logic-level gate drive: its RDS(on) is specified at 3.1 mΩ (typ.) with VGS = 4.5 V, and gate threshold voltage VGS(off) ranges from 1.2 V to 2.5 V. This allows direct driving from 3.3 V or 5 V microcontrollers without external level-shifting circuitry.
What is the thermal resistance from channel to case (θch–c) for RJK0349DPA-WS#J0?
The RJK0349DPA-WS#J0 has a channel-to-case thermal resistance (θch–c) of 2.5°C/W, measured under standard test conditions (Tc = 25°C). This low value reflects the WPAK package's direct thermal path from the silicon die to the exposed drain pad, enabling efficient heat transfer to the PCB copper pour or heatsink.
Can RJK0349DPA-WS#J0 be used in avalanche-mode operation?
Yes, RJK0349DPA-WS#J0 is rated for repetitive avalanche operation with IAP = 25 A and EAR = 62.5 mJ at Tch = 25°C and Rg ≥ 50 Ω. This specification validates its use in unclamped inductive switching applications such as relay drivers or flyback snubberless designs, provided avalanche energy per pulse remains within the rated limit.
What is the gate-to-source leakage current (IGSS) specification for RJK0349DPA-WS#J0?
The gate-to-source leakage current (IGSS) for RJK0349DPA-WS#J0 is specified as ±0.1 µA maximum at VGS = ±20 V and VDS = 0 V. This low leakage ensures minimal gate drive current requirement and stable turn-off behavior, supporting efficient operation in battery-powered and low-quiescent-current systems.
RJK0349DPA-WS#J0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
RJK0349DPA-WS#J0 FAQ
1.How can I place an order for RJK0349DPA-WS#J0 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK0349DPA-WS#J0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK0349DPA-WS#J0 reliable?
The price and inventory of RJK0349DPA-WS#J0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0349DPA-WS#J0 is usually 5 days.
3.What payment methods are accepted for RJK0349DPA-WS#J0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK0349DPA-WS#J0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK0349DPA-WS#J0?
RJK0349DPA-WS#J0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK0349DPA-WS#J0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK0349DPA-WS#J0?
For technical support, including RJK0349DPA-WS#J0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0349DPA-WS#J0 requirements.
6.How does Aetrix verify that RJK0349DPA-WS#J0 is sourced from the original manufacturer or authorized distributors?
All RJK0349DPA-WS#J0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0349DPA-WS#J0 meets industry standards.
7.What is the process for return or replacement of RJK0349DPA-WS#J0?
All RJK0349DPA-WS#J0 units undergo pre-shipment inspection (PSI). If there is an issue with RJK0349DPA-WS#J0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK0349DPA-WS#J0 part is unused and in its original packaging.
Return procedure for RJK0349DPA-WS#J0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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