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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas RJK0349DSP-01#J0

Name: RJK0349DSP-01#J0
Brand: Renesas
SKU: RJK0349DSP-01#J0
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: RJK0349DSP-01#J0

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: RJK0349DSP-01#J0.pdf

Description:: MOSFET N-CH 30V 20A 8SOP

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Product details

Overview

RJK0349DSP-01#J0 from Renesas Electronics is a silicon N-channel power MOSFET designed for high-efficiency DC-DC conversion and load switching in compact power supplies. It delivers 20 A continuous drain current at 30 V V_DSS, features 2.9 mΩ typ. R_DS(on) at V_GS = 10 V, supports 4.5 V gate drive, and uses SOP-8 (FP-8DAV) packaging for high-density PCB layouts - deployed in server VRMs and industrial motor drivers.

For engineers reviewing the RJK0349DSP-01#J0 datasheet, RJK0349DSP-01#J0 pinout, RJK0349DSP-01#J0 application, or RJK0349DSP-01#J0 equivalent, this page provides verified electrical parameters, thermal derating curves, switching timing data, and validated alternative parts for synchronous buck converter design and hot-swap circuit implementation.

Technical Context

This MOSFET employs a trench-gate process optimized for low R_DS(on) and fast switching with Q_g = 25 nC and t_d(off) = 58.5 ns at V_GS = 10 V. Its body diode exhibits V_DF = 0.78 V typ. at I_F = 20 A and t_rr = 30 ns under dI_F/dt = 100 A/µs, enabling efficient synchronous rectification.

The device operates within T_ch = 150°C max and achieves θ_ch-a = 50°C/W on FR4 (40 × 40 × 1.6 mm), supporting stable operation up to 2.5 W channel dissipation. Avalanche rating is specified at I_AP = 20 A and E_AR = 40 mJ with R_g ≥ 50 Ω, confirming ruggedness in inductive switching applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage in high-side switch or synchronous rectifier position without breakdown.
R_DS(on) (V_GS = 10 V)	2.9 mΩ typ. - Enables <100 mW conduction loss at 20 A, critical for >95% efficiency in 12 V input VRMs.
R_DS(on) (V_GS = 4.5 V)	3.6 mΩ typ. - Ensures full enhancement with logic-level gate drivers, eliminating need for charge pumps in 5 V control systems.
Q_g	25 nC - Determines gate driver power requirement; enables use of low-power drivers like Renesas ISL6612B in dual-MOSFET phase legs.
t_d(off) + t_f	68.3 ns total - Limits switching transition time, reducing overlap loss in synchronous buck converters operating up to 1 MHz.
I_D (continuous)	20 A - Sustains full-rated output current in TO-252-equivalent power density without external heatsinking on standard FR4.
V_GS(th)	1.2–2.5 V - Guarantees turn-on margin across temperature and process variation, supporting robust gate biasing in automotive-grade modules.

Pinout & Package

Package: SOP-8 (FP-8DAV), Renesas code PRSP0008DD-D, JEITA code P-SOP8-3.95 × 4.9-1.27, mass 0.085 g, Ni/Pd/Au plating.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source node for internal parallel die; connects directly to PCB ground plane for low-inductance return path.
4	Gate	Control terminal requiring ≤0.1 µA leakage; driven by dedicated gate driver IC with 4.7 Ω series resistor per layout guidelines.
5, 6, 7, 8	Drain	High-current output node tied to input rail or inductor; multiple pins reduce current density and thermal resistance in high-I_D paths.

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Full enhancement at V_GS = 4.5 V enables direct interface with 5 V microcontrollers and PWM controllers without level-shifting.
Low R_DS(on) × Q_g figure of merit	2.9 mΩ × 25 nC = 72.5 mΩ·nC - Optimized trade-off between conduction and switching losses in 300 kHz–1 MHz DC-DC designs.
Integrated body diode with fast recovery	t_rr = 30 ns and Q_rr ≈ 1.5 nC - Minimizes reverse recovery loss during synchronous rectification in buck converters.
Pb-free and RoHS-compliant construction	Meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL3) and IPC/JEDEC J-STD-033 handling requirements for reflow assembly.
Avalanche-rated ruggedness	E_AR = 40 mJ at T_ch = 25°C - Withstands repetitive inductive energy spikes in motor gate drivers and solenoid controls without failure.

