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Renesas RJK0349DSP-00#J0
- Part No.:
- RJK0349DSP-00#J0
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
RJK0349DSP-00#J0.pdf
- Description:
- MOSFET N-CH 30V 20A 8SOP
- Quantity:
- Payment:
- Shipping:
Inventory:7,527
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Product details
Overview
RJK0349DSP-00#J0 from Renesas Electronics is a silicon N-channel power MOSFET designed for high-efficiency DC-DC power switching in compact, high-current applications. It delivers 20 A continuous drain current at 30 V VDSS, features 2.9 mΩ typical RDS(on) at VGS = 10 V, supports 4.5 V logic-level gate drive, and uses SOP-8 (FP-8DAV) surface-mount packaging for high-density PCB layouts.
For engineers reviewing the RJK0349DSP-00#J0 datasheet, RJK0349DSP-00#J0 pinout, RJK0349DSP-00#J0 application, or RJK0349DSP-00#J0 equivalent, this device is selected for low-conduction-loss synchronous rectification, battery protection circuits, and load-switching where thermal performance on FR4 boards and fast switching (td(on) = 11 ns, tf = 9.8 ns) are critical design requirements.
Technical Context
This MOSFET employs planar silicon process technology optimized for low RDS(on) and controlled gate charge (Qg = 25 nC), enabling efficient operation in 10–25 V input DC-DC converters. Its body diode exhibits 30 ns reverse recovery time (trr) and 0.78 V forward voltage (VDF) at 20 A, supporting moderate-frequency synchronous rectification without external Schottky supplementation.
The device is characterized for operation up to 150°C channel temperature with θch-a = 50°C/W on a 40 × 40 × 1.6 mm FR4 board, and its avalanche rating (IAP = 20 A, EAR = 40 mJ) provides limited ruggedness against inductive switching transients under controlled test conditions (Rg ≥ 50 Ω).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage compatible with 24 V industrial bus and 12 V automotive systems |
| RDS(on) @ VGS = 10 V | 2.9 mΩ typ. - Enables ≤0.6 W conduction loss at 20 A, reducing heatsink requirements |
| RDS(on) @ VGS = 4.5 V | 3.6 mΩ typ. - Ensures full enhancement with standard 5 V microcontroller GPIOs |
| Qg | 25 nC - Low gate charge minimizes driver power loss and enables >1 MHz switching in optimized layouts |
| td(off) | 58.5 ns - Short turn-off delay supports precise dead-time control in half-bridge configurations |
| Ciss | 3850 pF - Input capacitance impacts gate drive loop stability and Miller effect in high-dV/dt environments |
| Pch | 2.5 W - Channel dissipation limit on FR4 board defines safe continuous power handling without forced cooling |
Pinout & Package
Package: SOP-8 (FP-8DAV), Renesas code PRSP0008DD-D, JEITA code P-SOP8-3.95 × 4.9-1.27, mass 0.085 g, Ni/Pd/Au plating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source connection for internal parallel die; requires low-inductance ground plane routing |
| 4 | Gate | Control terminal; 1.5 Ω internal gate resistance limits ringing but mandates <4.7 Ω external series Rg for optimal switching |
| 5, 6, 7, 8 | Drain | High-current output node; four parallel pins reduce current density and package inductance in high-di/dt paths |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at 4.5 V VGS, eliminating need for gate boosters in 5 V control systems |
| Low RDS(on) at 10 V | 2.9 mΩ typ. reduces I²R losses by >30% versus comparable 30 V MOSFETs in 12–24 V buck converters |
| Optimized gate charge | 25 nC Qg with 5.3 nC Qgd yields low Miller ratio (Qgd/Qg ≈ 21%), improving hard-switching robustness |
| Fast switching | 11 ns td(on) and 9.8 ns tf enable clean transitions in 500 kHz–1 MHz SMPS designs |
| Pb-free construction | RoHS-compliant termination meets IPC-J-STD-020 moisture sensitivity level 3 (MSL3) for standard reflow |
Applications
| DC-DC Synchronous Rectifier | Battery Protection Switch |
|---|---|
Use Scenario: Secondary-side switch in isolated 12 V → 3.3 V/5 V flyback or forward converter for telecom power supplies. IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to improve efficiency above 85% at full load. Use Value: 2.9 mΩ RDS(on) cuts conduction loss by ~65% vs. 40 V/40 A Schottky, directly increasing light-load efficiency. |
Use Scenario: Main discharge path switch in 3S Li-ion battery pack with overcurrent and short-circuit protection. IC Role / Device Role: High-current N-channel load switch controlled by protection IC's gate driver output. Use Value: 20 A continuous rating and 160 A pulse capability handle surge currents during hot-plug events without derating. |
| Motor Driver Half-Bridge | Hot-Swap Controller |
Use Scenario: Low-side switch in 24 V brushed DC motor driver for industrial actuators and HVAC blowers. IC Role / Device Role: PWM-controlled power stage element with integrated body diode for freewheeling current recirculation. Use Value: 30 ns trr and 0.78 V VDF minimize freewheeling loss and voltage spikes during commutation. |
Use Scenario: Inrush current limiter and fault isolation switch in 12 V/48 V server backplane power distribution. IC Role / Device Role: Primary pass element in discrete hot-swap circuit with external current sense and gate control. Use Value: 4.5 V gate threshold allows direct interface with standard hot-swap controller reference voltages (e.g., LTC4211). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 3.2 mΩ @ 10 V; Qg = 32 nC; TO-252 package; higher gate charge increases driver loss | Larger footprint and higher thermal resistance (θJA ≈ 62°C/W) require larger copper area for same power dissipation | Choose when TO-252 mounting is preferred and gate drive strength permits higher Qg |
| Si7852DP-T1-GE3 | RDS(on) = 2.7 mΩ @ 10 V; Qg = 28 nC; same SOP-8 footprint; slightly lower RDS(on) but no specified avalanche rating | No documented EAR or IAP specs - unsuitable for circuits requiring unclamped inductive switching margin | Prefer for pure efficiency-critical DC-DC stages where avalanche stress is absent or externally clamped |
Compared with IRF7470PBF and Si7852DP-T1-GE3, RJK0349DSP-00#J0 offers the best balance of low RDS(on), low Qg, and verified avalanche capability in SOP-8 - making it optimal for space-constrained, thermally sensitive, and moderately rugged power switches.
