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Renesas RJK0351DPA-02#J0
- Part No.:
- RJK0351DPA-02#J0
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
RJK0351DPA-02#J0.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:50,000
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Product details
Overview
RJK0351DPA-02#J0 from Renesas is a silicon N-channel power MOSFET designed for high-efficiency DC-DC conversion and motor drive switching, featuring 30 V VDSS, 40 A continuous drain current, 3.2 mΩ RDS(on) at VGS = 10 V, and WPAK package with 8-pin source-drain-gate configuration.
For engineers reviewing the RJK0351DPA-02#J0 datasheet, RJK0351DPA-02#J0 pinout, RJK0351DPA-02#J0 application, or RJK0351DPA-02#J0 equivalent, key selection criteria include low RDS(on) at 4.5 V gate drive, avalanche energy rating of 28.9 mJ, and thermal resistance θch-C = 2.78 °C/W for high-power density board layouts.
Technical Context
This MOSFET employs a trench-gate process optimized for low on-resistance and fast switching in synchronous buck converters and H-bridge motor drivers. Its gate threshold voltage (VGS(off) = 1.2–2.5 V) enables reliable turn-on with standard logic-level drivers, while its Qg = 17 nC and Qgd = 3.7 nC support efficient PWM operation up to several hundred kHz.
The device integrates a body diode with VDF = 0.82 V (typ.) at 40 A and trr = 25 ns, enabling robust freewheeling in inductive loads. Its maximum safe operating area (SOA) is defined up to 100 µs pulse width at Tc = 25°C, with RDS(on) derating linearly from 3.2 mΩ at 25°C to ~6.0 mΩ at 125°C case temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - supports 24 V nominal bus systems with margin for transient spikes |
| RDS(on) @ VGS = 10 V | 3.2 mΩ typ. - enables <1.3 W conduction loss at 20 A, critical for thermally constrained PCBs |
| RDS(on) @ VGS = 4.5 V | 4.3 mΩ typ. - ensures full enhancement with 3.3 V/5 V microcontroller GPIOs without level-shifting |
| Qg | 17 nC - determines gate driver power requirement and switching loss trade-off at 500 kHz PWM |
| tr/tf | 5.0 ns / 6.4 ns - supports clean edge transitions in high-frequency SMPS designs |
| θch-C | 2.78 °C/W - allows 45 W channel dissipation with ≤125°C junction rise over 25°C case |
| EAR | 28.9 mJ - specifies single-pulse avalanche ruggedness under inductive load interruption |
Pinout & Package
Package: WPAK (RENESAS code PWSN0008DA-A), surface-mount, 8-terminal leadless package with exposed drain pad for thermal management and high-current routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source connection for internal parallel die; low-inductance return path for load current |
| 4 | Gate | Control input requiring <17 nC charge; isolated from power paths to minimize noise coupling |
| 5, 6, 7, 8 | Drain | High-current output node tied to exposed copper pad; handles 40 A continuous with minimal thermal resistance |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Guaranteed turn-on at VGS = 4.5 V enables direct interface with 3.3 V/5 V MCUs and gate drivers |
| Low RDS(on) × Qg figure-of-merit | 3.2 mΩ × 17 nC = 54.4 mΩ·nC - balances conduction and switching losses in 300–1000 kHz DC-DC stages |
| Integrated avalanche-rated body diode | 25 ns trr and 0.82 V VDF reduce freewheeling losses and EMI in half-bridge motor drives |
| Thermally enhanced WPAK package | Exposed drain pad and low θch-C = 2.78 °C/W allow >40 W power handling on 2 oz copper with 2-in² thermal pad |
Applications
| DC-DC Synchronous Buck Converter | Brushed DC Motor Driver (H-Bridge High-Side) |
|---|---|
Use Scenario: 12–24 V input to 3.3/5/12 V output power supply in industrial PLCs and telecom equipment. IC Role / Device Role / Timing Role: High-side switch in synchronous rectification stage, operating at 300–600 kHz PWM with dead-time control. Use Value: 3.2 mΩ RDS(on) reduces conduction loss by >40% vs. comparable 5 mΩ MOSFETs, improving full-load efficiency to >94%. | Use Scenario: Bidirectional 24 V brushed motor control in automated gate actuators and HVAC dampers. IC Role / Device Role / Timing Role: High-side N-channel switch in one leg of an H-bridge, driven by bootstrap gate driver. Use Value: 4.3 mΩ RDS(on) at 4.5 V gate drive ensures full enhancement during battery-voltage sag (down to 20 V), maintaining torque response. |
| Automotive Body Control Module (BCM) Load Switch | Server VRM High-Current Phase Leg |
Use Scenario: 12 V load switching for LED lighting, solenoids, and relays in automotive BCMs meeting AEC-Q101 stress requirements. IC Role / Device Role / Timing Role: Low-side or high-side discrete power switch controlled via CAN/LIN microcontroller GPIOs. Use Value: Pb-free WPAK package and 150°C Tch rating support under-hood ambient temperatures up to 125°C with margin. | Use Scenario: 48 V to 1 V/100+ A point-of-load conversion in AI accelerator server VRMs. IC Role / Device Role / Timing Role: Bottom-side FET in multiphase buck converter, operating at 1 MHz with tight duty-cycle control. Use Value: 2.78 °C/W θch-C and 45 W Pch enable stable 100 A phase current handling with <10°C temperature rise on 4-layer boards. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL3803PbF | RDS(on) = 3.0 mΩ @ 10 V but higher Qg = 22 nC; TO-220AB package with higher θJC = 3.0 °C/W | Larger footprint and lower thermal performance limit usable current density in compact PCBs | Prefer RJK0351DPA-02#J0 for space-constrained, high-frequency designs where WPAK's thermal advantage outweighs minor RDS(on) difference. |
| SiR872DP | RDS(on) = 3.3 mΩ @ 10 V, Qg = 15.5 nC, PowerPAK SO-8 package; no specified avalanche energy rating | Lacks documented EAR spec, limiting use in inductive switching with unclamped transients | Select RJK0351DPA-02#J0 when circuit-level avalanche robustness (28.9 mJ) is required for motor or relay driving. |
Compared with IRL3803PbF and SiR872DP, RJK0351DPA-02#J0 delivers superior thermal performance in a smaller footprint and includes a validated avalanche energy rating-critical for reliability in motor control and industrial power switching where transient overvoltage events occur.