Applications

Server Voltage Regulator Modules	Industrial Motor Gate Drivers
Use Scenario: High-current, multi-phase buck converters supplying CPU/GPU core voltage in 1U rack servers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 30 V input, 0.8–1.8 V output VRM with 500 kHz–1 MHz switching frequency. Use Value: 2.9 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 4.5 mΩ MOSFETs, lowering junction temperature rise by 12°C at 20 A.	Use Scenario: Half-bridge gate driver stage controlling 24 V brushed DC motors in PLC-controlled factory automation systems. IC Role / Device Role / Timing Role: High-current switching element in H-bridge output stage, operated with complementary PWM signals and dead-time control. Use Value: 160 A peak drain current rating handles motor stall currents; 50°C/W θ_ch-a allows operation at 75°C ambient without forced air cooling.
Hot-Swap Power Controllers	Telecom DC-DC Converters
Use Scenario: Inrush current limiting and fault protection in 48 V intermediate bus modules for blade servers and network switches. IC Role / Device Role / Timing Role: Main pass transistor in active OR-ing and hot-swap controller circuits (e.g., LTC4215-based designs). Use Value: Low V_GS(th) ensures precise turn-on threshold; 20 A continuous rating supports 100 W hot-plug slots with <50 mV dropout at full load.	Use Scenario: Isolated forward or flyback secondary-side synchronous rectification in 48 V telecom power supplies meeting NEBS Level 3 requirements. IC Role / Device Role / Timing Role: Secondary-side switch replacing Schottky diodes to improve efficiency and reduce thermal load in enclosed chassis. Use Value: Body diode V_DF = 0.78 V enables soft-start clamping; 30 ns t_rr prevents cross-conduction during zero-voltage switching transitions.

Server Voltage Regulator Modules

Industrial Motor Gate Drivers

Use Scenario: High-current, multi-phase buck converters supplying CPU/GPU core voltage in 1U rack servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 30 V input, 0.8–1.8 V output VRM with 500 kHz–1 MHz switching frequency.

Use Value: 2.9 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 4.5 mΩ MOSFETs, lowering junction temperature rise by 12°C at 20 A.

Use Scenario: Half-bridge gate driver stage controlling 24 V brushed DC motors in PLC-controlled factory automation systems.

IC Role / Device Role / Timing Role: High-current switching element in H-bridge output stage, operated with complementary PWM signals and dead-time control.

Use Value: 160 A peak drain current rating handles motor stall currents; 50°C/W θ_ch-a allows operation at 75°C ambient without forced air cooling.

Hot-Swap Power Controllers

Telecom DC-DC Converters

Use Scenario: Inrush current limiting and fault protection in 48 V intermediate bus modules for blade servers and network switches.

IC Role / Device Role / Timing Role: Main pass transistor in active OR-ing and hot-swap controller circuits (e.g., LTC4215-based designs).

Use Value: Low V_GS(th) ensures precise turn-on threshold; 20 A continuous rating supports 100 W hot-plug slots with <50 mV dropout at full load.

Use Scenario: Isolated forward or flyback secondary-side synchronous rectification in 48 V telecom power supplies meeting NEBS Level 3 requirements.

IC Role / Device Role / Timing Role: Secondary-side switch replacing Schottky diodes to improve efficiency and reduce thermal load in enclosed chassis.

Use Value: Body diode V_DF = 0.78 V enables soft-start clamping; 30 ns t_rr prevents cross-conduction during zero-voltage switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 3.1 mΩ @ 10 V; Q_g = 29 nC; TO-252 package (larger footprint, higher θ_JA)	Requires PCB area increase and thermal vias for equivalent thermal performance; not suitable for ultra-dense SOP-8 layouts.	Select when board space permits larger package and higher avalanche energy (E_AS = 120 mJ) is required for motor drive surge immunity.
SiR872DP-T1-GE3	R_DS(on) = 2.7 mΩ @ 10 V; Q_g = 32 nC; same SOP-8 footprint but different pinout (G-S-D-S-D-S-D-S)	Pinout incompatible - requires PCB redesign; higher gate charge increases driver loss in high-frequency operation.	Choose only if lower R_DS(on) justifies layout revision and gate driver upgrade; verify routing compatibility before migration.

Compared with IRF7470PBF and SiR872DP-T1-GE3, RJK0349DSP-01#J0 offers optimal balance of low gate charge (25 nC), validated SOP-8 thermal performance (50°C/W), and pin-compatible sourcing for existing Renesas-based VRM designs - making it preferred for space-constrained, high-efficiency 20 A switching nodes where layout reuse is critical.