Availability
RJK0349DSP-00#J0 is available at Aetrix Electronics and suitable for DC-DC converters, battery management systems, and motor control modules requiring stable component supply, RoHS compliance, and consistent SOP-8 sourcing across production batches.
Supply support for RJK0349DSP-00#J0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The RJK0349DSP-00#J0 belongs to Renesas' silicon power MOSFET product line, engineered for high-current, low-voltage switching in space-constrained power conversion and protection applications.
FAQ
What is the maximum continuous drain current rating for RJK0349DSP-00#J0 at 25°C ambient?
The RJK0349DSP-00#J0 is rated for 20 A continuous drain current (ID) at Ta = 25°C when mounted on a 40 × 40 × 1.6 mm FR4 board per the datasheet's thermal test condition. This rating assumes proper PCB copper area and natural convection; actual usable current decreases with rising ambient temperature or reduced copper area. The RJK0349DSP-00#J0 must be derated according to the Power vs. Temperature Derating curve on page 3 of the datasheet.
Does RJK0349DSP-00#J0 support 5 V logic-level gate drive?
Yes, RJK0349DSP-00#J0 is explicitly characterized for 4.5 V gate drive, with RDS(on) = 3.6 mΩ typ. at VGS = 4.5 V and ID = 10 A. This ensures full enhancement using standard 5 V microcontroller outputs or gate drivers without level-shifting. The gate threshold voltage (VGS(off)) ranges from 1.2 V to 2.5 V, providing noise margin against false turn-on in noisy environments. RJK0349DSP-00#J0 thus operates reliably in 5 V control systems.
What is the thermal resistance from channel to ambient for RJK0349DSP-00#J0?
The channel-to-ambient thermal impedance (θch-a) for RJK0349DSP-00#J0 is 50°C/W when mounted on a 40 × 40 × 1.6 mm FR4 glass epoxy board, as specified in the Absolute Maximum Ratings table. This value applies under pulsed conditions (PW ≤ 10 s) and defines the steady-state temperature rise per watt of dissipated power. For accurate thermal design, engineers must use the transient thermal impedance curve on page 5 to evaluate short-duration power pulses. RJK0349DSP-00#J0 performance depends critically on PCB layout adherence to this thermal test condition.
Is RJK0349DSP-00#J0 suitable for avalanche operation?
RJK0349DSP-00#J0 is rated for repetitive avalanche energy (EAR) of 40 mJ and avalanche current (IAP) of 20 A under defined test conditions: Tch = 25°C, Rg ≥ 50 Ω, and duty cycle < 0.1%. These ratings apply only to unclamped inductive switching events and are not intended for continuous avalanche operation. Designers must verify circuit conditions match the test setup before relying on this capability. RJK0349DSP-00#J0 should not be used in circuits where avalanche stress exceeds these validated limits.
What is the gate-to-source leakage current specification for RJK0349DSP-00#J0?
The gate-to-source leakage current (IGSS) for RJK0349DSP-00#J0 is specified as ±0.1 µA maximum at VGS = ±20 V and VDS = 0 V, per the Electrical Characteristics table. This low leakage ensures minimal gate drive current demand and stable biasing in high-impedance gate networks. It reflects the integrity of the gate oxide and supports reliable long-term operation in 5 V logic-driven applications. RJK0349DSP-00#J0 maintains this specification across its full operating temperature range.
RJK0349DSP-00#J0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.8mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 25 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3850 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOP
RJK0349DSP-00#J0 FAQ
1.How can I place an order for RJK0349DSP-00#J0 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK0349DSP-00#J0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK0349DSP-00#J0 reliable?
The price and inventory of RJK0349DSP-00#J0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0349DSP-00#J0 is usually 5 days.
3.What payment methods are accepted for RJK0349DSP-00#J0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK0349DSP-00#J0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK0349DSP-00#J0?
RJK0349DSP-00#J0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK0349DSP-00#J0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK0349DSP-00#J0?
For technical support, including RJK0349DSP-00#J0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0349DSP-00#J0 requirements.
6.How does Aetrix verify that RJK0349DSP-00#J0 is sourced from the original manufacturer or authorized distributors?
All RJK0349DSP-00#J0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0349DSP-00#J0 meets industry standards.
7.What is the process for return or replacement of RJK0349DSP-00#J0?
All RJK0349DSP-00#J0 units undergo pre-shipment inspection (PSI). If there is an issue with RJK0349DSP-00#J0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK0349DSP-00#J0 part is unused and in its original packaging.
Return procedure for RJK0349DSP-00#J0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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