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Renesas RJK0351DPA-WS#J0
- Part No.:
- RJK0351DPA-WS#J0
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
RJK0351DPA-WS#J0.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:410
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Product details
Overview
RJK0351DPA-WS#J0 from Renesas is a silicon N-channel power MOSFET designed for high-efficiency DC-DC conversion and load switching in industrial power supplies, motor drivers, and e-mobility subsystems. It delivers 3.2 mΩ typical RDS(on) at VGS = 10 V, supports 4.5 V gate drive, and handles 40 A continuous drain current with 30 V VDSS.
For engineers reviewing the RJK0351DPA-WS#J0 datasheet, RJK0351DPA-WS#J0 pinout, RJK0351DPA-WS#J0 application, or RJK0351DPA-WS#J0 equivalent, key selection criteria include low on-resistance at 4.5 V gate drive, fast switching (8.6 ns td(on), 6.4 ns tf), thermal resistance (θch-C = 2.78 °C/W), body diode recovery (trr = 25 ns), and WPAK package mounting density.
Technical Context
This MOSFET employs a trench-gate process optimized for low RDS(on) and reduced gate charge (Qg = 17 nC). Its 30 V VDSS rating targets 24 V bus systems, while the 4.5 V logic-level gate threshold enables direct interfacing with microcontrollers and PWM controllers without level-shifting.
The device integrates a robust body diode with 0.82 V typical forward voltage (VDF) at 40 A and 25 ns reverse recovery time-critical for synchronous rectification and freewheeling in buck converters and H-bridge motor drives.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - supports 24 V nominal input rails with margin for transients |
| RDS(on) typ. | 3.2 mΩ at VGS = 10 V - reduces conduction loss to ≤1.28 W at 20 A |
| RDS(on) max. | 6.0 mΩ at VGS = 4.5 V - ensures reliable turn-on with standard logic-level drivers |
| Qg | 17 nC - lowers gate drive power and enables >1 MHz switching in hard-switched topologies |
| tr/tf | 5.0 ns / 6.4 ns - minimizes switching transition losses in high-frequency SMPS |
| θch-C | 2.78 °C/W - allows 45 W channel dissipation at Tc = 25 °C with minimal heatsinking |
| trr | 25 ns - limits reverse recovery loss and EMI in synchronous rectifier operation |
Pinout & Package
Package: WPAK (RENESAS code PWSN0008DA-A), surface-mount, thermally enhanced leadframe with exposed drain pad. Dimensions: 6.1 × 5.9 mm, height ≤ 0.8 mm. Mass: 0.075 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source connection for internal parallel cells; low-inductance return path |
| 4 | Gate | Control terminal; requires <2.4 Ω gate resistance to limit ringing and overshoot |
| 5, 6, 7, 8 | Drain | High-current output node tied to exposed die-pad; primary thermal path to PCB |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS = 4.5 V, eliminating need for gate driver ICs in 3.3/5 V control systems |
| Low RDS(on) × Qg figure of merit | 3.2 mΩ × 17 nC = 54.4 mΩ·nC - balances conduction and switching loss for high-efficiency 500 kHz–1 MHz converters |
| Thermally optimized WPAK package | 2.78 °C/W channel-to-case resistance enables >40 W power handling with single-layer copper pour |
| Fast body diode | 25 ns trr and 0.82 V VDF reduce freewheeling loss and improve light-load efficiency in synchronous topologies |
| Pb-free construction | RoHS-compliant plating (Ni/Pd/Au) meets industrial and automotive end-equipment requirements |
Applications
| DC-DC Buck Converter | BLDC Motor Phase Switch |
|---|---|
Use Scenario: Primary high-side switch in 24 V input, 5–12 V output synchronous buck converter for PLC I/O modules. IC Role / Device Role / Timing Role: Power switching element controlling energy transfer to output inductor; operates at 500 kHz with 100 ns dead-time management. Use Value: 3.2 mΩ RDS(on) cuts full-load conduction loss by 42% vs. legacy 5.5 mΩ MOSFETs, enabling >95% peak efficiency. | Use Scenario: Low-side phase switch in 3-phase 24 V BLDC driver for HVAC fan actuators. IC Role / Device Role / Timing Role: Ground-referenced switching node commutating motor winding current; driven by 3-phase gate driver with 100 ns propagation delay. Use Value: 25 ns body diode trr prevents shoot-through during PWM transitions and reduces EMI by 8 dBµV in 30–100 MHz band. |
| Hot-Swap Controller FET | Industrial LED Driver Switch |
Use Scenario: Inrush-limiting FET in 24 V backplane hot-swap circuit protecting downstream FPGA and memory modules. IC Role / Device Role / Timing Role: Linear-mode current limiter during startup; transitions to saturation after 5 ms soft-start period. Use Value: 40 A ID rating and 150 °C Tch allow safe operation under 100 A inrush with <100 µs overcurrent response. | Use Scenario: PWM dimming switch in constant-current 24 V LED driver for machine vision lighting. IC Role / Device Role / Timing Role: High-side current path modulator operating at 1–5 kHz; synchronized to camera exposure timing. Use Value: 6.0 mΩ RDS(on) at 4.5 V ensures <0.24 V dropout at 40 A, maintaining tight current regulation across 10:1 dimming range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL3803PBF | RDS(on) = 3.0 mΩ @ 10 V but 7.5 mΩ @ 4.5 V; higher Qg (24 nC); TO-220AB package | Larger footprint and higher thermal resistance (θJA = 40 °C/W) require heatsink for >15 W dissipation | Choose when board space permits through-hole mounting and gate drive exceeds 5 V. |
| SiR872DP-T1-GE3 | RDS(on) = 3.3 mΩ @ 10 V and 5.2 mΩ @ 4.5 V; lower Qg (12.5 nC); PowerPAK SO-8 package | Smaller 5 × 6 mm footprint but no exposed drain pad; θch-C = 3.5 °C/W limits power density | Prefer for compact designs where gate drive is ≥4.5 V and peak power <35 W. |
Compared with IRL3803PBF and SiR872DP-T1-GE3, RJK0351DPA-WS#J0 offers superior thermal performance (2.78 °C/W) and tighter RDS(on) tolerance at 4.5 V (4.3–6.0 mΩ), making it optimal for high-power-density 24 V industrial converters requiring minimal heatsinking.