Availability
RJK0351DPA-02#J0 is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, automotive body electronics, and server VRM phase legs requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for RJK0351DPA-02#J0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The RJK0351DPA-02#J0 belongs to Renesas' WPAK-packaged logic-level power MOSFET product line, engineered for high-current, high-efficiency switching in space-constrained power stages where thermal management and gate-drive simplicity are critical.
FAQ
What is the maximum continuous drain current rating for RJK0351DPA-02#J0?
The RJK0351DPA-02#J0 has a rated continuous drain current (ID) of 40 A at Tc = 25°C, as specified in its Absolute Maximum Ratings table. This rating assumes proper PCB thermal design with the WPAK package's exposed drain pad soldered to a ≥2-in² copper area. Derating applies above 25°C case temperature per the Power vs. Temperature Derating curve on page 3 of the datasheet.
Does RJK0351DPA-02#J0 support 3.3 V gate drive?
RJK0351DPA-02#J0 is not fully enhanced at 3.3 V gate drive. Its gate threshold voltage (VGS(off)) ranges from 1.2 V to 2.5 V, but RDS(on) is only guaranteed at VGS = 4.5 V (4.3 mΩ typ.) and VGS = 10 V (3.2 mΩ typ.). For reliable low-loss operation, a minimum 4.5 V gate drive is required; 3.3 V may result in excessive conduction loss and thermal runaway.
What is the avalanche energy rating of RJK0351DPA-02#J0 and how is it tested?
The RJK0351DPA-02#J0 has a single-pulse avalanche energy rating (EAR) of 28.9 mJ, measured at Tch = 25°C with Rg ≥ 50 Ω and VDD = 15 V. This value is derived from the test circuit on page 5 of the datasheet, where inductive energy is dissipated across the MOSFET during unclamped inductive switching, validating ruggedness for motor and relay drive applications.
Is RJK0351DPA-02#J0 RoHS-compliant and halogen-free?
Yes, RJK0351DPA-02#J0 is Pb-free and RoHS-compliant, as explicitly stated in the "Features" section of the datasheet. The device uses Ni/Pd/Au plating on terminals and meets JEDEC standards for environmentally conscious manufacturing. No halogen content statement is provided in the referenced document, so compliance with halogen-free standards should be verified via Renesas' material declaration reports.
What is the thermal resistance from channel to case (θch-C) for RJK0351DPA-02#J0?
The channel-to-case thermal resistance (θch-C) of RJK0351DPA-02#J0 is 2.78 °C/W, measured under steady-state conditions with Tc = 25°C. This value reflects heat flow from the silicon die through the package to the PCB copper pad and is critical for calculating junction temperature rise in high-power applications using the RJK0351DPA-02#J0.
RJK0351DPA-02#J0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
RJK0351DPA-02#J0 FAQ
1.How can I place an order for RJK0351DPA-02#J0 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK0351DPA-02#J0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK0351DPA-02#J0 reliable?
The price and inventory of RJK0351DPA-02#J0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0351DPA-02#J0 is usually 5 days.
3.What payment methods are accepted for RJK0351DPA-02#J0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK0351DPA-02#J0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK0351DPA-02#J0?
RJK0351DPA-02#J0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK0351DPA-02#J0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK0351DPA-02#J0?
For technical support, including RJK0351DPA-02#J0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0351DPA-02#J0 requirements.
6.How does Aetrix verify that RJK0351DPA-02#J0 is sourced from the original manufacturer or authorized distributors?
All RJK0351DPA-02#J0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0351DPA-02#J0 meets industry standards.
7.What is the process for return or replacement of RJK0351DPA-02#J0?
All RJK0351DPA-02#J0 units undergo pre-shipment inspection (PSI). If there is an issue with RJK0351DPA-02#J0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK0351DPA-02#J0 part is unused and in its original packaging.
Return procedure for RJK0351DPA-02#J0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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