Availability

RJK0349DSP-01#J0 is available at Aetrix Electronics and suitable for server VRMs, industrial motor gate drivers, and telecom DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable Pb-free manufacturing.

Supply support for RJK0349DSP-01#J0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

RJK0349DSP-01#J0 belongs to Renesas' high-current logic-level MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in enterprise computing and industrial automation systems.

FAQ

What is the maximum continuous drain current rating for RJK0349DSP-01#J0?

The RJK0349DSP-01#J0 is rated for 20 A continuous drain current (I_D) at T_a = 25°C with FR4 board (40 × 40 × 1.6 mm). Derating applies above 25°C ambient; at 70°C, usable current drops to approximately 14 A based on the published power vs. temperature curve. This rating assumes proper PCB copper area and thermal via implementation per Renesas application note AN-8002.

Does RJK0349DSP-01#J0 support 5 V gate drive in practical applications?

Yes, RJK0349DSP-01#J0 is explicitly characterized for 4.5 V gate drive, with R_DS(on) = 3.6 mΩ typ. at V_GS = 4.5 V and I_D = 10 A. Its V_GS(th) range of 1.2–2.5 V ensures reliable turn-on with standard 5 V logic outputs, eliminating need for gate voltage boosting in microcontroller-driven load switches and hot-swap controllers using the RJK0349DSP-01#J0.

What is the thermal resistance from channel to ambient for RJK0349DSP-01#J0?

The channel-to-ambient thermal impedance θ_ch-a for RJK0349DSP-01#J0 is 50°C/W when mounted on a standard glass epoxy board (FR4, 40 × 40 × 1.6 mm) with recommended copper pour and thermal vias. This value is measured under pulsed conditions (PW ≤ 10 s) and forms the basis for junction temperature calculation: T_ch = T_a + (P_ch × θ_ch-a). The RJK0349DSP-01#J0 datasheet confirms this on page 1, Absolute Maximum Ratings table.

Can RJK0349DSP-01#J0 be used in avalanche mode repeatedly?

Yes, RJK0349DSP-01#J0 is rated for repetitive avalanche operation with I_AP = 20 A and E_AR = 40 mJ at T_ch = 25°C and R_g ≥ 50 Ω. The test circuit and waveform are defined on page 5 of the datasheet. However, sustained avalanche operation must respect the SOA limits and thermal derating - the RJK0349DSP-01#J0 is not intended for continuous avalanche conduction but for controlled energy absorption during inductive switching transients.

Is the pinout of RJK0349DSP-01#J0 compatible with standard SOP-8 MOSFETs?

Yes, the RJK0349DSP-01#J0 uses a non-standard but documented SOP-8 pinout: pins 1–3 = Source, pin 4 = Gate, pins 5–8 = Drain. This differs from common dual-source/drain configurations but matches Renesas' FP-8DAV layout. Layout files and land patterns for RJK0349DSP-01#J0 are provided in Renesas' package drawing PRSP0008DD-D, ensuring mechanical compatibility with SOP-8 footprints while assigning terminals per the device's internal structure.

RJK0349DSP-01#J0 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.8mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3850 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOP

RJK0349DSP-01#J0 FAQ

1.How can I place an order for RJK0349DSP-01#J0 through Aetrix?

Please submit a Request for Quotation (RFQ) for RJK0349DSP-01#J0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RJK0349DSP-01#J0 reliable?

The price and inventory of RJK0349DSP-01#J0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0349DSP-01#J0 is usually 5 days.

3.What payment methods are accepted for RJK0349DSP-01#J0?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK0349DSP-01#J0 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for RJK0349DSP-01#J0?

RJK0349DSP-01#J0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RJK0349DSP-01#J0 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RJK0349DSP-01#J0?

For technical support, including RJK0349DSP-01#J0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0349DSP-01#J0 requirements.

6.How does Aetrix verify that RJK0349DSP-01#J0 is sourced from the original manufacturer or authorized distributors?

All RJK0349DSP-01#J0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0349DSP-01#J0 meets industry standards.

7.What is the process for return or replacement of RJK0349DSP-01#J0?

All RJK0349DSP-01#J0 units undergo pre-shipment inspection (PSI). If there is an issue with RJK0349DSP-01#J0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RJK0349DSP-01#J0 part is unused and in its original packaging.

Return procedure for RJK0349DSP-01#J0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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