Availability
RJK0351DPA-WS#J0 is available at Aetrix Electronics and suitable for industrial power supplies, motor control modules, and LED driver systems requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for RJK0351DPA-WS#J0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The RJK0351DPA-WS#J0 belongs to Renesas' WPAK-series logic-level power MOSFETs, engineered for high-current, high-efficiency switching in space-constrained 24 V industrial power systems.
FAQ
What is the maximum continuous drain current rating for RJK0351DPA-WS#J0?
RJK0351DPA-WS#J0 is rated for 40 A continuous drain current (ID) at Tc = 25 °C. This rating assumes proper PCB thermal design with adequate copper area on the drain pad. At elevated case temperatures, derating applies per the Power vs. Temperature Derating curve-e.g., ~28 A at Tc = 100 °C. The 160 A peak pulse rating (ID(pulse)) is valid only for PW ≤ 10 µs and duty cycle ≤ 1%.
Does RJK0351DPA-WS#J0 support 3.3 V logic-level gate drive?
RJK0351DPA-WS#J0 is not guaranteed to fully enhance at 3.3 V gate drive. Its gate threshold voltage (VGS(off)) ranges from 1.2 V to 2.5 V, and RDS(on) is specified at VGS = 4.5 V (max 6.0 mΩ) and 10 V (typ 3.2 mΩ). For reliable saturation and low conduction loss, use ≥4.5 V gate drive; 3.3 V may result in excessive RDS(on) and thermal stress under load.
What is the thermal resistance from channel to case for RJK0351DPA-WS#J0?
The channel-to-case thermal resistance (θch-C) of RJK0351DPA-WS#J0 is 2.78 °C/W, measured under standard test conditions (Tc = 25 °C). This value reflects heat flow from the silicon die directly to the exposed drain pad in the WPAK package. Achieving this performance requires soldering the drain pad to ≥200 mm² of 2 oz copper with ≥4 thermal vias to inner ground planes.
Can RJK0351DPA-WS#J0 be used in avalanche mode?
Yes, RJK0351DPA-WS#J0 is rated for repetitive avalanche operation with IAP = 17 A and EAR = 28.9 mJ at Tch = 25 °C (Rg ≥ 50 Ω). Avalanche capability is validated using the test circuit in the datasheet (Page 5). Operation beyond these limits or at elevated channel temperatures requires derating per the Maximum Avalanche Energy vs. Channel Temperature curve.
What is the gate-to-source leakage current specification for RJK0351DPA-WS#J0?
The gate-to-source leakage current (IGSS) for RJK0351DPA-WS#J0 is ±0.1 µA maximum at VGS = ±20 V and VDS = 0, per the Absolute Maximum Ratings table. This low leakage supports stable gate bias in high-impedance drive circuits and minimizes standby power loss in always-on industrial control nodes using RJK0351DPA-WS#J0.
RJK0351DPA-WS#J0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
RJK0351DPA-WS#J0 FAQ
1.How can I place an order for RJK0351DPA-WS#J0 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK0351DPA-WS#J0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK0351DPA-WS#J0 reliable?
The price and inventory of RJK0351DPA-WS#J0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0351DPA-WS#J0 is usually 5 days.
3.What payment methods are accepted for RJK0351DPA-WS#J0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK0351DPA-WS#J0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK0351DPA-WS#J0?
RJK0351DPA-WS#J0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK0351DPA-WS#J0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK0351DPA-WS#J0?
For technical support, including RJK0351DPA-WS#J0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0351DPA-WS#J0 requirements.
6.How does Aetrix verify that RJK0351DPA-WS#J0 is sourced from the original manufacturer or authorized distributors?
All RJK0351DPA-WS#J0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0351DPA-WS#J0 meets industry standards.
7.What is the process for return or replacement of RJK0351DPA-WS#J0?
All RJK0351DPA-WS#J0 units undergo pre-shipment inspection (PSI). If there is an issue with RJK0351DPA-WS#J0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK0351DPA-WS#J0 part is unused and in its original packaging.
Return procedure for RJK0351DPA-WS#J0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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